Datasheet BYV26B-TAP Specification

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949539

Ultra-Fast Avalanche Sinterglass Diode

BYV26A, BYV26B, BYV26C, BYV26D, BYV26E

Vishay Semiconductors

FEATURES

• Glass passivated junction

• Hermetically sealed package

• Very low switching losses

• Low reverse current

• High reverse voltage

• Material categorization:
For definitions of compliance please see

www.vishay.com/doc?99912

MECHANICAL DATA

Case: SOD-57

Terminals: plated axial leads, solderable per MIL-STD-750,

method 2026

APPLICATIONS

• Switched mode power supplies

• High-frequency inverter circuits



Polarity: color band denotes cathode end

Mounting position: any

Weight: approx. 369 mg




ORDERING INFORMATION (Example)

DEVICE NAME ORDERING CODE TAPED UNITS MINIMUM ORDER QUANTITY

BYV26E BYV26E-TR 5000 per 10" tape and reel 25 000

BYV26E BYV26E-TAP 5000 per ammopack 25 000

PARTS TABLE

PART TYPE DIFFERENTIATION PACKAGE

BYV26A V

BYV26B V

BYV26C V

BYV26D V

BYV26E V

ABSOLUTE MAXIMUM RATINGS (T

PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT

Reverse voltage = repetitive peak reverse
voltage

Peak forward surge current t

Average forward current I

Non repetitive reverse avalanche energy I

Junction and storage temperature range T

= 200 V; I

R

= 400 V; I

R

= 600 V; I

R

= 800 V; I

R

= 1000 V; I

R

= 25 °C, unless otherwise specified)

amb

= 1 A SOD-57

F(AV)

= 1 A SOD-57

F(AV)

= 1 A SOD-57

F(AV)

= 1 A SOD-57

F(AV)

= 1 A SOD-57

F(AV)

BYV26A V

BYV26B V

See electrical characteristics

BYV26C V

BYV26D V

BYV26E V

= 10 ms, half sine wave I

p

= 1 A, inductive load E

(BR)R

R

R

R

R

R

= V

= V

= V

= V

= V

FSM

F(AV)

= T

j

RRM

RRM

RRM

RRM

RRM

R

- 55 to + 175 °C

stg

200 V

400 V

600 V

800 V

1000 V

30 A

1A

10 mJ

MAXIMUM THERMAL RESISTANCE (T

= 25 °C, unless otherwise specified)

amb

PARAMETER TEST CONDITION SYMBOL VALUE UNIT

Junction ambient l = 10 mm, T

Rev. 1.8, 04-Sep-12

For technical questions within your region: [e-mail]

= constant R

L

1

, [e-mail], [e-mail]

thJA

45 K/W

Document Number: 86040

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

www.vishay.com

04080120160

0

100

200

300

400

600

P

R

- Max. Reverse Power Dissipation (mW)

Tj - Junction Temperature (°C)

200

959728

500

VR = V

RRM

200 V

1000 V

400 V

600 V

800 V

R

thJA

= 45 K/W

R

thJA

= 100 K/W

04080120160

200

959729

1

10

100

1000

I

R

- Reverse Current (μA)

Tj - Junction Temperature (°C)

VR = V

RRM

0.1

BYV26A, BYV26B, BYV26C, BYV26D, BYV26E

Vishay Semiconductors

ELECTRICAL CHARACTERISTICS (T

= 25 °C, unless otherwise specified)

amb

PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT

I

Forward voltage

Reverse current

V

Reverse breakdown voltage I

Reverse recovery time I

= 0.5 A, IR = 1 A, iR = 0.25 A

F

TYPICAL CHARACTERISTICS (T

= 1 A V

F

= 1 A, Tj = 175 °C V

I

F

V

= V

R

RRM

= V

R

, Tj = 150 °C I

RRM

BYV26A V

BYV26B V

= 100 μA

R

BYV26C V

BYV26D V

BYV26E V

BYV26A t

BYV26B t

BYV26C t

BYV26D t

BYV26E t

= 25 C, unless otherwise specified)

amb

1.2

1.0

0.8

F

F

I

R

R

(BR)R

(BR)R

(BR)R

(BR)R

(BR)R

rr

rr

rr

rr

rr

--2.5V

--1.3V

--5μA

- - 100 μA

300 - - V

500 - - V

700 - - V

900 - - V

1100 - - V

- - 30 ns

- - 30 ns

- - 30 ns

- - 75 ns

- - 75 ns

R

= 45 K/W

thJA

Fig. 1 - Max. Reverse Power Dissipation vs. Junction Temperature

Rev. 1.8, 04-Sep-12

Fig. 2 - Max. Reverse Current vs. Junction Temperature

For technical questions within your region: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

0.6

0.4

0.2

- Average Forward Current (A)

FAV

I

959730

R

= 100 K/W

thJA

0

04080120160

T

- Ambient Temperature (°C)

amb

Fig. 3 - Max. Average Forward Current vs. Ambient Temperature

10

Tj = 175 °C

1

= 25 °C

T

j

10234567

VF - Forward Voltage (V)

0.1

0.01

- Forward Current (A)

F

I

0.001

959731

Fig. 4 - Max. Reverse Current vs. Junction Temperature

2

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

, [e-mail], [e-mail]

200

Document Number: 86040

BYV26A, BYV26B, BYV26C, BYV26D, BYV26E

0

5

10

15

20

25

30

35

40

16380

f = 1 MHz

BYV26C

0.1 1 10 100

VR - Reverse Voltage (V)

C

D

- DiodeCapacitance (pF)

16381

f = 1 MHz

BYV26E

0

5

10

15

20

25

30

35

40

0.1 1 10 100

VR - Reverse Voltage (V)

C

D

- Diode Capacitance (pF)

20543

3.6 (0.142) max.

26 (1.024) min.

4 (0.157) max.

26 (1.024) min.

0.82 (0.032) max.

www.vishay.com

Fig. 5 - Diode Capacitance vs. Reverse Voltage Fig. 6 - Diode Capacitance vs. Reverse Voltage

PACKAGE DIMENSIONS in millimeters (inches): SOD-57

Vishay Semiconductors

Rev. 1.8, 04-Sep-12

For technical questions within your region: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

3

, [e-mail], [e-mail]

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Document Number: 86040

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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
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Revision: 02-Oct-12

1

Document Number: 91000