Page 1
DATA SH EET
Product specification
Supersedes data of 1996 May 24
1997 Nov 25
DISCRETE SEMICONDUCTORS
BYG80 series
Ultra fast low-loss
controlled avalanche rectifiers
k, halfpage
M3D168
Page 2
1997 Nov 25 2
Philips Semiconductors Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYG80 series
FEATURES
• Glass passivated
• High maximum operating
temperature
• Low leakage current
• Excellent stability
• Guaranteed avalanche energy
absorption capability
• UL 94V-O classified plastic
package
• Shipped in 12 mm embossed tape.
DESCRIPTION
DO-214AC surface mountable
package with glass passivated chip.
The well-defined void-free case is of a
transfer-moulded thermo-setting
plastic.
Fig.1 Simplified outline (DO-214AC; SOD106) and symbol.
handbook, 4 columns
MSA474
Top view Side view
cathode
band
ka
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
RRM
repetitive peak reverse voltage
BYG80A − 50 V
BYG80B − 100 V
BYG80C − 150 V
BYG80D − 200 V
BYG80F − 300 V
BYG80G − 400 V
BYG80J − 600 V
V
R
continuous reverse voltage
BYG80A − 50 V
BYG80B − 100 V
BYG80C − 150 V
BYG80D − 200 V
BYG80F − 300 V
BYG80G − 400 V
BYG80J − 600 V
I
F(AV)
average forward current Ttp= 100 °C; see Figs 2, 3 and 4
averaged over any 20 ms period;
see also Figs 17, 18 and 19
BYG80A to D − 2.4 A
BYG80F; BYG80G − 2.3 A
BYG80J − 2.0 A
I
F(AV)
average forward current T
amb
=60°C; AL2O3 PCB mounting
(see Fig.27); see Figs 5, 6 and 7
averaged over any 20 ms period;
see also Figs 17, 18 and 19
BYG80A to D − 1.25 A
BYG80F; BYG80G − 1.15 A
BYG80J − 0.95 A
Page 3
1997 Nov 25 3
Philips Semiconductors Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYG80 series
ELECTRICAL CHARACTERISTICS
T
j
=25°C unless otherwise specified.
I
F(AV)
average forward current T
amb
=60°C; epoxy PCB mounting
(see Fig.27); see Figs 5, 6 and 7
averaged over any 20 ms period;
see also Figs 17, 18 and 19
BYG80A to D − 0.95 A
BYG80F; BYG80G − 0.85 A
BYG80J − 0.65 A
I
FRM
repetitive peak forward current Ttp= 100 °C; see Figs 8, 9 and 10
BYG80A to D − 21 A
BYG80F; BYG80G − 21 A
BYG80J − 18 A
I
FRM
repetitive peak forward current T
amb
=60°C; AL2O3PCB mounting;
see Figs 11, 12 and 13
BYG80A to D − 11 A
BYG80F; BYG80G − 11 A
BYG80J − 9A
I
FRM
repetitive peak forward current T
amb
=60°C; epoxy PCB mounting;
see Figs 14, 15 and 16
BYG80A to D − 8A
BYG80F; BYG80G − 8A
BYG80J − 6A
I
FSM
non-repetitive peak forward current t = 8.3 ms half sine wave; Tj=25°C
prior to surge; VR=V
RRMmax
BYG80A to D − 36 A
BYG80F; BYG80G; BYG80J − 32 A
E
RSM
non-repetitive peak reverse
avalanche energy
L = 120 mH; Tj=T
j max
prior to surge;
inductive load switched off
− 10 mJ
T
stg
storage temperature −65 +175 °C
T
j
junction temperature see Fig.20 −65 +175 °C
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
forward voltage IF= 1 A; Tj=T
j max
;
see Figs 21, 22 and 23
BYG80A to D −−0.67 V
BYG80F; BYG80G −−0.73 V
BYG80J −−0.96 V
V
F
forward voltage IF= 1 A; see Figs 21, 22 and 23
BYG80A to D −−0.93 V
BYG80F; BYG80G −−0.98 V
BYG80J −−1.20 V
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Page 4
1997 Nov 25 4
Philips Semiconductors Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYG80 series
THERMAL CHARACTERISTICS
Notes
1. Device mounted on Al
2O3
printed-circuit board, 0.7 mm thick; thickness of copper ≥35 µm, see Fig.27.
2. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper ≥40 µm, see Fig.27.
For more information please refer to the
“General Part of associated Handbook”
.
V
(BR)R
reverse avalanche
breakdown voltage
IR= 0.1 mA
BYG80A 55 −−V
BYG80B 110 −−V
BYG80C 165 −−V
BYG80D 220 −−V
BYG80F 330 −−V
BYG80G 440 −−V
BYG80J 675 −−V
I
R
reverse current VR=V
RRMmax
;
see Figs 24 and 25
−−10 µA
I
R
reverse current VR=V
RRMmax
; Tj= 165 °C;
see Figs 24 and 25
BYG80A to D −−100 µA
BYG80F; BYG80G and J −−150 µA
t
rr
reverse recovery time when switched from IF= 0.5 A to
IR= 1 A; measured at IR= 0.25 A;
see Fig.29
BYG80A to D −−25 ns
BYG80F; BYG80G and J −−50 ns
C
d
diode capacitance f = 1 MHz; VR= 0; see Fig.26
BYG80A to D − 90 − pF
BYG80F; BYG80G − 70 − pF
BYG80J − 65 − pF
maximum slope of reverse
recovery current
when switched from IF= 1 A to
VR≥ 30 V and dIF/dt = −1A/µs;
see Fig.28
BYG80A to D −− 3A/µs
BYG80F; BYG80G and J −− 4A/µs
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-tp
thermal resistance from junction to tie-point 25 K/W
R
th j-a
thermal resistance from junction to ambient note 1 100 K/W
note 2 150 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
dI
R
dt
--------
Page 5
1997 Nov 25 5
Philips Semiconductors Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYG80 series
GRAPHICAL DATA
Fig.2 Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
BYG80A toD
Switched mode application; VR=V
RRMmax
; δ = 0.5; a = 1.42.
handbook, halfpage
0 200
100
T
tp
(oC)
4
3
I
F(AV)
(A)
1
0
2
MGL081
BYG80F and G
Switched mode application; VR=V
RRMmax
; δ = 0.5; a= 1.42.
Fig.3 Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
handbook, halfpage
0 40 200
Ttp (°C)
I
F(AV)
(A)
4
3
1
0
2
80 120 160
MBK454
BYG80J
Switched mode application.
VR=V
RRMmax
; δ = 0.5; a= 1.42.
Fig.4 Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
handbook, halfpage
040
I
FAV
(A)
200
4.0
3.0
1.0
0
2.0
80 120 160
Ttp (οC)
MGL094
Fig.5 Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
BYG80A to D
Switched mode application; VR=V
RRMmax
; δ = 0.5; a= 1.42
Device mounted as shown in Fig.27;
1: Al
2O3
PCB; 2: epoxy PCB.
handbook, halfpage
0
(1)
(2)
200
100
T
amb
(οC)
2
1.5
I
F(AV)
(A)
0.5
0
1
MGL079
Page 6
1997 Nov 25 6
Philips Semiconductors Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYG80 series
BYG80F and G
Switched mode application; VR=V
RRMmax
; δ = 0.5; a= 1.42
Device mounted as shown in Fig.27;
1: Al
2O3
PCB; 2: epoxy PCB.
Fig.6 Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
handbook, halfpage
0
(1)
(2)
200
100
T
amb
(οC)
2
1.5
I
F(AV)
(A)
0.5
0
1
MGL080
BYG80J
Switched mode application; VR=V
RRMmax
; δ = 0.5; a= 1.42
Device mounted as shown in Fig.27;
1: Al
2O3
PCB; 2: epoxy PCB.
Fig.7 Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
handbook, halfpage
0 200
0
0.4
0.8
1.2
1.6
40
(1)
(2)
I
F(AV)
(A)
80 120
Tamb (
o
C)
160
MGL092
Fig.8 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
BYG80A to D
Ttp= 100 °C; R
th j-tp
= 25 K/W.
V
RRMmax
during 1 - δ; curves include derating for T
j max
at V
RRM
= 200 V.
handbook, full pagewidth
30
0
10
I
FRM
(A)
20
MGL086
10
−2
10
−1
110
t
P
(ms)
10
2
10
3
10
4
δ = 0.05
1
0.1
0.2
0.5
Page 7
1997 Nov 25 7
Philips Semiconductors Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYG80 series
handbook, full pagewidth
30
0
10
I
FRM
(A)
20
MGL087
10
−2
10
−1
110
t
P
(ms)
10
2
10
3
10
4
δ = 0.05
1
0.1
0.2
0.5
BYGF and G
Ttp= 100 °C; R
th j-tp
= 25 K/W.
V
RRMmax
during 1 - δ; curves include derating for T
j max
at V
RRM
= 400 V.
Fig.9 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
handbook, full pagewidth
20
0
4
8
12
16
MGL096
10
−2
10
−1
1
I
FRM
(A)
10
tP (ms)
10
2
10
3
10
4
0.5
1
0.1
δ = 0.05
0.2
BYG80J
Ttp= 100 °C; R
th j-tp
= 25 K/W.
V
RRMmax
during 1 - δ; curves include derating for T
j max
at V
RRM
= 600 V.
Fig.10 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
Page 8
1997 Nov 25 8
Philips Semiconductors Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYG80 series
Fig.11 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
BYG80A to D
T
amb
=60°C; R
th j-a
= 100 K/W.
V
RRMmax
during 1 - δ; curves include derating for T
j max
at V
RRM
= 200 V.
handbook, full pagewidth
0
20
4
8
12
I
FRM
(A)
16
MGL082
10
−2
10
−1
110
t
p
(ms)
10
2
10
3
0.2
0.5
1
0.1
δ = 0.05
handbook, full pagewidth
0
20
4
8
12
I
FRM
(A)
16
MGL083
10
−2
10
−1
110
t
p
(ms)
10
2
10
3
0.2
0.5
1
0.1
δ = 0.05
BYG80F and G
T
amb
=60°C; R
th j-a
= 100 K/W.
V
RRMmax
during 1 - δ; curves include derating for T
j max
at V
RRM
= 400 V.
Fig.12 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
Page 9
1997 Nov 25 9
Philips Semiconductors Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYG80 series
handbook, full pagewidth
10
0
2
4
6
8
MGL093
10
−2
10
−1
1
I
FRM
(A)
10
tP (ms)
10
2
10
3
10
4
0.2
0.5
1
0.1
δ = 0.05
BYG80J
T
amb
=60°C; R
th j-a
= 100 K/W.
V
RRMmax
during 1 - δ; curves include derating for T
j max
at V
RRM
= 600 V.
Fig.13 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
handbook, full pagewidth
0
10
2
4
6
I
FRM
(A)
8
MGL084
10
−2
10
−1
110
t
p
(ms)
10
2
10
3
δ = 0.05
0.1
0.2
0.5
1
BYG80A to D
T
amb
=60°C; R
th j-a
= 150 K/W.
V
RRMmax
during 1 - δ; curves include derating for T
j max
at V
RRM
= 200 V.
Fig.14 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
Page 10
1997 Nov 25 10
Philips Semiconductors Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYG80 series
handbook, full pagewidth
0
10
2
4
6
I
FRM
(A)
8
MGL085
10
−2
10
−1
110
t
p
(ms)
10
2
10
3
0.1
0.2
1
δ = 0.05
0.5
BYG80F and G
T
amb
=60°C; R
th j-a
= 150 K/W.
V
RRMmax
during 1 - δ; curves include derating for T
j max
at V
RRM
= 400 V.
Fig.15 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
handbook, full pagewidth
8
2
0
4
6
MGL097
10
−2
10
−1
I
FRM
(A)
10
tP (ms)
10
2
10
3
10
4
0.2
0.5
0.1
δ = 0.05
1
Fig.16 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
BYG80J
T
amb
=60°C; R
th j-a
= 150 K/W.
V
RRMmax
during 1 - δ; curves include derating for T
j max
at V
RRM
= 600 V.
Page 11
1997 Nov 25 11
Philips Semiconductors Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYG80 series
Fig.17 Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function
of average forward current.
BYG80A to D
a=I
F(RMS)/IF(AV)
; V
RRMmax
.
handbook, halfpage
02
1.42
I
F(AV)
(A)
4
8
6
P
(W)
2
0
4
MGL088
2.5 1.572a = 3
BYG80F and G
a=I
F(RMS)/IF(AV)
; V
RRMmax
.
Fig.18 Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function
of average forward current.
handbook, halfpage
02
I
F(AV)
(A)
4
8
6
P
(W)
2
0
4
MGL089
1.422.5 1.572a = 3
BYG80J
a=I
F(RMS)/IF(AV)
; V
RRMmax
.
Fig.19 Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function
of average forward current.
handbook, halfpage
02
I
F(AV)
(A)
4
8
6
P
(W)
2
0
4
MGL099
1.422.5 1.572a = 3
Fig.20 Maximum permissible junction
temperature as a function of maximum
reverse voltage percentage.
Solid line = VR.
Dotted line = V
RRM
; δ = 0.5.
handbook, halfpage
0 100
VR (%V
Rmax
)
T
j
(°C)
200
0
100
50
MBK455
Page 12
1997 Nov 25 12
Philips Semiconductors Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYG80 series
BYG80A to D
(1) Tj= 175 °C.
(2) Tj=25°C.
Fig.21 Forward current as a function of forward
voltage; maximum values.
handbook, halfpage
01
(1) (2)
2
VF (V)
3
10
0
8
I
F
(A)
6
4
2
MGL090
handbook, halfpage
0 2.0
10
0
2
4
6
8
0.4
(2)
I
F
(A)
0.8 1.2
VF (V)
1.6
MGL091
(1)
Fig.22 Forward current as a function of forward
voltage; maximum values.
BYG80F and G
(1) Tj= 175 °C.
(2) Tj=25°C.
handbook, halfpage
01
I
F
(A)
2
VF (V)
3
10
0
8
6
4
2
MGL098
(1) (2)
Fig.23 Forward current as a function of forward
voltage; maximum values.
BYG80J
(1) Tj= 175 °C.
(2) Tj=25°C.
Fig.24 Reverse current as a function of junction
temperature; maximum values.
BYG80A to D
VR=V
RMMmax
.
handbook, halfpage
MGL095
0 100 200
10
3
10
2
10
1
(µA)
I
R
Tj (°C)
Page 13
1997 Nov 25 13
Philips Semiconductors Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYG80 series
handbook, halfpage
MGC549
0 100 200
10
3
10
2
10
1
(µA)
I
R
Tj (°C)
Fig.25 Reverse current as a function of junction
temperature; maximum values.
BYG80F to J
VR=V
RMMmax
.
Fig.26 Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; Tj=25°C.
(1) BYG80A to D
(2) BYG80F and G
(3) BYG80J
handbook, halfpage
10
2
10
C
d
(pF)
1
MGL078
1
(1)
10
VR (V)
10
3
10
2
(2)
(3)
Fig.27 Printed-circuit board for surface mounting.
Dimensions in mm.
MSB213
4.5
2.5
1.25
50
50
handbook, halfpage
10%
100%
dI
dt
t
t
rr
I
F
I
R
MGC499
F
dI
dt
R
Fig.28 Reverse recovery definitions.
Page 14
1997 Nov 25 14
Philips Semiconductors Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYG80 series
Fig.29 Test circuit and reverse recovery time waveform and definition.
Input impedance oscilloscope: 1 MΩ, 22 pF; tr≤ 7 ns.
Source impedance: 50 Ω; tr≤ 15 ns.
handbook, full pagewidth
10 Ω
1 Ω
50 Ω
25 V
DUT
MAM057
+
t
rr
0.5
0
0.5
1.0
I
F
(A)
I
R
(A)
t
0.25
Page 15
1997 Nov 25 15
Philips Semiconductors Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYG80 series
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC JEDEC EIAJ
SOD106 97-06-09DO-214AC
0 2.5 5 mm
scale
Transfer-moulded thermo-setting plastic small rectangular surface mounted package;
2 connectors
SOD106
UNIT bA
1
cD
E
Q
mm
1.6
1.4
0.20.05
2.8
2.4
4.5
4.3
H
5.5
5.1
3.3
2.7
DIMENSIONS (mm are the original dimensions)
A
2.3
2.0
D
H
A
E
b (1)
A
1
Q
c
Note
1. The marking band indicates the cathode.
Page 16
1997 Nov 25 16
Philips Semiconductors Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYG80 series
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Page 17
1997 Nov 25 17
Philips Semiconductors Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYG80 series
NOTES
Page 18
1997 Nov 25 18
Philips Semiconductors Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYG80 series
NOTES
Page 19
1997 Nov 25 19
Philips Semiconductors Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYG80 series
NOTES
Page 20
Internet: http://www.semiconductors.philips.com
Philips Semiconductors – a worldwide company
© Philips Electronics N.V. 1997 SCA56
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Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. +41 1 488 2686, Fax. +41 1 481 7730
Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. +66 2 745 4090, Fax. +66 2 398 0793
Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,
Tel. +90 212 279 2770, Fax. +90 212 282 6707
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. +380 44 264 2776, Fax. +38044 268 0461
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax.+44 181754 8421
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381
Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 625 344, Fax.+38111 635777
For all other countries apply to: Philips Semiconductors,
International Marketing & Sales Communications, Building BE-p,
P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
Argentina: see South America
Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113,
Tel. +61 2 9805 4455, Fax. +61 29805 4466
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 160 1010,
Fax. +43 160 101 1210
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,
220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200773
Belgium: see The Netherlands
Brazil: seeSouth America
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15thfloor,
51 James Bourchier Blvd., 1407 SOFIA,
Tel. +359 2 689 211, Fax. +359 2689 102
Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
Tel. +1 800 234 7381
China/Hong Kong: 501 Hong Kong Industrial Technology Centre,
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,
Tel. +852 2319 7888, Fax. +8522319 7700
Colombia: see South America
Czech Republic: see Austria
Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S,
Tel. +45 32 88 2636, Fax. +45 31 57 0044
Finland: Sinikalliontie 3, FIN-02630 ESPOO,
Tel. +358 9 615800, Fax. +358 9 61580920
France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex,
Tel. +33 1 40 99 6161, Fax. +33 1 4099 6427
Germany: Hammerbrookstraße 69, D-20097 HAMBURG,
Tel. +49 40 23 53 60, Fax. +4940 23536 300
Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS,
Tel. +30 1 4894 339/239, Fax. +30 14814 240
Hungary: seeAustria
India: Philips INDIA Ltd, Band Box Building, 2nd floor,
254-D, Dr. Annie BesantRoad, Worli, MUMBAI 400 025,
Tel. +91 22 493 8541, Fax.+91 22493 0966
Indonesia: see Singapore
Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. +353 1 7640 000, Fax.+353 17640 200
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,
TEL AVIV 61180, Tel. +972 3 645 0444, Fax.+972 3649 1007
Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,
20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108,
Tel. +81 3 3740 5130, Fax. +81 33740 5077
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
Tel. +82 2 709 1412, Fax. +82 2 709 1415
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. +60 3 750 5214, Fax. +60 3 7574880
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. +9-5 800 234 7381
Middle East: see Italy
Printed in The Netherlands 117027/1200/02/pp20 Date of release: 1997 Nov 25 Document order number: 9397 750 02662
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