Page 1
Silicon Mesa Rectifiers
g
g
Features
D
Glass passivated junction
D
Hermetically sealed package
D
Low reverse current
BYT51.
Vishay Telefunken
Applications
Rectifiers
Absolute Maximum Ratings
Tj = 25_C
Parameter Test Conditions Type Symbol Value Unit
Reverse voltage BYT51A VR=V
=Repetitive peak reverse voltage
Peak forward surge current tp=10ms,
half sinewave
Repetitive peak forward current I
Average forward current on PC board I
l=10mm, TL=30°C I
Junction and storage
temperature range
BYT51B VR=V
BYT51D VR=V
BYT51G VR=V
BYT51J VR=V
BYT51K VR=V
BYT51M VR=V
Tj=T
I
FSM
FRM
FAV
FAV
RRM
RRM
RRM
RRM
RRM
RRM
RRM
stg
94 9539
50 V
100 V
200 V
400 V
600 V
800 V
1000 V
50 A
9 A
1 A
1.5 A
–65...+175
°
C
Maximum Thermal Resistance
Tj = 25_C
Parameter Test Conditions Symbol Value Unit
Junction ambient l=10mm, TL=constant R
on PC board with spacing 25mm R
Document Number 86028
Rev. 3, 24-Jun-98
thJA
thJA
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45 K/W
100 K/W
1 (4)
Page 2
BYT51.
g
Vishay Telefunken
Electrical Characteristics
Tj = 25_C
Parameter Test Conditions Type Symbol Min Typ Max Unit
Forward voltage IF=1A V
IF=1A, Tj=175°C V
Reverse current VR=V
VR=V
RRM
, Tj=150°C I
RRM
Reverse recovery time IF=0.5A, IR=1A, iR=0.25A t
Characteristics (Tj = 25_C unless otherwise specified)
F
F
I
R
R
rr
0.95 1.1 V
1.0 V
1
m
100
m
4
m
A
A
s
120
100
80
60
40
20
0
thJA
R – Therm. Resist. Junction / Ambient ( K/W )
ll
TL=constant
0
51015 25
l – Lead Length ( mm )94 9101
20
30
Figure 1. Typ. Thermal Resistance vs. Lead Length
2.0
VR=V
RRM
1.6
1.2
fv1kHz
PC Board
2.0
1.6
1.2
0.8
0.4
FAV
I – Average Forward Current ( A )
0
0
40 80 120 160
T
– Ambient Temperature ( °C )94 9405
amb
VR=V
fv1kHz
l=10mm
RRM
Figure 3. Max. Average Forward Current vs.
Ambient Temperature
1000
100
m
Scattering Limit
10
200
0.8
0.4
FAV
I – Average Forward Current ( A )
0
0
40 80 120 160
T
– Ambient Temperature ( °C )94 9406
amb
200
Figure 2. Max. Average Forward Current vs. Ambient
Temperature
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1
R
I – Reverse Current ( A )
VR=V
RRM
200
94 9407
0.1
0 40 80 120 160
T
– Junction Temperature ( °C )
j
Figure 4. Reverse Current vs. Junction Temperature
Document Number 86028
Rev. 3, 24-Jun-98
Page 3
BYT51.
Vishay Telefunken
10
Tj=25°C
1
Scattering Limit
0.1
F
I – Forward Current ( A )
0.01
0 0.6 1.2 1.8 2.4
94 9408
VF – Forward Voltage ( V )
Figure 5. Forward Current vs. Forward Voltage
Dimensions in mm
Sintered Glass Case
SOD 57
Weight max. 0.5g
Cathode Identification
3.0
50
40
30
20
10
D
C – Diode Capacitance ( pF )
0
0.1 1.0 10.0 100.0
VR – Reverse Voltage ( V )15767
Figure 6. Typ. Diode Capacitance vs. Reverse Voltage
∅ 3.6 max.
technical drawings
according to DIN
specifications
94 9538
∅ 0.82 max.
Document Number 86028
Rev. 3, 24-Jun-98
26 min. 26 min.
4.2 max.
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Page 4
BYT51.
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. V arious national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly , any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
www.vishay.de • FaxBack +1-408-970-5600
4 (4)
Document Number 86028
Rev. 3, 24-Jun-98
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