Page 1
Very Fast Silicon Mesa Rectifiers
g
g
Features
D
Glass passivated junction
D
Hermetically sealed package
D
Low reverse current
D
Soft recovery characteristics
Applications
Very fast rectifiers and switches
Switched mode power supplies
High–frequency inverter circuits
BYT53.
Vishay Telefunken
94 9539
Absolute Maximum Ratings
Tj = 25_C
Parameter Test Conditions Type Symbol Value Unit
Reverse voltage BYT53A VR=V
=Repetitive peak reverse voltage
BYT53B VR=V
BYT53C VR=V
BYT53D VR=V
BYT53F VR=V
BYT53G VR=V
Peak forward surge current tp=10ms,
I
half sinewave
Average forward current l=10mm, TL=25°C I
Junction and storage temperature range Tj=T
Maximum Thermal Resistance
Tj = 25_C
Parameter Test Conditions Symbol Value Unit
Junction ambient l=10mm, TL=constant R
on PC board with spacing 25mm R
thJA
thJA
Electrical Characteristics
Tj = 25_C
Parameter Test Conditions Type Symbol Min Typ Max Unit
Forward voltage IF=1A V
IF=1A, Tj=175°C V
Reverse current VR=V
VR=V
RRM
, Tj=150°C I
RRM
Reverse recovery time IF=0.5A, IR=1A, iR=0.25A t
F
F
I
R
R
rr
FSM
FAV
RRM
RRM
RRM
RRM
RRM
RRM
50 V
100 V
150 V
200 V
300 V
400 V
50 A
1.9 A
–65...+175°C
stg
45 K/W
100 K/W
1.1 V
0.9 V
5
200
50 ns
m
A
m
A
Document Number 86030
Rev. 4, 24-Jun-98
www.vishay.de • FaxBack +1-408-970-5600
1 (4)
Page 2
BYT53.
Vishay Telefunken
Characteristics (Tj = 25_C unless otherwise specified)
120
100
80
60
ll
40
20
0
thJA
0
R – Therm. Resist. Junction / Ambient ( K/W )
51015 25
l – Lead Length ( mm )94 9552
TL=constant
20
30
Figure 1. Max. Thermal Resistance vs. Lead Length
240
=
BYT53C
BYT53B
BYT53A
VR = V
BYT53G
BYT53F
BYT53D
RRM
220
200
180
160
140
120
100
80
60
40
20
R
P – Reverse Power Dissipation ( mW )
0
25 50 75 100 125 150 175
160K/W
Tj – Junction Temperature ( °C )15770
R
thJA
45K/W
100K/W
Figure 2. Max. Reverse Power Dissipation vs.
Junction Temperature
2.0
1.6
1.2
0.8
0.4
FAV
I – Average Forward Current ( A )
0
R
=100K/W
thJA
PCB: d=25mm
0 20 40 60 80 100 120 140 160 180
T
– Ambient Temperature ( °C )15769
amb
VR=V
RRM
half sinewave
R
=45K/W
thJA
l=10mm
Figure 4. Max. Average Forward Current vs.
Ambient Temperature
10
Tj=175°C
1
Tj=25°C
0.1
0.01
F
I – Forward Current ( A )
0.001
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
VF – Forward Voltage ( V )15768
Figure 5. Max. Forward Current vs. Forward Voltage
1000
VR = V
RRM
m
100
10
R
I – Reverse Current ( A )
1
25 50 75 100 125 150 175
Tj – Junction Temperature ( °C )15771
Figure 3. Max. Reverse Current vs.
Junction Temperature
www.vishay.de • FaxBack +1-408-970-5600
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30
Tj=25°C
24
18
12
D
6
C – Diode Capacitance ( pF )
94 9456
0
0.1 1 10
VR – Reverse Voltage ( V )
100
Figure 6. Typ. Diode Capacitance vs. Reverse Voltage
Document Number 86030
Rev. 4, 24-Jun-98
Page 3
Dimensions in mm
BYT53.
Vishay Telefunken
Sintered Glass Case
SOD 57
Weight max. 0.5g
∅ 3.6 max.
Cathode Identification
26 min. 26 min.
4.2 max.
technical drawings
according to DIN
specifications
94 9538
∅ 0.82 max.
Document Number 86030
Rev. 4, 24-Jun-98
www.vishay.de • FaxBack +1-408-970-5600
3 (4)
Page 4
BYT53.
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. V arious national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly , any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
www.vishay.de • FaxBack +1-408-970-5600
4 (4)
Document Number 86030
Rev. 4, 24-Jun-98
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