Datasheet BYV32E-200.127 Specification

IMPORTANT NOTICE

10 December 2015

1. Global joint venture starts operations as WeEn Semiconductors

Dear customer,

As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset
Management Co. Ltd established Bipolar Power joint venture (JV), WeEn Semiconductors, which
will be used in future Bipolar Power documents together with new contact details.

In this document where the previous NXP references remain, please use the new links as shown
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on the version) “© NXP Semiconductors N.V. {year}. All rights reserved” becomes “© WeEn
Semiconductors Co., Ltd. {year}. All rights reserved”

If you have any questions related to this document, please contact our nearest sales office via e­mail or phone (details via [e-mail]).

Thank you for your cooperation and understanding,

WeEn Semiconductors

1. Product profile

1.1 General description

Ultrafast dual epitaxial rectifier diode in a SOT78 (TO-220AB) plastic package.

1.2 Features and benefits

BYV32E-200

Dual rugged ultrafast rectifier diode, 20 A, 200 V

Rev. 04 — 27 February 2009 Product data sheet

 High reverse voltage surge capability
 High thermal cycling performance
 Low thermal resistance

 Soft recovery characteristic minimizes

power consuming oscillations

 Very low on-state loss

1.3 Applications

 Output rectifiers in high-frequency

switched-mode power supplies

1.4 Quick reference data

Table 1. Quick reference

Symbol Parameter Conditions Min Typ Max Unit

V

RRM

I

O(AV)

I

RRM

V

ESD

Dynamic characteristics

t

rr

Static characteristics

V

F

repetitive peak
reverse voltage

average output
current

repetitive peak
reverse current

electrostatic
discharge voltage

reverse recovery
time

forward voltage IF=8A; Tj=150°C; see

square-wave pulse; δ = 0.5;

≤ 115 °C; both diodes

T

mb

conducting; see Figure 1
see Figure 2

tp=2µs; δ =0.001 --0.2A

HBM; C = 250 pF; R = 1.5
kΩ; all pins

IF=1A; VR=30V;
dIF/dt = 100 A/µs;

= 25 °C; ramp recovery;

T

j

see Figure 5
I

=1A; IF=0.5A;

R

= 25 °C; step recovery;

T

j

measured at reverse current
= 0.25 A; see Figure 6

Figure 4

;

- - 200 V

--20A

--8kV

- 2025ns

- 1020ns

- 0.72 0.85 V

NXP Semiconductors

2. Pinning information

BYV32E-200

Dual rugged ultrafast rectifier diode, 20 A, 200 V

Table 2. Pinning information

Pin Symbol Description Simplified outline Graphic symbol

1 A1 anode 1
2 K cathode
3 A2 anode 2
mb K mounting base; cathode

12mb3

SOT78

(TO - 22 0A B; S C - 46 )

3. Ordering information

Table 3. Ordering information

Type number Package

BYV32E-200 TO-220AB;

Name Description Version

plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead

SC-46

TO-220AB

K

SOT78

A2A1

sym125

BYV32E-200_4 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 04 — 27 February 2009 2 of 9

NXP Semiconductors

4. Limiting values

BYV32E-200

Dual rugged ultrafast rectifier diode, 20 A, 200 V

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

V

RRM

V

RWM

V

R

I

O(AV)

I

FRM

I

FSM

I

RRM

I

RSM

T

stg

T

j

V

ESD

repetitive peak reverse
voltage

crest working reverse
voltage

reverse voltage DC - 200 V
average output current square-wave pulse; δ = 0.5; Tmb≤ 115 °C; both

; see Figure 2

repetitive peak forward

diodes conducting; see Figure 1
δ = 0.5; tp= 25 µs; Tmb≤ 115 °C; per diode - 20 A

current
non-repetitive peak

forward current

tp= 8.3 ms; sine-wave pulse; T
diode

t

= 10 ms; sine-wave pulse; T

p

= 25 °C; per

j(init)

=25°C; per

j(init)

diode

repetitive peak reverse

δ = 0.001; tp=2µs - 0.2 A

current
non-repetitive peak

tp= 100 µs - 0.2 A

reverse current
storage temperature -40 150 °C
junction temperature - 150 °C
electrostatic discharge

HBM; C = 250 pF; R = 1.5 kΩ; all pins - 8 kV

voltage

-200V

-200V

-20A

-137A

-125A

12

P

tot

(W)

8

4

0

01284

2.8

4.0

a = 1.57

1.9

2.2

Fig 1. Forward power dissipation as a function of

average forward current; sinusoidal waveform;
maximum values

BYV32E-200_4 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 04 — 27 February 2009 3 of 9

003aac978

I

F(AV)

(A)

15

P

tot

(W)

0.5

10

0.2

0.1

5

0

015105

Fig 2. Forward power dissipation as a function of

average forward current; square waveform;
maximum values

003aac979

δ = 1

I

F(AV)

(A)

NXP Semiconductors

5. Thermal characteristics

BYV32E-200

Dual rugged ultrafast rectifier diode, 20 A, 200 V

Table 5. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

R

th(j-mb)

thermal resistance from
junction to mounting
base

with heatsink compound; both diodes
conducting

with heatsink compound; per diode; see

--1.6K/W

--2.4K/W

Figure 3

R

th(j-a)

thermal resistance from

-60-K/W

junction to ambient

t

p

T

−1

003aac980

t

p

δ =

T

t

tp (s)

10110

Z

th(j-mb)

(K/W)

10

1

−1

10

−2

10

−3

10

−6

−5

10

10

−4

10

10−310

P

−2

Fig 3. Transient thermal impedance from junction to mounting base as a function of pulse width

6. Characteristics

Table 6. Characteristics

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

V

F

I

R

forward voltage IF=20A; Tj=25°C - 1 1.15 V

reverse current VR=200V; Tj= 100 °C - 0.2 0.6 mA

Dynamic characteristi cs

Q

r

t

rr

V

FR

recovered charge IF=2A; VR=30V; dIF/dt = 20 A/µs;

reverse recovery time IF=1A; VR=30V; dIF/dt = 100 A/µs;

forward recovery
voltage

=8A; Tj= 150 °C; see Figure 4 - 0.72 0.85 V

I

F

=200V; Tj=25°C - 6 30 µA

V

R

-812.5nC

=25°C

T

j

-2025ns

ramp recovery; Tj= 25 °C; see Figure 5

= 0.5 A; IR= 1 A; step recovery;

I

F

-1020ns

measured at reverse current = 0.25 A;

=25°C; see Figure 6

T

j

IF=1A; dIF/dt = 10 A/µs; Tj= 25 °C; see

--1V

Figure 7

BYV32E-200_4 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 04 — 27 February 2009 4 of 9

NXP Semiconductors

3

BYV32E-200

Dual rugged ultrafast rectifier diode, 20 A, 200 V

32

I

F

(A)

24

16

8

0

0 1.61.20.4 0.8

(1) (2) (3)

003aac981

VF (V)

Fig 4. Forward current as a function of forward

voltage

I

F

dl

I

F

I

R

F

dt

t

rr

time

25 %

Q

r

I

RM

100 %

003aac562

Fig 5. Reverse recovery definitions; ramp recovery

I

F

I

F

Q

r

I

I

R

R

t

rr

time

0.25 x I

003aac56

Fig 6. Reverse recovery definitions; step recovery

R

V

F

Fig 7. Forward recovery definitions

V

F

time

V

time

001aab912

FRM

BYV32E-200_4 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 04 — 27 February 2009 5 of 9

NXP Semiconductors

Dual rugged ultrafast rectifier diode, 20 A, 200 V

7. Package outline

Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB

p

BYV32E-200

SOT78

AE

A

1

D

1

D

(1)

L

1

(2)

b

1

L

(3×)

(2)

b

2

(2×)

123

e

DIMENSIONS (mm are the original dimensions)

(2)

1.6

1.0

(2)

c D

b

1

2

1.3

0.7

0.4

16.0

15.2

REFERENCES

1.0

3-lead TO-220AB

UNIT A

4.7

mm

4.1

Notes

1. Lead shoulder designs may vary.

2. Dimension includes excess dambar.

OUTLINE
VERSION

SOT78 SC-46

A

1.40

1.25

b b

1

0.9

0.6

IEC JEDEC JEITA

q

(1)

L

2

b(3×)

e

0 5 10 mm

scale

D

E e

1

6.6

5.9

10.3

9.7

2.54

15.0

12.8

mounting

L L

base

1

3.30

2.79

Q

c

(1)

L

2

(1)

max.

3.0

p q

3.0

3.8

3.5

2.7

EUROPEAN

PROJECTION

Q

2.6

2.2

ISSUE DATE

08-04-23
08-06-13

Fig 8. Package outline SOT78 (TO-220AB)

BYV32E-200_4 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 04 — 27 February 2009 6 of 9

NXP Semiconductors

8. Revision history

BYV32E-200

Dual rugged ultrafast rectifier diode, 20 A, 200 V

Table 7. Revision history

Document ID Release date Data sheet status Change notice Supersedes

BYV32E-200_4 20090227 Product data sheet - BYV32E_SERIES_3
Modifications:

• The format of this data sheet has been redesigned to comply with the new identity

guidelines of NXP Semiconductors.

• Legal texts have been adapted to the new company name where appropriate.

• Package outline updated.

• Type number BYV32E-200 separated from data sheet BYV32E_SERIES_3

BYV32E_SERIES_3 20010301 Product specification - BYV32E_SERIES_2
BYV32E_SERIES_2 19980701 Product specification - BYV32EB_SERIES_1
BYV32EB_SERIES_1 19960801 Product specification - -

BYV32E-200_4 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 04 — 27 February 2009 7 of 9

NXP Semiconductors

BYV32E-200

Dual rugged ultrafast rectifier diode, 20 A, 200 V

9. Legal information

9.1 Data sheet status

Document status

Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.

[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product

status information is available on the Internet at URL http://www.nxp.com

[1][2]

Product status

[3]

Definition

.

9.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.

Short data sheet — A short data sheet is an extract from a full dat a sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied u pon to co nt ain det ailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.

9.3 Disclaimers

General — Information in this document is believed to be accurate and

reliable. However, NXP Semiconduct ors does not give any repr esentatio ns or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.

Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.

Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental

damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.

Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteri stics sections of this
document, and as such is not complete, exhaustive or legally binding.

Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.

Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.

No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell product s that is ope n for accept ance or the gr ant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.

, including those pertaining to warranty,

9.4 Trademarks

Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.

10. Contact information

For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [e-mail]

BYV32E-200_4 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 04 — 27 February 2009 8 of 9

NXP Semiconductors

11. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1

1.1 General description . . . . . . . . . . . . . . . . . . . . . .1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . .1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . .2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . .2

4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3

5 Thermal characteristics . . . . . . . . . . . . . . . . . . .4

6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .4

7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .6

8 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . .7

9 Legal information. . . . . . . . . . . . . . . . . . . . . . . . .8

9.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . .8

9.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8

9.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . .8

9.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . .8

10 Contact information. . . . . . . . . . . . . . . . . . . . . . .8

BYV32E-200

Dual rugged ultrafast rectifier diode, 20 A, 200 V

Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.

© NXP B.V. 2009. All rights reserved.

For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [e-mail]

Date of release: 27 February 2009

Document identifier: BYV32E-200_4