Datasheet BYT60P-1000, BYT261PIV-1000 Datasheet (SGS Thomson Microelectronics)

BYT60P-1000



FAST RECOVERY RECTIFIERDIODES

MAJORPRODUCT CHARACTERISTICS

I

F(AV)

V

RRM

(max) 1.8 V

V

F

trr(max) 70 ns

FEATURESAND BENEFITS

VERYLOWREVERSERECOVERYTIME
VERYLOWSWITCHINGLOSSES
LOWNOISETURN-OFF SWITCHING
INSULATEDPACKAGE: ISOTOP

Insulationvoltage:2500V
Capacitance= 45pF
Inductance< 5 nH

DESCRIPTION

2 x 60 A

1000 V

RMS

BYT261PIV-1000

K2 A2

A1K1

BYT261PIV-1000

ISOTOP

(Plastic)

TM

Dual or highsinglevoltage rectifier devices suited
for Switch Mode Power Supplies and other power
converters.

These devices are packaged in ISOTOP or in
SOD93.

A

K

SOD93

(Plastic)

ABSOLUTE RATINGS

(limitingvalues,per diode)

Symbol Parameter Value Unit

V

RRM

I

FRM

I

F(RMS)

I

F(AV)

I

FSM

T

stg

Tj

Repetitivepeak reversevoltage
Repetitivepeak forwardcurrent tp=5µs F=1kHz
RMSforward current ISOTOP

SOD93

Averageforwardcurrent δ =0.5 Tc= 50°C ISOTOP

Tc= 60°C SOD93
Surgenon repetitiveforwardcurrent tp = 10ms Sinusoidal
Storagetemperaturerange
Maximumoperating junctiontemperature

1000 V
1000 A

140 A
100

60 A
60

400 A

- 40 to + 150 °C
150 °C

TM: ISOTOP is a registeredtrademark of STMicroelectronics.

October 1999 - Ed: 4B

1/7

BYT60P-1000 / BYT261PIV-1000

THERMAL RESISTANCES

Symbol Parameter Value Unit

R

R

th(j-c)

th(c)

Junctionto case ISOTOP Per diode

Total

SOD93 Total

Coupling

0.8

0.45

0.7

0.1 °C/W

Whenthe diodes1 and 2 are usedsimultaneously:
∆ Tj(diode1) = P(diode)x R

(Perdiode) + P(diode2) x R

th(j-c)

th(c)

STATICELECTRICAL CHARACTERISTICS(per diode)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

*

F

I

R

Forward voltagedrop Tj = 25°CI

**

Reverseleakage
current

Pulse test : * tp = 380µs,δ<2%

** tp = 5 ms,δ<2%

=60A

F

Tj = 100°C
Tj = 25°CV

R=VRRM

Tj = 100°C

1.9 V

1.8

100 µA

°C/W

6mA

To evaluatethe conductionlossesuse the following equation:
P = 1.47 x I

F(AV)

+0.005 I

F2(RMS)

RECOVERYCHARACTERISTICS(per diode)

Symbol Test Conditions Min. Typ. Max. Unit

t

rr

Tj=25°CIF=1A VR=30V dIF/dt = - 15A/µs

I

= 0.5A IR=1A Irr=0.25A

F

170 ns

70

TURN-OFFSWITCHINGCHARACTERISTICS

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

C=

IRM

I

RM

V

V

Max imu m rev er se
reco ve ry time

Max imu m rev er se
reco ve ry curr ent

Turn-off overvoltage

RP

coefficient

CC

dIF/dt = - 240 A/µsV

/dt = - 480 A/µs

dI

F

dIF/dt = - 240 A/µs
dI

/dt = - 480 A/µs

F

= 200V

CC

I

=60A

F

≤0.05 µH

L

p

Tj = 100°C
(seefig. 13)

Tj = 100°CVCC= 200V IF=I
dIF/dt = - 60A/µsLp= 2.5µH
(see fig. 14)

F(AV)

200 ns

120

40 A

44

3.3 4.5 /

2/7

BYT60P-1000 / BYT261PIV-1000

Fig. 1-1: Average forward power dissipation

versus average forward current (per diode,
ISOTOP).

PF(av)(W)

130
120
110

δ = 0.05

δ = 0.2δ = 0.1

δ= 0.5

100

90

δ =1

80
70
60
50
40
30
20
10

0

0 10203040506070

Fig. 2-1:

Peak current versus form factor (per

IF(av)(A)

δ

=tp/T

T

tp

diode,ISOTOP).

IM(A)

500
450
400
350

P=70W

300
250
200
150

P=40W

P=100W

100

P=20W

50

0

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

δ

δ

=tp/T

T

tp

Fig. 1-2: Average forward power dissipation
versusaverageforward current(SOD93).

PF(av)(W)

130
120
110

δ = 0.1

δ = 0.2

100

90
80

δ = 0.05

70
60
50
40
30
20
10

0

0 10203040506070

Fig.2-2:

500
450
400
350
300
250
200
150
100

50

0

Peakcurrentversusformfactor(SOD93).

IM(A)

P=70W

P=40W

P=20W

δ

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

IF(av)(A)

P=100W

δ= 0.5

δ

δ

=tp/T

=tp/T

δ =1

T

tp

T

tp

Fig. 3:

Average forward current versus ambient

temperature(δ=0.5, per diodefor ISOTOP).

IF(av)(A)

70

Rth(j-a)=Rth(j-c)

60
50

ISOTOP

40
30
20
10

=tp/T

δ

0

0 25 50 75 100 125 150

Rth(j-a)=2.5°C/W

T

tp

SOD93

Tamb(°C)

3/7

BYT60P-1000 / BYT261PIV-1000

Fig. 4-1:

Nonrepetitivesurgepeak forwardcurrent

versusoverloadduration (SOD93).

IM(A)

400
350
300
250
200

Tc=25°C

150
100

IM

50

0

1E-3 1E-2 1E-1 1E+0

δ=0.5

t

t(s)

Tc=60°C

Fig. 5-1: Relative variation of thermal impedance
junction to case versus pulse duration (per diode,
ISOTOP).

K=[Zth(j-c)/Rth(j-c)]

1.0

Fig.4-2:

Nonrepetitivesurgepeak forwardcurrent

versusoverloadduration (per diode,ISOTOP).

IM(A)

400
350
300
250
200

Tc=25°C

150
100

IM

50

0

1E-3 1E-2 1E-1 1E+0

δ=0.5

t

t(s)

Tc=50°C

Fig. 5-2: Relative variation of thermal impedance
junctionto caseversus pulseduration(SOD93).

K=[Zth(j-c)/Rth(j-c)]

1.0

δ = 0.5

0.5

δ = 0.2

δ

=tp/T

T

tp

δ = 0.1

0.2

Single pulse

0.1
1E-3 1E-2 1E-1 1E+0

tp(s)

Fig. 6: Forward voltage drop versus forward

current(maximum values,per diodefor ISOTOP).

IFM(A)

500

Typicalvalues

100

10

1

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

Tj=100°C

Tj=25°C

Tj=100°C

VFM(V)

δ = 0.5

0.5

δ = 0.2

δ= 0.1

0.2

Single pulse

tp(s)

0.1
1E-3 1E-2 1E-1 1E+0

δ

=tp/T

T

tp

Fig.7: Junctioncapacitanceversusreversevoltage
applied(typicalvalues,perdiodeforISOTOP).

C(pF)

100

80

60

40

20

VR(V)

0

1 10 100 200

F=1MHz

Tj=25°C

4/7

BYT60P-1000 / BYT261PIV-1000

Fig. 8:

Recoverycharges versus dI

/dt (per diode

F

forISOTOP).

Qrr(µC)

10

8

IF=IF(av)

90% confidence

Tj=100°C

6

4

2

dIF/dt(A/µs)

0

10 20 50 100 200 500

Fig. 10: Transient peak forward voltage versus
dI

/dt (perdiode for ISOTOP).

F

VFP(V)

45

IF=IF(av)

90% confidence

40

Tj=100°C

35
30
25
20
15
10

5
0

0 100 200 300 400 500

dIF/dt(A/µs)

Fig. 9:

Recovery current versus dI

/dt (per diode

F

for ISOTOP).

IRM(A)

80

IF=IF(av)

90% confidence

70

Tj=100°C

60
50
40
30
20
10

0

10 20 50 100 200 500

Fig. 11:

Forward recovery time versus dI

dIF/dt(A/µs)

/dt (per

F

diodefor ISOTOP).

tfr(µs)

1.50

1.25

1.00

0.75

0.50

0.25

dIF/dt(A/µs)

0.00

0 100 200 300 400 500

IF=IF(av)

90% confidence

Tj=100°C

Fig. 12: Dynamic parameters versus junction
temperature.

Qrr;IRM[Tj] / Qrr;IRM[Tj=100°C]

1.50

1.25

1.00

0.75

0.50

0.25
0 25 50 75 100 125 150

IRM

Qrr

Tj(°C)

5/7

BYT60P-1000 / BYT261PIV-1000

Fig.13: Turn-offswitching characteristics (without

serieinductance).

IF

LC

DUT

VCC

VF

IRM

diF/ dt

VCC

tIRM

PACKAGEMECHANICAL DATA

ISOTOP

Fig. 14: Turn-off switching characteristics (with
serieinductance).

IF

LC

DUT

LP

VCC

VF

VRP

diF/dt

VCC

DIMENSIONS

REF.

Millimeters Inches

Min. Max. Min. Max.

A 11.80 12.20 0.465 0.480

A1 8.90 9.10 0.350 0.358

B 7.8 8.20 0.307 0.323

C 0.75 0.85 0.030 0.033

C2 1.95 2.05 0.077 0.081

D 37.80 38.20 1.488 1.504

D1 31.50 31.70 1.240 1.248

E 25.15 25.50 0.990 1.004
E1 23.85 24.15 0.939 0.951
E2 24.80typ. 0.976 typ.

G 14.90 15.10 0.587 0.594
G1 12.60 12.80 0.496 0.504
G2 3.50 4.30 0.138 0.169

F 4.10 4.30 0.161 0.169

F1 4.60 5.00 0.181 0.197

P 4.00 4.30 0.157 0.69

P1 4.00 4.40 0.157 0.173

S 30.10 30.30 1.185 1.193

6/7

PACKAGEMECHANICAL DATA

SOD93Plastic

BYT60P-1000 / BYT261PIV-1000

DIMENSIONS

REF.

A 4.70 4.90 0.185 0.193
C 1.17 1.37 0.046 0.054
D 2.50 0.098

D1 1.27 0.050

E 0.50 0.78 0.020 0.031
F 1.10 1.30 0.043 0.051

F3 1.75 0.069

G 10.80 11.10 0.425 0.437
H 14.70 15.20 0.578 0.598

L 12.20 0.480
L2 16.20 0.638
L3 18.0 0.709
L5 3.95 4.15 0.156 0.163
L6 31.00 1.220

O 4.00 4.10 0.157 0.161

Millimeters Inches

Min. Typ. Max. Min. Typ. Max.

Orderingtype Marking Package Weight Base qty

Delivery

mode

BYT60P-1000 BYT60P-1000 SOD93 3.79g. 30 Tube

BYT261PIV-1000 BYT261PIV-1000 ISOTOP 28g. (without screws) 10 Tube

Coolingmethod: byconduction(C)
Recommendedtorque value (ISOTOP): 1.3 N.m (MAX 1.5 N.m) for the 6 x M4 screws.(2 x M4 screws

recommendedfor mounting the package on the heatsink and the 4 screws given with the screw ver­sion).The screws supplied with the package are adapted for mounting on a board (or other types of
terminals)with athicknessof 0.6 mm min and2.2 mm max.

Recommendedtorque value (SOD93):0.8 N.m.
Maximumtorquevalue (SOD93): 1.0 N.m.
Epoxymeets UL94,V0

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change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap­proval of STMicroelectronics.

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 1999 STMicroelectronics- Printed inItaly - All rights reserved.

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