Philips Semiconductors Product specification
Rectifier diodes BYV79EB series
ultrafast, rugged
FEATURES SYMBOL QUICK REFERENCE DATA
• Low forward volt drop VR = 150 V/ 200 V
• Fast switching
• Soft recovery characteristic VF ≤ 0.9 V
• Reverse surge capability
• High thermal cycling performance I
F(AV)
= 14 A
• Low thermal resistance
I
RRM
= 0.2 A
trr ≤ 30 ns
GENERAL DESCRIPTION PINNING SOT404
Ultra-fast, epitaxial rectifier diodes PIN DESCRIPTION
intended foruse as output rectifiers
in high frequency switched mode 1 no connection
power supplies.
2 cathode
1
The BYV79EB series issupplied in
the surface mounting SOT404 3 anode
package.
tab cathode
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
BYV79EB -150 -200
V
RRM
Peak repetitive reverse voltage - 150 200 V
V
RWM
Crest working reverse voltage - 150 200 V
V
R
Continuous reverse voltage Tmb ≤ 145˚C - 150 200 V
I
F(AV)
Average rectified forward square wave - 14 A
current
2
δ = 0.5; Tmb ≤ 120 ˚C
I
FRM
Repetitive peak forward current t = 25 µs; δ = 0.5; - 28 A
per diode Tmb ≤ 120 ˚C
I
FSM
Non-repetitive peak forward t = 10 ms - 150 A
current t = 8.3 ms - 160 A
sinusoidal; with reapplied
V
RRM(max)
I
RRM
Repetitive peak reverse current tp = 2 µs; δ = 0.001 - 0.2 A
I
RSM
Non-repetitive peak reverse tp = 100 µs - 0.2 A
current
T
stg
Storage temperature -40 150 ˚C
T
j
Operating junction temperature - 150 ˚C
1. It is not possible to make connection to pin 2 of the SOT404 package
2. Neglecting switching and reverse current losses.
ESD LIMITING VALUE
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
C
Electrostatic discharge Human body model; - 8 kV
capacitor voltage C = 250 pF; R = 1.5 kΩ
k a
tab 3
13
tab
2
July 1998 1 Rev 1.100