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Fast Silicon Mesa Rectifiers
g
g
g
Features
D
Glass passivated junction
D
Hermetically sealed package
D
Low reverse current
D
Soft recovery characteristics
BYT54.
Vishay Telefunken
Applications
Very fast rectifiers and switches
Absolute Maximum Ratings
Tj = 25_C
Parameter Test Conditions Type Symbol Value Unit
Reverse voltage BYT54A VR=V
=Repetitive peak reverse voltage
BYT54B VR=V
BYT54D VR=V
BYT54G VR=V
BYT54J VR=V
BYT54K VR=V
BYT54M VR=V
Peak forward surge current tp=10ms,
I
half sinewave
Average forward current on PC board I
l=10mm, TL=25°C I
Junction and storage BYT54A–BYT54K Tj=T
temperature range
BYT54M Tj=T
Maximum Thermal Resistance
Tj = 25_C
Parameter Test Conditions Symbol V alue Unit
Junction ambient l=10mm, TL=constant R
on PC board with spacing 25mm R
thJA
thJA
94 9539
RRM
RRM
RRM
RRM
RRM
RRM
RRM
FSM
FAV
FAV
stg
stg
45 K/W
100 K/W
50 V
100 V
200 V
400 V
600 V
800 V
1000 V
30 A
0.75 A
1.25 A
–65...+175°C
–65...+165°C
Electrical Characteristics
Tj = 25_C
Parameter Test Conditions Type Symbol Min Typ Max Unit
Forward voltage IF=1A V
Reverse current VR=V
VR=V
RRM
, Tj=150°C I
RRM
Reverse recovery time IF=0.5A, IR=1A, iR=0.25A t
Document Number 86031
Rev. 2, 24-Jun-98
F
I
R
R
rr
www.vishay.de • FaxBack +1-408-970-5600
1.5 V
5
m
150
m
100 ns
A
A
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Page 2
BYT54.
Vishay Telefunken
Characteristics (Tj = 25_C unless otherwise specified)
120
100
80
60
ll
40
20
0
thJA
0
R – Therm. Resist. Junction / Ambient ( K/W )
51015 25
TL=constant
20
30
l – Lead Length ( mm )94 9552
Figure 1. Max. Thermal Resistance vs. Lead Length
1.2
1.0
VR=V
thJA
RRM
f=50Hz
v
100K/W
PCB
0.8
R
0.6
0.4
0.2
FAV
I – Average Forward Current ( A )
0
200
94 9457
0 40 80 120 160
T
– Ambient Temperature ( °C )
amb
Figure 2. Max. Average Forward Current vs.
Ambient Temperature
1000
Scattering Limit
100
m
10
1
R
I – Reverse Current ( A )
VR=V
RRM
200
94 9459
0.1
0 40 80 120 160
T
– Junction Temperature ( °C )
j
Figure 4. Reverse Current vs. Junction Temperature
10
Tj=25°C
1
Scattering Limit
0.1
F
I – Forward Current ( A )
0.01
3.0
94 9460
0 0.6 1.2 1.8 2.4
VF – Forward Voltage ( V )
Figure 5. Forward Current vs. Forward Voltage
2.0
VR=V
1.6
R
thJA
L=10mm
f=50Hz
v
1.2
0.8
0.4
FAV
I – Average Forward Current ( A )
0
0
40 80 120 160
T
– Ambient Temperature ( °C )94 9458
amb
Figure 3. Max. Average Forward Current vs.
Ambient Temperature
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2 (4)
RRM
45K/W
200
20
16
12
8
D
C – Diode Capacitance ( pF )
4
fv1kHz
T
=25°C
j
0
100
94 9461
0.1 1 10
VR – Reverse Voltage ( V )
Figure 6. Typ. Diode Capacitance vs. Reverse Voltage
Document Number 86031
Rev. 2, 24-Jun-98
Page 3
Dimensions in mm
BYT54.
Vishay Telefunken
Sintered Glass Case
SOD 57
Weight max. 0.5g
∅ 3.6 max.
Cathode Identification
26 min. 26 min.
4.2 max.
technical drawings
according to DIN
specifications
94 9538
∅ 0.82 max.
Document Number 86031
Rev. 2, 24-Jun-98
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Page 4
BYT54.
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. V arious national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly , any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
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4 (4)
Document Number 86031
Rev. 2, 24-Jun-98
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