Page 1
ULTRAFAST POWER RECTIFIER DIODE
MAIN PRODUCT CHARACTERISTICS
BYT200PIV-400
I
F(AV)
V
RRM
2 x100 A
400 V
VF(max) 1.4 V
FEATURES AND BENEFITS
n LOW CONDUCTION LOSSES
n NEGLIGIBLE SWITCHING LOSSES
n HIGH AVALANCHE CAPABILITY
n ISOLATED PACKAGE :
2500 V
DC
CAPACITANCE 42pF
DESCRIPTION
High current power rectifier diode suited for
Switched Mode Power Supply and high frequency
DC to DC converters.
Packaged in ISOTO P, this devic e is intended
for use in a medi um v olt age hig h c ur rent applications such as welding equipment and
Telecom supplies.
ABSOLUTE MAXIMUM RATING
A1 K1
A2 K2
4
ISOTOP
1=A1
2
3
TM
2=K1
3=A2
4=K2
1
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
Repetitive peak reverse voltage 400 V
RMS forward current 150 A
Average forward current Tc = 80°C
100 A
δ = 0.5
I
FSM
Surge non repetitive forward current tp = 10 ms
600 A
Sinusoidal
I
FRM
T
stg
Repetitive peak forward current tp 10 µs 800 A
Storage temperature range - 40 to + 150 °C
Tj Maximum junction temperature 150 °C
ISOTOP is atrademark of STMicroelectronics
May 2000 - Ed: 3C
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Page 2
BYT200PIV-400
THERMAL RESISTANCES
Symbol Parameter Value Unit
R
th (j-c)
R
th (c)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol Parameter Tests Conditions Min. Typ. Max. Unit
IR* Reverse leakage current Tj = 25°CV
VF** Forward voltage drop Tj = 25°CI
Pulse test : * tp = 5 ms, duty cycle < 2 %
RECOVERY CHARACTERISTICS
Junction to case Per leg 0.55 °C/W
Total 0.33
Coupling 0.1
R=VRRM
120 µA
Tj = 100°C 4 12 mA
= 100 A 1.6 V
F
Tj = 125°CI
** tp = 380 µs, duty cycle < 2%
= 100 A 0.95 1.4
F
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
rr
Reverse recovery time IF=0.5A IR=1A Irr=0.25A
IF=1A dI/dt= -50A/µs
55
100
Vr=30V
I
RM
Reverserecoverycurrent dIF/dt=-200A/µs Tj=125°C
40 A
VR=400V IF=100A
S factor Softness factor dIF/dt=-200A/µs Tj=125°C
0.25
VR=400V IF=100A
t
fr
Forward recovery time IF=100A dIF/dt=500A/µs
500 ns
Measured at 1.1 x VFmax.
V
FP
Peak forward voltage 12 V
Tj=25°C
To evaluate the conduction losses use the following equation :
P = 0.8 x I
+ 0.00228 x I
F(AV)
F2(RMS)
ns
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Page 3
BYT200PIV-400
Fig. 1: Average forward power dissipation versus
average forward current (per diode).
PF(av)(W)
140
120
100
80
δ = 0.2
δ= 0.1
δ = 0.05
δ = 0.5
δ =1
60
40
20
0
0 102030405060708090100110120130
IF(av)(A)
Fig. 3: Average forward current versus ambient
temperature (δ = 0.5, per diode).
IF(av)(A)
120
100
80
60
40
20
0
0 25 50 75 100 125 150
Rth(j-a)=Rth(j-c)
Rth(j-a)=2°C/W
Tamb(°C)
Fig. 2:Peak currentversus form factor(perdiode).
IM(A)
500
400
300
200
P=75W
P=100W
P=125W
P=150W
100
0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
δ
Fig. 4: Non repetitive surge peak forward current
versus overload duration (per diode).
IM(A)
700
600
500
400
300
200
100
0
1E-3 1E-2 1E-1 1E+0
t(s)
Tc=50°C
Tc=75°C
Tc=100°C
Fig. 5: Relative variation of thermal impedance
junction to case versus pulse duration (per diode).
K=[Zth(j-c)/Rth(j-c)]
1.0
δ = 0.5
0.5
δ = 0.2
δ = 0.1
0.2
Single pulse
0.1
1E-3 1E-2 1E-1 1E+0
tp(s)
Fig. 6: Forwardvoltage drop versus forward current
(maximumvalues,perdiode).
IFM(A)
500
100
10
1
0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50
Tj=125°C
Tj=25°C
VFM(V)
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Page 4
BYT200PIV-400
Fig. 7: Junctioncapacitance versusreversevoltage
applied(typicalvalues, perdiode).
C(pF)
500
450
F=1MHz
Tj=25°C
400
350
300
250
200
150
100
1 10 100 200
VR(V)
Fig. 9:Recovery current versusdIF/dt(perdiode).
IRM(A)
50
IF=IF(av)
90% confidence
45
Tj=125°C
40
35
30
25
20
15
10
5
0
0 100 200 300 400 500
dIF/dt(A/µs)
Fig. 8: Recoverycharges versusdIF/dt(perdiode).
Qrr(µC)
3.0
2.5
IF=IF(av)
90% confidence
Tj=125°C
2.0
1.5
1.0
0.5
0.0
0 100 200 300 400 500
dIF/dt(A/µs)
Fig. 10: Transient peak forward voltage versus
dIF/dt (per diode).
VFP(V)
14
IF=IF(av)
90% confidence
12
Tj=125°C
10
8
6
4
2
0
0 100 200 300 400 500 600 700 800
dIF/dt(A/µs)
Fig. 11: Dynam ic parameters versus junction
temperature.
Qrr;IRM[Tj] / Qrr;IRM[Tj=125°C]
1.25
1.00
0.75
0.50
0.25
0.00
0 25 50 75 100 125 150
4/5
IRM
Qrr
Tj(°C)
Page 5
PACKAGE MECHANICAL DATA
ISOTOP
BYT200PIV-400
DIMENSIONS
REF.
A 11.80 12.20 0.465 0.480
A1 8.90 9.10 0.350 0.358
B 7.8 8.20 0.307 0.323
C 0.75 0.85 0.030 0.033
C2 1.95 2.05 0.077 0.081
D 37.80 38.20 1.488 1.504
D1 31.50 31.70 1.240 1.248
E 25.15 25.50 0.990 1.004
E1 23.85 24.15 0.939 0.951
E2 24.80 typ. 0.976 typ.
G 14.90 15.10 0.587 0.594
G1 12.60 12.80 0.496 0.504
G2 3.50 4.30 0.138 0.169
F 4.10 4.30 0.161 0.169
F1 4.60 5.00 0.181 0.197
P 4.00 4.30 0.157 0.69
P1 4.00 4.40 0.157 0.173
S 30.10 30.30 1.185 1.193
Millimeters Inches
Min. Max. Min. Max.
n Epoxy meets UL94, V0
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