Datasheet BYV10-60 Datasheet (SGS Thomson Microelectronics)

®

SMALL SIGNAL SC HO TTKY DIODE

DESCRIPTION

Metal to silicon rectifier diode in glass case featu­ring very low forward voltage drop and fast recovery
time, intended for low voltage switching mode
power supply, polarity protection and high fre­quency circuits.

BYV 10-60

DO 41

(Glass)

ABSOLUTE RATINGS

(limiting values)

Symbol Parameter Value Unit

V

RRM

I

F(AV)

I

FSM

T

stg

T

T

L

Repetitive Peak Reverse Voltage 60 V
Average Forward Current*
Surge non Repetitive Forward Current

= 25

T

amb

= 25°C

T

amb

= 10ms

t

p

= 25°C

T

amb

= 300µs

t

p

C

°

Rectangular Pulse

1A

20

Sinusoidal Pulse

40

Storage and Junction Temperature Range - 65 to + 150

j

Maximum Lead Temperature for Soldering during 10s at 4mm

- 65 to + 125
230

from Case

THERMAL RESISTANCE

Symbol Test Conditions Value Unit

R

th(j-a)

* On infinite heatsink with 4mm lead length

Junction-ambient* 110

C/W

°

A

C

°

C

°

C

°

August 1999 Ed: 1A

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BYV 10-60

ELECTRICAL CHARACT E RISTI CS

ST ATIC CHARACTERISTICS

Symbol Test Conditions Min. Typ. Max. Unit

*

I

R

VF *I

= 25°C

T

j

= 100°C

T

j

= 1A

F

I

= 3A 1

F

V

= V

R

= 25°C

T

j

RRM

0.5 mA
10

0.7 V

DYNAMIC CHARACT ERIS TICS

Symbol Test Conditions Min. Typ. Max. Unit

C

* Pulse test: t

= 25°C VR = 0

T

j

T

= 25°C VR = 5V

j

300µs δ < 2%

≤

p

.

Forward current flow in a schottky rectifier is due to
majority carrier conduction. So reverse recovery is
not affected by stored charge as in c onventional PN
junction diodes.

Nevertheless, when the device switches from for­ward biased condition to reverse blocking state,

This current depends only of diode capacitance and
external circuit impedance. Satisfactory circuit be­haviour analysis may be performed assuming that
schottky rectifier consists of an ideal diode in paral­lel with a variable capacitance equal to the junction
capacitance (see fig. 5 page 4/4).

150 pF

40

current is required to charge the depletion capaci­tance of the diode.

Figure 1. Forward current versus forward
voltage at low level (typical values).

Figure 2. Forward current versus forward
voltage at high level (typical values).

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BYV 10-60

Figure 3. Reverse current versus junction
temperature.

Figure 4. Reverse current versus V
cent.

RRM

in per

Figure 5. Capacitance C versus reverse
applied voltage V

(typical values).

R

Figure 6. Surge non repetitive forward current
for a rectangular pulse with t ≤ 10 ms.

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BYV 10-60

Figure 7. Surge non repetitive forward current
versus number of cycles.

PACKAGE MECHANICAL DATA

DO 41 Glass

BA B

note 1

E

/

O

D

note 2

E

note 1

O

/

D

/

O

C

DIMENSIONS

REF.

Millimeters Inches

Min. Max. Min. Max.

A 4.07 5.20 0.160 0.205

B 2.04 2.71 0.080 0.107
C28 1.102
D 0.712 0.863 0.028 0.034

Cooling method : by convection and conduction
Marking: clear, ring at cathode end.
Weight: 0.34g

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