Datasheet BYV42E-100 Datasheet (Philips)

Philips Semiconductors Product specification

Rectifier diodes BYV42E series
ultrafast, rugged

GENERAL DESCRIPTION QUICK REFERENCE DATA

Glass passivated high efficiency SYMBOL PARAMETER MAX. MAX. MAX. UNIT
rugged dual rectifier diodes in a
plastic envelope, featuring low BYV42E- 100 150 200
forward voltage drop, ultra-fast V

RRM

recovery times and soft recovery voltage
characteristic. These devices can V
withstand reverse voltage transients I

F

O(AV)

and have guaranteed reverse surge diodes conducting)
and ESD capability. They are t
intended for use in switched mode I

rr
RRM

power supplies and high frequency current per diode
circuits in general where low
conduction and switching losses are
essential.

PINNING - TO220AB PIN CONFIGURATION SYMBOL

Repetitive peak reverse 100 150 200 V
Forward voltage 0.85 0.85 0.85 V

Output current (both 30 30 30 A
Reverse recovery time 28 28 28 ns

Repetitive peak reverse 0.2 0.2 0.2 A

PIN DESCRIPTION

1 anode 1 (a)

tab

a1

a2

2 cathode (k)
3 anode 2 (a)

tab cathode (k)

1 2 3

k

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

-100 -150 -200

V

RRM

V

RWM

V

R

I

O(AV)

I

O(RMS)

I

FRM

I

FSM

I2t I2t for fusing t = 10 ms - 112 A2s
I

RRM

I

RSM

T

stg

T

j

1 Tmb ≤ 144˚C for thermal stability.
2 Neglecting switching and reverse current losses.
For output currents in excess of 20 A, connection should be made to the exposed metal mounting base.

Repetitive peak reverse voltage - 100 150 200 V
Crest working reverse voltage - 100 150 200 V
Continuous reverse voltage

Output current (both diodes square wave - 30 A
conducting)

2

1

δ = 0.5; Tmb ≤ 108 ˚C

- 100 150 200 V

sinusoidal - 27 A

a = 1.57; Tmb ≤ 111 ˚C
RMS forward current - 43 A
Repetitive peak forward current t = 25 µs; δ = 0.5; - 30 A
per diode Tmb ≤ 108 ˚C
Non-repetitive peak forward t = 10 ms - 150 A
current per diode t = 8.3 ms - 160 A

sinusoidal; with reapplied

V

RWM(max)

Repetitive peak reverse current tp = 2 µs; δ = 0.001 - 0.2 A
per diode
Non-repetitive peak reverse tp = 100 µs - 0.2 A
current per diode
Storage temperature -40 150 ˚C
Operating junction temperature - 150 ˚C

October 1994 1 Rev 1.100

Philips Semiconductors Product specification

Rectifier diodes BYV42E series
ultrafast, rugged

ESD LIMITING VALUE

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

C

Electrostatic discharge Human body model; - 8 kV
capacitor voltage C = 250 pF; R = 1.5 kΩ

THERMAL RESISTANCES

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

R

th j-mb

Thermal resistance junction to per diode - - 2.4 K/W
mounting base both diodes conducting - - 1.4 K/W

R

th j-a

Thermal resistance junction to in free air - 60 - K/W
ambient

STATIC CHARACTERISTICS

Tj = 25 ˚C unless otherwise stated

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

F

Forward voltage (per diode) IF = 15 A; Tj = 150˚C - 0.78 0.85 V

IF = 15 A - 0.95 1.05 V

IF = 30 A - 1.00 1.20 V

I

R

Reverse current (per diode) VR = V

VR = V

; Tj = 100 ˚C - 0.5 1 mA

RWM
RWM

- 10 100 µA

DYNAMIC CHARACTERISTICS

Tj = 25 ˚C unless otherwise stated

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Q

s

t

rr1

t

rr2

V

fr

Reverse recovery charge (per IF = 2 A; VR ≥ 30 V; -dIF/dt = 20 A/µs - 6 15 nC
diode)
Reverse recovery time (per IF = 1 A; VR ≥ 30 V; - 20 28 ns
diode) -dIF/dt = 100 A/µs
Reverse recovery time (per IF = 0.5 A to IR = 1 A; I
diode)

= 0.25 A - 13 22 ns

rec

Forward recovery voltage (per IF = 1 A; dIF/dt = 10 A/µs - 1 - V
diode)

October 1994 2 Rev 1.100

Philips Semiconductors Product specification

Rectifier diodes BYV42E series
ultrafast, rugged

I

F

dI

F

dt

t

rr

time

Q

s

I

R

I

F

I

rrm

Fig.1. Definition of t

, Qs and I

rr1

10%

100%

rrm

time

V

F

V

fr

V

F

time

Fig.2. Definition of V

fr

0.5A

IF

0A

I = 0.25A

rec

IR

trr2

I = 1A

R

Fig.4. Definition of t

PF / W

20

Vo = 0.705 V
Rs = 0.0097 Ohms

15

10

5

0

0 5 10 15 20 25

0.1

BYV42

0.2

IF(AV) / A

rr2

Tmb(max) / C

D = 1.0

0.5

p

t

I

D =

T

Fig.5. Maximum forward dissipation PF = f(I

diode; square current waveform where

I

F(AV)

=I

F(RMS)

x √D.

t
T

p

t

F(AV)

102

114

126

138

150

) per

R

Voltage Pulse Source

Current

shunt

Fig.3. Circuit schematic for t

D.U.T.

to ’scope

rr2

PF / W

15

Vo = 0.705 V
Rs = 0.0097 Ohms

10

5

0

0 5 10 15

BYV42

2.2

2.8

4

IF(AV) / A

Fig.6. Maximum forward dissipation PF = f(I

Tmb(max) / C

a = 1.57

1.9

F(AV)

114

126

138

150

) per

diode; sinusoidal current waveform where a = form

factor = I

F(RMS)

/ I

F(AV)

.

October 1994 3 Rev 1.100

Philips Semiconductors Product specification

Rectifier diodes BYV42E series
ultrafast, rugged

trr / ns

1000

IF=20A

100

IF=1A

10

1

1 10 100

dIF/dt (A/us)

Fig.7. Maximum trr at Tj = 25 ˚C; per diode

Irrm / A

10

IF=20A

1

IF=1A

Qs / nC

100

IF=20A

10A

5A
2A
1A

10

1.0

1.0 10 100

-dIF/dt (A/us)

Fig.10. Maximum Qs at Tj = 25 ˚C; per diode

Zth (K/W)

10

1

0.1

0.01
1

Fig.8. Maximum I

IF / A

50

Tj = 150 C

40

Tj = 25 C

30

20

10

0

0

10 100

-dIF/dt (A/us)

at Tj = 25 ˚C; per diode

rrm

typ

max

0.5 1.51.0
VF / V

Fig.9. Typical and maximum forward characteristic

IF = f(VF); parameter T

j

0.1

0.01
tp / s

P

t

p

D

t

10 s0.11 ms10 us

Fig.11. Transient thermal impedance; per diode;

Z

= f(tp).

th j-mb

October 1994 4 Rev 1.100

Philips Semiconductors Product specification

Rectifier diodes BYV42E series
ultrafast, rugged

MECHANICAL DATA

Dimensions in mm
Net Mass: 2 g

3,0 max

not tinned

1,3

max

10,3
max

3,7

1 2 3

2,8

3,0

4,5
max

1,3

5,9

min

15,8

max

13,5

min

(2x)

2,54 2,54

Fig.12. TO220AB; pin 2 connected to mounting base.

Notes

1. Accessories supplied on request: refer to mounting instructions for TO220 envelopes.

2. Epoxy meets UL94 V0 at 1/8".

0,9 max (3x)

0,6

2,4

October 1994 5 Rev 1.100

Philips Semiconductors Product specification

Rectifier diodes BYV42E series
ultrafast, rugged

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

 Philips Electronics N.V. 1994

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
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The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.

October 1994 6 Rev 1.100