Datasheet BYM56C, BYM56B, BYM56A-40, BYM56E-40, BYM56C-21 Datasheet (Philips)

Page 1
DATA SH EET
Product specification Supersedes data of April 1992
1996 May 24
DISCRETE SEMICONDUCTORS
BYM56 series
Controlled avalanche rectifiers
M3D118
Page 2
1996 May 24 2
Philips Semiconductors Product specification
Controlled avalanche rectifiers BYM56 series
FEATURES
Glass passivated
High maximum operating
temperature
Low leakage current
Excellent stability
Guaranteed avalanche energy
absorption capability
Available in ammo-pack
Also available with preformed leads
for easy insertion.
DESCRIPTION
Rugged glass package, using a high temperature alloyed construction.
This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched.
Fig.1 Simplified outline (SOD64) and symbol.
2/3 page (Datasheet)
MAM104
ka
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
RRM
repetitive peak reverse voltage
BYM56A 200 V BYM56B 400 V BYM56C 600 V BYM56D 800 V BYM56E 1000 V
V
RWM
crest working reverse voltage
BYM56A 200 V BYM56B 400 V BYM56C 600 V BYM56D 800 V BYM56E 1000 V
V
R
continuous reverse voltage
BYM56A 200 V BYM56B 400 V BYM56C 600 V BYM56D 800 V BYM56E 1000 V
I
F(AV)
average forward current Ttp=60°C;
lead length = 10 mm; averaged over any 20 ms period; see Figs 2 and 4
3.5 A
T
amb
=65°C; PCB mounting (see Fig.9); averaged over any 20 ms period; see Figs 3 and 4
1.4 A
I
FSM
non-repetitive peak forward current t = 10 ms half sinewave;
Tj=T
j max
prior to surge;
VR=V
RRMmax
80 A
Page 3
1996 May 24 3
Philips Semiconductors Product specification
Controlled avalanche rectifiers BYM56 series
ELECTRICAL CHARACTERISTICS
T
j
=25°C; unless otherwise specified.
THERMAL CHARACTERISTICS
Note
1. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper 40 µm, see Fig.9. For more information please refer to the
“General Part of associated Handbook”
.
E
RSM
non-repetitive peak reverse avalanche energy
L = 120 mH; Tj=T
j max
prior to
surge; inductive load switched off
20
mJ
T
stg
storage temperature 65 +175 °C
T
j
junction temperature
see Fig.5
65 +175 °C
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
forward voltage IF=3A; Tj=T
j max;
see Fig.6 −−0.95 V
I
F
= 3 A; see Fig.6 −−1.15 V
V
(BR)R
reverse avalanche breakdown voltage
IR= 0.1 mA
BYM56A 225 −−V BYM56B 450 −−V BYM56C 650 −−V BYM56D 900 −−V BYM56E 1100 −−V
I
R
reverse current VR=V
RRMmax
; see Fig.7 −−1µA
V
R=VRRMmax
; Tj= 165 °C;
see Fig.7
−−150 µA
t
rr
reverse recovery time when switched from IF= 0.5 A to
IR= 1 A; measured at IR= 0.25 A; see Fig.10
3
µs
C
d
diode capacitance VR= 0 V; f = 1 MHz; see Fig.8 90
pF
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-tp
thermal resistance from junction to tie-point lead length = 10 mm 25 K/W
R
th j-a
thermal resistance from junction to ambient note 1 75 K/W
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Page 4
1996 May 24 4
Philips Semiconductors Product specification
Controlled avalanche rectifiers BYM56 series
GRAPHICAL DATA
Fig.2 Maximum permissible average forward
current as a function of tie-point temperature (including losses due to reverse leakage).
a =1.57; VR=V
RRMmax
; δ= 0.5.
Lead length 10 mm.
handbook, halfpage
0 200
5.0
0
1.0
MBG037
2.0
3.0
4.0
40 80 120 160
I
F(AV)
(A)
Ttp (
o
C)
Fig.3 Maximum permissible average forward
current as a function of ambient temperature (including losses due to reverse leakage).
a =1.57; VR=V
RRMmax
; δ= 0.5.
Device mounted as shown in Fig.9.
handbook, halfpage
0 200
2.0
0
0.4
MBG058
0.8
1.2
1.6
40 80 120 160
I
F(AV)
(A)
T
amb
(
o
C)
Fig.4 Maximum steady state power dissipation
(forward plus leakage current losses, excluding switching losses) as a function of average forward current.
a=I
F(RMS)/IF(AV)
; VR=V
RRMmax
; δ= 0.5.
handbook, halfpage
012 4
5
0
4
MGC746
3
3
2
1
2.5
2
P
(W)
I
F(AV)
(A)
1.42
a = 3
1.57
Solid line =VR. Dotted line =V
RRM
; δ= 0.5.
Fig.5 Maximum permissible junction temperature
as a function of reverse voltage.
handbook, halfpage
200
0 400 1200
0
MSA873
800
100
V (V)
R
ABCDE
T
j
(°C)
Page 5
1996 May 24 5
Philips Semiconductors Product specification
Controlled avalanche rectifiers BYM56 series
Solid line: Tj=25°C. Dotted line: Tj= 175°C.
Fig.6 Forward current as a function of forward
voltage; maximum values.
handbook, halfpage
0
16
12
4
0
8
MBG046
I
F
(A)
VF (V)
21
Fig.7 Reverse current as a function of junction
temperature; maximum values.
handbook, halfpage
10
3
10
(µA)
I
R
2
10
1
10
1
2000
MGC734
40 80 120 160
Tj (
o
C)
max
VR=V
RRMmax.
Fig.8 Diode capacitance as a function of reverse
voltage; typical values.
f =1 MHz; Tj=25°C.
handbook, halfpage
1
MBG027
10 10
2
10
3
1
10
2
10
C
d
(pF)
VR (V)
Fig.9 Device mounted on a printed-circuit board.
handbook, halfpage
MGA200
3
2
7
50 25
50
Dimensions in mm.
Page 6
1996 May 24 6
Philips Semiconductors Product specification
Controlled avalanche rectifiers BYM56 series
Fig.10 Test circuit and reverse recovery time waveform and definition.
Input impedance oscilloscope: 1 M, 22pF; tr≤ 7ns. Source impedance: 50 ; tr≤ 15ns.
handbook, full pagewidth
10
1
50
25 V
DUT
MAM057
+
t
rr
0.5
0
0.5
1.0
I
F
(A)
I
R
(A)
t
0.25
Page 7
1996 May 24 7
Philips Semiconductors Product specification
Controlled avalanche rectifiers BYM56 series
PACKAGE OUTLINE
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
handbook, full pagewidth
MBC049
4.5
max
ka
28 min28 min 5.0 max
1.35 max
Dimensions in mm.
Fig.11 SOD64.
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