Datasheet BYV410-600.127 Specification

Page 1

IMPORTANT NOTICE

10 December 2015

1. Global joint venture starts operations as WeEn Semiconductors

Dear customer,

As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset Management Co. Ltd established Bipolar Power joint venture (JV), WeEn Semiconductors, which will be used in future Bipolar Power documents together with new contact details.

In this document where the previous NXP references remain, please use the new links as shown below.

WWW - For www.nxp.com use www.ween-semi.com Email - For salesaddresses@nxp.com use salesaddresses@ween-semi.com

For the copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) “© NXP Semiconductors N.V. {year}. All rights reserved” becomes “© WeEn Semiconductors Co., Ltd. {year}. All rights reserved”

If you have any questions related to this document, please contact our nearest sales office via email or phone (details via salesaddresses@ween-semi.com).

Thank you for your cooperation and understanding,

WeEn Semiconductors

Page 2

TO-220AB

BYV410-600

Dual enhanced ultrafast power diode

Rev. 2 — 5 August 2011 Product data sheet

1. Product profile

1.1 General description

Dual enhanced ultrafast power diode in a SOT78 (TO-220AB) plastic package.

1.2 Features and benefits

 High thermal cycling performance  Low on state losses

 Low thermal resistance  Soft recovery characteristic minimizes

power consuming oscillations

1.3 Applications

 Dual mode (DCM and CCM) PFC  Power Factor Correction (PFC) for

Interleaved Topology

1.4 Quick reference data

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

RRM

O(AV)

Static characteristics

Dynamic characteristics

repetitive peak reverse voltage

average output current square-wave pulse; δ =0.5;

forward voltage IF=10A; Tj=150°C - 1.3 1.9 V

reverse recovery time IF=1A; VR=30V;

recovered charge IF=1A; VR=30V;

Tmb≤ 92 °C; both diodes conducting; see Figure 1

=10A; Tj=25°C;

see Figure 4

/dt = 100 A/µs; Tj=25°C;

see Figure 5

dIF/dt = 100 A/µs

; see Figure 2

- - 600 V

--20A

-1.42.1V

- 2035ns

- 1528nC

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NXP Semiconductors

12mb3

sym125

A2A1

2. Pinning information

BYV410-600

Dual enhanced ultrafast power diode

Table 2. Pinning information

Pin Symbol Description Simplified outline Graphic symbol

1 A1 anode 1 2 K cathode 3 A2 anode 2 mb K moun ti n g ba se ; ca th od e

SOT78 (TO-220AB)

3. Ordering information

Table 3. Ordering information

Type number Package

BYV410-600 TO-220AB plastic single-ended package; heatsink mounted; 1 mounting

Name Description Version

hole; 3-lead TO-220AB

SOT78

Product data sheet Rev. 2 — 5 August 2011 2 of 11

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NXP Semiconductors

003aad263

0510

F(AV)

(

tot

(W)

a = 180

120

4. Limiting values

BYV410-600

Dual enhanced ultrafast power diode

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

RRM

RWM

O(AV)

FRM

FSM

stg

P (W)

tot

repetitive peak reverse voltage - 600 V crest working reverse voltage - 600 V reverse voltage DC - 600 V average output current square-wave pulse; δ = 0.5 ;

-20A Tmb≤ 92 °C; both diodes conducting; see Figure 1

repetitive peak forward current δ =0.5; tp= 25 µs; Tmb≤ 108 °C;

; see Figure 2

-20A per diode

non-repetitive peak forward current

tp= 8.3 ms; sine-wave pulse; T

= 25 °C; per diode

j(init)

= 10 ms; sine-wave pulse;

= 25 °C; per diode

j(init)

- 132 A

- 120 A

storage temperature -40 150 °C junction temperature - 150 °C

003aad262

δ = 1

0.5

0.2

0.1

0 5 10 15

Fig 1. Forward power dissipation as a function of

average forward current; square waveform; maximum values

Product data sheet Rev. 2 — 5 August 2011 3 of 11

(A)

F(AV)

Fig 2. Forward power dissipation as a function of

average forward current; sinusoidal waveform; maximum values

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NXP Semiconductors

001aag912

−1

−2

th(j-mb)

(K/W)

−3

tp (s)

−6

11010

−1

−2

−5

−3

−4

δ =

5. Thermal characteristics

BYV410-600

Dual enhanced ultrafast power diode

Table 5. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

th(j-mb)

thermal resistance from junction to mounting base

with heatsink compound; per diode; see Figure 3

with heatsink compound;

--2.4K/W

--1.6K/W

both diodes conducting

th(j-a)

thermal resistance from junction

-60-K/W

to ambient

Fig 3. Transient thermal impedance from junction to mounting base per diode as a function of pulse width

Product data sheet Rev. 2 — 5 August 2011 4 of 11

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NXP Semiconductors

003aad261

0123

(V)

(A)

(1) (2) (3)

003aac562

time

100 %

25 %

6. Characteristics

BYV410-600

Dual enhanced ultrafast power diode

Table 6. Characteristics

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

forward voltage IF=10A; Tj= 150 °C - 1.3 1.9 V

=10A; Tj= 25 °C; see Figure 4 -1.42.1V

reverse current VR= 600 V - 13 50 µA

=600V; Tj= 100 °C - 1 1.5 mA

Dynamic characteristi cs

recovered charge IF=1A; VR=30V; dIF/dt = 100 A/µs - 15 28 nC reverse recovery time IF=1A; VR=30V; dIF/dt = 100 A/µs;

- 2035ns

Tj=25°C; see Figure 5

peak reverse recovery current

forward recovery

IF=1A; VR=30V; dIF/dt = 100 A/µs;

-1.41.9A

see Figure 5 IF=1A; dIF/dt = 100 A/µs; see Figure 6 -3.2-V

voltage

Fig 4. Forward current as a function of forward

voltage

Product data sheet Rev. 2 — 5 August 2011 5 of 11

Fig 5. Reverse recovery definitions; ramp recovery

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NXP Semiconductors

001aab912

time

FRM

Fig 6. Forward recovery definitions

BYV410-600

Dual enhanced ultrafast power diode

Product data sheet Rev. 2 — 5 August 2011 6 of 11

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NXP Semiconductors

REFERENCES

OUTLINE

VERSION

EUROPEAN

PROJECTION

ISSUE DATE

IEC JEDEC JEITA

SOT78 SC-46

3-lead TO-220AB

SOT78

08-04-23 08-06-13

Notes

1. Lead shoulder designs may vary.

2. Dimension includes excess dambar.

UNIT A

4.7

4.1

1.40

1.25

0.9

0.6

0.7

0.4

16.0

15.2

6.6

5.9

10.3

9.7

15.0

12.8

3.30

2.79

3.8

3.5

DIMENSIONS (mm are the original dimensions)

Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB

0 5 10 mm

scale

b b

(2)

1.6

1.0

c D

1.3

1.0

(2)

E e

2.54

L L

(1)

max.

3.0

p q

3.0

2.7

2.6

2.2

123

(1)

(2)

(3×)

(2)

(2×)

b(3×)

(1)

mounting

base

7. Package outline

BYV410-600

Dual enhanced ultrafast power diode

Fig 7. Package outline SOT78 (TO-220AB)

Product data sheet Rev. 2 — 5 August 2011 7 of 11

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NXP Semiconductors

8. Revision history

BYV410-600

Dual enhanced ultrafast power diode

Table 7. Revision history

Document ID Release date Data sheet status Change notice Supersedes

BYV410-600 v.2 20110805 Product data sheet - BYV410-600_1 Modifications: BYV410-600_1 20090629 Product data sheet - -

• Various changes to content.

Product data sheet Rev. 2 — 5 August 2011 8 of 11

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NXP Semiconductors

BYV410-600

Dual enhanced ultrafast power diode

9. Legal information

9.1 Data sheet status

Document status

Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.

[1] Please consult the most recently issued document before initiating or completing a design. [2] The term 'short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was publish ed and may differ in case of multiple devices. The latest product

status information is available on the Internet at URL http://www.nxp.com.

[1] [2]

Product status

[3]

Definition

9.2 Definitions

Preview — The document is a preview version only. The document is still

subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information.

Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to co nt ain det ailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.

Product specificatio n — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet.

9.3 Disclaimers

Limited warranty and liability — Information in this document is believed to

be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information.

In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory.

Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semi conductors’ aggregat e and cumulative liabil ity towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors.

Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including withou t limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied pri or to the publication hereof.

Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk.

Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteri stics sections of this document, and as such is not complete, exhaustive or legally binding.

Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification.

Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products.

NXP Semiconductors does not accept any liability related to any default , damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third part y customer(s). NXP does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device.

Product data sheet Rev. 2 — 5 August 2011 9 of 11

Page 11

NXP Semiconductors

BYV410-600

Dual enhanced ultrafast power diode

Terms and conditions of commercial sale — NXP Semiconductors

products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer.

No offer to sell or license — Nothing in this document may be interpret ed or construed as an offer to sell products that is open f or accept ance or the grant , conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.

Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities.

Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It i s neit her qua lif ied nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications.

, unless otherwise

10. Contact information

For more information, please visit: http://www.nxp.com

In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and st andards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, da mages or failed produ ct claims result ing from custome r design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications.

9.4 Trademarks

Notice: All referenced brands, prod uct names, service names and trademarks are the property of their respective owners.

Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV, FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse, QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET, TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V .

HD Radio and HD Radio logo — are trademarks of iBiquity Digital

Corporation.

For sales office addresses, please send an email to: salesaddresses@nxp.com

Product data sheet Rev. 2 — 5 August 2011 10 of 11

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NXP Semiconductors

11. Contents

1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . .1

1.1 General description . . . . . . . . . . . . . . . . . . . . . .1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . .1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . .2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . .2

4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3

5 Thermal characteristics . . . . . . . . . . . . . . . . . . .4

6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .5

7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .7

8 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . .8

9 Legal information. . . . . . . . . . . . . . . . . . . . . . . . .9

9.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . .9

9.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9

9.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . .9

9.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .10

10 Contact information. . . . . . . . . . . . . . . . . . . . . .10

BYV410-600

Dual enhanced ultrafast power diode

Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’.

For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 5 August 2011

Document identifier: BYV410-600