Page 1
DATA SH EET
Product specification
Supersedes data of December 1991
File under Discrete Semiconductors, SC01
1996 May 24
DISCRETE SEMICONDUCTORS
BYD77 series
Ultra fast low-loss
controlled avalanche rectifiers
book, halfpage
M3D121
Page 2
1996 May 24 2
Philips Semiconductors Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYD77 series
FEATURES
• Glass passivated
• High maximum operating
temperature
• Low leakage current
• Excellent stability
• Guaranteed avalanche energy
absorption capability
• Shipped in 8 mm embossed tape
• Smallest surface mount
rectifier outline.
DESCRIPTION
Cavity free cylindrical glass SOD87
package through Implotec
(1)
technology. This package is
hermetically sealed and fatigue free
as coefficients of expansion of all
used parts are matched.
(1) Implotec is a trademark of Philips.
Fig.1 Simplified outline (SOD87) and symbol.
handbook, 4 columns
MAM061
ka
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
RRM
repetitive peak reverse voltage
BYD77A − 50 V
BYD77B − 100 V
BYD77C − 150 V
BYD77D − 200 V
BYD77E − 250 V
BYD77F − 300 V
BYD77G − 400 V
V
R
continuous reverse voltage
BYD77A − 50 V
BYD77B − 100 V
BYD77C − 150 V
BYD77D − 200 V
BYD77E − 250 V
BYD77F − 300 V
BYD77G − 400 V
I
F(AV)
average forward current Ttp= 105 °C; see Figs 2 and 3;
averaged over any 20 ms period;
see also Figs 10 and 11
BYD77A to D − 2.00 A
BYD77E to G − 1.85 A
I
F(AV)
average forward current T
amb
=60°C; PCB mounting (see
Fig.16); see Figs 4 and 5;
averaged over any 20 ms period;
see also Figs 10 and 11
BYD77A to D − 0.85 A
BYD77E to G − 0.80 A
Page 3
1996 May 24 3
Philips Semiconductors Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYD77 series
ELECTRICAL CHARACTERISTICS
T
j
=25°C unless otherwise specified.
I
FRM
repetitive peak forward current Ttp= 105 °C; see Figs 6 and 7
BYD77A to D − 15 A
BYD77E to G − 13 A
I
FRM
repetitive peak forward current T
amb
=60°C; see Figs 8 and 9
BYD77A to D − 8.5 A
BYD77E to G − 8.0 A
I
FSM
non-repetitive peak forward current t = 10 ms half sine wave;
Tj=T
j max
prior to surge;
VR=V
RRMmax
− 25 A
E
RSM
non-repetitive peak reverse
avalanche energy
L = 120 mH; Tj=25°C prior to
surge; inductive load switched off
− 10 mJ
T
stg
storage temperature −65 +175 °C
T
j
junction temperature −65 +175 °C
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
forward voltage IF= 1 A; Tj=T
j max
;
see Figs 12 and 13
BYD77A to D −−0.75 V
BYD77E to G −−0.83 V
V
F
forward voltage IF=1A;
see Figs 12 and 13
BYD77A to D −−0.98 V
BYD77E to G −−1.05 V
V
(BR)R
reverse avalanche breakdown
voltage
IR= 0.1 mA
BYD77A 55 −−V
BYD77B 110 −−V
BYD77C 165 −−V
BYD77D 220 −−V
BYD77E 275 −−V
BYD77F 330 −−V
BYD77G 440 −−V
I
R
reverse current VR=V
RRMmax
;
see Fig.14
−− 1µA
V
R=VRRMmax
;
Tj= 165 °C; see Fig.14
−−100 µA
t
rr
reverse recovery time when switched from
IF= 0.5 A to IR=1A;
measured at IR= 0.25 A;
see Fig.18
BYD77A to D −−25 ns
BYD77E to G −−50 ns
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Page 4
1996 May 24 4
Philips Semiconductors Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYD77 series
THERMAL CHARACTERISTICS
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.16.
For more information please refer to the
‘General Part of Handbook SC01’
.
C
d
diode capacitance f = 1 MHz; VR=0V;
see Fig.15
BYD77A to D − 50 − pF
BYD77E to G − 40 − pF
maximum slope of reverse recovery
current
when switched from
I
F
= 1 A to VR≥ 30 V
and dIF/dt = −1A/µs;
see Fig.17
BYD77A to D −− 4A/µs
BYD77E to G −− 5A/µs
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-tp
thermal resistance from junction to tie-point 30 K/W
R
th j-a
thermal resistance from junction to ambient note 1 150 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
dI
R
dt
--------
Page 5
1996 May 24 5
Philips Semiconductors Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYD77 series
GRAPHICAL DATA
BYD77A toD
a = 1.42; VR=V
RRMmax
; δ = 0.5.
Switched mode application.
Fig.2 Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
handbook, halfpage
0 100 200
4
3
1
0
2
MCD598
Ttp ( C)
o
I
F(AV)
(A)
BYD77E to G
a = 1.42; VR=V
RRMmax
; δ = 0.5.
Switched mode application.
Fig.3 Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
handbook, halfpage
0
3
2
1
0
100 200
MCD596
o
tp
TC)(
I
F(AV)
(A)
BYD77A to D
a = 1.42; VR=V
RRMmax
; δ = 0.5.
Device mounted as shown in Fig.16.
Switched mode application.
Fig.4 Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
handbook, halfpage
0
1.2
0.8
0.4
0
100 200
MCD597
I
F(AV)
(A)
T ( C)
o
amb
Fig.5 Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
BYD77E to G
a = 1.42; VR=V
RRMmax
; δ = 0.5.
Device mounted as shown in Fig.16.
Switched mode application.
handbook, halfpage
0 100 200
1.0
0
MCD595
0.5
I
F(AV)
(A)
T ( C)
o
amb
Page 6
1996 May 24 6
Philips Semiconductors Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYD77 series
BYD77A to D
Ttp= 105 °C; R
th j-tp
= 30 K/W.
V
RRMmax
during 1 −δ; curves include derating for T
j max
at V
RRM
= 200 V.
Fig.6 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
handbook, full pagewidth
MCD593
10
-1
10
0
10
1
10
2
10
3
10
4
t
p
(ms)
10
-2
20
0
10
(A)
I
FRM
0.5
1
δ =
0.05
0.1
0.2
BYD77E to G
Ttp= 105°C; R
th j-tp
= 30 K/W.
V
RRMmax
during 1 −δ; curves include derating for T
j max
at V
RRM
= 400 V.
Fig.7 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
handbook, full pagewidth
MCD591
10
-1
10
0
10
1
10
2
10
3
10
4
t
p
(ms)
10
-2
20
0
10
(A)
I
FRM
0.5
1
0.2
0.1
δ =
0.05
Page 7
1996 May 24 7
Philips Semiconductors Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYD77 series
BYD77A to D
T
amb
=60°C; R
th j-a
= 150 K/W.
V
RRMmax
during 1 −δ; curves include derating for T
j max
at V
RRM
= 200 V.
Fig.8 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
handbook, full pagewidth
MCD592
10
-1
10
0
10
1
10
2
10
3
10
4
t
p
(ms)
10
-2
10
0
5
(A)
I
FRM
0.1
0.2
1
δ =
0.05
0.5
BYD77E to G
T
amb
=60°C; R
th j-a
= 150 K/W.
V
RRMmax
during 1 −δ; curves include derating for T
j max
at V
RRM
= 400 V.
Fig.9 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
handbook, full pagewidth
MCD590
10
-1
10
0
10
1
10
2
10
3
10
4
t
p
(ms)
10
-2
10
0
5
(A)
I
FRM
0.1
0.2
1
δ =
0.05
0.5
Page 8
1996 May 24 8
Philips Semiconductors Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYD77 series
BYD77A to D
a=I
F(RMS)/IF(AV)
; VR=V
RRMmax
; δ = 0.5.
Fig.10 Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function
of average forward current.
handbook, halfpage
02
2
0
MGC530
1
1
P
(W)
I
F(AV)
(A)
a=3 2
1.57 1.42
2.5
BYD77E to G
a=I
F(RMS)/IF(AV)
; VR=V
RRMmax
; δ = 0.5.
Fig.11 Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function
of average forward current.
handbook, halfpage
02
2
0
MGC529
1
1
P
(W)
I
F(AV)
(A)
a=3 2
1.57 1.42
2.5
BYD77A to D
Dotted line: Tj= 175 °C.
Solid line: Tj=25°C.
Fig.12 Forward current as a function of forward
voltage; maximum values.
handbook, halfpage
012
10
8
4
0
2
6
MCD594
VF (V)
I
F
(A)
BYD77E to G
Dotted line: Tj= 175 °C.
Solid line: Tj=25°C.
Fig.13 Forward current as a function of forward
voltage; maximum values.
handbook, halfpage
0123
10
I
F
0
8
MGC531
6
4
2
(A)
VF (V)
Page 9
1996 May 24 9
Philips Semiconductors Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYD77 series
Fig.14 Reverse current as a function of junction
temperature; maximum values.
handbook, halfpage
10
3
10
2
10
1
200
0
MGA853
100
T ( C)
j
o
I
R
( A)µ
VR=V
RRMmax
. f = 1 MHz; Tj=25°C.
Fig.15 Diode capacitance as a function of reverse
voltage; typical values.
handbook, halfpage
1
MCD608
10 10 10
1
10
10
V
R
(V)
C
d
(pF)
2
23
A, B, C, D
E, F, G
Fig.16 Printed-circuit board for surface mounting.
Dimensions in mm.
MSB213
4.5
2.5
1.25
50
50
Fig.17 Reverse recovery definitions.
dbook, halfpage
10%
100%
dI
dt
t
t
rr
I
F
I
R
MGC499
F
dI
dt
R
Page 10
1996 May 24 10
Philips Semiconductors Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYD77 series
handbook, full pagewidth
10 Ω
1 Ω
50 Ω
25 V
DUT
MAM057
+
t
rr
0.5
0
0.5
1
I
F
(A)
I
R
(A)
t
0.25
Fig.18 Test circuit and reverse recovery time waveform and definition.
Input impedance oscilloscope: 1 MΩ, 22 pF; tr≤ 7 ns.
Source impedance: 50 Ω; tr≤ 15 ns.
Page 11
1996 May 24 11
Philips Semiconductors Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYD77 series
PACKAGE OUTLINE
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Fig.19 SOD87.
Dimensions in mm.
The marking band indicates the cathode.
handbook, full pagewidth
MBA505
0.3
O
2.05
0.05
D =
3.5 0.2
D1 =
1.9
0.1
O
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