Page 1
DISCRETE SEMICONDUCTORS
DATA SH EET
handbook, 2 columns
M3D116
BYV36 series
Fast soft-recovery
controlled avalanche rectifiers
Product specification
Supersedes data of 1996 May 30
File under Discrete Semiconductors, SC01
1996 Jul 01
Page 2
Philips Semiconductors Product specification
Fast soft-recovery
BYV36 series
controlled avalanche rectifiers
FEATURES
• Glass passivated
• High maximum operating
DESCRIPTION
Rugged glass SOD57 package,
using a high temperature alloyed
temperature
• Low leakage current
• Excellent stability
ka
• Guaranteed avalanche energy
2/3 page (Datasheet)
absorption capability
• Available in ammo-pack.
Fig.1 Simplified outline (SOD57) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
RRM
repetitive peak reverse voltage
BYV36A − 200 V
BYV36B − 400 V
BYV36C − 600 V
BYV36D − 800 V
BYV36E − 1000 V
BYV36F − 1200 V
BYV36G − 1400 V
V
R
continuous reverse voltage
BYV36A − 200 V
BYV36B − 400 V
BYV36C − 600 V
BYV36D − 800 V
BYV36E − 1000 V
BYV36F − 1200 V
BYV36G − 1400 V
I
F(AV)
average forward current Ttp=60°C; lead length = 10 mm;
BYV36A to C − 1.6 A
BYV36D and E − 1.5 A
see Figs 2; 3 and 4
averaged over any 20 ms period;
see also Figs 14; 15 and 16
BYV36F and G − 1.5 A
I
F(AV)
average forward current T
BYV36A to C − 0.87 A
BYV36D and E − 0.81 A
=60°C; PCB mounting (see
amb
Fig.25); see Figs 5; 6 and 7
averaged over any 20 ms period;
see also Figs 14; 15 and 16
BYV36F and G − 0.81 A
construction. This package is
hermetically sealed and fatigue free
as coefficients of expansion of all
used parts are matched.
MAM047
1996 Jul 01 2
Page 3
Philips Semiconductors Product specification
Fast soft-recovery
BYV36 series
controlled avalanche rectifiers
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
FRM
I
FRM
I
FSM
E
RSM
T
stg
T
j
ELECTRICAL CHARACTERISTICS
=25°C unless otherwise specified.
T
j
repetitive peak forward current Ttp=60°C; see Figs 8; 9 and 10
BYV36A to C − 18 A
BYV36D and E − 17 A
BYV36F and G − 15 A
repetitive peak forward current T
=60°C; see Figs 11;12and13
amb
BYV36A to C − 9A
BYV36D and E − 8A
BYV36F and G − 8A
non-repetitive peak forward current t = 10 ms half sine wave; Tj=T
non-repetitive peak reverse
avalanche energy
prior to surge; VR=V
L = 120 mH; Tj=T
inductive load switched off
RRMmax
prior to surge;
j max
j max
− 30 A
− 10 mJ
storage temperature −65 +175 °C
junction temperature see Figs 17 and 18 −65 +175 °C
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
forward voltage IF= 1 A; Tj=T
BYV36A to C −−1.00 V
see Figs 19; 20 and 21
j max
;
BYV36D and E −−1.05 V
BYV36F and G −−1.05 V
V
F
forward voltage IF=1A;
BYV36A to C −−1.35 V
see Figs 19; 20 and 21
BYV36D and E −−1.45 V
BYV36F and G −−1.45 V
V
(BR)R
reverse avalanche breakdown
IR= 0.1 mA
voltage
BYV36A 300 −−V
BYV36B 500 −−V
BYV36C 700 −−V
BYV36D 900 −−V
BYV36E 1100 −−V
BYV36F 1300 −−V
BYV36G 1500 −−V
I
R
reverse current VR=V
V
R=VRRMmax
; see Fig.22 −− 5µA
RRMmax
;
−−150 µA
Tj= 165 °C; see Fig.22
1996 Jul 01 3
Page 4
Philips Semiconductors Product specification
Fast soft-recovery
BYV36 series
controlled avalanche rectifiers
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
t
rr
C
d
dI
R
-------dt
THERMAL CHARACTERISTICS
reverse recovery time when switched from
BYV36A to C −−100 ns
BYV36D and E −−150 ns
BYV36F and G −−250 ns
diode capacitance f = 1 MHz; VR=0V;
BYV36A to C − 45 − pF
BYV36D and E − 40 − pF
BYV36F and G − 35 − pF
maximum slope of reverse recovery
current
BYV36A to C −− 7A/µs
BYV36D and E −− 6A/µs
BYV36F and G −− 5A/µs
IF= 0.5 A to IR=1A;
measured at IR= 0.25 A;
see Fig. 26
see Figs 23 and 24
when switched from
I
= 1 A to VR≥ 30 V and
F
dIF/dt = −1A/µs;
see Fig.27
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-tp
R
th j-a
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.25.
For more information please refer to the
thermal resistance from junction to tie-point lead length = 10 mm 46 K/W
thermal resistance from junction to ambient note 1 100 K/W
‘General Part of Handbook SC01’
.
1996 Jul 01 4
Page 5
Philips Semiconductors Product specification
Fast soft-recovery
controlled avalanche rectifiers
GRAPHICAL DATA
1.6
I
F(AV)
(A)
1.2
20 15 10 lead length (mm)
0.8
0.4
0
0 200
BYV36A toC
a =1.42; VR=V
Switched mode application.
RRMmax
; δ= 0.5.
100
o
Ttp( C)
MSA867
1.6
I
F(AV)
(A)
1.2
0.8
0.4
0
0 200
BYV36D andE
a =1.42; VR=V
Switched mode application.
20 15 10 lead length (mm)
100
; δ= 0.5.
RRMmax
BYV36 series
MSA866
o
Ttp( C)
Fig.2 Maximum average forward current as a
function of tie-point temperature (including
losses due to reverse leakage).
2.0
handbook, halfpage
I
F(AV)
(A)
1.6
1.2
0.8
0.4
0
0 200
BYV36F andG
a =1.42; VR=V
Switched mode application.
RRMmax
lead length 10 mm
; δ= 0.5.
100
o
T ( C)
tp
MBD419
Fig.3 Maximum average forward current as a
function of tie-point temperature (including
losses due to reverse leakage).
1.2
handbook, halfpage
I
F(AV)
(A)
0.8
0.4
0
0 200
BYV36A toC
a =1.42; VR=V
Device mounted as shown in Fig.25.
Switched mode application.
RRMmax
; δ= 0.5.
100
T ( C)
amb
MSA865
o
Fig.4 Maximum average forward current as a
function of tie-point temperature (including
losses due to reverse leakage).
1996 Jul 01 5
Fig.5 Maximum average forward current as a
function of ambient temperature (including
losses due to reverse leakage).
Page 6
Philips Semiconductors Product specification
Fast soft-recovery
controlled avalanche rectifiers
1.2
handbook, halfpage
I
F(AV)
(A)
0.8
0.4
0
0 200
BYV36D andE
a =1.42; VR=V
Device mounted as shown in Fig.25.
Switched mode application.
RRMmax
; δ= 0.5.
100
o
T ( C)
amb
MSA864
1.2
handbook, halfpage
I
F(AV)
(A)
0.8
0.4
0
0 200
BYV36F andG
a =1.42; VR=V
Device mounted as shown in Fig.25.
Switched mode application.
RRMmax
; δ= 0.5.
BYV36 series
100
T ( C)
amb
MBD420
o
Fig.6 Maximum average forward current as a
function of ambient temperature (including
losses due to reverse leakage).
20
I
FRM
(A)
= 0.05
16
12
8
4
0
2
10
BYV36A toC
Ttp=60°C; R
V
during 1 −δ; curves include derating for T
RRMmax
th j-tp
= 46 K/W.
10
1
δ
0.1
0.2
0.5
1
11010
at V
j max
RRM
= 600 V.
Fig.7 Maximum average forward current as a
function of ambient temperature (including
losses due to reverse leakage).
MBD446
2103
t (ms)
p
10
4
Fig.8 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
1996 Jul 01 6
Page 7
Philips Semiconductors Product specification
Fast soft-recovery
controlled avalanche rectifiers
20
I
FRM
(A)
16
12
8
4
0
2
10
BYV36D and E
Ttp=60°C; R
V
during 1 −δ; curves include derating for T
RRMmax
th j-tp
= 46 K/W.
10
1
δ
0.1
0.2
0.5
11010
at V
j max
= 0.05
1
RRM
= 1000 V.
2103
BYV36 series
MBD447
4
t (ms)
p
10
Fig.9 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
16
I
FRM
(A)
12
8
4
0
2
10
BYV36F and G
Ttp=60°C; R
V
during 1 −δ; curves include derating for T
RRMmax
th j-tp
= 46 K/W.
10
1
= 0.05
δ
0.1
0.2
0.5
1
11010
at V
RRM
= 1400 V.
j max
2103
t (ms)
p
MLB529
4
10
Fig.10 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
1996 Jul 01 7
Page 8
Philips Semiconductors Product specification
Fast soft-recovery
controlled avalanche rectifiers
10
I
FRM
(A)
8
6
4
2
0
2
10
BYV36A to C
T
=60°C; R
amb
V
RRMmax
th j-a
during 1 −δ; curves include derating for T
10
= 100 K/W.
1
δ
0.1
0.2
0.5
1
11010
at V
j max
= 0.05
RRM
= 600 V.
2103
BYV36 series
MBD441
4
t (ms)
p
10
Fig.11 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
10
I
FRM
(A)
8
6
4
2
0
2
10
BYV36D and E
T
=60°C; R
amb
V
RRMmax
th j-a
during 1 −δ; curves include derating for T
10
= 100 K/W.
1
= 0.05
δ
0.1
0.2
0.5
1
11010
at V
RRM
= 1000 V.
j max
2103
t (ms)
p
MBD444
4
10
Fig.12 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
1996 Jul 01 8
Page 9
Philips Semiconductors Product specification
Fast soft-recovery
controlled avalanche rectifiers
8
I
FRM
(A)
6
4
2
0
2
10
BYV36F and G
T
=60°C; R
amb
V
RRMmax
th j-a
during 1 −δ; curves include derating for T
10
= 100 K/W.
1
δ
0.1
0.2
0.5
1
11010
at V
j max
= 0.05
RRM
= 1400 V.
2103
BYV36 series
MLB530
4
t (ms)
p
10
Fig.13 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
F(AV)
1.42
(A)
MSA861
3
P
(W)
2
1
0
02
BYV36D and E
a=I
F(RMS)/IF(AV)
; VR=V
RRMmax
a = 3
; δ = 0.5.
2.5 2 1.57
1
I
F(AV)
1.42
(A)
Fig.15 Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function of
average forward current.
3
P
(W)
2
1
0
02
BYV36A to C
a=I
F(RMS)/IF(AV)
; VR=V
RRMmax
a = 3
; δ = 0.5.
2.5 2 1.57
1
I
Fig.14 Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function of
average forward current.
MSA862
1996 Jul 01 9
Page 10
Philips Semiconductors Product specification
Fast soft-recovery
controlled avalanche rectifiers
3
P
(W)
2
1
0
02
BYV36F and G
a=I
F(RMS)/IF(AV)
; VR=V
a = 3 2.5 2 1.57 1.42
1
; δ = 0.5.
RRMmax
I (A)
F(AV)
MBD429
Fig.16 Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function of
average forward current.
200
handbook, halfpage
T
j
o
( C)
100
0
BYV36A to E
Solid line = VR.
Dotted line = V
Fig.17 Maximum permissible junction temperature
BYV36 series
MSA857
ABCDE
0 400 1200
; δ = 0.5.
RRM
as a function of reverse voltage.
800
V (V)
R
V (V)
R
MLB599
200
handbook, halfpage
T
j
o
( C)
100
0
0 2000
BYV36F and G
Solid line = VR.
Dotted line = V
RRM
FG
1000
; δ = 0.5.
Fig.18 Maximum permissible junction temperature
as a function of reverse voltage.
10
handbook, halfpage
I
F
(A)
8
6
4
2
0
012
BYV36A to C
Dotted line: Tj= 175 °C.
Solid line: Tj=25°C.
V
F
Fig.19 Forward current as a function of forward
voltage; maximum values.
MSA863
(V)
3
1996 Jul 01 10
Page 11
Philips Semiconductors Product specification
Fast soft-recovery
controlled avalanche rectifiers
10
handbook, halfpage
I
F
(A)
8
6
4
2
0
012 4
BYV36D and E
Dotted line: Tj= 175 °C.
Solid line: Tj=25°C.
3
VF (V)
MLB531
10
handbook, halfpage
I
F
(A)
8
6
4
2
0
012
BYV36F and G
Dotted line: Tj= 175 °C.
Solid line: Tj=25°C.
BYV36 series
MBD424
V
3
(V)
F
Fig.20 Forward current as a function of forward
voltage; maximum values.
3
10
handbook, halfpage
I
R
(µA)
2
10
10
1
0 100 200
VR=V
RRMmax
.
Tj (°C)
MGC550
Fig.21 Forward current as a function of forward
voltage; maximum values.
2
10
handbook, halfpage
C
d
(pF)
BYV36A,B,C
10
BYV36D,E
1
1
BYV36A to E.
f = 1 MHz; Tj=25°C.
10 10
2
V (V)
R
MSA868
3
10
Fig.22 Reverse current as a function of junction
temperature; maximum values.
1996 Jul 01 11
Fig.23 Diode capacitance as a function of reverse
voltage, typical values.
Page 12
Philips Semiconductors Product specification
Fast soft-recovery
controlled avalanche rectifiers
2
10
handbook, halfpage
C
d
(pF)
10
1
1
BYV36F and G.
f = 1 MHz; Tj=25°C.
10 10
2
Fig.24 Diode capacitance as a function of reverse
voltage, typical values.
MBD436
3
10
V (V)
R
BYV36 series
handbook, halfpage
4
10
Dimensions in mm.
Fig.25 Device mounted on a printed-circuit board.
50
25
7
50
2
3
MGA200
handbook, full pagewidth
10 Ω
Input impedance oscilloscope: 1 MΩ, 22 pF; tr≤ 7 ns.
Source impedance: 50 Ω; tr≤ 15 ns.
25 V
+
50 Ω
DUT
1 Ω
I
(A)
0.25
R
Fig.26 Test circuit and reverse recovery time waveform and definition.
1996 Jul 01 12
I
(A)
0.5
0.5
F
t
rr
0
1
t
MAM057
Page 13
Philips Semiconductors Product specification
Fast soft-recovery
controlled avalanche rectifiers
I
ndbook, halfpage
F
dI
F
dt
t
rr
dI
R
dt
I
R
10%
100%
BYV36 series
t
MGC499
Fig.27 Reverse recovery definitions.
1996 Jul 01 13
Page 14
Philips Semiconductors Product specification
Fast soft-recovery
controlled avalanche rectifiers
PACKAGE OUTLINE
handbook, full pagewidth
3.81
max
Dimensions in mm.
The marking band indicates the cathode.
BYV36 series
ka
4.57
max
28 min28 min
Fig.28 SOD57.
0.81
max
MBC880
DEFINITIONS
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Jul 01 14
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