Datasheet BYV32EB-150, BYV32EB-100, BYV32E-100 Datasheet (Philips)

Philips Semiconductors Product specification

Rectifier diodes BYV32E, BYV32EB series
ultrafast, rugged

FEATURES SYMBOL QUICK REFERENCE DATA

• Low forward volt drop VR = 150 V/ 200 V

• Fast switching

• Soft recovery characteristic VF ≤ 0.85 V

• Reverse surge capability

• High thermal cycling performance I

O(AV)

= 20 A

• Low thermal resistance
I

RRM

= 0.2 A

trr ≤ 25 ns

GENERAL DESCRIPTION

Dual, ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power
supplies.

The BYV32E series is supplied in the SOT78 conventional leaded package.
The BYV32EB series is supplied in the SOT404 surface mounting package.

PINNING SOT78 (TO220AB) SOT404

PIN DESCRIPTION

1 anode 1 (a)
2 cathode (k)

1

3 anode 2 (a)

tab cathode (k)

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

BYV32E / BYV32EB -150 -200

V

RRM

Peaqk repetitive reverse - 150 200 V
voltage

V

RWM

Crest working reverse voltage - 150 200 V

V

R

Continuous reverse voltage - 150 200 V

I

O(AV)

Average rectified output current square wave; δ = 0.5; - 20 A
(both diodes conducting) Tmb ≤ 115 ˚C

I

FRM

Repetitive peak forward current t = 25 µs; δ = 0.5; - 20 A
per diode Tmb ≤ 115 ˚C

I

FSM

Non-repetitive peak forward t = 10 ms - 125 A
current per diode t = 8.3 ms - 137 A

sinusoidal; with reapplied
V

RWM(max)

I

RRM

Repetitive peak reverse current tp = 2 µs; δ = 0.001 - 0.2 A
per diode

I

RSM

Non-repetitive peak reverse tp = 100 µs - 0.2 A
current per diode

T

stg

Storage temperature -40 150 ˚C

T

j

Operating junction temperature - 150 ˚C

1 It is not possible to make connection to pin 2 of the SOT404 package

k

a1

a2

13

2

13

tab

2

123

tab

July 1998 1 Rev 1.200

Philips Semiconductors Product specification

Rectifier diodes BYV32E, BYV32EB series
ultrafast, rugged

ESD LIMITING VALUE

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

C

Electrostatic discharge Human body model; - 8 kV
capacitor voltage C = 250 pF; R = 1.5 kΩ

THERMAL RESISTANCES

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

R

th j-mb

Thermal resistance junction per diode - - 2.4 K/W
to mounting base both diodes - - 1.6 K/W

R

th j-a

Thermal resistance junction SOT78 package, in free air - 60 - K/W
to ambient SOT404 and SOT428 packages, pcb - 50 - K/W

mounted, minimum footprint, FR4 board

ELECTRICAL CHARACTERISTICS

characteristics are per diode at Tj = 25 ˚C unless otherwise stated

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

F

Forward voltage IF = 8 A; Tj = 150˚C - 0.72 0.85 V

IF = 20 A - 1.00 1.15 V

I

R

Reverse current VR = V

RWM

; Tj = 100 ˚C - 0.2 0.6 mA

VR = V

RWM

-630µA

Q

s

Reverse recovery charge IF = 2 A; VR ≥ 30 V; -dIF/dt = 20 A/µs - 8 12.5 nC

t

rr1

Reverse recovery time IF = 1 A; VR ≥ 30 V; - 20 25 ns

-dIF/dt = 100 A/µs

t

rr2

Reverse recovery time IF = 0.5 A to IR = 1 A; I

rec

= 0.25 A - 10 20 ns

V

fr

Forward recovery voltage IF = 1 A; dIF/dt = 10 A/µs-1-V

July 1998 2 Rev 1.200

Philips Semiconductors Product specification

Rectifier diodes BYV32E, BYV32EB series
ultrafast, rugged

Fig.1. Definition of t

rr1

, Qs and I

rrm

Fig.2. Definition of V

fr

Fig.3. Circuit schematic for t

rr2

Fig.4. Definition of t

rr2

Fig.5. Maximum forward dissipation PF = f(I

F(AV)

) per

diode; square current waveform where

I

F(AV)

=I

F(RMS)

x √D.

Fig.6. Maximum forward dissipation PF = f(I

F(AV)

) per

diode; sinusoidal current waveform where a = form

factor = I

F(RMS)

/ I

F(AV)

.

Q

s

100%

10%

time

dI
dt

F

I

R

I

F

I

rrm

t

rr

I = 1A

R

rec

I = 0.25A

0A

trr2

0.5A

IF

IR

time

time

V

F

V

fr

V

F

I

F

0 5 10 15

0

5

10

15

D = 1.0

0.5

0.2

0.1

BYV32

IF(AV) / A

PF / W

Tmb(max) / C

150

138

126

114

Vo = 0.7 V
Rs = 0.0183 Ohms

D =

t

p

t

p

T

T

t

I

shunt

Current

to ’scope

D.U.T.

Voltage Pulse Source

R

0246810

0

2

4

6

8

10

1.9

2.2

2.8

4

BYV32

IF(AV) / A

PF / W

a = 1.57

Tmb(max) / C

150

145.2

140.4

135.6

130.8

126

Vo = 0.7 V
Rs = 0.0183 Ohms

July 1998 3 Rev 1.200

Philips Semiconductors Product specification

Rectifier diodes BYV32E, BYV32EB series
ultrafast, rugged

Fig.7. Maximum trr at Tj = 25 ˚C; per diode

Fig.8. Maximum I

rrm

at Tj = 25 ˚C; per diode

Fig.9. Typical and maximum forward characteristic

per diode; IF = f(VF); parameter T

j

Fig.10. Maximum Qs at Tj = 25 ˚C; per diode

Fig.11. Transient thermal impedance; per diode;

Z

th j-mb

= f(tp).

1

10

trr / ns

1 10 100

1000

100

dIF/dt (A/us)

IF=1A

IF=10A

10

1.0

1.0 10 100

-dIF/dt (A/us)

Qs / nC

IF=10A

5A
2A
1A

100

10

1

0.1

0.01

Irrm / A

1

10 100

-dIF/dt (A/us)

IF=1A

IF=10A

1us 10us 100us 1ms 10ms 100ms 1s 10s

0.001

0.01

0.1

1

10

BYV32E

pulse width, tp (s)

Transient thermal impedance, Zth j-mb (K/W)

D =

t

p

t

p

T

T

P

t

D

0 1

30

20

10

0

0.5 1.5
VF / V

IF / A

typ

max

Tj=150 C
Tj=25 C

July 1998 4 Rev 1.200

Philips Semiconductors Product specification

Rectifier diodes BYV32E, BYV32EB series
ultrafast, rugged

MECHANICAL DATA

Dimensions in mm
Net Mass: 2 g

Fig.12. SOT78 (TO220AB); pin 2 connected to mounting base.

Notes

1. Refer to mounting instructions for SOT78 (TO220) envelopes.

2. Epoxy meets UL94 V0 at 1/8".

10,3
max

3,7

2,8

3,0

3,0 max

not tinned

1,3

max

(2x)

123

2,4

0,6

4,5
max

5,9

min

15,8

max

1,3

2,54 2,54

0,9 max (3x)

13,5

min

July 1998 5 Rev 1.200

Philips Semiconductors Product specification

Rectifier diodes BYV32E, BYV32EB series
ultrafast, rugged

MECHANICAL DATA

Dimensions in mm
Net Mass: 1.4 g

Fig.13. SOT404 : centre pin connected to mounting base.

MOUNTING INSTRUCTIONS

Dimensions in mm

Fig.14. SOT404 : soldering pattern for surface mounting

.

Notes

1. Epoxy meets UL94 V0 at 1/8".

11 max

4.5 max

1.4 max

10.3 max

0.5

15.4

2.5

0.85 max
(x2)

2.54 (x2)

17.5

11.5

9.0

5.08

3.8

2.0

July 1998 6 Rev 1.200

Philips Semiconductors Product specification

Rectifier diodes BYV32E, BYV32EB series
ultrafast, rugged

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

 Philips Electronics N.V. 1998

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.

The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.

July 1998 7 Rev 1.200