Page 1
DISCRETE SEMICONDUCTORS
DATA SH EET
handbook, 2 columns
M3D118
BYM56 series
Controlled avalanche rectifiers
Product specification
Supersedes data of April 1992
File under Discrete Semiconductors, SC01
1996 May 24
Page 2
Philips Semiconductors Product specification
Controlled avalanche rectifiers BYM56 series
FEATURES
• Glass passivated
• High maximum operating
DESCRIPTION
Rugged glass package, using a high
temperature alloyed construction.
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
temperature
• Low leakage current
• Excellent stability
ka
• Guaranteed avalanche energy
absorption capability
2/3 page (Datasheet)
MAM104
• Available in ammo-pack
• Also available with preformed leads
Fig.1 Simplified outline (SOD64) and symbol.
for easy insertion.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
RRM
repetitive peak reverse voltage
BYM56A − 200 V
BYM56B − 400 V
BYM56C − 600 V
BYM56D − 800 V
BYM56E − 1000 V
V
RWM
crest working reverse voltage
BYM56A − 200 V
BYM56B − 400 V
BYM56C − 600 V
BYM56D − 800 V
BYM56E − 1000 V
V
R
continuous reverse voltage
BYM56A − 200 V
BYM56B − 400 V
BYM56C − 600 V
BYM56D − 800 V
BYM56E − 1000 V
I
F(AV)
average forward current Ttp=60°C;
− 3.5 A
lead length = 10 mm;
averaged over any 20 ms
period; see Figs 2 and 4
T
=65°C; PCB mounting
amb
− 1.4 A
(see Fig.9); averaged over any
20 ms period; see Figs 3 and 4
I
FSM
non-repetitive peak forward current t = 10 ms half sinewave;
Tj=T
VR=V
prior to surge;
j max
RRMmax
− 80 A
1996 May 24 2
Page 3
Philips Semiconductors Product specification
Controlled avalanche rectifiers BYM56 series
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
E
RSM
non-repetitive peak reverse avalanche
energy
T
stg
T
j
storage temperature −65 +175 °C
junction temperature
ELECTRICAL CHARACTERISTICS
T
=25°C; unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
V
F
(BR)R
forward voltage IF=3A; Tj=T
I
= 3 A; see Fig.6 −−1.15 V
F
reverse avalanche
IR= 0.1 mA
breakdown voltage
BYM56A 225 −−V
BYM56B 450 −−V
BYM56C 650 −−V
BYM56D 900 −−V
BYM56E 1100 −−V
I
R
reverse current VR=V
V
R=VRRMmax
see Fig.7
t
rr
reverse recovery time when switched from IF= 0.5 A to
IR= 1 A; measured at IR= 0.25 A;
see Fig.10
C
d
diode capacitance VR= 0 V; f = 1 MHz; see Fig.8 − 90 −
L = 120 mH; Tj=T
j max
prior to
− 20
surge; inductive load switched off
see Fig.5
see Fig.6 −−0.95 V
j max;
; see Fig.7 −−1µA
RRMmax
; Tj= 165 °C;
−−150 µA
−65 +175 °C
− 3 −
mJ
µs
pF
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
R
th j-tp
th j-a
thermal resistance from junction to tie-point lead length = 10 mm 25 K/W
thermal resistance from junction to ambient note 1 75 K/W
Note
1. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper ≥40 µm, see Fig.9.
For more information please refer to the
“General Part of Handbook SC01”
.
1996 May 24 3
Page 4
Philips Semiconductors Product specification
Controlled avalanche rectifiers BYM56 series
GRAPHICAL DATA
5.0
handbook, halfpage
I
F(AV)
(A)
4.0
3.0
2.0
1.0
0
0 200
a =1.57; VR=V
Lead length 10 mm.
40 80 120 160
; δ= 0.5.
RRMmax
MBG037
Ttp (
Fig.2 Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
T
amb
MBG058
o
(
C)
2.0
handbook, halfpage
I
F(AV)
(A)
1.6
1.2
0.8
0.4
0
o
C)
a =1.57; VR=V
Device mounted as shown in Fig.9.
40 80 120 160
0 200
; δ= 0.5.
RRMmax
Fig.3 Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
3
2
I
F(AV)
MGC746
1.57
1.42
(A)
(W)
a=I
F(RMS)/IF(AV)
5
P
4
3
2
1
0
012 4
handbook, halfpage
; VR=V
RRMmax
a = 3
; δ= 0.5.
2.5
Fig.4 Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function
of average forward current.
200
handbook, halfpage
T
j
MSA873
(°C)
100
ABCDE
0
0 400 1200
Solid line =VR.
Dotted line =V
RRM
; δ= 0.5.
800
V (V)
R
Fig.5 Maximum permissible junction temperature
as a function of reverse voltage.
1996 May 24 4
Page 5
Philips Semiconductors Product specification
Controlled avalanche rectifiers BYM56 series
16
handbook, halfpage
I
F
(A)
12
8
4
0
0
Solid line: Tj=25°C.
Dotted line: Tj= 175°C.
VF (V)
Fig.6 Forward current as a function of forward
voltage; maximum values.
MBG046
Tj (
MGC734
2000
o
C)
3
10
handbook, halfpage
I
R
(µA)
2
10
10
1
−1
VR=V
10
RRMmax.
40 80 120 160
21
max
Fig.7 Reverse current as a function of junction
temperature; maximum values.
VR (V)
MBG027
3
10
2
10
handbook, halfpage
C
d
(pF)
10
1
1
f =1 MHz; Tj=25°C.
10 10
2
Fig.8 Diode capacitance as a function of reverse
voltage; typical values.
1996 May 24 5
handbook, halfpage
Dimensions in mm.
50
25
7
50
2
3
MGA200
Fig.9 Device mounted on a printed-circuit board.
Page 6
Philips Semiconductors Product specification
Controlled avalanche rectifiers BYM56 series
I
I
(A)
0.25
R
(A)
0.5
0.5
1.0
F
t
rr
0
t
MAM057
handbook, full pagewidth
10 Ω
DUT
+
25 V
1 Ω
50 Ω
Input impedance oscilloscope: 1 MΩ, 22pF; tr≤ 7ns.
Source impedance: 50 Ω; tr≤ 15ns.
Fig.10 Test circuit and reverse recovery time waveform and definition.
1996 May 24 6
Page 7
Philips Semiconductors Product specification
Controlled avalanche rectifiers BYM56 series
PACKAGE OUTLINE
handbook, full pagewidth
Dimensions in mm.
4.5
max
ka
28 min28 min 5.0 max
1.35
max
MBC049
Fig.11 SOD64.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
1996 May 24 7
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