Datasheet BYT231PIV-400, BYT230PIV-400 Datasheet (SGS Thomson Microelectronics)

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BYT230PIV-400



FAST RECOVERY RECTIFIER DIODES

MAIN PRODUCT CHARACTERISTICS

F(AV)

RRM

VF(max) 1.4 V trr (max) 50 ns

FEATURES ANDBENEFITS

n VERY LOW REVERSE RECOVERY TIME n VERY LOW SWITCHING LOSSES n LOW NOISE TURN-OFF SWITCHING n INSULATED PACKAGE: ISOTOP

Insulation voltage: 2500 V Capacitance = 45 pF Inductance < 5nH

DESCRIPTION

2 x 30 A

400 V

RMS

BYT231PIV-400

K2 A2

A1K1

BYT231PIV-400

ISOTOP

(Plastic)

A2 K1

A1K2

BYT230PIV-400

These rectifierdevicesaresuited for free-wheeling function in converters and motor controlcircuits.

Packaged in ISOTOP, they are intended for use in Switch Mode Power Supplies.

ABSOLUTE RATINGS (limiting values, per diode)

Symbol Parameter Value Unit

RRM

FRM

F(RMS)

F(AV)

Repetitive peakreverse voltage Repetitive peakforward current tp=5 µs F=1kHz RMS forward current Average forward current Tc = 75°C

400 V 900 A

50 A 30 A

δ = 0.5

FSM

stg

TM: ISOTOP is aregistered trademark of STMicroelectronics.

Surge non repetitive forward current tp = 10 ms Sinusoidal Storage temperaturerange Maximum operating junction temperature

350 A

- 40 to + 150 °C 150 °C

May 2000 - Ed: 5D

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BYT230PIV-400 / BYT231PIV-400

THERMAL RESISTANCES

Symbol Parameter Value Unit

th(j-c)

Junction to case Per diode

Total

th(c)

Coupling

When the diodes 1 and 2 are used simultaneously : ∆ Tj(diode 1)= P(diode) x R

(Per diode) + P(diode 2) x R

th(j-c)

th(c)

STATIC ELECTRICAL CHARACTERISTICS (per diode)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

VF*

Forward voltage drop Tj = 25°CI

=30A

Tj = 100°C

IR**

Pulse test : * tp = 380 µs, δ <2%

Reverse leakage current

** tp = 5 ms, δ <2%

Tj = 25°CV

R=VRRM

Tj = 100°C

To evaluatethe conduction losses use the following equation: P = 1.1 x I

F(AV)

+0.0095 I

F2(RMS)

1.5

0.8

0.1

°C/W

1.5 V

1.4 35 µA

6mA

RECOVERY CHARACTERISTICS

Symbol Test Conditions Min. Typ. Max. Unit

Tj = 25°CIF=1A VR= 30V dIF/dt = - 15A/µs

IF= 0.5A IR=1A Irr= 0.25A

100 ns

TURN-OFF SWITCHING CHARACTERISTICS

Symbol Parameter Test Conditions Min. Typ. Max. Unit

IRM

V V

Maximum reverse recovery time

Maximum reverse recovery current

Turn-off overvol t age

coeff icient

dIF/dt = - 120 A/µsV dIF/dt = - 240 A/µs dIF/dt = - 120 A/µs dIF/dt = - 240 A/µs

Tj = 100°CVCC= 60V IF=I

= 200 V

IF=30A Lp0.05 µH Tj = 100°C (see fig. 13)

F(AV)

dIF/dt = - 30A/µsLp=1µH (see fig. 14)

75 ns

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BYT230PIV-400 / BYT231PIV-400

Fig. 1: Average forward power dissipation versus

average forward current (per diode).

PF(av)(W)

60 50 40

δ= 0.2

δ = 0.1

δ = 0.05

δ=0.5

δ =1

30 20

IF(av)(A)

0 5 10 15 20 25 30 35 40

=tp/T

Fig. 3: Average forward current versus ambient temperature (δ=0.5, per diode).

IF(av)(A)

35 30 25 20 15 10

=tp/T

0 25 50 75 100 125 150

Rth(j-a)=Rth(j-c)

Rth(j-a)=5°C/W

Tamb(°C)

Fig. 2:Peak currentversus form factor (per diode).

IM(A)

250

200

=tp/T

150

100

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

P=40W

P=50W

P=30W

P=20W

Fig. 4: Non repetitive surge peak forward current versus overload duration (per diode).

IM(A)

200 180 160 140 120 100

60 40

1E-3 1E-2 1E-1 1E+0

δ=0.5

Tc=50°C

Tc=25°C

Tc=75°C

t(s)

Fig. 5: Relative variation of thermal impedance

junction tocase versus pulse duration (per diode).

K=[Zth(j-c)/Rth(j-c)]

1.0

δ =0.5

0.5

δ =0.2

δ =0.1

0.2

Single pulse

0.1 1E-3 1E-2 1E-1 1E+0

tp(s)

=tp/T

Fig. 6: Forward voltage drop versus forward current (maximumvalues, per diode).

IFM(A)

200.0

100.0

10.0

1.0

0.1

0.0 0.5 1.0 1.5 2.0 2.5

Typicalvalues

Tj=100°C

Tj=25°C

Tj=100°C

VFM(V)

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BYT230PIV-400 / BYT231PIV-400

Fig. 7: Junction capacitance versus reverse

voltage applied (typical values, per diode).

C(pF)

100

F=1MHz Tj=25°C

80 70 60 50 40 30 20

1 10 100 200

VR(V)

Fig. 9: Recovery current versus dIF/dt (per diode).

IRM(A)

IF=IF(av)

90% confidence

Tj=100°C

Fig. 8: Recovery charges versus dIF/dt (per diode).

Qrr(nC)

1000

IF=IF(av)

90% confidence

Tj=100°C

100

dIF/dt(A/µs)

10 20 50 100 200 500

Fig. 10: Transient peak forward voltage versus dIF/dt (per diode).

VFP(V)

IF=IF(av)

90% confidence

Tj=100°C

dIF/dt(A/µs)

10 20 50 100 200 500

Fig. 11: Forward recovery time versus dIF/dt (per diode).

tfr(µs)

1.50

1.25

1.00

0.75

0.50

0.25

0.00

0 100 200 300 400 500

dIF/dt(A/µs)

IF=IF(av)

90% confidence

Tj=100°C

20 15 10

5 0

0 100 200 300 400 500

dIF/dt(A/µs)

Fig. 12: Dynamic parameters versus junction

temperature.

Qrr;IRM[Tj] / Qrr;IRM[Tj=100°C]

1.50

1.25

1.00

0.75

0.50

0.25 0 25 50 75 100 125 150

IRM

Qrr

Tj(°C)

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BYT230PIV-400 / BYT231PIV-400

Fig. 13: Turn-off switching characteristics (without

serie inductance).

DUT

VCC

IRM

diF/dt

VCC

tIRM

Fig. 14: Turn-off switching characteristics (with

serie inductance).

DUT

VCC

VRP

diF/dt

VCC

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BYT230PIV-400 / BYT231PIV-400

PACKAGE MECHANICAL DATA

ISOTOP

DIMENSIONS

REF.

Millimeters Inches

Min. Max. Min. Max.

A 11.80 12.20 0.465 0.480

A1 8.90 9.10 0.350 0.358

B 7.8 8.20 0.307 0.323 C 0.75 0.85 0.030 0.033

C2 1.95 2.05 0.077 0.081

D 37.80 38.20 1.488 1.504

D1 31.50 31.70 1.240 1.248

E 25.15 25.50 0.990 1.004 E1 23.85 24.15 0.939 0.951 E2 24.80 typ. 0.976 typ.

G 14.90 15.10 0.587 0.594

G1 12.60 12.80 0.496 0.504 G2 3.50 4.30 0.138 0.169

F 4.10 4.30 0.161 0.169 F1 4.60 5.00 0.181 0.197

P 4.00 4.30 0.157 0.69 P1 4.00 4.40 0.157 0.173

S 30.10 30.30 1.185 1.193

Ordering type Marking Package Weight Base qty

Delivery

mode

BYT230PIV-400 BYT230PIV-400 ISOTOP 28 g. (without screws) 10 Tube BYT231PIV-400 BYT231PIV-400 ISOTOP 28 g. (without screws) 10 Tube

n Cooling method: by conduction (C) n Recommended torque value : 1.3 N.m (MAX 1.5 N.m) for the 6 x M4 screws. (2 x M4 screws recom-

mended for mounting the package on the heatsink and the 4 screws given with the screw version).The screws supplied with the package are adapted for mounting on a board (or other types of terminals) with a thickness of 0.6 mm min and 2.2 mm max.

n Epoxy meets UL94,V0

Information furnished is believedtobeaccurateandreliable.However,STMicroelectronicsassumesnoresponsibility for the consequencesof use of such informationnor forany infringementofpatents or otherrights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change withoutnotice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

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