Page 1
Vishay Telefunken
g
Ultra Fast Recovery Silicon Power Rectifier
Features
D
Multiple diffusion
D
High voltage
D
High current
D
Ultra fast forward recovery time
D
Ultra fast reverse recovery time
Applications
Fast rectifiers in S.M.P.S, freewheeling and snubber
diode in motor control circuits
BYT85
14282
Absolute Maximum Ratings
Tj = 25_C
Parameter Test Conditions Type Symbol Value Unit
Reverse voltage BYT85–600 VR=V
=Repetitive peak reverse voltage
Peak forward surge current 10ms
half sinewave
Repetitive peak forward current I
Average forward current I
Junction and storage temperature range Tj=T
BYT85–800 VR=V
BYT85–1000 VR=V
I
Maximum Thermal Resistance
Tj = 25_C
Parameter Test Conditions Symbol Value Unit
Junction case R
thJC
FSM
FRM
FAV
RRM
RRM
RRM
–55...+150°C
stg
3 K/W
600 V
800 V
1000 V
80 A
20 A
4 A
Document Number 86035
Rev. 2, 24-Jun-98
www.vishay.de • FaxBack +1-408-970-5600
1 (4)
Page 2
BYT85
g
F
,
F
m
y
F F
m
Vishay Telefunken
Electrical Characteristics
Tj = 25_C
Parameter Test Conditions Type Symbol Min Typ Max Unit
Forward voltage IF=4A V
IF=4A, Tj=100°C V
Reverse current VR=V
Forward recovery time
Turn on transient peak voltage
Reverse recovery characteristics IF=4A, diF/dt=–100A/ms, I
Reverse recovery time IF=4A, diF/dt=–100A/ms,
Characteristics (Tj = 25_C unless otherwise specified)
RRM
VR=V
I
=4A, di
V
Batt
V
Batt
, Tj=100°C I
RRM
/dtx50A/ms
=200V
=200V
IF=0.5A, IR=1A, iR=0.25A t
I
t
V
RM
t
IRM
t
R
R
fr
FP
rr
rr
F
F
1.8 V
1.8 V
10
m
A
0.1 mA
350 ns
5 V
7 A
70 ns
125 ns
80 ns
1000
VR=V
m
R
I – Reverse Current ( A )
94 9477
100
10
1
0.1
0 40 80 120 160
RRM
T
– Junction Temperature ( °C )
j
200
Figure 1. Typ. Reverse Current vs. Junction Temperature
6
5
4
R
=3K/W
3
R
=5K/W
thJA
R
2
R
1
FAV
I – Average Forward Current ( A )
0
0
=10K/W
thJA
=85K/W
thJA
40 80 120 160
T
– Ambient Temperature ( °C )94 9475
amb
thJC
200
Figure 2. Max. Average Forward Current vs.
Ambient Temperature
100
T
=25°C
Case
10
1
F
0.1
I – Forward Current ( A )
94 9476
0.01
0 0.6 1.2 1.8 2.4
VF – Forward Voltage ( V )
3.0
Figure 3. Typ. Forward Current vs. Forward Voltage
150
RM
120
90
60
IF=4A
T
30
IRM
t – Reverse Recovery Time for I ( ns )
0
0 50 100 150
94 9480
–dIF/dt – Forward Current Rate of Change ( A/ms )
=25°C
C
V
=200V
Batt
200
Figure 4. Reverse Recovery Time for IRM vs.
Forward Current Rate of Change
www.vishay.de • FaxBack +1-408-970-5600
Document Number 86035
Rev. 2, 24-Jun-982 (4)
Page 3
BYT85
Vishay Telefunken
15
12
9
6
3
RM
I – Reverse Recovery Current ( A )
0
0 50 100 150
94 9478
–dIF/dt – Forward Current Rate of Change ( A/ms )
T
V
Batt
IF=4A
C
Figure 5. Reverse Recovery Current vs.
Forward Current Rate of Change
Dimensions in mm
=25°C
=200V
200
250
200
150
100
50
rr
t – Reverse Recovery Time ( ns )
0
94 9479 –dI
IF=4A
T
=25°C
C
V
=200V
Batt
0 50 100 150
/dt – Forward Current Rate of Change ( A/ms )
F
Figure 6. Reverse Recovery Time vs.
Forward Current Rate of Change
200
Document Number 86035
Rev. 2, 24-Jun-98
14276
www.vishay.de • FaxBack +1-408-970-5600
3 (4)
Page 4
BYT85
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. V arious national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly , any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
www.vishay.de • FaxBack +1-408-970-5600
Document Number 86035
Rev. 2, 24-Jun-984 (4)
Loading...