Datasheet BYV32F-200, BYV32F-150, BYV32EX-200, BYV32EX-150 Datasheet (Philips)

Page 1
Philips Semiconductors Product specification
Rectifier diodes BYV32F, BYV32EX series ultrafast, rugged
FEATURES SYMBOL QUICK REFERENCE DATA
• Low forward volt drop V
• Fast switching
• Reverse surge capability
a1
13
a2
• High thermal cycling performance I
k
• Isolated mounting tab
2
= 150 V/ 200 V
R
0.85 V
F
= 12 A
O(AV)
I
= 0.2 A
RRM
trr 25 ns
GENERAL DESCRIPTION
Dual, ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power supplies.
The BYV32F series is supplied in the SOT186 package. The BYV32EX series is supplied in the SOT186A package.
PINNING SOT186 SOT186A
PIN DESCRIPTION
1 anode 1 (a) 2 cathode (k) 3 anode 2 (a)
tab isolated
case
123
case
123
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
BYV32F / BYV32EX -150 -200
V
RRM
V
RWM
V
R
I
O(AV)
I
FRM
I
FSM
I
RRM
I
RSM
T
stg
T
j
1 Neglecting switching and reverse current losses
Peak repetitive reverse voltage - 150 200 V Crest working reverse voltage - 150 200 V Continuous reverse voltage - 150 200 V
Average rectified output current square wave - 12 A (both diodes conducting)
1
δ = 0.5; Ths 95 ˚C Repetitive peak forward current t = 25 µs; δ = 0.5; - 20 A per diode Ths 95 ˚C Non-repetitive peak forward t = 10 ms - 125 A current per diode t = 8.3 ms - 137 A
sinusoidal; with reapplied
V
RWM(max)
Repetitive peak reverse current tp = 2 µs; δ = 0.001 - 0.2 A per diode Non-repetitive peak reverse tp = 100 µs - 0.2 A current per diode Storage temperature -40 150 ˚C Operating junction temperature - 150 ˚C
October 1998 1 Rev 1.300
Page 2
Philips Semiconductors Product specification
Rectifier diodes BYV32F, BYV32EX series ultrafast, rugged
ESD LIMITING VALUE
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
C
Electrostatic discharge Human body model; - 8 kV capacitor voltage C = 250 pF; R = 1.5 k
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
isol
R.M.S. isolation voltage from all SOT186A package; f = 50-60 Hz; - 2500 V three terminals to external sinusoidal waveform; R.H. 65%; heatsink clean and dustfree
V
isol
Repetitive peak voltage from all SOT186 package; R.H. 65%; - 1500 V three terminals to external clean and dustfree heatsink
C
isol
Capacitance from pin 2 to f = 1 MHz - 10 - pF external heatsink
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R R
th j-hs
th j-a
Thermal resistance junction to with heatsink compound - - 5.0 K/W heatsink (per diode) without heatsink compound - - 7.0 K/W Thermal resistance junction to in free air - 55 - K/W ambient
ELECTRICAL CHARACTERISTICS
characteristics are per diode at Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
I
R
Q
s
t
rr1
t
rr2
I
rrm
V
fr
Forward voltage IF = 8 A; Tj = 150˚C - 0.72 0.85 V
IF = 20 A - 1.00 1.15 V Reverse current VR = V
VR = V Reverse recovery charge IF = 2 A; VR 30 V; -dIF/dt = 20 A/µs - 8 12.5 nC
; Tj = 100 ˚C - 0.2 0.6 mA
RWM RWM
-630µA
Reverse recovery time IF = 1 A; VR 30 V; - 20 25 ns
-dIF/dt = 100 A/µs
Reverse recovery time IF = 0.5 A to IR = 1 A; I
= 0.25 A - 10 20 ns
rec
Peak reverse recovery current IF = 1 A; VR 30 V; - 1.5 2 A
-dIF/dt = 50 A/µs; Tj = 100˚C
Forward recovery voltage IF = 1 A; dIF/dt = 10 A/µs-1-V
October 1998 2 Rev 1.300
Page 3
Philips Semiconductors Product specification
Rectifier diodes BYV32F, BYV32EX series ultrafast, rugged
I
F
dI
F
dt
t
rr
time
Q
s
I
R
I
F
I
rrm
Fig.1. Definition of t
, Qs and I
rr1
10%
100%
rrm
time
V
F
V
fr
V
F
time
Fig.2. Definition of V
fr
0.5A
IF
0A
I = 0.25A
rec
IR
trr2
I = 1A
R
Fig.4. Definition of t
PF / W
15
Vo = 0.7 V Rs = 0.0183 Ohms
10
0.1
5
0
0 5 10 15
BYV32
0.2
IF(AV) / A
rr2
Ths(max) / C
D = 1.0
0.5
p
t
I
D =
T
Fig.5. Maximum forward dissipation PF = f(I
diode; square current waveform where
I
F(AV)
=I
F(RMS)
x √D.
t T
p
t
F(AV)
75
100
125
150
) per
R
Voltage Pulse Source
D.U.T.
PF / W
10
Vo = 0.7 V Rs = 0.0183 Ohms
8
6
4
BYV32
2.2
2.8
4
Ths(max) / C
1.9 a = 1.57
100
110
120
130
Current shunt
Fig.3. Circuit schematic for t
to ’scope
rr2
2
0
0246810
IF(AV) / A
Fig.6. Maximum forward dissipation PF = f(I
F(AV)
140
150
) per
diode; sinusoidal current waveform where a = form
factor = I
F(RMS)
/ I
F(AV)
.
October 1998 3 Rev 1.300
Page 4
Philips Semiconductors Product specification
Rectifier diodes BYV32F, BYV32EX series ultrafast, rugged
trr / ns
1000
100
10
1
1 10 100
IF=10A
IF=1A
dIF/dt (A/us)
Fig.7. Maximum trr at Tj = 25 ˚C; per diode
Irrm / A
10
IF=10A
1
IF=1A
0.1
Qs / nC
100
IF=10A
5A 2A 1A
10
1.0
1.0 10 100
-dIF/dt (A/us)
Fig.10. Maximum Qs at Tj = 25 ˚C; per diode
Transient thermal impedance, Zth j-hs (K/W)
10
1
0.1
p
0.01
p
t
P
D
D =
t T
0.01 1
Fig.8. Maximum I
IF / A
30
Tj=150 C Tj=25 C
20
10
0
0 1
0.5 1.5
10 100
-dIF/dt (A/us)
at Tj = 25 ˚C; per diode
rrm
typ
max
VF / V
Fig.9. Typical and maximum forward characteristic
IF = f(VF); parameter T
j
0.001 1us 10us 100us 1ms 10ms 100ms 1s 10s
pulse width, tp (s)
T
t
BYV32F/EX
Fig.11. Transient thermal impedance; per diode;
Z
= f(tp).
th j-hs
October 1998 4 Rev 1.300
Page 5
Philips Semiconductors Product specification
Rectifier diodes BYV32F, BYV32EX series ultrafast, rugged
MECHANICAL DATA
Dimensions in mm Net Mass: 2 g
3.5 max
not tinned
10.2 max
5.7
max
3.2
3.0
4.4
0.9
0.5
4.4
4.0
seating
plane
13.5 min
4.4
max
2.9 max
7.9
7.5 17
max
123
M
0.4
5.08
Fig.12. SOT186; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
0.9
0.7
2.54
top view
0.55 max
1.3
October 1998 5 Rev 1.300
Page 6
Philips Semiconductors Product specification
Rectifier diodes BYV32F, BYV32EX series ultrafast, rugged
MECHANICAL DATA
Dimensions in mm Net Mass: 2 g
10.3
Recesses (2x)
2.5
0.8 max. depth
3 max.
not tinned
13.5 min.
0.4
M
max
3.2
3.0
123
5.08
2.8
2.54
15.8 max.
3
19
max.
seating
plane
0.5
2.5
4.6
max
2.9 max
6.4
0.6
2.5
15.8 max
Fig.13. SOT186A; The seating plane is electrically isolated from all terminals.
1.3
1.0 (2x)
0.9
0.7
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
October 1998 6 Rev 1.300
Page 7
Philips Semiconductors Product specification
Rectifier diodes BYV32F, BYV32EX series ultrafast, rugged
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
October 1998 7 Rev 1.300
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