Datasheet BYG85B Datasheet (Philips)

DISCRETE SEMICONDUCTORS

DATA SH EET

ook, halfpage

M3D168

BYG85B

Fast soft-recovery rectifier

Product specification

1998 Nov 25

Philips Semiconductors Product specification

Fast soft-recovery rectifier BYG85B

FEATURES

• Glass passivated

• High maximum operating

DESCRIPTION

DO-214AC surface mountable
package with glass passivated chip.

The well-defined void-free case is of a
transfer-moulded thermo-setting
plastic.

temperature

• Low leakage current

• Excellent stability

• UL 94V-O classified plastic

handbook, 4 columns

ka

cathode
band

package

• Shipped in 12 mm embossed tape.

Top view Side view

MSA474

Fig.1 Simplified outline (DO-214AC; SOD106) and symbol.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

RRM

V

R

I

F(AV)

repetitive peak reverse voltage − 100 V
continuous reverse voltage − 100 V
average forward current Ttp= 100 °C; averaged over any

− 2.5 A

20 ms period; see Figs 2 and 7

I

F(AV)

average forward current T

=60°C; AL2O3 PCB mounting

amb

− 1.3 A
(see Fig.11); averaged over any
20 ms period; see Fig.3

I

F(AV)

average forward current T

=60°C; epoxy PCB mounting

amb

− 0.98 A
(see Fig.11); averaged over any
20 ms period; see Fig.3

I

FRM

I

FRM

repetitive peak forward current Ttp= 100 °C; see Fig.3 − 23 A
repetitive peak forward current T

=60°C; AL2O3PCB mounting;

amb

− 12 A
see Fig.5

I

FRM

repetitive peak forward current T

=60°C; epoxy PCB mounting;

amb

− 8.5 A
see Fig.6

I

FSM

T
T

stg
j

non-repetitive peak forward current t = 10 ms half sine wave; Tj=T

prior to surge; VR=V

RRMmax

j max

storage temperature −65 +175 °C
junction temperature −65 +175 °C

− 35 A

1998 Nov 25 2

Philips Semiconductors Product specification

Fast soft-recovery rectifier BYG85B

ELECTRICAL CHARACTERISTICS

=25°C unless otherwise specified.

T

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

F

V

(BR)R

I

R

t

rr

C

d

dI

R

-------­dt

forward voltage IF= 2 A; Tj=T

I

= 2 A; see Fig.8 −−0.98 V

F

reverse avalanche

IR= 0.1 mA 120 −−V

breakdown voltage
reverse current VR=V

RRMmax

V

R=VRRMmax

see Fig.9

reverse recovery time when switched from IF= 0.5 A to

IR= 1 A; measured at IR= 0.25 A;

see Fig.13
diode capacitance f = 1 MHz; VR= 0; see Fig.10 − 110 − pF
maximum slope of reverse

recovery current

when switched from I

VR≥30 V and dIF/dt = −1A/µs;

see Fig.12

; see Fig.8 −−0.78 V

j max

; see Fig.9 −− 5µA
; Tj = 165 °C;

−−150 µA

−−12.5 ns

=1A to

F

−− 2A/µs

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R
R

th j-tp
th j-a

thermal resistance from junction to tie-point 25 K/W
thermal resistance from junction to ambient note 1 100 K/W

note 2 150 K/W

Notes

1. Device mounted on Al

printed-circuit board, 0.7 mm thick; thickness of copper ≥35 µm, see Fig.11.

2O3

2. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper ≥40 µm, see Fig.11.
For more information please refer to the

‘General Part of associated Handbook’

.

1998 Nov 25 3

Philips Semiconductors Product specification

Fast soft-recovery rectifier BYG85B

GRAPHICAL DATA

handbook, halfpage

5

I

F(AV)

(A)

4

3

2

1

0

0 40 80 200160

a =1.42; VR=V
Switched mode application.

RRMmax

; δ= 0.5.

120

Ttp (°C)

Fig.2 Maximum permissible average forward

current as a function of tie-point temperature
(including losses due to reverse leakage).

MBK210

2.0

handbook, halfpage

I

F(AV)

(A)

1.6

1.2

0.8

0.4

0

0 40 80 200160

a =1.42; VR=V
Device mounted as shown in Fig.11.
1: epoxy PCB 2: Al

RRMmax

(1)

; δ= 0.5; Switched mode application;

PCB.

2O3

120

(2)

T

amb

Fig.3 Maximum permissible average forward

current as a function of ambient temperature
(including losses due to reverse leakage).

MBK211

(°C)

30

handbook, full pagewidth

I

FRM

(A)

20

10

0

−2

10

Ttp= 100°C; R
V

RRMmax

th j-tp

during 1 -δ; curves include derating for T

= 25K/W.

δ = 0.05

0.1

0.2

0.5

1.0

−1

10

j max

1

at V

RRM

= 100 V.

10 10

2

3

10

tp (ms)

Fig.4 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.

MBK212

4

10

1998 Nov 25 4

Philips Semiconductors Product specification

Fast soft-recovery rectifier BYG85B

20

handbook, full pagewidth

I

FRM

(A)

16

δ = 0.05

12

8

0.1

0.2

4

0.5

1.0

0

−2

10

T

=60°C; R

amb

V

during 1 - δ; curves include derating for T

RRMmax

= 100 K/W.

th j-a

−1

10

j max

1

at V

RRM

10 10

= 100 V.

2

3

10

Fig.5 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.

tp (ms)

MBK213

4

10

10

handbook, full pagewidth

I

FRM

(A)

δ = 0.05

8

6

0.1

4

0.2

2

0.5

1.0

0

−2

10

T

=60°C; R

amb

V

during 1 - δ; curves include derating for T

RRMmax

th j-a

= 150 K/W.

−1

10

j max

1

at V

RRM

10 10

= 100 V.

2

3

10

Fig.6 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.

tp (ms)

MBK214

4

10

1998 Nov 25 5

Philips Semiconductors Product specification

Fast soft-recovery rectifier BYG85B

22.5

I

F(AV)

MBK215

1.57

(A)

handbook, halfpage

4

P

(W)

3

2

1

0

0123

a = I

F(RMS)/IF(AV)

; VR=V

RRMmax

a = 3

; δ = 0.5.

Fig.7 Maximum steady state power dissipation

(forward plus leakage current losses,
excluding switching losses) as a function
of average forward current.

1.42

handbook, halfpage

6

I

F

(A)

5

4

3

2

1

0

0 0.4 0.8 2.01.6

Dotted line: Tj= 175 °C.
Solid line: Tj=25°C.

1.2

Fig.8 Forward current as a function of forward

voltage; maximum values.

MBK209

VF (V)

3

10

handbook, halfpage

I

R

(µA)

2

10

10

1

0 100 200

VR=V

RMMmax

.

Tj (°C)

Fig.9 Reverse current as a function of junction

temperature; maximum values.

MGC550

2

10

handbook, halfpage

C

d

(pF)

10

11010

f = 1 MHz; Tj=25°C.

MBK225

V

(V)

R

Fig.10 Diode capacitance as a function of reverse

voltage; typical values.

2

1998 Nov 25 6

Philips Semiconductors Product specification

Fast soft-recovery rectifier BYG85B

50

4.5

50

2.5

1.25

Dimensions in mm.

MSB213

Fig.11 Printed-circuit board for surface mounting.

I

handbook, halfpage

F

I

R

Fig.12 Reverse recovery definitions.

dI

F

dt

t

rr

t

10%

dI

R

dt

100%

MGC499

handbook, full pagewidth

DUT

0.5 A

+

Rise time oscilloscope: tr≤ 2 ns.
Turn-on time switch: t ≤ 3 ns.

50 Ω

Fig.13 Test circuit and reverse recovery time waveform and definition.

1998 Nov 25 7

I

(A)

0.25

R

(A)

0.5

0.5

1.0

I

F

t

rr

0

t

MAM418

Philips Semiconductors Product specification

Fast soft-recovery rectifier BYG85B

PACKAGE OUTLINE

Transfer-moulded thermo-setting plastic small rectangular surface mounted package;
2 connectors

H
D

A

A

1

c

SOD106

E

b (1)

DIMENSIONS (mm are the original dimensions)

UNIT bA

mm

Note

1. The marking band indicates the cathode.

A

1

2.3

2.0

OUTLINE

VERSION

SOD106 97-06-09DO-214AC

cD

1.6

1.4

IEC JEDEC EIAJ

4.5

0.20.05

4.3

Q

0 2.5 5 mm

scale

Q

H

E

2.8

5.5

5.1

3.3

2.7

2.4

REFERENCES

EUROPEAN

PROJECTION

ISSUE DATE

1998 Nov 25 8

Philips Semiconductors Product specification

Fast soft-recovery rectifier BYG85B

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1998 Nov 25 9

Philips Semiconductors Product specification

Fast soft-recovery rectifier BYG85B

NOTES

1998 Nov 25 10

Philips Semiconductors Product specification

Fast soft-recovery rectifier BYG85B

NOTES

1998 Nov 25 11

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© Philips Electronics N.V. 1998 SCA60
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Printed in The Netherlands 135106/00/01/pp12 Date of release: 1998 Nov 25 Document order number: 9397 750 04762