Datasheet BYV54V-200, BYV541V-200 Datasheet (SGS Thomson Microelectronics)

BYV54V



BYV541V

HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES

FEATURES

n SUITED FOR SMPS
n VERY LOWFORWARD LOSSES
n NEGLIGIBLE SWITCHING LOSSES
n HIGH SURGE CURRENT CAPABILITY
n HIGH AVALANCHE ENERGY CAPABILITY
n INSULATED :

Insulating voltage = 2500 V

RMS

Capacitance = 45 pF

DESCRIPTION

Dual rectifier suited for switchmode power supply
and high frequency DC to DC converters.
Packaged in ISOTOPTMthis device is intended for
use in low voltage, high frequency inverters, free
wheeling and polarity protection applications.

K2 A2

A1K1

BYV541V-200

ISOTOP

(Plastic)

A2 K1

BYV54V-200

A1K2

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

I

F(RMS)

I

F(AV)

I

FSM

RMS forward current
Average forward current δ = 0.5
Surge non repetitive forward current

Per diode
Tc=90°C Per diode
tp=10ms

Per diode

100 A

50 A

1000 A

sinusoidal

Tstg

Tj

Storage and junction temperature range

-40to+
150

- 40 to+ 150

Symbol Parameter BYV54V / BYV541V Unit

V

RRM

Repetitive peak reverse voltage

200 V

ISOTOP is a trademark of STMicroelectronics.

May 2000 - Ed : 2E

°C
°C

1/5

BYV54V / BYV541V

THERMAL RESISTANCE

Symbol Parameter Value Unit

Rth (j-c)

Rth (c)

Junction to case

Coupling

Per diode
Total

1.2 °C/W

0.85

0.1 °C/W

When the diodes 1 and 2 are used simultaneously :
Tj-Tc (diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)

ELECTRICAL CHARACTERISTICS (Per diode)
STATIC CHARACTERISTICS

Symbol Test Conditions Min. Typ. Max. Unit

IR*

V

F**

Tj=25°CV

=V

R

RRM

Tj= 100°C

Tj= 125°CI

Tj= 125°CI

=50A

F

= 100 A

F

50 µA

5mA

0.85 V

1.00

Tj=25°CI

Pulse test :
* tp = 5 ms, duty cycle < 2%

** tp = 380 µs, duty cycle< 2 %

= 100 A

F

1.15

RECOVERY CHARACTERISTICS

Symbol Test Conditions Min. Typ. Max. Unit

trr Tj=25°CI

= 0.5A

F

Irr = 0.25A 40 ns

IR=1A

IF=1A

dIF/dt = -50A/µs60

VR= 30V

tfr Tj=25°CI

V

FP

Tj=25°CI

=1A

F

VFR= 1.1 x V

= 1A tr = 5ns 1.5 V

F

tr = 5ns 10 ns

F

2/5

BYV54V / BYV541V

Fig.1 : Average forward power dissipation versus

average forward current.

P

F(av)(W)

45
40
35

=0.05

=0.1

=0.2

=0.5

=1

30
25
20

T

15
10

5
0

0 5 10 15 20 25 30 35 40 45 50

I

F(av)(A)

=tp/T

tp

Fig.3 : Forward voltage drop versus forward

current (maximum values).

VFM(V)

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

o

Tj=125 C

IFM(A)

110100500

Fig.2 : Peak current versus form factor.

I

M(A)

1000

=tp/T

T

I

M

tp

800

P=30W

600

400

200

0

P=15W

P=45W

P=60W

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

Fig.4 : Relative variation of thermal impedance

junction to case versus pulse duration.

K

1.0

Zth(j-c) (tp. )

K=

Rth(j-c)

0.5

0.2

0.1

=0.5

=0.2

=0.1

Single pulse

tp(s)

1.0E-03 1.0E-02 1.0E-01

=tp/T

T

tp

1.0E+00

Fig.5 : Non repetitive surge peak forward current

versus overload duration.

I

M(A)

400

300

o

200

100

IM

t

0

0.001 0.01 0.1 1

=0.5

t(s)

Tc=25 C

o

Tc=50 C

o

Tc=90 C

Fig.6 : Average current versus ambient

temperature. (duty cycle :0.5)

I

F(av)(A)

60

50

40

30

=0.5

20

T

10

=tp/T

0

0 20 40 60 80 100 120 140 160

tp

Rth(j-a)=Rth(j-c)

o

Tamb( C)

3/5

BYV54V / BYV541V

Fig.7 : Junction capacitance versus reverse

voltage applied (Typical values).

C(pF)

420
400
380
360
340
320
300
280
260
240

1 10 100

F=1Mhz Tj=25 C

VR(V)

o

200

Fig.9 : Peak reverse current versus dIF/dt.

IRM(A)

4.0

90%CONFIDEN CE

3.6

IF=IF(av)

3.2

2.8

2.4

2.0

1.6

1.2

0.8

0.4

0.0
20

1 10 100

dIF/dt(A/us)

O

Tj=100 C

Tj=25 C

O

Fig.8 : Recovery charges versus dIF/dt.

QRR(nC)

120

90%CONFIDENCE

110

90

IF=IF(av)

O

Tj=100 C

100

80
70
60

O

50

Tj=25 C

40
30
20
10

0

110100

dIF/dt(A/us)

Fig.10 : Dynamic parameters versus junction

temperature.

QRR;IRM[Tj]/QRR;IRM[Tj=125 C]

1.50

1.25

1.00

IRM

0.75

0.50

0.25

0.00
0 25 50 75 100 125 150

o

Tj( C)

o

QRR

4/5

PACKAGE MECHANICAL DATA

ISOTOP

BYV54V / BYV541V

DIMENSIONS

REF.

A 11.80 12.20 0.465 0.480

A1 8.90 9.10 0.350 0.358

B 7.8 8.20 0.307 0.323
C 0.75 0.85 0.030 0.033

C2 1.95 2.05 0.077 0.081

D 37.80 38.20 1.488 1.504

D1 31.50 31.70 1.240 1.248

E 25.15 25.50 0.990 1.004
E1 23.85 24.15 0.939 0.951
E2 24.80 typ. 0.976 typ.

G 14.90 15.10 0.587 0.594
G1 12.60 12.80 0.496 0.504
G2 3.50 4.30 0.138 0.169

F 4.10 4.30 0.161 0.169

F1 4.60 5.00 0.181 0.197

P 4.00 4.30 0.157 0.69

P1 4.00 4.40 0.157 0.173

S 30.10 30.30 1.185 1.193

Millimeters Inches

Min. Max. Min. Max.

n Marking : Type number
n Cooling method : C
n Weight : 27 g
n Epoxy meets UL94, V0

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