Page 1
DISCRETE SEMICONDUCTORS
DATA SH EET
handbook, 2 columns
M3D118
BYM36 series
Fast soft-recovery
controlled avalanche rectifiers
Product specification
Supersedes data of 1996 May 30
File under Discrete Semiconductors, SC01
1996 Sep 18
Page 2
Philips Semiconductors Product specification
Fast soft-recovery
BYM36 series
controlled avalanche rectifiers
FEATURES
• Glass passivated
• High maximum operating
temperature
DESCRIPTION
Rugged glass SOD64 package, using
a high temperature alloyed
construction.
• Low leakage current
• Excellent stability
ka
• Guaranteed avalanche energy
2/3 page (Datasheet)
absorption capability
• Available in ammo-pack
• Also available with preformed leads
Fig.1 Simplified outline (SOD64) and symbol.
for easy insertion.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
RRM
repetitive peak reverse voltage
BYM36A − 200 V
BYM36B − 400 V
BYM36C − 600 V
BYM36D − 800 V
BYM36E − 1000 V
BYM36F − 1200 V
BYM36G − 1400 V
V
R
continuous reverse voltage
BYM36A − 200 V
BYM36B − 400 V
BYM36C − 600 V
BYM36D − 800 V
BYM36E − 1000 V
BYM36F − 1200 V
BYM36G − 1400 V
I
F(AV)
average forward current Ttp=55°C; lead length = 10 mm;
BYM36A to C − 3.0 A
BYM36D and E − 2.9 A
see Figs 2; 3 and 4
averaged over any 20 ms period;
see also Figs 14; 15 and 16
BYM36F and G − 2.9 A
I
F(AV)
average forward current T
BYM36A to C − 1.25 A
BYM36D and E − 1.20 A
=65°C; PCB mounting (see
amb
Fig.25); see Figs 5; 6 and 7
averaged over any 20 ms period;
see also Figs 14; 15 and 16
BYM36F and G − 1.15 A
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
MAM104
1996 Sep 18 2
Page 3
Philips Semiconductors Product specification
Fast soft-recovery
BYM36 series
controlled avalanche rectifiers
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
FRM
I
FRM
I
FSM
E
RSM
T
stg
T
j
ELECTRICAL CHARACTERISTICS
=25°C unless otherwise specified.
T
j
repetitive peak forward current Ttp=55°C; see Figs 8; 9 and 10
BYM36A to C − 37 A
BYM36D and E − 33 A
BYM36F and G − 27 A
repetitive peak forward current T
=65°C; see Figs 11;12and13
amb
BYM36A to C − 13 A
BYM36D and E − 11 A
BYM36F and G − 10 A
non-repetitive peak forward current t = 10 ms half sine wave; Tj=T
non-repetitive peak reverse
avalanche energy
prior to surge; VR=V
L = 120 mH; Tj=T
inductive load switched off
RRMmax
prior to surge;
j max
j max
− 65 A
− 10 mJ
storage temperature −65 +175 °C
junction temperature see Figs 17 and 18 −65 +175 °C
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
forward voltage IF= 3 A; Tj=T
BYM36A to C −−1.22 V
see Figs 19; 20 and 21
j max
;
BYM36D and E −−1.28 V
BYM36F and G −−1.24 V
V
F
forward voltage IF=3A;
BYM36A to C −−1.60 V
see Figs 19; 20 and 21
BYM36D and E −−1.78 V
BYM36F and G −−1.57 V
V
(BR)R
reverse avalanche breakdown
IR= 0.1 mA
voltage
BYM36A 300 −−V
BYM36B 500 −−V
BYM36C 700 −−V
BYM36D 900 −−V
BYM36E 1100 −−V
BYM36F 1300 −−V
BYM36G 1500 −−V
I
R
reverse current VR=V
V
R=VRRMmax
; see Fig.22 −− 5µA
RRMmax
;
−−150 µA
Tj= 165 °C; see Fig.22
1996 Sep 18 3
Page 4
Philips Semiconductors Product specification
Fast soft-recovery
BYM36 series
controlled avalanche rectifiers
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
t
rr
C
d
dI
R
-------dt
THERMAL CHARACTERISTICS
reverse recovery time when switched from
BYM36A to C −−100 ns
BYM36D and E −−150 ns
BYM36F and G −−250 ns
diode capacitance f = 1 MHz; VR=0V;
BYM36A to C − 85 − pF
BYM36D and E − 75 − pF
BYM36F and G − 65 − pF
maximum slope of reverse recovery
current
BYM36A to C −− 7A/µs
BYM36D and E −− 6A/µs
BYM36F and G −− 5A/µs
IF= 0.5 A to IR=1A;
measured at IR= 0.25 A;
see Fig. 26
see Figs 23 and 24
when switched from
IF= 1 A to VR≥ 30 V and
dIF/dt = −1A/µs;
see Fig.27
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-tp
R
th j-a
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.25.
For more information please refer to the
thermal resistance from junction to tie-point lead length = 10 mm 25 K/W
thermal resistance from junction to ambient note 1 75 K/W
‘General Part of Handbook SC01’
.
1996 Sep 18 4
Page 5
Philips Semiconductors Product specification
Fast soft-recovery
controlled avalanche rectifiers
GRAPHICAL DATA
handbook, halfpage
3
I
F(AV)
(A)
2
1
0
0 200
BYM36A toC
a =1.42; VR=V
Switched mode application.
RRMmax
; δ= 0.5.
lead length (mm)20 15 10
100
o
T ( C)
tp
MSA884
handbook, halfpage
3
I
F(AV)
(A)
2
1
0
0 200
BYM36D andE
a =1.42; VR=V
Switched mode application.
RRMmax
; δ= 0.5.
BYM36 series
lead length (mm)20 15 10
100
o
T ( C)
tp
MSA885
Fig.2 Maximum average forward current as a
function of tie-point temperature (including
losses due to reverse leakage).
4.0
handbook, halfpage
I
F(AV)
(A)
3.2
2.4
1.6
0.8
0
0 200
BYM36F andG
a =1.42; VR=V
Switched mode application.
RRMmax
lead length 10 mm
100
; δ= 0.5.
o
T ( C)
tp
MBD418
Fig.3 Maximum average forward current as a
function of tie-point temperature (including
losses due to reverse leakage).
amb
MLB492
o
2.0
I
F(AV)
(A)
1.6
1.2
0.8
0.4
0
0 200
BYM36A toC
a =1.42; VR=V
Device mounted as shown in Fig.25.
Switched mode application.
RRMmax
; δ= 0.5.
100
T ( C)
Fig.4 Maximum average forward current as a
function of tie-point temperature (including
losses due to reverse leakage).
1996 Sep 18 5
Fig.5 Maximum average forward current as a
function of ambient temperature (including
losses due to reverse leakage).
Page 6
Philips Semiconductors Product specification
Fast soft-recovery
controlled avalanche rectifiers
amb
MLB493
o
2.0
I
F(AV)
(A)
1.6
1.2
0.8
0.4
0
0 200
BYM36D andE
a =1.42; VR=V
Device mounted as shown in Fig.25.
Switched mode application.
RRMmax
100
; δ= 0.5.
T ( C)
BYM36 series
2.0
I
F(AV)
(A)
1.6
1.2
0.8
0.4
0
0 200
BYM36F andG
a =1.42; VR=V
Device mounted as shown in Fig.25.
Switched mode application.
RRMmax
100
; δ= 0.5.
o
T ( C)
amb
MBD417
Fig.6 Maximum average forward current as a
function of ambient temperature (including
losses due to reverse leakage).
40
I
FRM
(A)
30
20
10
0
2
10
BYM36A toC
Ttp=55°C; R
V
RRMmax
= 25 K/W.
th j-tp
during 1 −δ; curves include derating for T
10
1
= 0.05δ
0.1
0.2
0.5
1
11010
at V
j max
RRM
= 600 V.
Fig.7 Maximum average forward current as a
function of ambient temperature (including
losses due to reverse leakage).
MSA890
2103
t (ms)
p
4
10
Fig.8 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
1996 Sep 18 6
Page 7
Philips Semiconductors Product specification
Fast soft-recovery
controlled avalanche rectifiers
40
I
FRM
(A)
30
20
10
0
2
10
BYM36D and E
Ttp=55°C; R
V
RRMmax
= 25 K/W.
th j-tp
during 1 −δ; curves include derating for T
10
1
δ
0.1
0.2
0.5
11010
at V
j max
= 0.05
1
RRM
= 1000 V.
2103
BYM36 series
MSA889
4
t (ms)
p
10
Fig.9 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
30
I
FRM
(A)
25
20
15
10
5
0
2
10
BYM36F and G
Ttp=55°C; R
V
RRMmax
= 25 K/W.
th j-tp
during 1 −δ; curves include derating for T
10
1
= 0.05
δ
0.1
0.2
0.5
1
11010
at V
RRM
= 1400 V.
j max
2103
t (ms)
p
MBD450
4
10
Fig.10 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
1996 Sep 18 7
Page 8
Philips Semiconductors Product specification
Fast soft-recovery
controlled avalanche rectifiers
16
I
FRM
(A)
12
8
4
0
2
10
BYM36A to C
T
=65°C; R
amb
V
during 1 −δ; curves include derating for T
RRMmax
th j-a
= 75 K/W.
10
1
δ
0.1
0.2
0.5
11010
at V
j max
= 0.05
1
RRM
= 600 V.
2103
BYM36 series
MSA887
4
t (ms)
p
10
Fig.11 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
t (ms)
p
MSA888
12
I
FRM
(A)
10
8
6
4
2
0
2
10
BYM36D and E
T
=65°C; R
amb
V
during 1 −δ; curves include derating for T
RRMmax
th j-a
= 75 K/W.
10
= 0.05
δ
0.1
0.2
0.5
1
1
11010
at V
RRM
= 1000 V.
j max
2103
4
10
Fig.12 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
1996 Sep 18 8
Page 9
Philips Semiconductors Product specification
Fast soft-recovery
controlled avalanche rectifiers
12
I
FRM
(A)
10
8
6
4
2
0
2
10
BYM36F and G
T
=65°C; R
amb
V
during 1 −δ; curves include derating for T
RRMmax
th j-a
= 75 K/W.
10
1
δ
0.1
0.2
0.5
11010
at V
j max
= 0.05
1
RRM
= 1400 V.
2103
BYM36 series
MBD445
4
t (ms)
p
10
Fig.13 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
I
F(AV)
1.57
MSA882
1.42
(A)
handbook, halfpage
5
P
(W)
4
3
2
1
0
01 3
BYM36D and E
a=I
F(RMS)/IF(AV)
; VR=V
RRMmax
; δ = 0.5.
a = 3
2.5 2
2
I
F(AV)
1.57
Fig.15 Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function of
average forward current.
5
P
(W)
4
3
2
1
0
01 3
BYM36A to C
a=I
F(RMS)/IF(AV)
; VR=V
RRMmax
; δ = 0.5.
2.5 2
a = 3
2
Fig.14 Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function of
average forward current.
MSA883
1.42
(A)
1996 Sep 18 9
Page 10
Philips Semiconductors Product specification
Fast soft-recovery
controlled avalanche rectifiers
I
F(AV)
MLB560
1.57
1.42
(A)
handbook, halfpage
5
P
(W)
4
3
2
1
0
01 3
BYM36F and G
a=I
F(RMS)/IF(AV)
; VR=V
RRMmax
a = 3
; δ = 0.5.
2.5 2
2
Fig.16 Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function of
average forward current.
BYM36 series
V (V)
R
MSA873
200
handbook, halfpage
T
j
(°C)
100
ABCDE
0
0 400 1200
BYM36A to E
Solid line = VR.
Dotted line = V
RRM
; δ = 0.5.
800
Fig.17 Maximum permissible junction temperature
as a function of reverse voltage.
V (V)
R
MLB601
200
handbook, halfpage
T
j
o
( C)
100
0
0 2000
BYM36F and G
Solid line = VR.
Dotted line = V
RRM
FG
1000
; δ = 0.5.
Fig.18 Maximum permissible junction temperature
as a function of reverse voltage.
12
handbook, halfpage
I
F
(A)
8
4
0
0
BYM36A to C
Dotted line: Tj= 175 °C.
Solid line: Tj=25°C.
12
V
(V)
F
Fig.19 Forward current as a function of forward
voltage; maximum values.
MSA880
3
1996 Sep 18 10
Page 11
Philips Semiconductors Product specification
Fast soft-recovery
controlled avalanche rectifiers
12
andbook, halfpage
I
F
(A)
8
4
0
0
BYM36D and E.
Dotted line: Tj= 175 °C.
Solid line: Tj=25°C.
12 4
3
VF (V)
MSA881
12
andbook, halfpage
I
F
(A)
8
4
0
0
BYM36F and G.
Dotted line: Tj= 175 °C.
Solid line: Tj=25°C.
BYM36 series
MBD425
123
VF (V)
Fig.20 Forward current as a function of forward
voltage; maximum values.
3
10
handbook, halfpage
I
R
(µA)
2
10
10
1
0 100 200
VR=V
RRMmax
.
Tj (°C)
MGC550
Fig.21 Forward current as a function of forward
voltage; maximum values.
V (V)
R
MSA886
2
10
C
d
(pF)
10
1
1
BYM36A to E
f = 1 MHz; Tj=25°C.
BYM36A,B,C
BYM36D,E
10 10
2
3
10
Fig.22 Reverse current as a function of junction
temperature; maximum values.
1996 Sep 18 11
Fig.23 Diode capacitance as a function of reverse
voltage, typical values.
Page 12
Philips Semiconductors Product specification
Fast soft-recovery
controlled avalanche rectifiers
2
10
C
d
(pF)
10
1
1
BYM36F and G
f = 1 MHz; Tj=25°C.
10 10
2
Fig.24 Diode capacitance as a function of reverse
voltage, typical values.
MBD438
3
10
V (V)
4
10
R
BYM36 series
handbook, halfpage
Dimensions in mm.
Fig.25 Device mounted on a printed-circuit board.
50
25
7
50
2
3
MGA200
handbook, full pagewidth
10 Ω
Input impedance oscilloscope: 1 MΩ, 22 pF; tr≤< 7 ns.
Source impedance: 50 Ω; tr≤ 15 ns.
25 V
+
50 Ω
DUT
1 Ω
I
(A)
0.25
R
Fig.26 Test circuit and reverse recovery time waveform and definition.
1996 Sep 18 12
I
(A)
0.5
0.5
F
t
rr
0
1
t
MAM057
Page 13
Philips Semiconductors Product specification
Fast soft-recovery
controlled avalanche rectifiers
I
ndbook, halfpage
F
dI
F
dt
t
rr
dI
R
dt
I
R
10%
100%
BYM36 series
t
MGC499
Fig.27 Reverse recovery definitions.
1996 Sep 18 13
Page 14
Philips Semiconductors Product specification
Fast soft-recovery
controlled avalanche rectifiers
PACKAGE OUTLINE
handbook, full pagewidth
4.5
max
Dimensions in mm.
The marking band indicates the cathode.
BYM36 series
ka
28 min28 min 5.0 max
Fig.28 SOD64.
1.35
max
MBC049
DEFINITIONS
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Sep 18 14
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