Datasheet BYT230Y-400 Datasheet (SGS Thomson Microelectronics)

Page 1
BYT230Y-400
FAST RECOVERY RECTIFIERDIODES
PRELIMINARY DATASHHET
MAINPRODUCTCHARACTERISTICS
I
F(AV)
V
RRM
2 x 30 A
400 V
Tj (max) 150°C
(max) 1.3 V
V
F
FEATURESAND BENEFITS
VERYLOWREVERSERECOVERYTIME VERYLOWSWITCHINGLOSSES LOWNOISETURN-OFF SWITCHING
DESCRIPTION
Dual400Vrectifierssuitedfor SwitchModePower Suppliesand other converters.
Packagedin Max247, this device is also intended for use in welding equipment and telecom power supplies.
ABSOLUTE RATINGS
(limitingvalues,perdiode)
A1
K
A2
A2
K
A1
Max247
Symbol Parameter Value Unit
V
RRM
I
FRM
I
F(RMS)
I
F(AV)
I
FSM
T
stg
Tj
October 1999 - Ed: 3A
Repetitivepeakreverse voltage Repetitivepeakforward current tp=5µs F=5kHz RMSforwardcurrent Averageforward current Tc= 105°C
Surgenonrepetitiveforwardcurrent tp= 10 ms Sinusoidal Storagetemperature range Maximumoperating junctiontemperature
Per diode
δ = 0.5
Per device
400 V 380 A
50 A 30 A 60
300 A
- 55 to + 150 °C 150 °C
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Page 2
BYT230Y-400
THERMAL RESISTANCES
Symbol Parameter Value Unit
R
R
th (j-c)
th(c)
Junctionto case Perdiode
Total Coupling
0.95
0.55
0.15 °C/W
Whenthe diodes1 and 2 are used simultaneously:
Tj(diode1) = P(diode1)x R
(Perdiode) + P(diode2) x R
th(j-c)
th(c)
STATICELECTRICALCHARACTERISTICS(per diode)
Symbol Parameter Tests Conditions Min. Typ. Max. Unit
I
*
R
Reverseleakage current
V
**
F
Pulse test : * tp = 5 ms,δ<2%
Forwardvoltagedrop Tj= 25°CI
** tp = 380 µs, δ <2%
Tj= 25°CV
R=VRRM
Tj= 125°C
=30A
F
Tj= 125°CI Tj= 25°CI Tj= 125°CI
=30A
F
=60A
F
=60A
F
312mA
0.9 1.3
1.1 1.6
35 µA
1.5 V
1.7
°C/W
To evaluatethe conductionlossesuse the followingequation: P = 1.0x I
F(AV)
+ 0.01 I
F2(RMS)
RECOVERYCHARACTERISTICS
Symbol TestConditions Min. Typ. Max. Unit
t
rr
Tj=25°CIF= 0.5A IR=1A Irr=0.25A
I
=1A VR= 30V dIF/dt= - 15A/µs
F
50 ns
100
TURN-OFFSWITCHINGCHARACTERISTICS (without serieinductance)
Symbol TestConditions Min. Typ. Max. Unit
t
I
IRM
RM
dIF/dt = - 120A/µsV
/dt = - 240A/µs
dI
F
dIF/dt = - 120A/µs dI
/dt = - 240A/µs
F
CC
= 30A
I
F
=0.05µH
L
p
T
= 100°C
j
=200 V
50
12
75 ns
9A
TURN-OFFOVERVOLTAGECORFFICIENT (withserie inductance)
Symbol TestConditions Min. Typ. Max. Unit
3.3 /
C=
V V
Tj=100°CVCC= 60V IF=I
RP
dIF/dt = - 30A/µsLp=1µH
CC
F (AV)
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Page 3
BYT230Y-400
Fig. 1: Average forward power dissipation versus
averageforward current (per diode).
PF(av)(W)
60
δ = 0.5
50
δ = 0.1
δ = 0.05
δ = 0.2
δ =1
40 30 20
T
10
=tp/T
0
0 5 10 15 20 25 30 35 40
IF(av)(A)
δ
tp
Fig. 3: Average forward current versus ambient temperature(δ=0.5, perdiode).
IF(av)(A)
35 30 25 20 15 10
5
=tp/T tp
δ
0
0 25 50 75 100 125 150
Rth(j-a)=Rth(j-c)
Rth(j-a)=5°C/W
T
Tamb(°C)
Fig.2: Peakcurrent versusform factor(per diode).
IM(A)
250
P=40W
T
200
=tp/T tp
δ
150
P=60W
100
P=20W
50
0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
P=80W
Fig. 4: Non repe ti t i ve surge peak forward current versusoverloadduration( perdiode).
IM(A)
250
200
150
Tc=50°C
100
IM
50
0 1E-3 1E-2 1E-1 1E+0
δ=0.5
t
t(s)
Tc=75°C
Tc=110°C
Fig. 5: Relative variation of thermal impedance junctionto case versuspulse duration (perdiode).
K=[Zth(j-c)/Rth(j-c)]
1.0
δ= 0.5
δ= 0.2
δ = 0.1
Single pulse
tp(s)
0.1 1E-3 1E-2 1E-1 1E+0
T
=tp/T tp
δ
Fig. 6:
Forward voltage drop versus forward
current(maximumvalues, per diode).
IFM(A)
200.0
100.0
10.0
1.0
0.1
0.0 0.5 1.0 1.5 2.0 2.5
Typicalvalues
Tj=125°C
Tj=25°C
Tj=125°C
VFM(V)
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Page 4
BYT230Y-400
Fig. 7:
Junction capacitance versus reverse
voltageapplied(typicalvalues, per diode).
C(pF)
100
50
20
10
1 10 100 200
Fig.9:
50
Recoverycurrentversus dI
IRM(A)
IF=IF(av)
90% confidence
Tj=100°C
VR(V)
/dt (perdiode).
F
F=1MHz Tj=25°C
Fig.8:
Fig. 10:
RecoverychargesversusdI
Qrr(nC)
1000
100
IF=IF(av)
90% confidence
Tj=100°C
10
10 20 50 100 200 500
dIF/dt(A/µs)
Transientpeak forwardversusdI
/dt(perdiode).
F
diode).
VFP(V)
30 25
IF=IF(av)
90% confidence
Tj=100°C
/dt(per
F
10
1
10 20 50 100 200 500
Fig. 11:
Forward recoverytime versusdI
dIF/dt(A/µs)
/dt (per
F
diode).
tfr(µs)
1.50
1.25
1.00
0.75
0.50
0.25
0.00 0 100 200 300 400 500
dIF/dt(A/µs)
IF=IF(av)
90% confidence
Tj=100°C
20 15 10
5 0
0 100 200 300 400 500
Fig. 12:
Dynamic parameters versus junction
dIF/dt(A/µs)
temperature.
Qrr;IRM[Tj] / Qrr;IRM[Tj=100°C]
1.50
1.25
1.00
0.75
0.50
0.25 0 25 50 75 100 125 150
IRM
Qrr
Tj(°C)
4/5
Page 5
PACKAGEMECHANICAL DATA
Max247
BYT230Y-400
DIMENSIONS
REF.
Millimeters Inches
Min. Max. Min. Max.
AE
A 4.70 5.30 0.185 0.209
A1 2.20 2.60 0.087 0.102
b 1.00 1.40 0.038 0.055
D
b1 2.00 2.40 0.079 0.094 b2 3.00 3.40 0.118 0.133
c 0.40 0.80 0.016 0.031
L1
D 19.70 10.30 0.776 0.799
A1
e 5.35 5.55 0.211 0.219
b1
L
b2
e
b
c
E 15.30 15.90 0.602 0.626 L 14.20 15.20 0.559 0.598
L1 3.70 4.30 0.146 0.169
Orderingtype Marking Package Weight Base qty Deliverymode
BYT230Y-400 BYT230Y-400 Max247 5g. 30 Tube
EpoxymeetsUL94,V0
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