Page 1
Silicon Mesa SMD Rectifier
g
Features
D
Controlled avalanche characteristics
D
Glass passivated junction
D
Low reverse current
D
High surge current capability
D
Wave and reflow solderable
Applications
Surface mounting
General purpose rectifier
BYG10
Vishay Telefunken
15 811
Absolute Maximum Ratings
Tj = 25_C
Parameter Test Conditions Type Symbol Value Unit
Reverse voltage BYG10D VR=V
=Repetitive peak reverse voltage
BYG10G VR=V
BYG10J VR=V
BYG10K VR=V
BYG10M VR=V
Peak forward surge current tp=10ms,
I
FSM
RRM
RRM
RRM
RRM
RRM
200 V
400 V
600 V
800 V
1000 V
30 A
half sinewave
Average forward current I
Junction and storage
Tj=T
FAV
stg
1.5 A
–55...+150
temperature range
Pulse energy in avalanche mode,
I
=1A, Tj=25°C E
(BR)R
R
20 mJ
non repetitive
(inductive load switch off)
Maximum Thermal Resistance
Tj = 25_C
Parameter Test Conditions Symbol Value Unit
Junction lead TL=const. R
Junction ambient mounted on epoxy–glass hard tissue R
mounted on epoxy–glass hard tissue, 50mm2 35mm Cu R
mounted on Al–oxid–ceramic (Al2O3), 50mm2 35mm Cu R
thJL
thJA
thJA
thJA
25 K/W
150 K/W
125 K/W
100 K/W
°
C
Document Number 86008
Rev. 3, 24-Jun-98
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Page 2
BYG10
g
Vishay Telefunken
Electrical Characteristics
Tj = 25_C
Parameter Test Conditions Type Symbol Min Typ Max Unit
Forward voltage IF=1A V
IF=1.5A V
Reverse current VR=V
VR=V
RRM
, Tj=100°C I
RRM
Reverse recovery time IF=0.5A, IR=1A, iR=0.25A t
Characteristics (Tj = 25_C unless otherwise specified)
F
F
I
R
R
rr
1.1 V
1.15 V
1
m
10
m
4
m
A
A
s
100
10
m
1
0.1
R
I – Reverse Current ( A )
VR=V
RRM
94 9180
0.01
0 40 80 120 160
Tj – Junction Temperature ( °C )
200
Figure 1. Typ. Reverse Current vs. Junction Temperature
2.0
1.6
1.2
0.8
100K/W
125K/W
R
thJA
=25K/W
100
10
Tj=125°C
1
Tj=75°C
F
0.1
I – Forward Current ( A )
0.01
0 0.6 1.2 1.8 2.4
94 9284
Tj=25°C
3.0
VF – Forward Voltage ( V )
Figure 3. Typ. Forward Current vs. Forward Voltage
5000
T
=125°C
4000
3000
2000
T
amb
=100°C
T
T
=25°C
amb
amb
amb
T
amb
=50°C
=75°C
0.4
FAV
I – Average Forward Current ( A )
0
0
150K/W
40 80 120 160
T
– Ambient Temperature ( °C )94 9179
amb
Figure 2. Max. Average Forward Current vs.
Ambient Temperature
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200
1000
rr
t – Reverse Recovery Time ( ns )
94 9544
0
0
0.2 0.4 0.6 0.8
IF – Forward Current ( A )
IR=0.5A, iR=0.125A
Figure 4. Typ. Reverse Recovery Time vs.
Forward Current
Document Number 86008
1.0
Rev. 3, 24-Jun-98
Page 3
BYG10
Vishay Telefunken
2000
1600
T
=75°C
amb
T
amb
T
amb
=100°C
=125°C
1200
T
=50°C
800
400
rr
Q – Reverse Recovery Charge ( nC )
T
IR=0.5A, iR=0.125A
amb
amb
=25°C
0
0
0.2 0.4 0.6 0.8
94 9338
I
– Forward Current ( A )
F
Figure 5. Typ. Reverse Recovery Charge vs.
Forward Current
1000
125K/W DC
100
tp/T=0.5
tp/T=0.2
tp/T=0.1
10
tp/T=0.05
tp/T=0.02
tp/T=0.01
1
thp
Z – Thermal Resistance for Pulse Cond. (K/W)
–5
10
–4
10
–3
10
1.0
10
tp – Pulse Length ( s )94 9339
–2
Single Pulse
10
–1
0
10
1
10
2
10
Document Number 86008
Rev. 3, 24-Jun-98
Figure 6. Thermal Response
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Page 4
BYG10
Vishay Telefunken
Dimensions in mm
14275
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Document Number 86008
Rev. 3, 24-Jun-98
Page 5
BYG10
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. V arious national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly , any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Document Number 86008
Rev. 3, 24-Jun-98
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
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