Datasheet BYM36E-40, BYM36C-41, BYM36C-40, BYM36C-20 Datasheet (Philips)

Page 1
DATA SH EET
Product specification Supersedes data of 1996 May 30
1996 Sep 18
DISCRETE SEMICONDUCTORS
BYM36 series
Fast soft-recovery controlled avalanche rectifiers
handbook, 2 columns
M3D118
Page 2
1996 Sep 18 2
Philips Semiconductors Product specification
Fast soft-recovery controlled avalanche rectifiers
BYM36 series
FEATURES
Glass passivated
High maximum operating
temperature
Low leakage current
Excellent stability
Guaranteed avalanche energy
absorption capability
Available in ammo-pack
Also available with preformed leads
for easy insertion.
DESCRIPTION
Rugged glass SOD64 package, using a high temperature alloyed construction.
This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched.
Fig.1 Simplified outline (SOD64) and symbol.
2/3 page (Datasheet)
MAM104
ka
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
RRM
repetitive peak reverse voltage
BYM36A 200 V BYM36B 400 V BYM36C 600 V BYM36D 800 V BYM36E 1000 V BYM36F 1200 V BYM36G 1400 V
V
R
continuous reverse voltage
BYM36A 200 V BYM36B 400 V BYM36C 600 V BYM36D 800 V BYM36E 1000 V BYM36F 1200 V BYM36G 1400 V
I
F(AV)
average forward current Ttp=55°C; lead length = 10 mm;
see Figs 2; 3 and 4 averaged over any 20 ms period; see also Figs 14; 15 and 16
BYM36A to C 3.0 A BYM36D and E 2.9 A BYM36F and G 2.9 A
I
F(AV)
average forward current T
amb
=65°C; PCB mounting (see Fig.25); see Figs 5; 6 and 7 averaged over any 20 ms period; see also Figs 14; 15 and 16
BYM36A to C 1.25 A BYM36D and E 1.20 A BYM36F and G 1.15 A
Page 3
1996 Sep 18 3
Philips Semiconductors Product specification
Fast soft-recovery controlled avalanche rectifiers
BYM36 series
ELECTRICAL CHARACTERISTICS
T
j
=25°C unless otherwise specified.
I
FRM
repetitive peak forward current Ttp=55°C; see Figs 8; 9 and 10
BYM36A to C 37 A BYM36D and E 33 A BYM36F and G 27 A
I
FRM
repetitive peak forward current T
amb
=65°C; see Figs 11;12and13
BYM36A to C 13 A BYM36D and E 11 A BYM36F and G 10 A
I
FSM
non-repetitive peak forward current t = 10 ms half sine wave; Tj=T
j max
prior to surge; VR=V
RRMmax
65 A
E
RSM
non-repetitive peak reverse avalanche energy
L = 120 mH; Tj=T
j max
prior to surge;
inductive load switched off
10 mJ
T
stg
storage temperature 65 +175 °C
T
j
junction temperature see Figs 17 and 18 65 +175 °C
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
forward voltage IF= 3 A; Tj=T
j max
;
see Figs 19; 20 and 21
BYM36A to C −−1.22 V BYM36D and E −−1.28 V BYM36F and G −−1.24 V
V
F
forward voltage IF=3A;
see Figs 19; 20 and 21
BYM36A to C −−1.60 V BYM36D and E −−1.78 V BYM36F and G −−1.57 V
V
(BR)R
reverse avalanche breakdown voltage
IR= 0.1 mA
BYM36A 300 −−V BYM36B 500 −−V BYM36C 700 −−V BYM36D 900 −−V BYM36E 1100 −−V BYM36F 1300 −−V BYM36G 1500 −−V
I
R
reverse current VR=V
RRMmax
; see Fig.22 −− 5µA
V
R=VRRMmax
;
Tj= 165 °C; see Fig.22
−−150 µA
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Page 4
1996 Sep 18 4
Philips Semiconductors Product specification
Fast soft-recovery controlled avalanche rectifiers
BYM36 series
THERMAL CHARACTERISTICS
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer 40 µm, see Fig.25. For more information please refer to the
“General Part of associated Handbook”
.
t
rr
reverse recovery time when switched from
IF= 0.5 A to IR=1A; measured at IR= 0.25 A; see Fig. 26
BYM36A to C −−100 ns BYM36D and E −−150 ns BYM36F and G −−250 ns
C
d
diode capacitance f = 1 MHz; VR=0V;
see Figs 23 and 24
BYM36A to C 85 pF BYM36D and E 75 pF BYM36F and G 65 pF
maximum slope of reverse recovery current
when switched from I
F
= 1 A to VR≥ 30 V and dIF/dt = 1A/µs; see Fig.27
BYM36A to C −− 7A/µs BYM36D and E −− 6A/µs BYM36F and G −− 5A/µs
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-tp
thermal resistance from junction to tie-point lead length = 10 mm 25 K/W
R
th j-a
thermal resistance from junction to ambient note 1 75 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
dI
R
dt
--------
Page 5
1996 Sep 18 5
Philips Semiconductors Product specification
Fast soft-recovery controlled avalanche rectifiers
BYM36 series
GRAPHICAL DATA
BYM36A toC
a =1.42; VR=V
RRMmax
; δ= 0.5.
Switched mode application.
Fig.2 Maximum average forward current as a
function of tie-point temperature (including losses due to reverse leakage).
handbook, halfpage
0 200
0
MSA884
100
T ( C)
o
I
F(AV)
(A)
3
1
2
lead length (mm)20 15 10
tp
BYM36D andE
a =1.42; VR=V
RRMmax
; δ= 0.5.
Switched mode application.
Fig.3 Maximum average forward current as a
function of tie-point temperature (including losses due to reverse leakage).
handbook, halfpage
0 200
0
MSA885
100
I
F(AV)
(A)
3
1
2
lead length (mm)20 15 10
T ( C)
o
tp
BYM36F andG
a =1.42; VR=V
RRMmax
; δ= 0.5.
Switched mode application.
Fig.4 Maximum average forward current as a
function of tie-point temperature (including losses due to reverse leakage).
handbook, halfpage
0 200
4.0
0
0.8
3.2
MBD418
100
I
F(AV)
(A)
T ( C)
o
tp
1.6
2.4
lead length 10 mm
BYM36A toC
a =1.42; VR=V
RRMmax
; δ= 0.5. Device mounted as shown in Fig.25. Switched mode application.
Fig.5 Maximum average forward current as a
function of ambient temperature (including losses due to reverse leakage).
0 200
2.0
0
0.4
1.6
MLB492
100
I
F(AV)
(A)
T ( C)
o
amb
0.8
1.2
Page 6
1996 Sep 18 6
Philips Semiconductors Product specification
Fast soft-recovery controlled avalanche rectifiers
BYM36 series
BYM36D andE
a =1.42; VR=V
RRMmax
; δ= 0.5. Device mounted as shown in Fig.25. Switched mode application.
Fig.6 Maximum average forward current as a
function of ambient temperature (including losses due to reverse leakage).
0 200
2.0
0
0.4
1.6
MLB493
100
I
F(AV)
(A)
T ( C)
o
amb
0.8
1.2
BYM36F andG
a =1.42; VR=V
RRMmax
; δ= 0.5. Device mounted as shown in Fig.25. Switched mode application.
Fig.7 Maximum average forward current as a
function of ambient temperature (including losses due to reverse leakage).
0 200
2.0
0
0.4
1.6
MBD417
100
I
F(AV)
(A)
T ( C)
o
amb
0.8
1.2
Fig.8 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
BYM36A toC
Ttp=55°C; R
th j-tp
= 25 K/W.
V
RRMmax
during 1 −δ; curves include derating for T
j max
at V
RRM
= 600 V.
0
20
10
2
10
1
11010
2103
10
4
MSA890
40
10
30
t (ms)
p
I
FRM (A)
= 0.05δ
0.1
0.2
0.5
1
Page 7
1996 Sep 18 7
Philips Semiconductors Product specification
Fast soft-recovery controlled avalanche rectifiers
BYM36 series
BYM36D and E
Ttp=55°C; R
th j-tp
= 25 K/W.
V
RRMmax
during 1 −δ; curves include derating for T
j max
at V
RRM
= 1000 V.
Fig.9 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
0
20
10
2
10
1
11010
2103
10
4
MSA889
40
10
30
t (ms)
p
I
FRM (A)
= 0.05
δ
0.1
0.2
0.5
1
BYM36F and G
Ttp=55°C; R
th j-tp
= 25 K/W.
V
RRMmax
during 1 −δ; curves include derating for T
j max
at V
RRM
= 1400 V.
Fig.10 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
30
0
10
10
2
11010
2103
10
4
MBD450
20
t (ms)
p
10
1
I
FRM (A)
5
15
25
= 0.05
δ
0.1
0.2
0.5
1
Page 8
1996 Sep 18 8
Philips Semiconductors Product specification
Fast soft-recovery controlled avalanche rectifiers
BYM36 series
Fig.11 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
BYM36A to C
T
amb
=65°C; R
th j-a
= 75 K/W.
V
RRMmax
during 1 −δ; curves include derating for T
j max
at V
RRM
= 600 V.
0
8
10
2
10
1
11010
2103
10
4
MSA887
16
4
12
t (ms)
p
I
FRM (A)
= 0.05
δ
0.1
0.2
0.5
1
Fig.12 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
BYM36D and E
T
amb
=65°C; R
th j-a
= 75 K/W.
V
RRMmax
during 1 −δ; curves include derating for T
j max
at V
RRM
= 1000 V.
0
10
2
10
1
11010
2103
10
4
MSA888
t (ms)
p
I
FRM (A)
12
4
8
2
6
10
1
= 0.05
δ
0.1
0.2
0.5
Page 9
1996 Sep 18 9
Philips Semiconductors Product specification
Fast soft-recovery controlled avalanche rectifiers
BYM36 series
Fig.13 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
BYM36F and G
T
amb
=65°C; R
th j-a
= 75 K/W.
V
RRMmax
during 1 −δ; curves include derating for T
j max
at V
RRM
= 1400 V.
12
0
4
10
2
11010
2103
10
4
MBD445
8
t (ms)
p
10
1
I
FRM (A)
2
6
10
= 0.05
δ
0.1
0.2
0.5
1
Fig.14 Maximum steady state power dissipation
(forward plus leakage current losses, excluding switching losses) as a function of average forward current.
BYM36A to C
a=I
F(RMS)/IF(AV)
; VR=V
RRMmax
; δ = 0.5.
5
01 3
0
MSA882
2
1
2
3
4
I
F(AV)
(A)
P
(W)
a = 3
2.5 2
1.42
1.57
BYM36D and E
a=I
F(RMS)/IF(AV)
; VR=V
RRMmax
; δ = 0.5.
Fig.15 Maximum steady state power dissipation
(forward plus leakage current losses, excluding switching losses) as a function of average forward current.
handbook, halfpage
5
01 3
0
MSA883
2
1
2
3
4
I
F(AV)
(A)
P
(W)
a = 3
2.5 2
1.42
1.57
Page 10
1996 Sep 18 10
Philips Semiconductors Product specification
Fast soft-recovery controlled avalanche rectifiers
BYM36 series
BYM36F and G
a=I
F(RMS)/IF(AV)
; VR=V
RRMmax
; δ = 0.5.
Fig.16 Maximum steady state power dissipation
(forward plus leakage current losses, excluding switching losses) as a function of average forward current.
handbook, halfpage
5
01 3
0
MLB560
2
1
2
3
4
I
F(AV)
(A)
P
(W)
a = 3
2.5 2
1.42
1.57
Fig.17 Maximum permissible junction temperature
as a function of reverse voltage.
BYM36A to E
Solid line = VR. Dotted line = V
RRM
; δ = 0.5.
handbook, halfpage
200
0 400 1200
0
MSA873
800
100
V (V)
R
ABCDE
T
j
(°C)
Fig.18 Maximum permissible junction temperature
as a function of reverse voltage.
BYM36F and G
Solid line = VR. Dotted line = V
RRM
; δ = 0.5.
handbook, halfpage
200
0 2000
0
MLB601
1000
100
V (V)
R
T
j
( C)
o
FG
Fig.19 Forward current as a function of forward
voltage; maximum values.
BYM36A to C
Dotted line: Tj= 175 °C. Solid line: Tj=25°C.
handbook, halfpage
0
12
I
F
8
(A)
4
0
12
V
F
(V)
3
MSA880
Page 11
1996 Sep 18 11
Philips Semiconductors Product specification
Fast soft-recovery controlled avalanche rectifiers
BYM36 series
Fig.20 Forward current as a function of forward
voltage; maximum values.
BYM36D and E.
Dotted line: Tj= 175 °C. Solid line: Tj=25°C.
andbook, halfpage
0
12
8
4
0
12 4
MSA881
3
I
F
(A)
VF (V)
Fig.21 Forward current as a function of forward
voltage; maximum values.
BYM36F and G.
Dotted line: Tj= 175 °C. Solid line: Tj=25°C.
andbook, halfpage
0
12
8
4
0
123
MBD425
I
F
(A)
VF (V)
Fig.22 Reverse current as a function of junction
temperature; maximum values.
handbook, halfpage
MGC550
0 100 200
10
3
10
2
10
1
(µA)
I
R
Tj (°C)
VR=V
RRMmax
.
BYM36A to E
f = 1 MHz; Tj=25°C.
Fig.23 Diode capacitance as a function of reverse
voltage, typical values.
1
MSA886
10 10
2
10
3
1
10
2
10
V (V)
R
C
d
(pF)
BYM36A,B,C
BYM36D,E
Page 12
1996 Sep 18 12
Philips Semiconductors Product specification
Fast soft-recovery controlled avalanche rectifiers
BYM36 series
BYM36F and G
f = 1 MHz; Tj=25°C.
Fig.24 Diode capacitance as a function of reverse
voltage, typical values.
1
MBD438
10 10
2
10
4
1
10
2
10
V (V)
R
C
d
(pF)
10
3
Fig.25 Device mounted on a printed-circuit board.
Dimensions in mm.
handbook, halfpage
MGA200
3
2
7
50 25
50
handbook, full pagewidth
10
1
50
25 V
DUT
MAM057
+
t
rr
0.5
0
0.5
1
I
F
(A)
I
R
(A)
t
0.25
Fig.26 Test circuit and reverse recovery time waveform and definition.
Input impedance oscilloscope: 1 M, 22 pF; tr≤< 7 ns. Source impedance: 50 ; tr≤ 15 ns.
Page 13
1996 Sep 18 13
Philips Semiconductors Product specification
Fast soft-recovery controlled avalanche rectifiers
BYM36 series
Fig.27 Reverse recovery definitions.
ndbook, halfpage
10%
100%
dI
dt
t
t
rr
I
F
I
R
MGC499
F
dI
dt
R
Page 14
1996 Sep 18 14
Philips Semiconductors Product specification
Fast soft-recovery controlled avalanche rectifiers
BYM36 series
PACKAGE OUTLINE
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Fig.28 SOD64.
Dimensions in mm. The marking band indicates the cathode.
handbook, full pagewidth
MBC049
4.5
max
ka
28 min28 min 5.0 max
1.35 max
Loading...