Page 1
DISCRETE SEMICONDUCTORS
DATA SH EET
k, halfpage
M3D168
BYG80 series
Ultra fast low-loss
controlled avalanche rectifiers
Product specification
Supersedes data of 1996 May 24
File under Discrete Semiconductors, SC01
1997 Nov 25
Page 2
Philips Semiconductors Product specification
Ultra fast low-loss
controlled avalanche rectifiers
FEATURES
• Glass passivated
• High maximum operating
temperature
• Low leakage current
• Excellent stability
• Guaranteed avalanche energy
absorption capability
• UL 94V-O classified plastic
package
• Shipped in 12 mm embossed tape.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
DESCRIPTION
DO-214AC surface mountable
package with glass passivated chip.
handbook, 4 columns
ka
cathode
band
Top view Side view
Fig.1 Simplified outline (DO-214AC; SOD106) and symbol.
BYG80 series
The well-defined void-free case is of a
transfer-moulded thermo-setting
plastic.
MSA474
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
RRM
repetitive peak reverse voltage
BYG80A − 50 V
BYG80B − 100 V
BYG80C − 150 V
BYG80D − 200 V
BYG80F − 300 V
BYG80G − 400 V
BYG80J − 600 V
V
R
continuous reverse voltage
BYG80A − 50 V
BYG80B − 100 V
BYG80C − 150 V
BYG80D − 200 V
BYG80F − 300 V
BYG80G − 400 V
BYG80J − 600 V
I
F(AV)
average forward current Ttp= 100 °C; see Figs 2, 3 and 4
BYG80A to D − 2.4 A
BYG80F; BYG80G − 2.3 A
averaged over any 20 ms period;
see also Figs 17, 18 and 19
BYG80J − 2.0 A
I
F(AV)
average forward current T
BYG80A to D − 1.25 A
BYG80F; BYG80G − 1.15 A
=60°C; AL2O3 PCB mounting
amb
(see Fig.27); see Figs 5, 6 and 7
averaged over any 20 ms period;
see also Figs 17, 18 and 19
BYG80J − 0.95 A
1997 Nov 25 2
Page 3
Philips Semiconductors Product specification
Ultra fast low-loss
BYG80 series
controlled avalanche rectifiers
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
F(AV)
I
FRM
I
FRM
I
FRM
I
FSM
E
RSM
T
stg
T
j
average forward current T
BYG80A to D − 0.95 A
BYG80F; BYG80G − 0.85 A
BYG80J − 0.65 A
repetitive peak forward current Ttp= 100 °C; see Figs 8, 9 and 10
BYG80A to D − 21 A
BYG80F; BYG80G − 21 A
BYG80J − 18 A
repetitive peak forward current T
BYG80A to D − 11 A
BYG80F; BYG80G − 11 A
BYG80J − 9A
repetitive peak forward current T
BYG80A to D − 8A
BYG80F; BYG80G − 8A
BYG80J − 6A
non-repetitive peak forward current t = 8.3 ms half sine wave; Tj=25°C
BYG80A to D − 36 A
BYG80F; BYG80G; BYG80J − 32 A
non-repetitive peak reverse
avalanche energy
storage temperature −65 +175 °C
junction temperature see Fig.20 −65 +175 °C
=60°C; epoxy PCB mounting
amb
(see Fig.27); see Figs 5, 6 and 7
averaged over any 20 ms period;
see also Figs 17, 18 and 19
=60°C; AL2O3PCB mounting;
amb
see Figs 11, 12 and 13
=60°C; epoxy PCB mounting;
amb
see Figs 14, 15 and 16
prior to surge; VR=V
L = 120 mH; Tj=T
RRMmax
prior to surge;
j max
inductive load switched off
− 10 mJ
ELECTRICAL CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
forward voltage IF= 1 A; Tj=T
BYG80A to D −−0.67 V
see Figs 21, 22 and 23
j max
;
BYG80F; BYG80G −−0.73 V
BYG80J −−0.96 V
V
F
forward voltage IF= 1 A; see Figs 21, 22 and 23
BYG80A to D −−0.93 V
BYG80F; BYG80G −−0.98 V
BYG80J −−1.20 V
1997 Nov 25 3
Page 4
Philips Semiconductors Product specification
Ultra fast low-loss
BYG80 series
controlled avalanche rectifiers
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)R
I
R
I
R
t
rr
C
d
dI
R
-------dt
reverse avalanche
breakdown voltage
BYG80A 55 −−V
BYG80B 110 −−V
BYG80C 165 −−V
BYG80D 220 −−V
BYG80F 330 −−V
BYG80G 440 −−V
BYG80J 675 −−V
reverse current VR=V
reverse current VR=V
BYG80A to D −−100 µA
BYG80F; BYG80G and J −−150 µA
reverse recovery time when switched from IF= 0.5 A to
BYG80A to D −−25 ns
BYG80F; BYG80G and J −−50 ns
diode capacitance f = 1 MHz; VR= 0; see Fig.26
BYG80A to D − 90 − pF
BYG80F; BYG80G − 70 − pF
BYG80J − 65 − pF
maximum slope of reverse
recovery current
BYG80A to D −− 3A/µs
BYG80F; BYG80G and J −− 4A/µs
IR= 0.1 mA
;
RRMmax
see Figs 24 and 25
; Tj= 165 °C;
RRMmax
see Figs 24 and 25
IR= 1 A; measured at IR= 0.25 A;
see Fig.29
when switched from IF= 1 A to
VR≥ 30 V and dIF/dt = −1A/µs;
see Fig.28
−−10 µA
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
R
th j-tp
th j-a
thermal resistance from junction to tie-point 25 K/W
thermal resistance from junction to ambient note 1 100 K/W
note 2 150 K/W
Notes
1. Device mounted on Al
printed-circuit board, 0.7 mm thick; thickness of copper ≥35 µm, see Fig.27.
2O3
2. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper ≥40 µm, see Fig.27.
For more information please refer to the
‘General Part of Handbook SC01’
.
1997 Nov 25 4
Page 5
Philips Semiconductors Product specification
Ultra fast low-loss
controlled avalanche rectifiers
GRAPHICAL DATA
handbook, halfpage
4
I
F(AV)
(A)
3
2
1
0
0 200
BYG80A toD
Switched mode application; VR=V
100
T
; δ = 0.5; a = 1.42.
RRMmax
(oC)
tp
MGL081
handbook, halfpage
4
I
F(AV)
(A)
3
2
1
0
0 40 200
BYG80F and G
Switched mode application; VR=V
BYG80 series
80 120 160
; δ = 0.5; a= 1.42.
RRMmax
MBK454
Ttp (°C)
Fig.2 Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
4.0
handbook, halfpage
I
FAV
(A)
3.0
2.0
1.0
0
040
BYG80J
Switched mode application.
VR=V
; δ = 0.5; a= 1.42.
RRMmax
80 120 160
Ttp (οC)
MGL094
200
Fig.3 Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
handbook, halfpage
2
I
F(AV)
(A)
1.5
1
0.5
0
0
BYG80A to D
Switched mode application; VR=V
Device mounted as shown in Fig.27;
PCB; 2: epoxy PCB.
1: Al
2O3
(1)
(2)
100
T
; δ = 0.5; a= 1.42
RRMmax
amb
(οC)
MGL079
200
Fig.4 Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
1997 Nov 25 5
Fig.5 Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
Page 6
Philips Semiconductors Product specification
Ultra fast low-loss
controlled avalanche rectifiers
handbook, halfpage
2
I
F(AV)
(A)
1.5
1
0.5
0
0
BYG80F and G
Switched mode application; VR=V
Device mounted as shown in Fig.27;
PCB; 2: epoxy PCB.
1: Al
2O3
(1)
(2)
100
T
; δ = 0.5; a= 1.42
RRMmax
amb
(οC)
MGL080
200
1.6
handbook, halfpage
I
F(AV)
(A)
1.2
(1)
0.8
(2)
0.4
0
BYG80J
Switched mode application; VR=V
Device mounted as shown in Fig.27;
PCB; 2: epoxy PCB.
1: Al
2O3
40
0 200
80 120
RRMmax
BYG80 series
MGL092
160
o
Tamb (
C)
; δ = 0.5; a= 1.42
Fig.6 Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
30
handbook, full pagewidth
I
FRM
(A)
10
δ = 0.05
0.1
0.2
0.5
1
−1
110
at V
j max
20
10
0
−2
10
BYG80A to D
Ttp= 100 °C; R
V
during 1 - δ; curves include derating for T
RRMmax
th j-tp
= 25 K/W.
RRM
= 200 V.
Fig.7 Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
MGL086
2
10
3
10
t
(ms)
P
4
10
Fig.8 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
1997 Nov 25 6
Page 7
Philips Semiconductors Product specification
Ultra fast low-loss
controlled avalanche rectifiers
30
handbook, full pagewidth
I
FRM
(A)
10
δ = 0.05
0.1
0.2
0.5
1
−1
20
10
0
−2
10
110
BYG80 series
MGL087
2
10
3
10
4
t
(ms)
P
10
BYGF and G
Ttp= 100 °C; R
V
during 1 - δ; curves include derating for T
RRMmax
th j-tp
= 25 K/W.
j max
at V
RRM
= 400 V.
Fig.9 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
20
handbook, full pagewidth
I
FRM
(A)
16
12
8
4
0
−2
10
δ = 0.05
0.1
0.2
0.5
1
−1
10
1
10
2
10
3
10
tP (ms)
MGL096
4
10
BYG80J
Ttp= 100 °C; R
V
during 1 - δ; curves include derating for T
RRMmax
th j-tp
= 25 K/W.
j max
at V
RRM
= 600 V.
Fig.10 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
1997 Nov 25 7
Page 8
Philips Semiconductors Product specification
Ultra fast low-loss
controlled avalanche rectifiers
20
handbook, full pagewidth
I
FRM
(A)
16
12
8
4
0
−2
10
BYG80A to D
T
=60°C; R
amb
V
RRMmax
th j-a
during 1 - δ; curves include derating for T
δ = 0.05
= 100 K/W.
0.1
0.2
0.5
1
10
−1
j max
110
at V
= 200 V.
RRM
BYG80 series
2
10
t
(ms)
p
MGL082
3
10
Fig.11 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
20
handbook, full pagewidth
I
FRM
(A)
16
12
8
4
0
−2
10
BYG80F and G
T
=60°C; R
amb
V
RRMmax
th j-a
during 1 - δ; curves include derating for T
= 100 K/W.
δ = 0.05
0.1
0.2
0.5
1
10
−1
j max
110
at V
= 400 V.
RRM
2
10
t
(ms)
p
MGL083
3
10
Fig.12 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
1997 Nov 25 8
Page 9
Philips Semiconductors Product specification
Ultra fast low-loss
controlled avalanche rectifiers
10
handbook, full pagewidth
I
FRM
(A)
8
6
4
2
0
−2
10
δ = 0.05
0.1
0.2
0.5
1
−1
10
BYG80 series
MGL093
1
10
2
10
3
10
tP (ms)
4
10
BYG80J
T
=60°C; R
amb
V
during 1 - δ; curves include derating for T
RRMmax
= 100 K/W.
th j-a
j max
at V
RRM
= 600 V.
Fig.13 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
10
handbook, full pagewidth
I
FRM
(A)
8
6
4
2
0
−2
10
BYG80A to D
T
=60°C; R
amb
V
during 1 - δ; curves include derating for T
RRMmax
= 150 K/W.
th j-a
−1
10
δ = 0.05
at V
j max
0.1
0.2
0.5
1
110
= 200 V.
RRM
2
10
t
(ms)
p
MGL084
3
10
Fig.14 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
1997 Nov 25 9
Page 10
Philips Semiconductors Product specification
Ultra fast low-loss
controlled avalanche rectifiers
10
handbook, full pagewidth
I
FRM
(A)
8
6
4
2
0
−2
10
BYG80F and G
T
=60°C; R
amb
V
RRMmax
th j-a
during 1 - δ; curves include derating for T
= 150 K/W.
δ = 0.05
0.1
0.2
0.5
1
10
−1
j max
110
at V
= 400 V.
RRM
BYG80 series
2
10
t
(ms)
p
MGL085
3
10
Fig.15 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
handbook, full pagewidth
8
I
FRM
(A)
δ = 0.05
6
4
2
0
−2
10
10
BYG80J
T
=60°C; R
amb
V
during 1 - δ; curves include derating for T
RRMmax
= 150 K/W.
th j-a
0.1
0.2
0.5
1
−1
at V
RRM
= 600 V.
j max
10
2
10
3
10
tP (ms)
MGL097
4
10
Fig.16 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
1997 Nov 25 10
Page 11
Philips Semiconductors Product specification
Ultra fast low-loss
controlled avalanche rectifiers
handbook, halfpage
8
P
(W)
6
4
2
0
02
BYG80A to D
a=I
F(RMS)/IF(AV)
; V
RRMmax
.
2.5 1.572a = 3
I
F(AV)
(A)
MGL088
1.42
BYG80 series
(A)
MGL089
1.422.5 1.572a = 3
4
handbook, halfpage
4
8
P
(W)
6
4
2
0
02
BYG80F and G
a=I
F(RMS)/IF(AV)
; V
RRMmax
.
I
F(AV)
Fig.17 Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function
of average forward current.
handbook, halfpage
8
P
(W)
6
4
2
0
02
BYG80J
a=I
F(RMS)/IF(AV)
; V
RRMmax
I
F(AV)
.
MGL099
1.422.5 1.572a = 3
(A)
Fig.18 Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function
of average forward current.
Rmax
MBK455
)
200
handbook, halfpage
T
j
(°C)
100
4
0
0 100
Solid line = VR.
Dotted line = V
RRM
; δ = 0.5.
50
VR (%V
Fig.19 Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function
of average forward current.
1997 Nov 25 11
Fig.20 Maximum permissible junction
temperature as a function of maximum
reverse voltage percentage.
Page 12
Philips Semiconductors Product specification
Ultra fast low-loss
controlled avalanche rectifiers
10
handbook, halfpage
I
F
(A)
8
6
4
2
0
01
BYG80A to D
(1) Tj= 175 °C.
(2) Tj=25°C.
(1) (2)
2
VF (V)
MGL090
BYG80 series
1.6
MGL091
VF (V)
10
handbook, halfpage
I
F
(A)
8
6
4
2
3
0
BYG80F and G
(1) Tj= 175 °C.
(2) Tj=25°C.
0.4
0 2.0
(1)
0.8 1.2
(2)
Fig.21 Forward current as a function of forward
voltage; maximum values.
10
handbook, halfpage
I
F
(A)
8
6
4
(1) (2)
2
0
01
BYG80J
(1) Tj= 175 °C.
(2) Tj=25°C.
2
VF (V)
MGL098
Fig.22 Forward current as a function of forward
voltage; maximum values.
3
10
handbook, halfpage
I
R
(µA)
2
10
10
3
1
0 100 200
BYG80A to D
VR=V
RMMmax
.
MGL095
Tj (°C)
Fig.23 Forward current as a function of forward
voltage; maximum values.
1997 Nov 25 12
Fig.24 Reverse current as a function of junction
temperature; maximum values.
Page 13
Philips Semiconductors Product specification
Ultra fast low-loss
controlled avalanche rectifiers
3
10
handbook, halfpage
I
R
(µA)
2
10
10
1
0 100 200
BYG80F to J
VR=V
RMMmax
.
Tj (°C)
MGC549
2
10
handbook, halfpage
C
d
(pF)
10
1
1
f = 1 MHz; Tj=25°C.
(1) BYG80A to D
(2) BYG80F and G
(3) BYG80J
BYG80 series
MGL078
(1)
(2)
(3)
10
2
10
VR (V)
3
10
Fig.25 Reverse current as a function of junction
temperature; maximum values.
50
4.5
50
2.5
1.25
MSB213
Fig.26 Diode capacitance as a function of reverse
voltage; typical values.
I
handbook, halfpage
F
dI
F
dt
t
rr
dI
R
dt
I
R
10%
100%
t
MGC499
Dimensions in mm.
Fig.27 Printed-circuit board for surface mounting.
1997 Nov 25 13
Fig.28 Reverse recovery definitions.
Page 14
Philips Semiconductors Product specification
Ultra fast low-loss
controlled avalanche rectifiers
handbook, full pagewidth
10 Ω
25 V
DUT
+
1 Ω
50 Ω
(A)
I
R
I
(A)
0.5
0.25
0.5
1.0
BYG80 series
F
t
rr
0
t
MAM057
Input impedance oscilloscope: 1 MΩ, 22 pF; tr≤ 7 ns.
Source impedance: 50 Ω; tr≤ 15 ns.
Fig.29 Test circuit and reverse recovery time waveform and definition.
1997 Nov 25 14
Page 15
Philips Semiconductors Product specification
Ultra fast low-loss
controlled avalanche rectifiers
PACKAGE OUTLINE
Transfer-moulded thermo-setting plastic small rectangular surface mounted package;
2 connectors
H
D
A
A
1
c
Q
BYG80 series
SOD106
E
b (1)
DIMENSIONS (mm are the original dimensions)
UNIT bA
mm
Note
1. The marking band indicates the cathode.
A
1
2.3
2.0
OUTLINE
VERSION
SOD106 97-06-09DO-214AC
cD
1.6
1.4
IEC JEDEC EIAJ
4.5
0.20.05
4.3
0 2.5 5 mm
scale
Q
H
E
2.8
5.5
5.1
3.3
2.7
2.4
REFERENCES
EUROPEAN
PROJECTION
ISSUE DATE
1997 Nov 25 15
Page 16
Philips Semiconductors Product specification
Ultra fast low-loss
BYG80 series
controlled avalanche rectifiers
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Nov 25 16
Page 17
Philips Semiconductors Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYG80 series
NOTES
1997 Nov 25 17
Page 18
Philips Semiconductors Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYG80 series
NOTES
1997 Nov 25 18
Page 19
Philips Semiconductors Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYG80 series
NOTES
1997 Nov 25 19
Page 20
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TEL AVIV 61180, Tel. +972 3 645 0444, Fax.+972 3649 1007
Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,
20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108,
Tel. +81 3 3740 5130, Fax. +81 33740 5077
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
Tel. +82 2 709 1412, Fax. +82 2 709 1415
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. +60 3 750 5214, Fax. +60 3 7574880
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. +9-5 800 234 7381
Middle East: see Italy
Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,
Tel. +31 40 27 82785, Fax. +31 4027 88399
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,
Tel. +64 9 849 4160, Fax. +64 9 849 7811
Norway: Box 1, Manglerud 0612, OSLO,
Tel. +47 22 74 8000, Fax. +47 22 74 8341
Philippines: Philips Semiconductors Philippines Inc.,
106 Valero St. Salcedo Village, P.O. Box 2108 MCC,MAKATI,
Metro MANILA, Tel. +63 2 816 6380, Fax. +632 817 3474
Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,
Tel. +48 22 612 2831, Fax.+48 22612 2327
Portugal: see Spain
Romania: see Italy
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,
Tel. +7 095 755 6918, Fax.+7 095755 6919
Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231,
Tel. +65 350 2538, Fax. +65 251 6500
Slovakia: see Austria
Slovenia: see Italy
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,
2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000,
Tel. +27 11 470 5911, Fax.+27 11470 5494
South America: Al. Vicente Pinzon, 173, 6th floor,
04547-130 SÃO PAULO, SP, Brazil,
Tel. +55 11 821 2333, Fax.+55 11821 2382
Spain: Balmes 22, 08007 BARCELONA,
Tel. +34 3 301 6312, Fax. +34 3 301 4107
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. +46 8 632 2000, Fax. +46 8 632 2745
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. +41 1 488 2686, Fax. +41 1 481 7730
Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. +66 2 745 4090, Fax. +66 2 398 0793
Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,
Tel. +90 212 279 2770, Fax. +90 212 282 6707
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. +380 44 264 2776, Fax. +38044 268 0461
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax.+44 181754 8421
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381
Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 625 344, Fax.+38111 635777
For all other countries apply to: Philips Semiconductors,
International Marketing & Sales Communications, Building BE-p,
P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
© Philips Electronics N.V. 1997 SCA56
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Internet: http://www.semiconductors.philips.com
Printed in The Netherlands 117027/1200/02/pp20 Date of release: 1997 Nov 25 Document order number: 9397 750 02662
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