Datasheet BYT60P-400, BYT261PIV-400, BYT260PIV-400 Datasheet (SGS Thomson Microelectronics)

BYT60P-400



BYT260PIV-400 / BYT261PIV-400

FAST RECOVERY RECTIFIER DIODES

MAIN PRODUCT CHARACTERISTICS

I

F(AV)

V

RRM

VF(max) 1.4 V
trr (max) 50 ns

FEATURES ANDBENEFITS

n VERY LOW REVERSE RECOVERY TIME
n VERY LOW SWITCHING LOSSES
n LOW NOISE TURN-OFF SWITCHING
n INSULATED PACKAGE: ISOTOP

Insulation voltage: 2500 V
Capacitance = 45 pF
Inductance < 5nH

2 x 60 A

400 V

RMS

K2 A2

A1K1

BYT261PIV-400

ISOTOP

(Plastic)

A2 K1

A1K2

BYT260PIV-400

TM

DESCRIPTION

These rectifierdevicesaresuited for free-wheeling
function in converters and motor controlcircuits.

Packaged in ISOTOP or SOD93, they are
intended for use in Switch Mode Power Supplies.

A

K

SOD93

(Plastic)

ABSOLUTE RATINGS (limiting values, per diode)

Symbol Parameter Value Unit

V

RRM

I

FRM

I

F(RMS)

I

F(AV)

Repetitive peakreverse voltage
Repetitive peakforward current tp=5 µs F=1kHz
RMS forward current ISOTOP

SOD93

Average forward current δ = 0.5 Tc = 70°C ISOTOP

400 V

1000 A

140 A
100

60 A

Tc = 80°C SOD93

I

FSM

T

Tj

stg

Surge non repetitive forward current
tp = 10 ms Sinusoidal

Storage temperaturerange
Maximum operating junction temperature

ISOTOP
SOD93

600 A
550

- 40 to + 150 °C
150 °C

TM: ISOTOP is aregistered trademark of STMicroelectronics.

May 2000 - Ed: 4D

1/7

BYT60P-400 / BYT260PIV-400 / BYT261PIV-400

THERMAL RESISTANCES

Symbol Parameter Value Unit

R

th(j-c)

Junction to case ISOTOP Per diode

Total

SOD93 Total

R

th(c)

Coupling

When the diodes 1 and 2 are used simultaneously :
∆ Tj(diode 1)= P(diode) x R

(Per diode) + P(diode 2) x R

th(j-c)

th(c)

STATIC ELECTRICAL CHARACTERISTICS (per diode)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

VF*

Forward voltage drop Tj = 25°CI

=60A

F

Tj = 100°C

IR**

Pulse test : * tp = 380 µs, δ <2%

Reverse leakage cur­rent

** tp = 5 ms, δ <2%

Tj = 25°CV

R=VRRM

Tj = 100°C

0.8

°C/W

0.45

0.7

0.1 °C/W

1.5 V

1.4
60 µA

6mA

To evaluatethe conduction losses use the following equation:
P = 1.1 x I

F(AV)

+0.0045 I

F2(RMS)

RECOVERY CHARACTERISTICS (per diode)

Symbol Test Conditions Min. Typ. Max. Unit

t

rr

Tj = 25°CIF=1A VR= 30V dIF/dt = - 15A/µs

IF= 0.5A IR=1A Irr= 0.25A

100 ns

50

TURN-OFF SWITCHING CHARACTERISTICS

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

C=

IRM

I

RM

V
V

Maximum reverse
recovery time

Maximum reverse
recovery current

Turn-off overvol t age

RP

coeff icient

CC

dIF/dt = - 240 A/µsV
dIF/dt = - 480 A/µs
dIF/dt = - 240 A/µs
dIF/dt = - 480 A/µs

= 200 V

CC

IF=60A
Lp0.05 µH
Tj = 100°C
(see fig. 13)

Tj = 100°CVCC= 120V IF=I
dIF/dt = - 60A/µsLp= 0.8µH
(see fig. 14)

F(AV)

75 ns

50

18 A

24

3.3 4 /

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BYT60P-400 / BYT260PIV-400 / BYT261PIV-400

Fig. 1: Average forward power dissipation versus
average forward current (per diode, for ISOTOP).

PF(av)(W)

110
100

90
80
70

δ = 0.2

δ= 0.1

δ = 0.05

δ= 0.5

δ =1

60
50
40
30

T

20
10

0

0 1020304050607080

IF(av)(A)

=tp/T tp

δ

Fig. 3: Average forward current versus ambient
temperature (δ=0.5, per diode for ISOTOP).

IF(av)(A)

70
60
50
40
30
20
10

0

0 25 50 75 100 125 150

δ

=tp/T

Rth(j-a)=Rth(j-c)

Rth(j-a)=2.5°C/W

T

tp

Fig. 2: Peak current versus form factor (per diode,
for ISOTOP).

IM(A)

350

ISOTOP

Tamb(°C)

300
250
200
150
100

50

0

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

SOD93

P=50W

P=75W

P=25W

P=100W

δ

δ

=tp/T

T

tp

Fig. 4-1:Non repetitivesurge peak forward current
versus overload duration (SOD93).

IM(A)

450
400
350
300
250
200
150

IM

100

50

0

1E-3 1E-2 1E-1 1E+0

δ=0.5

t

Tc=50°C

Tc=25°C

Tc=75°C

t(s)

Fig. 4-2: Non repetitivesurge peak forward current

versus overload duration (per diode, for ISOTOP).

IM(A)

400
350
300
250
200
150
100

IM

50

0

1E-3 1E-2 1E-1 1E+0

δ=0.5

t

Tc=50°C

Tc=25°C

Tc=75°C

t(s)

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BYT60P-400 / BYT260PIV-400 / BYT261PIV-400

Fig. 5-1: Relative variation of thermal impedance

junction to case versus pulse duration (per diode
for ISOTOP).

K=[Zth(j-c)/Rth(j-c)]

1.0

δ = 0.5

0.5

δ =0.2

δ = 0.1

0.2

Single pulse

tp(s)

0.1
1E-3 1E-2 1E-1 1E+0

T

=tp/T tp

δ

Fig. 6: Forward voltage drop versus forward
current (maximum values, per diode for ISOTOP).

IFM(A)

500

Typicalvalues

Tj=100°C

100

Tj=25°C

10

1

0.0 0.5 1.0 1.5 2.0 2.5 3.0

Tj=100°C

VFM(V)

Fig. 5-2: Relative variation of thermal impedance

junction to case versus pulse duration (SOD93).

K=[Zth(j-c)/Rth(j-c)]

1.0

δ = 0.5

0.5

δ = 0.2

δ = 0.1

0.2

Single pulse

tp(s)

0.1
1E-3 1E-2 1E-1 1E+0

T

=tp/T tp

δ

Fig. 7: Junction capacitance versus reverse
voltage applied (typical values, per diode for
ISOTOP).

C(pF)

200
180
160
140
120
100

80
60

1 10 100 200

VR(V)

F=1MHz
Tj=25°C

Fig. 8: Recovery charges versus dIF/dt (per diode
for ISOTOP).

Qrr(µC)

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

4/7

IF=IF(av)

90% confidence

Tj=100°C

dIF/dt(A/µs)

10 20 50 100 200 500

Fig. 9: Recovery current versus dIF/dt (per diode
for ISOTOP).

IRM(A)

50

IF=IF(av)

90% confidence

Tj=100°C

10

1

10 20 50 100 200 500

dIF/dt(A/µs)

BYT60P-400 / BYT260PIV-400 / BYT261PIV-400

Fig. 10: Transient peak forward voltage versus

dIF/dt (per diode for ISOTOP).

VFP(V)

30

IF=IF(av)

90% confidence

Tj=100°C

25
20
15
10

5
0

0 100 200 300 400 500

dIF/dt(A/µs)

Fig. 12: Dynamic parameters versus junction

temperature.

Qrr;IRM[Tj] / Qrr;IRM[Tj=100°C]

1.50

1.25

Fig. 11: Forward recovery time versus dIF/dt (per
diode for ISOTOP).

tfr(µs)

1.50

1.25

1.00

0.75

0.50

0.25

0.00

0 100 200 300 400 500

dIF/dt(A/µs)

IF=IF(av)

90% confidence

Tj=100°C

1.00

0.75

0.50

0.25
0 25 50 75 100 125 150

IRM

Qrr

Fig. 13: Turn-off switching characteristics (without
serie inductance).

IF

DUT

LC

VCC

VF

IRM

diF/dt

VCC

tIRM

Tj(°C)

Fig. 14: Turn-off switching characteristics (with

serie inductance).

IF

LC

DUT

LP

VCC

VF

VRP

diF/dt

VCC

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BYT60P-400 / BYT260PIV-400 / BYT261PIV-400

PACKAGE MECHANICAL DATA

ISOTOP

DIMENSIONS

REF.

Millimeters Inches

Min. Max. Min. Max.

A 11.80 12.20 0.465 0.480

A1 8.90 9.10 0.350 0.358

B 7.8 8.20 0.307 0.323
C 0.75 0.85 0.030 0.033

C2 1.95 2.05 0.077 0.081

D 37.80 38.20 1.488 1.504

D1 31.50 31.70 1.240 1.248

E 25.15 25.50 0.990 1.004
E1 23.85 24.15 0.939 0.951
E2 24.80 typ. 0.976 typ.

G 14.90 15.10 0.587 0.594

G1 12.60 12.80 0.496 0.504
G2 3.50 4.30 0.138 0.169

F 4.10 4.30 0.161 0.169
F1 4.60 5.00 0.181 0.197

P 4.00 4.30 0.157 0.69

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PACKAGE MECHANICAL DATA

SOD93 Plastic

BYT60P-400 / BYT260PIV-400 / BYT261PIV-400

DIMENSIONS

REF.

A 4.70 4.90 0.185 0.193
C 1.17 1.37 0.046 0.054
D 2.50 0.098

D1 1.27 0.050

E 0.50 0.78 0.020 0.031

F 1.10 1.30 0.043 0.051

F3 1.75 0.069

G 10.80 11.10 0.425 0.437
H 14.70 15.20 0.578 0.598

L 12.20 0.480
L2 16.20 0.638
L3 18.0 0.709
L5 3.95 4.15 0.156 0.163
L6 31.00 1.220

O 4.00 4.10 0.157 0.161

Millimeters Inches

Min. Typ. Max. Min. Typ. Max.

Ordering type Marking Package Weight Base qty

Delivery

mode

BYT60P-400 BYT60P-400 SOD93 3.79 g. 30 Tube
BYT260PIV-400 BYT260PIV-400 ISOTOP 28 g. (without screws) 10 Tube
BYT261PIV-400 BYT261PIV-400 ISOTOP 28 g. (without screws) 10 Tube

n Cooling method: by conduction (C)
n Recommended torque value (ISOTOP): 1.3 N.m (MAX 1.5 N.m) for the 6 x M4 screws. (2 x M4 screws

recommended for mounting the package on the heatsink and the 4 screws given with the screw ver­sion).The screws supplied with the package are adapted for mounting on a board (or other types of
terminals) with a thickness of 0.6 mm min and 2.2 mm max.

n Recommended torque value (SOD93): 0.8 N.m.
n Maximum torque value (SOD93): 1.0 N.m.
n Epoxy meets UL94,V0

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change withoutnotice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap­proval of STMicroelectronics.

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