Datasheet BYV4100 Datasheet (Philips)

DISCRETE SEMICONDUCTORS

DATA SH EET

handbook, 2 columns

M3D118

BYV4100

Fast soft-recovery
controlled avalanche rectifier

Product specification

1996 Oct 07

Philips Semiconductors Product specification

Fast soft-recovery

BYV4100

controlled avalanche rectifier

FEATURES

• Glass passivated

• High maximum operating

temperature

DESCRIPTION

Rugged glass SOD64 package, using
a high temperature alloyed
construction.

• Low leakage current

• Excellent stability

• Guaranteed avalanche energy

ka

absorption capability

2/3 page (Datasheet)

• Available in ammo-pack

• Also available with preformed leads

for easy insertion.

Fig.1 Simplified outline (SOD64) and symbol.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

RRM

V

R

I

F(AV)

repetitive peak reverse voltage − 100 V
continuous reverse voltage − 100 V
average forward current Ttp=65°C; lead length = 10 mm;

averaged over any 20 ms period;
see Fig.2; see also Fig.4

T

=60°C; PCB mounting

amb

(see Fig.12); averaged over any
20 ms period; see Fig.3; see
also Fig.4

I

FRM

I

FSM

E

T
T

RSM

stg
j

repetitive peak forward current Ttp=65°C; see Fig.6 − 34 A

T

=60°C; see Fig.7 − 17 A

amb

non-repetitive peak forward current t = 10 ms half sine wave;

non-repetitive peak reverse
avalanche energy

Tj=T
VR=V

L = 120 mH; Tj=T
surge; inductive load switched off

prior to surge;

j max

RRMmax

j max

storage temperature −65 +175 °C
junction temperature −65 +175 °C

This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.

MAM104

− 4.0 A

− 1.9 A

− 90 A

prior to

− 20 mJ

1996 Oct 07 2

Philips Semiconductors Product specification

Fast soft-recovery

BYV4100

controlled avalanche rectifier

ELECTRICAL CHARACTERISTICS

T

=25°C unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

F

V

(BR)R

I

R

t

rr

C

d

dI

R

-------­dt

forward voltage IF= 3.5 A; Tj=T

I

= 3.5 A; see Fig.5 −−0.98 V

F

reverse avalanche

IR= 0.1 mA 120 −−V

; see Fig.5 −−0.78 V

j max

breakdown voltage
reverse current VR=V

RRMmax

;

−− 5µA

see Fig.8
V

R=VRRMmax

; Tj= 165 °C;

−−150 µA

see Fig.8

reverse recovery time when switched from IF= 0.5 A

−− 15 ns
to IR= 1 A; measured at
IR= 0.25 A; see Fig.10

diode capacitance f = 1 MHz; VR= 0 V; see Fig.9 − 245 − pF
maximum slope of reverse

recovery current

when switched from I
VR≥ 30 V and dIF/dt = −1A/µs;

= 1 A to

F

−− 2A/µs

see Fig.11

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R
R

th j-tp
th j-a

thermal resistance from junction to tie-point lead length = 10 mm 25 K/W
thermal resistance from junction to ambient note 1 75 K/W

Note

1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.12.
For more information please refer to the

“General Part of associated Handbook”

.

1996 Oct 07 3

Philips Semiconductors Product specification

Fast soft-recovery
controlled avalanche rectifier

GRAPHICAL DATA

handbook, halfpage

5

I

F(AV)

(A)

4

3

2

1

0

0 200

Switched mode application.
a =1.42; δ = 0.5; VR=V

RRMmax

100

.

Ttp (°C)

MGD747

handbook, halfpage

3

I

F(AV)

(A)

2

1

0

0

Switched mode application.
a = 1.42; δ = 0.5; VR=V
Device mounted as shown in Fig.12.

RRMmax

BYV4100

MGD748

100

.

T

amb

(°C)

200

Fig.2 Maximum permissible average forward

current as a function of tie-point temperature
(including losses due to reverse leakage).

handbook, halfpage

6

P

(W)

5

4

3

2

1

0

04

a=I

F(RMS)/IF(AV)

; δ = 0.5; VR=V

a = 3

2

I

F(AV)

.

RRMmax

MGD749

22.5

1.57

1.42

(A)

Fig.4 Maximum steady state power dissipation

(forward plus leakage current losses,
excluding switching losses) as a function of
average forward current.

Fig.3 Maximum permissible average forward

current as a function of ambient temperature
(including losses due to reverse leakage).

10

handbook, halfpage

I

F

(A)

8

6

4

2

0

02

Dotted line: Tj= 175 °C.
Solid line: Tj=25°C.

1

MGD750

VF (V)

Fig.5 Maximum forward voltage as a function of

forward current.

1996 Oct 07 4

Philips Semiconductors Product specification

Fast soft-recovery
controlled avalanche rectifier

40

handbook, full pagewidth

I

FRM

(A)

30

20

10

0

−2

10

−1

10

BYV4100

δ = 0.05

0.1

0.2

0.5
1

110

10

2

3

10

tp (ms)

MGD751

4

10

Ttp=65°C; R

= 25 K/W; VR=V

th j-tp

RRMmax

during 1 −δ.

Fig.6 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.

20

handbook, full pagewidth

I

FRM

(A)

15

10

5

0

−2

10

−1

10

δ = 0.05

0.1

0.2

0.5
1

110

10

2

3

10

tp (ms)

MGD752

4

10

T

=60°C; R

amb

= 75 K/W; VR=V

th j-a

RRMmax

during 1 −δ.

Fig.7 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.

1996 Oct 07 5

Philips Semiconductors Product specification

Fast soft-recovery
controlled avalanche rectifier

3

10

handbook, halfpage

I

R

(µA)

2

10

10

1

0 100 200

Tj (°C)

MGC550

3

10

handbook, halfpage

C

d

(pF)

2

10

10

11010

BYV4100

MGD753

V

(V)

R

2

VR=V

RRMmax

.

Fig.8 Reverse current as a function of junction

temperature; maximum values.

handbook, full pagewidth

DUT

0.5 A

50 Ω

f = 1 MHz; Tj=25°C.

Fig.9 Diode capacitance as a function of reverse

voltage; typical values.

I

F

(A)

0.5

0.25

0.5

I

R

(A)

1.0

0

t

rr

MAM282

t

Rise time oscilloscope: tr≤ 2 ns.
Turn-on time switch: t ≤ 3 ns.

Fig.10 Test circuit and reverse recovery time waveform and definition.

1996 Oct 07 6

Philips Semiconductors Product specification

Fast soft-recovery
controlled avalanche rectifier

I

ndbook, halfpage

F

dI

F

dt

t

rr

dI

R

dt

I

R

10%

100%

t

MGC499

handbook, halfpage

BYV4100

50
25

7

50

2

3

MGA200

Fig.11 Reverse recovery definitions.

Dimensions in mm.

Fig.12 Device mounted on a printed-circuit board.

1996 Oct 07 7

Philips Semiconductors Product specification

Fast soft-recovery
controlled avalanche rectifier

PACKAGE OUTLINE

handbook, full pagewidth

4.5

max

Dimensions in mm.
The marking band indicates the cathode.

BYV4100

ka

28 min28 min 5.0 max

Fig.13 SOD64.

1.35
max

MBC049

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1996 Oct 07 8