Fast soft-recovery
controlled avalanche rectifiers
Preliminary specification
File under Discrete Semiconductors, SC01
1996 Jun 05
Page 2
Philips SemiconductorsPreliminary specification
Fast soft-recovery
controlled avalanche rectifiers
FEATURES
• Glass passivated
• High maximum operating
temperature
• Low leakage current
• Excellent stability
• Guaranteed avalanche energy
absorption capability
• UL 94V-O classified plastic
package
• Shipped in 12 mm embossed tape.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
DESCRIPTION
DO-214AC surface mountable
package with glass passivated chip.
handbook, 4 columns
ka
cathode
band
Top viewSide view
Fig.1 Simplified outline (DO-214AC; SOD106) and symbol.
BYG70 series
The well-defined void-free case is of a
transfer-moulded thermo-setting
plastic.
MSA474
SYMBOLPARAMETERCONDITIONSMIN.MAX.UNIT
V
RRM
repetitive peak reverse voltage
BYG70D−200V
BYG70G−400V
BYG70J−600V
V
R
continuous reverse voltage
BYG70D−200V
BYG70G−400V
BYG70J−600V
I
F(AV)
average forward currentaveraged over any 20 ms period;
−1.00A
Ttp= 100 °C; see Fig.2
averaged over any 20 ms period;
PCB mounting (see Fig.7);
Al
2O3
T
=60°C; see Fig.3
amb
averaged over any 20 ms period;
−0.53A
−0.39A
epoxy PCB mounting (see Fig.7);
=60°C; see Fig.3
T
amb
I
FSM
E
T
T
RSM
stg
j
non-repetitive peak forward current t = 10 ms half sine wave;
non-repetitive peak reverse
avalanche energy
Tj=T
VR=V
L = 120 mH; Tj=T
inductive load switched off
prior to surge;
j max
RRMmax
prior to surge;
j max
−20A
−10
mJ
storage temperature−65+175°C
junction temperature
see Fig.4
−65+175°C
1996 Jun 052
Page 3
Philips SemiconductorsPreliminary specification
Fast soft-recovery
BYG70 series
controlled avalanche rectifiers
ELECTRICAL CHARACTERISTICS
T
=25°C unless otherwise specified.
j
SYMBOLPARAMETERCONDITIONSMIN.TYP.MAX.UNIT
V
F
V
(BR)R
I
R
t
rr
C
d
forward voltageIF=1A; Tj=T
I
= 1 A; see Fig.5−−3.6V
F
reverse avalanche
IR= 0.1 mA
breakdown voltage
BYG70D300−−V
BYG70G500−−V
BYG70J700−−V
reverse currentVR=V
RRMmax
see Fig.6
V
R=VRRMmax
see Fig.6
reverse recovery timewhen switched from IF= 0.5 A to
IR= 1 A; measured at IR= 0.25 A;
see Fig.8
diode capacitanceVR= 0 V; f = 1 MHz−30−
see Fig.5−−2.1V
j max;
;
; Tj= 165 °C;
−− 5µA
−−100µA
−−30
ns
pF
THERMAL CHARACTERISTICS
SYMBOLPARAMETERCONDITIONSVALUEUNIT
R
R
th j-tp
th j-a
thermal resistance from junction to tie-point25K/W
thermal resistance from junction to ambientnote 1100K/W
note 2150K/W
Notes
1. Device mounted on Al
printed-circuit board, 0.7 mm thick; thickness of copper ≥35 µm, see Fig.7.
2O3
2. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper ≥40 µm, see Fig.7.
For more information please refer to the
‘General Part of Handbook SC01’
.
1996 Jun 053
Page 4
Philips SemiconductorsPreliminary specification
Fast soft-recovery
controlled avalanche rectifiers
GRAPHICAL DATA
2.0
handbook, halfpage
I
F(AV)
(A)
1.5
1.0
0.5
0
0200
VR=V
; δ= 0.5; a = 1.57.
RRMmax
100
Ttp (°C)
MGD485
0.8
handbook, halfpage
I
F(AV)
(A)
0.6
0.4
0.2
0
0200
VR=V
Device mounted as shown in Fig.7;
solid line: Al
; δ = 0.5; a = 1.57.
RRMmax
PCB; dotted line: epoxy PCB.
2O3
BYG70 series
100
T
amb
MGD486
(°C)
Fig.2Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
200
handbook, halfpage
T
j
(°C)
160
120
80
40
0
0400
Device mounted as shown in Fig.7.
Solid line: Al2O3 PCB.
Dotted line: epoxy PCB.
DG J
VR (V)
MGD487
800
Fig.3Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
handbook, halfpage
5
I
F
(A)
4
3
2
1
0
0246
Solid line: Tj=25°C.
Dotted line: Tj= 175 °C.
V
F
MGD488
(V)
8
Fig.4Maximum permissible junction temperature
as a function of reverse voltage.
1996 Jun 054
Fig.5Forward current as a function of forward
voltage; maximum values.
Page 5
Philips SemiconductorsPreliminary specification
Fast soft-recovery
controlled avalanche rectifiers
3
10
handbook, halfpage
I
R
(µA)
2
10
10
1
100
o
Tj ( C)
MGC532
2000
50
4.5
BYG70 series
50
2.5
1.25
MSB213
VR=V
RMMmax
.
Fig.6Reverse current as a function of junction
temperature; maximum values.
handbook, full pagewidth
10 Ω
25 V
DUT
+
1 Ω
50 Ω
Dimensions in mm.
Material: AL2O3 or epoxy-glass.
Fig.7Printed-circuit board for surface mounting.
I
F
(A)
I
(A)
0.5
0
0.25
0.5
R
1.0
t
rr
t
MAM057
Input impedance oscilloscope: 1 MΩ, 22 pF; tr≤ 7 ns.
Source impedance: 50 Ω; tr≤ 15 ns.
Fig.8 Test circuit and reverse recovery time waveform and definition.
1996 Jun 055
Page 6
Philips SemiconductorsPreliminary specification
Fast soft-recovery
controlled avalanche rectifiers
PACKAGE OUTLINE
handbook, full pagewidth
2.3
2.0
0.05
2.8
1.6
2.4
1.4
5.5
5.1
4.5
4.3
3.3
2.7
BYG70 series
0.2
MSA414
Marking band indicates the cathode.
Dimensions in mm.
Fig.9 DO-214AC; SOD106.
DEFINITIONS
Data sheet status
Objective specificationThis data sheet contains target or goal specifications for product development.
Preliminary specificationThis data sheet contains preliminary data; supplementary data may be published later.
Product specificationThis data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Jun 056
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