Datasheet BYV97F Datasheet (Philips)

Download

Page 1

DISCRETE SEMICONDUCTORS

DATA SH EET

handbook, 2 columns

M3D116

BYV97 series

Fast soft-recovery controlled avalanche rectifiers

Product speciﬁcation Supersedes data of February 1994

1996 Jun 07

Page 2

Philips Semiconductors Product speciﬁcation

Fast soft-recovery

BYV97 series

controlled avalanche rectiﬁers

FEATURES

• Glass passivated

• High maximum operating

temperature

• Low leakage current

• Excellent stability

• Guaranteed avalanche energy

absorption capability

• Available in ammo-pack.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

RRM

repetitive peak reverse voltage

BYV97F − 1200 V BYV97G − 1400 V

continuous reverse voltage

BYV97F − 1200 V BYV97G − 1400 V

F(AV)

FRM

FSM

RSM

average forward current Ttp=60°C; lead length = 10 mm

average forward current T

repetitive peak forward current Ttp=65°C; see Fig.4 − 15 A

non-repetitive peak forward current t = 10 ms half sine wave;

non-repetitive peak reverse avalanche energy

stg

storage temperature −65 +175 °C junction temperature see Fig.7 −65 +175 °C

DESCRIPTION

Rugged glass SOD57 package, using a high temperature alloyed construction. This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched.

2/3 page (Datasheet)

MAM047

Fig.1 Simplified outline (SOD57) and symbol.

− 1.6 A see Fig.2; averaged over any 20 ms period; see also Fig.6

=50°C; PCB mounting

amb

− 0.9 A (see Fig. 12); see Fig.3; averaged over any 20 ms period; see also Fig.6

=65°C; see Fig.5 − 8A

amb

− 20 A Tj=T VR=V

L = 120 mH; Tj=T

prior to surge;

j max

RRMmax

j max

prior to

− 10 mJ surge; inductive load switched off

1996 Jun 07 2

Page 3

Philips Semiconductors Product speciﬁcation

Fast soft-recovery

BYV97 series

controlled avalanche rectiﬁers

ELECTRICAL CHARACTERISTICS

=25°C unless otherwise speciﬁed.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

(BR)R

-------dt

forward voltage IF= 3 A; Tj=T

= 3 A; see Fig.8 −−1.65 V

reverse avalanche

IR= 0.1 mA

; see Fig.8 1.35 V

j max

breakdown voltage

BYV97F 1300 −−V BYV97G 1500 −−V

reverse current VR=V

RRMmax

;

−− 1µA

see Fig.9 V

R=VRRMmax

; Tj= 165 °C;

−−150 µA

see Fig.9

reverse recovery time when switched from IF= 0.5 A

−−500 ns to IR= 1 A; measured at IR= 0.25 A; see Fig.14

diode capacitance f = 1 MHz; VR= 0 V; see Fig.11 − 35 − pF maximum slope of

reverse recovery current

when switched from I VR≥ 30 V and dIF/dt = −1A/µs;

= 1 A to

−− 5A/µs

see Figs 10 and 13

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R R

th j-tp th j-a

thermal resistance from junction to tie-point lead length = 10 mm 46 K/W thermal resistance from junction to ambient note 1 100 K/W

Note

1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig. 12. For more information please refer to the

“General Part of associated Handbook”

1996 Jun 07 3

Page 4

Philips Semiconductors Product speciﬁcation

Fast soft-recovery controlled avalanche rectiﬁers

GRAPHICAL DATA

2.0

handbook, halfpage

F(AV)

(A)

1.6

1.2

0.8

0.4

0 200

a =1.57; VR=V

RRMmax

lead length 10 mm

; δ= 0.5.

100

T ( C)

MBD419

1.2

handbook, halfpage

F(AV)

(A)

0.8

0.4

0 200

a =1.57; VR=V Device mounted as shown in Fig.12.

RRMmax

; δ= 0.5.

BYV97 series

100

T ( C)

amb

MBD420

Fig.2 Maximum permissible average forward

current as a function of tie-point temperature (including losses due to reverse leakage).

FRM (A)

= 0.05

0.1

0.2

0.5

11010

Fig.3 Maximum permissible average forward

current as a function of ambient temperature (including losses due to reverse leakage).

MBD448

2103

t (ms)

Ttp=65°C; R V

during 1 −δ; curves include derating for T

RRMmax

th j-tp

= 46 K/W.

j max

at V

RRM

= 1400 V.

Fig.4 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.

1996 Jun 07 4

Page 5

Philips Semiconductors Product speciﬁcation

Fast soft-recovery controlled avalanche rectiﬁers

FRM (A)

0.1

0.2

0.5

11010

= 0.05

2103

BYV97 series

MBD442

t (ms)

=65°C; R

amb

during 1 −δ; curves include derating for T

RRMmax

th j-a

= 100 K/W.

j max

at V

RRM

= 1400 V.

Fig.5 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.

handbook, halfpage

I (A)

F(AV)

1.57

1.42

RRMmax

a = 3 2.5 2

; δ = 0.5.

(W)

a=I

F(RMS)/IF(AV)

; VR=V

Fig.6 Maximum steady state power dissipation

MBD428

200

handbook, halfpage

( C)

100

0 2000

Solid line = VR. Dotted line = V

RRM

; δ = 0.5.

BYV97F BYV97G

1000

V (V)

(forward plus leakage current losses, excluding switching losses) as a function of average forward current.

Fig.7 Maximum permissible junction temperature

as a function of reverse voltage.

MBD433

1996 Jun 07 5

Page 6

Philips Semiconductors Product speciﬁcation

Fast soft-recovery controlled avalanche rectiﬁers

handbook, halfpage

(A)

012

(V)

MGD316

BYV97 series

Tj ( C)

MGC574

2000

handbook, halfpage

(µA)

100

Dotted line: Tj= 175 °C. Solid line: Tj=25°C.

Fig.8 Forward current as a function of forward

voltage; maximum values.

handbook, full pagewidth

(µs)

VR=V

RRMmax

Fig.9 Reverse current as a function of junction

temperature; maximum values.

MBD439

I =

F 5 A

1 A

Tj=25°C. For definitions see Fig. 13.

Fig.10 Maximum reverse recovery time as a function of the rate of fall of forward current.

1996 Jun 07 6

10110

dl /dt (A/µs)

Page 7

Philips Semiconductors Product speciﬁcation

Fast soft-recovery controlled avalanche rectiﬁers

handbook, halfpage

(pF)

VR (V)

MGD317

BYV97 series

handbook, halfpage

50 25

MGA200

f = 1 MHz; Tj=25°C.

Fig.11 Diode capacitance as a function of reverse

voltage; typical values.

ndbook, halfpage

10%

100%

Dimensions in mm.

Fig.12 Device mounted on a printed-circuit board.

MGC499

Fig.13 Reverse recovery definitions.

1996 Jun 07 7

Page 8

Philips Semiconductors Product speciﬁcation

Fast soft-recovery controlled avalanche rectiﬁers

handbook, full pagewidth

10 Ω

25 V

DUT

1 Ω

50 Ω

(A)

0.25

(A)

0.5

BYV97 series

MAM057

Input impedance oscilloscope: 1 MΩ, 22 pF; tr< 7 ns. Source impedance: 50 Ω; tr<15ns.

Fig.14 Test circuit and reverse recovery time waveform and definition.

1996 Jun 07 8

Page 9

Philips Semiconductors Product speciﬁcation

Fast soft-recovery controlled avalanche rectiﬁers

PACKAGE OUTLINE

handbook, full pagewidth

3.81 max

Dimensions in mm. The marking band indicates the cathode.

BYV97 series

4.57 max

28 min28 min

Fig.15 SOD57.

0.81 max

MBC880

DEFINITIONS

Data Sheet Status

Objective speciﬁcation This data sheet contains target or goal speciﬁcations for product development. Preliminary speciﬁcation This data sheet contains preliminary data; supplementary data may be published later. Product speciﬁcation This data sheet contains ﬁnal product speciﬁcations.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the speciﬁcation.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

1996 Jun 07 9