Datasheet BYV79E-200, BYV79E-150 Datasheet (Philips)

Philips Semiconductors Product specification

Rectifier diodes BYV79E series
ultrafast, rugged

FEATURES SYMBOL QUICK REFERENCE DATA

• Low forward volt drop VR = 150 V/ 200 V

• Fast switching

• Soft recovery characteristic VF ≤ 0.9 V

• Reverse surge capability

• High thermal cycling performance I

• Low thermal resistance

GENERAL DESCRIPTION PINNING SOD59 (TO220AC)

k a
12

= 14 A

F(AV)

I

≤ 0.2 A

RRM

trr ≤ 30 ns

Ultra-fast, epitaxial rectifier diodes PIN DESCRIPTION
intended foruse as output rectifiers

tab

in high frequency switched mode 1 cathode
power supplies.

2 anode
The BYV79E series is supplied in
the conventional leaded SOD59 tab cathode
(TO220AC) package.

1

2

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V
V
V

I

F(AV)

I

FRM

RRM
RWM
R

Peak repetitive reverse voltage - 150 200 V
Crest working reverse voltage - 150 200 V
Continuous reverse voltage Tmb ≤ 145˚C - 150 200 V

Average forward current

1

square wave - 14 A
δ = 0.5; Tmb ≤ 120 ˚C

Repetitive peak forward current t = 25 µs; δ = 0.5; - 28 A

Tmb ≤ 120 ˚C

I

FSM

Non-repetitive peak forward t = 10 ms - 150 A
current t = 8.3 ms - 160 A

sinusoidal; with reapplied
V

I

RRM

I

RSM

T
T

stg
j

Repetitive peak reverse current tp = 2 µs; δ = 0.001 - 0.2 A
Non-repetitive peak reverse tp = 100 µs - 0.2 A
current
Storage temperature -40 150 ˚C
Operating junction temperature - 150 ˚C

RWM(max)

1. Neglecting switching and reverse current losses.

BYV79E -150 -200

ESD LIMITING VALUE

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

C

July 1998 1 Rev 1.200

Electrostatic discharge Human body model; - 8 kV
capacitor voltage C = 250 pF; R = 1.5 kΩ

Philips Semiconductors Product specification

Rectifier diodes BYV79E series
ultrafast, rugged

THERMAL RESISTANCES

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

R

th j-mb

R

th j-a

STATIC CHARACTERISTICS

Tj = 25 ˚C unless otherwise stated

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

F

I

R

Q

s

t

rr1

t

rr2

V

fr

Thermal resistance junction to - - 2 K/W
mounting base
Thermal resistance junction to in free air - 60 - K/W
ambient

Forward voltage IF = 14 A; Tj = 150˚C - 0.83 0.90 V

IF = 14 A - 0.95 1.05 V
IF = 50 A - 1.2 1.4 V

Reverse current VR = V

VR = V

; Tj = 100 ˚C - 0.5 1.3 mA

RWM
RWM

-550µA
Reverse recovery charge IF = 2 A; VR ≥ 30 V; -dIF/dt = 20 A/µs- 6 15 nC
Reverse recovery time IF = 1 A; VR ≥ 30 V; - 20 30 ns

-dIF/dt = 100 A/µs
Reverse recovery time IF = 0.5 A to IR = 1 A; I
Forward recovery voltage IF = 1 A; dIF/dt = 10 A/µs-1-V

= 0.25 A - 13 22 ns

rec

July 1998 2 Rev 1.200

Philips Semiconductors Product specification

Rectifier diodes BYV79E series
ultrafast, rugged

I

F

dI

F

dt

t

rr

time

Q

s

I

R

I

F

I

rrm

Fig.1. Definition of t

, Qs and I

rr1

10%

100%

rrm

time

V

F

V

fr

V

F

time

Fig.2. Definition of V

fr

0.5A

IF

0A

I = 0.25A

rec

IR

trr2

I = 1A

R

Fig.4. Definition of t

PF / W

20

Vo = 0.744 V
Rs = 0.0112 Ohms

15

10

5

0

0 5 10 15 20 25

0.1

BYV79

0.5

0.2

IF(AV) / A

rr2

Tmb(max) / C

D = 1.0

p

p

t

I

t

D =

T

T

t

Fig.5. Maximum forward dissipation PF = f(I

square current waveform where I

F(AV)

=I

F(RMS)

110

120

130

140

150

);

F(AV)

x √D.

1.9

F(AV)

Tmb(max) / C

a = 1.57

.

120

130

140

150

F(AV)

);

R

Voltage Pulse Source

Current
shunt

Fig.3. Circuit schematic for t

D.U.T.

to ’scope

rr2

PF / W

15

Vo = 0.744 V
Rs = 0.0112 Ohms

10

5

0

0 5 10 15

BYV79

2.2

2.8

4

IF(AV) / A

Fig.6. Maximum forward dissipation PF = f(I

sinusoidal current waveform where a = form

factor = I

F(RMS)

/ I

July 1998 3 Rev 1.200

Philips Semiconductors Product specification

Rectifier diodes BYV79E series
ultrafast, rugged

trr / ns

1000

IF=10A

100

IF=1A

10

1

1 10 100

dIF/dt (A/us)

Fig.7. Maximum trr at Tj = 25 ˚C.

Irrm / A

10

IF=10A

1

IF=2A

0.1

Qs / nC

1000

100

10

1.0

1.0 10 100

IF=10A

5A
2A

-dIF/dt (A/us)

Fig.10. Maximum Qs at Tj = 25 ˚C.

Transient thermal impedance, Zth j-mb (K/W)

10

1

0.1

p

t

0.01

P

D

D =

p

t
T

0.01
1

Fig.8. Maximum I

IF / A

60

Tj = 150 C

50

Tj = 25 C

40

30

20

10

0

0 2

typ

0.5

10 100

-dIF/dt (A/us)

at Tj = 25 ˚C.

rrm

max

1.0

VF / V

1.5

Fig.9. Typical and maximum forward characteristic

IF = f(VF); parameter T

j

0.001
1us 10us 100us 1ms 10ms 100ms 1s 10s

pulse width, tp (s)

T

BYV79E

Fig.11. Transient thermal impedance; Z

t

th j-mb

= f(tp).

July 1998 4 Rev 1.200

Philips Semiconductors Product specification

Rectifier diodes BYV79E series
ultrafast, rugged

MECHANICAL DATA

Dimensions in mm
Net Mass: 2 g

3,0 max

not tinned

1,3

max

(2x)

10,3
max

3,7

12

5,08

2,8

3,0

13,5

min

0,9 max (2x)

4,5
max

1,3

5,9

min

15,8

max

0,6

2,4

Fig.12. SOD59 (TO220AC). pin 1 connected to mounting base.

Notes

1. Refer to mounting instructions for TO220 envelopes.

2. Epoxy meets UL94 V0 at 1/8".

July 1998 5 Rev 1.200

Philips Semiconductors Product specification

Rectifier diodes BYV79E series
ultrafast, rugged

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

 Philips Electronics N.V. 1998

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.

The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.

July 1998 6 Rev 1.200