Datasheet BYV52PI-200, BYV52-200 Datasheet (SGS Thomson Microelectronics)



BYV52/PI

HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES

FEATURES

SUITEDFOR SMPS
VERYLOWFORWARD LOSSES
NEGLIGIBLESWITCHINGLOSSES
HIGHSURGE CURRENT CAPABILITY

A1

K

A2

HIGHAVALANCHEENERGYCAPABILITY
INSULATEDVERSIONTOP3I:

Insulatingvoltage= 2500 VDC
Capacitance= 12 pF

DESCRIPTION

Dual center tap rectifier suited for switchmode
power supply and high frequency DC to DC
converters.
Packaged in SOT93, or TOP3I this device is
intended for use in low voltage, high frequency
inverters, free wheeling and polarity protection
applications.

SOT93

(Plastic)

BYV52-200

isolated

TOP3I

(Plastic)

BYV52PI-200

ABSOLUTE MAXIMUMRATINGS

Symbol Parameter Value Unit

I

F(RMS)

I

F(AV) Averageforwardcurrent

RMSforward current

δ = 0.5

I

FSM

Tstg

Surgenon repetitiveforwardcurrent

Storageand junctiontemperaturerange

Tj

Per diode

SOT93 Tc=110°C Per diode
TOP3I Tc=90°C Per diode

tp=10ms
sinusoidal

Per diode

50 A
30 A

30

500 A

- 40 to + 150

- 40 to + 150

Symbol Parameter Value Unit

V

RRM

October 1999 Ed : 2C

Repetitivepeak reversevoltage

200 V

°C
°

C

1/6

BYV52/PI

THERMALRESISTANCE

Symbol Parameter Value Unit

Rth (j-c)

Rth (c)

Junctionto case

Coupling

SOT93 Perdiode

Total

TOP3I Perdiode

Total

SOT93

TOP3I

1.2

0.75

1.8

1.2

0.3 °C/W

0.6

Whenthe diodes1 and 2 are used simultaneously:
Tj-Tc(diode 1) = P(diode1) x Rth(j-c)(Perdiode) + P(diode 2) x Rth(c)

ELECTRICAL CHARACTERISTICS(Per diode)
STATICCHARACTERISTICS

Symbol TestConditions Min. Typ. Max. Unit

*

I

R

V

F**

T

=25°CV

j

= 100°C

T

j

Tj= 125°CI

=V

R

RRM

=20A

F

25

2.5 mA

0.85 V

°

C/W

µ

A

T

= 125°CI

j

T

=25°CI

j

Pulse test : * tp = 5 ms, duty cycle < 2%

** tp = 380µs, duty cycle < 2 %

=40A

F

=40A

F

1.00

1.15

To evaluatethe conductionlossesuse thefollowing equation:
P = 0.7x I

F(AV)

+ 0.0075x I

F2(RMS)

RECOVERYCHARACTERISTICS

Symbol TestConditions Min. Typ. Max. Unit

trr T

tfr T

V

FP

=25°CI

j

=25°CI

j

Tj=25°CI

= 0.5A

F

I

=1A

R

=1A

I

F

= 30V

V

R

=1A

F

=1.1 x V

V

FR

= 1A tr = 5 ns 1.5 V

F

Irr = 0.25A 35 ns

dI

/dt = -50A/µs50

F

tr = 5 ns 10 ns

F

2/6

BYV52/PI

Fig.1 : Average forward power dissipation versus

averageforward current.

P

F(av)(W)

40
35
30

=0.05

=0.1

=0.2

=0.5

=1

25
20
15

T

10

5
0

0 5 10 15 20 25 30 35

I

F(av)(A)

=tp/T

tp

Fig.3 : Forward voltage drop versus forward

current(maximumvalues).

VFM(V)

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

0.1 1 10 100 300

Tj=125 C

o

IFM(A)

Fig.2: Peakcurrent versusform factor.

I

M(A)

500

=tp/T

T

I

M

tp

450
400
350
300

P=20W

250
200

P=10W

150
100

P=30W

50

0

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1

Fig.4 : Relative variation of thermal impedance

junctionto case versuspulse duration.

K

1.0

Zth(j-c) (tp. )

K=

Rth(j-c)

0.5

0.2

0.1

=0.5

=0.2

=0.1

T

Single pulse

tp(s)

1.0E-03 1.0E-02 1.0E-01 1.0E+00

=tp/T

tp

Fig.5 :

Non repetitive surge peak forward current
versusoverloadduration.
(SOD93)

I

M(A)

300
250
200
150
100

IM

50

0

0.001 0.01 0.1 1

t
=0.5

t(s)

Tc=25 C

Tc=50 C

Tc=110 C

Fig.6 :

Non repetitive surge peak forward current
versusoverloadduration.
(TOP3I)

I

M(A)

250

200

150

o

100

o

o

IM

50

0

0.001 0.01 0.1 1

t
=0.5

t(s)

o

Tc=25 C

o

Tc=50 C

o

Tc=90 C

3/6

BYV52/PI

Fig.7 :

Average current versus ambient
temperature.
(dutycycle : 0.5) (SOD93)

I

F(av)(A)

35
30
25

=0.5

T

Rth(j-a)=Rth(j-c)

20
15

=tp/T

10

tp

Rth(j-a)=15 C/W

o

5

o

0

0 20 40 60 80 100 120 140 160

Tamb( C)

Fig.9 : Junction capacitance versus reverse

voltageapplied(Typical values).

C(pF)

200
190

F=1Mhz Tj=25 C

180
170
160
150
140
130
120
110
100

110100

VR(V)

o

200

Fig.8 :

Average current versus ambient
temperature.
(dutycycle : 0.5) (TOP3I)

I

F(av)(A)

35
30
25

=0.5

T

Rth(j-a)=Rth(j-c)

20
15

=tp/T

10

tp

Rth(j-a)=15 C/W

o

5

o

0

0 20 40 60 80 100 120 140 160

Tamb( C)

Fig.10: Recoverychargesversus dIF/dt.

QRR(nC)

100

90%CONFIDENCE

90

IF=IF(av)

80
70
60
50
40
30
20
10

0

1 10 100

dIF/dt(A/us)

O

Tj=100 C

Tj=25 C

O

Fig.11:

3.0

2.5

Peakreversecurrent versus dIF/dt.

IRM(A)

90%CONFIDENCE

IF=IF(av)

Tj=100 C

O

2.0

1.5

1.0

O

0.5

Tj=25 C

dIF/dt(A/us)

0.0

4/6

20

1 10 100

Fig.12 :

Dynamic parameters versus junction

temperature.

QRR;IRM[Tj]/QRR;IRM[Tj=125 C]

1.50

1.25

1.00

IRM

0.75

0.50

0.25

0.00

0 255075100125150

o

Tj( C)

o

QRR

PACKAGEMECHANICAL DATA

SOD93

BYV52/PI

DIMENSIONS

REF.

A 4.70 4.90 0.185 0.193
C 1.17 1.37 0.046 0.054
D 2.50 0.098

D1 1.27 0.050

E 0.50 0.78 0.020 0.031
F 1.10 1.30 0.043 0.051

F3 1.75 0.069

G 10.80 11.10 0.425 0.437

H 14.70 15.20 0.578 0.598

L 12.20 0.480
L2 16.20 0.638
L3 18.0 0.709
L5 3.95 4.15 0.156 0.163
L6 31.00 1.220

O 4.00 4.10 0.157 0.161

Millimeters Inches

Min. Typ. Max. Min. Typ. Max.

Marking: Type number

Coolingmethod : C
Weight: 3.79g
Recommendedtorque value: 0.8m.N
Maximumtorquevalue : 1.0m.N

5/6

BYV52/PI

PACKAGEMECHANICAL DATA

TOP3I (isolated)

DIMENSIONS

REF.

Millimeters Inches

Min. Max. Min. Max.

A 4.4 4.6 0.173 0.181
B 1.45 1.55 0.057 0.061
C 14.35 15.60 0.565 0.614
D 0.5 0.7 0.020 0.028
E 2.7 2.9 0.106 0.114

F 15.8 16.5 0.622 0.650
G 20.4 21.1 0.815 0.831
H 15.1 15.5 0.594 0.610

J 5.4 5.65 0.213 0.222
K 3.4 3.65 0.134 0.144

L 4.08 4.17 0.161 0.164
P 1.20 1.40 0.047 0.055
R 4.60 typ. 0.181typ.

Marking

: Typenumber
Coolingmethod : C
Weight: 4.46g
Recommendedtorque value: 0.8m.N
Maximumtorquevalue : 1.0m.N

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