Page 1
DISCRETE SEMICONDUCTORS
DATA SH EET
handbook, 2 columns
M3D118
BYM26 series
Fast soft-recovery
controlled avalanche rectifiers
Product specification
Supersedes data of February 1994
File under Discrete Semiconductors, SC01
1996 May 24
Page 2
Philips Semiconductors Product specification
Fast soft-recovery
BYM26 series
controlled avalanche rectifiers
FEATURES
• Glass passivated
• High maximum operating
DESCRIPTION
Rugged glass SOD64 package,
using a high temperature alloyed
temperature
• Low leakage current
• Excellent stability
ka
• Guaranteed avalanche energy
2/3 page (Datasheet)
absorption capability
• Available in ammo-pack
• Also available with preformed leads
for easy insertion.
Fig.1 Simplified outline (SOD64) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
RRM
repetitive peak reverse voltage
BYM26A − 200 V
BYM26B − 400 V
BYM26C − 600 V
BYM26D − 800 V
BYM26E − 1000 V
BYM26F − 1200 V
BYM26G − 1400 V
V
R
continuous reverse voltage
BYM26A − 200 V
BYM26B − 400 V
BYM26C − 600 V
BYM26D − 800 V
BYM26E − 1000 V
BYM26F − 1200 V
BYM26G − 1400 V
I
F(AV)
I
F(AV)
average forward current Ttp=55°C; lead length = 10 mm;
BYM26A to E − 2.30 A
BYM26F and G − 2.40 A
average forward current T
BYM26A to E − 1.05 A
BYM26F and G − 1.00 A
see Figs 2 and 3;
averaged over any 20 ms period;
see also Figs 10 and 11
=65°C; PCB mounting (see
amb
Fig.19); see Figs 4 and 5;
averaged over any 20 ms period;
see also Figs 10 and 11
construction. This package is
hermetically sealed and fatigue free
as coefficients of expansion of all
used parts are matched.
MAM104
1996 May 24 2
Page 3
Philips Semiconductors Product specification
Fast soft-recovery
BYM26 series
controlled avalanche rectifiers
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
FRM
I
FRM
I
FSM
E
RSM
T
stg
T
j
ELECTRICAL CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
V
F
V
(BR)R
I
R
t
rr
repetitive peak forward current Ttp=55°C; see Figs 6 and 7
BYM26A to E − 19 A
BYM26F and G − 21 A
repetitive peak forward current T
=65°C; see Figs 8 and 9
amb
BYM26A to E − 8.0 A
BYM26F and G − 8.5 A
non-repetitive peak forward current t = 10 ms half sine wave; Tj=T
non-repetitive peak reverse
avalanche energy
prior to surge; VR=V
L = 120 mH; Tj=T
inductive load switched off
RRMmax
prior to surge;
j max
j max
− 45 A
− 10 mJ
storage temperature −65 +175 °C
junction temperature see Figs 12 and 13 −65 +175 °C
forward voltage IF= 2 A; Tj=T
BYM26A to E −−1.34 V
see Figs 14 and 15
j max
;
BYM26F and G −−1.34 V
forward voltage IF=2A;
BYM26A to E −−2.65 V
see Figs 14 and 15
BYM26F and G −−2.30 V
reverse avalanche breakdown
IR= 0.1 mA
voltage
BYM26A 300 −−V
BYM26B 500 −−V
BYM26C 700 −−V
BYM26D 900 −−V
BYM26E 1100 −−V
BYM26F 1300 −−V
BYM26G 1500 −−V
reverse current VR=V
RRMmax
;
−−10 µA
see Fig.16
V
R=VRRMmax
;
−−150 µA
Tj= 165 °C; see Fig.16
reverse recovery time when switched from
BYM26A to C −−30 ns
BYM26D and E −−75 ns
IF= 0.5 A to IR=1A;
measured at IR= 0.25 A;
see Fig.20
BYM26F and G −−150 ns
1996 May 24 3
Page 4
Philips Semiconductors Product specification
Fast soft-recovery
BYM26 series
controlled avalanche rectifiers
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
C
d
dI
R
-------dt
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-tp
R
th j-a
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.19.
For more information please refer to the
diode capacitance f = 1 MHz; VR=0V;
BYM26A to C − 85 − pF
BYM26D and E − 75 − pF
BYM26F and G − 65 − pF
maximum slope of reverse recovery
current
BYM26A to C −− 7A/µs
BYM26D and E −− 6A/µs
BYM26F and G −− 5A/µs
thermal resistance from junction to tie-point lead length = 10 mm 25 K/W
thermal resistance from junction to ambient note 1 75 K/W
see Figs 17 and 18
when switched from
IF= 1 A to VR≥ 30 V and
dIF/dt = −1A/µs;
see Fig.21
‘General Part of Handbook SC01’.
1996 May 24 4
Page 5
Philips Semiconductors Product specification
Fast soft-recovery
controlled avalanche rectifiers
GRAPHICAL DATA
2.4
handbook, halfpage
I
F(AV)
(A)
1.8
1.2
0.6
0
0 200
BYM26A toE
a =1.42; VR=V
Switched mode application.
RRMmax
; δ= 0.5.
100
lead length (mm)20 15 10
o
T ( C)
tp
MSA875
handbook, halfpage
3
I
F(AV)
(A)
2
1
0
0 200
BYM26F andG
a =1.42; VR=V
Switched mode application.
RRMmax
lead length 10 mm
; δ= 0.5.
BYM26 series
100
o
T ( C)
tp
MBD421
Fig.2 Maximum average forward current as a
function of tie-point temperature (including
losses due to reverse leakage).
2.0
handbook, halfpage
I
F(AV)
(A)
1.6
1.2
0.8
0.4
0
0 200
BYM26A toE
a =1.42; VR=V
Device mounted as shown in Fig.19.
Switched mode application.
RRMmax
; δ= 0.5.
100
o
T ( C)
amb
MLB490
Fig.3 Maximum average forward current as a
function of tie-point temperature (including
losses due to reverse leakage).
2.0
handbook, halfpage
I
F(AV)
(A)
1.6
1.2
0.8
0.4
0
0 200
BYM26F andG
a =1.42; VR=V
Device mounted as shown in Fig.19.
Switched mode application.
RRMmax
; δ= 0.5.
100
o
T ( C)
amb
MBD416
Fig.4 Maximum average forward current as a
function of ambient temperature (including
losses due to reverse leakage).
1996 May 24 5
Fig.5 Maximum average forward current as a
function of ambient temperature (including
losses due to reverse leakage).
Page 6
Philips Semiconductors Product specification
Fast soft-recovery
controlled avalanche rectifiers
20
I
FRM
(A)
16
12
8
4
0
2
10
BYM26A toE
Ttp=55°C; R
V
RRMmax
= 25 K/W.
th j-tp
during 1 −δ; curves include derating for T
10
1
= 0.05
δ
0.1
0.2
0.5
1
11010
at V
j max
RRM
= 1000 V.
2103
BYM26 series
MSA879
4
t (ms)
p
10
Fig.6 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
25
I
FRM
(A)
20
15
10
5
0
2
10
BYM26F and G
Ttp=55°C; R
V
RRMmax
= 25 K/W.
th j-tp
during 1 −δ; curves include derating for T
10
1
= 0.05
δ
0.1
0.2
0.5
1
11010
at V
RRM
= 1400 V.
j max
2103
t (ms)
p
MBD449
4
10
Fig.7 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
1996 May 24 6
Page 7
Philips Semiconductors Product specification
Fast soft-recovery
controlled avalanche rectifiers
10
I
FRM
(A)
8
6
4
2
0
2
10
BYM26A to E
T
=65°C; R
amb
V
during 1 −δ; curves include derating for T
RRMmax
th j-a
= 75 K/W.
10
1
= 0.05
δ
0.1
0.2
0.5
1
11010
at V
j max
RRM
= 1000 V.
2103
BYM26 series
MSA878
4
t (ms)
p
10
Fig.8 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
10
I
FRM
(A)
8
6
4
2
0
2
10
BYM26F and G
T
=65°C; R
amb
V
RRMmax
th j-a
during 1 −δ; curves include derating for T
10
= 75 K/W.
1
= 0.05
δ
0.1
0.2
0.5
1
11010
at V
RRM
= 1400 V.
j max
2103
t (ms)
p
MBD443
4
10
Fig.9 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
1996 May 24 7
Page 8
Philips Semiconductors Product specification
Fast soft-recovery
controlled avalanche rectifiers
1.8
I
F(AV)
MSA876
(A)
5
P
(W)
4
3
2
1
0
0 0.6 2.4
BYM26A to E
a=I
F(RMS)/IF(AV)
Switched mode application.
; VR=V
a = 3 2.5 2 1.57 1.42
1.2
; δ = 0.5.
RRMmax
5
P
(W)
4
3
2
1
0
0
BYM26F and G
a=I
F(RMS)/IF(AV)
Switched mode application.
; VR=V
RRMmax
BYM26 series
MBD430
a = 3 2.5 2 1.57 1.42
1.2
; δ = 0.5.
1.8
I (A)
F(AV)
2.40.6
Fig.10 Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function of
average forward current.
V (V)
R
MSA873
200
handbook, halfpage
T
j
(°C)
100
0
0 400 1200
ABCDE
800
Fig.11 Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function of
average forward current.
V (V)
R
MLB601
200
handbook, halfpage
T
j
o
( C)
100
0
0 2000
FG
1000
BYM26A to E
Solid line = VR.
Dotted line = V
RRM
; δ = 0.5.
Fig.12 Maximum permissible junction temperature
as a function of reverse voltage.
1996 May 24 8
BYM26F and G
Solid line = VR.
Dotted line = V
RRM
; δ = 0.5.
Fig.13 Maximum permissible junction temperature
as a function of reverse voltage.
Page 9
Philips Semiconductors Product specification
Fast soft-recovery
controlled avalanche rectifiers
10
handbook, halfpage
I
F
(A)
8
6
4
2
0
024
BYM26A to E
Dotted line: Tj= 175 °C.
Solid line: Tj=25°C.
V
(V)
F
MSA877
BYM26 series
10
handbook, halfpage
I
F
(A)
8
6
4
2
6
0
02
BYM26F and G
Dotted line: Tj= 175 °C.
Solid line: Tj=25°C.
V
MBD426
(V)
F
4
Fig.14 Forward current as a function of forward
voltage; maximum values.
3
10
handbook, halfpage
I
R
(µA)
2
10
10
1
0 100 200
VR=V
RRMmax
.
MGC549
Tj (°C)
Fig.15 Forward current as a function of forward
voltage; maximum values.
V (V)
R
MSA874
2
10
handbook, halfpage
C
d
(pF)
10
1
1
BYM26A to E
f = 1 MHz; Tj=25°C.
BYM26A,B,C
BYM26D,E
10 10
2
3
10
Fig.16 Reverse current as a function of junction
temperature; maximum values.
1996 May 24 9
Fig.17 Diode capacitance as a function of reverse
voltage; typical values.
Page 10
Philips Semiconductors Product specification
Fast soft-recovery
controlled avalanche rectifiers
2
10
handbook, halfpage
C
d
(pF)
10
1
1
BYM26F and G
f = 1 MHz; Tj=25°C.
10 10
Fig.18 Diode capacitance as a function of reverse
voltage; typical values. Fig.19 Device mounted on a printed-circuit board.
MBD435
2
V (V)
R
BYM26 series
handbook, halfpage
3
10
Dimensions in mm.
50
25
7
50
2
3
MGA200
handbook, full pagewidth
10 Ω
Input impedance oscilloscope: 1 MΩ, 22 pF; tr≤ 7 ns.
Source impedance: 50 Ω; tr≤ 15 ns.
25 V
+
50 Ω
DUT
1 Ω
I
(A)
0.25
R
Fig.20 Test circuit and reverse recovery time waveform and definition.
1996 May 24 10
I
(A)
0.5
0.5
F
t
rr
0
1
t
MAM057
Page 11
Philips Semiconductors Product specification
Fast soft-recovery
controlled avalanche rectifiers
I
ndbook, halfpage
F
dI
F
dt
t
rr
dI
R
dt
I
R
10%
100%
BYM26 series
t
MGC499
Fig.21 Reverse recovery definitions.
1996 May 24 11
Page 12
Philips Semiconductors Product specification
Fast soft-recovery
controlled avalanche rectifiers
PACKAGE OUTLINE
handbook, full pagewidth
4.5
max
Dimensions in mm.
The marking band indicates the cathode.
BYM26 series
ka
28 min28 min 5.0 max
Fig.22 SOD64.
1.35
max
MBC049
DEFINITIONS
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 May 24 12
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