Datasheet BYD77F, BYD77D, BYD77C, BYD77B, BYD77A Datasheet (Philips)

DATA SH EET

Product specification
Supersedes data of 1996 May 24

1999 Nov 15

DISCRETE SEMICONDUCTORS

BYD77 series

Ultra fast low-loss
controlled avalanche rectifiers

b

ook, halfpage

M3D121

1999 Nov 15 2

Philips Semiconductors Product specification

Ultra fast low-loss
controlled avalanche rectifiers

BYD77 series

FEATURES

• Glass passivated

• High maximum operating

temperature

• Low leakage current

• Excellent stability

• Guaranteed avalanche energy

absorption capability

• Shipped in 8 mm embossed tape

• Smallest surface mount

rectifier outline.

DESCRIPTION

Cavity free cylindrical glass SOD87
package through Implotec

(1)

technology. This package is

hermetically sealed and fatigue free
as coefficients of expansion of all
used parts are matched.

(1) Implotec is a trademark of Philips.

handbook, 4 columns

MAM061

ka

Fig.1 Simplified outline (SOD87) and symbol.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

RRM

repetitive peak reverse voltage

BYD77A − 50 V
BYD77B − 100 V
BYD77C − 150 V
BYD77D − 200 V
BYD77E − 250 V
BYD77F − 300 V
BYD77G − 400 V

V

R

continuous reverse voltage

BYD77A − 50 V
BYD77B − 100 V
BYD77C − 150 V
BYD77D − 200 V
BYD77E − 250 V
BYD77F − 300 V
BYD77G − 400 V

I

F(AV)

average forward current Ttp= 105 °C; see Figs 2 and 3;

averaged over any 20 ms period;
see also Figs 10 and 11

BYD77A to D − 2.00 A
BYD77E to G − 1.85 A

I

F(AV)

average forward current T

amb

=60°C; PCB mounting (see
Fig.16); see Figs 4 and 5;
averaged over any 20 ms period;
see also Figs 10 and 11

BYD77A to D − 0.85 A
BYD77E to G − 0.80 A

1999 Nov 15 3

Philips Semiconductors Product specification

Ultra fast low-loss
controlled avalanche rectifiers

BYD77 series

ELECTRICAL CHARACTERISTICS

Tj=25°C unless otherwise specified.

I

FRM

repetitive peak forward current Ttp= 105 °C; see Figs 6 and 7

BYD77A to D − 15 A
BYD77E to G − 13 A

I

FRM

repetitive peak forward current T

amb

=60°C; see Figs 8 and 9

BYD77A to D − 8.5 A
BYD77E to G − 8.0 A

I

FSM

non-repetitive peak forward current t = 10 ms half sine wave; Tj=T

j max

prior to surge; VR=V

RRMmax

− 25 A

E

RSM

non-repetitive peak reverse
avalanche energy

L = 120 mH; Tj=25°C prior to
surge; inductive load switched off

− 10 mJ

T

stg

storage temperature −65 +175 °C

T

j

junction temperature −65 +175 °C

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

F

forward voltage IF= 1 A; Tj=T

j max

;

see Figs 12 and 13

BYD77A to D −−0.75 V
BYD77E to G −−0.83 V

V

F

forward voltage IF=1A;

see Figs 12 and 13

BYD77A to D −−0.98 V
BYD77E to G −−1.05 V

V

(BR)R

reverse avalanche breakdown
voltage

IR= 0.1 mA

BYD77A 55 −−V
BYD77B 110 −−V
BYD77C 165 −−V
BYD77D 220 −−V
BYD77E 275 −−V
BYD77F 330 −−V
BYD77G 440 −−V

I

R

reverse current VR=V

RRMmax

;

see Fig.14

−− 1µA

V

R=VRRMmax

;

Tj= 165 °C; see Fig.14

−−100 µA

t

rr

reverse recovery time when switched from

IF= 0.5 A to IR=1A;
measured at IR= 0.25 A;
see Fig.18

BYD77A to D −−25 ns
BYD77E to G −−50 ns

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

1999 Nov 15 4

Philips Semiconductors Product specification

Ultra fast low-loss
controlled avalanche rectifiers

BYD77 series

THERMAL CHARACTERISTICS

Note

1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.16.
For more information please refer to the

“General Part of associated Handbook”

.

C

d

diode capacitance f = 1 MHz; VR=0V;

see Fig.15

BYD77A to D − 50 − pF
BYD77E to G − 40 − pF

maximum slope of reverse recovery
current

when switched from
I

F

=1AtoVR≥30 V and
dIF/dt = −1A/µs;
see Fig.17

BYD77A to D −− 4A/µs
BYD77E to G −− 5A/µs

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-tp

thermal resistance from junction to tie-point 30 K/W

R

th j-a

thermal resistance from junction to ambient note 1 150 K/W

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

dI

R

dt

--------

1999 Nov 15 5

Philips Semiconductors Product specification

Ultra fast low-loss
controlled avalanche rectifiers

BYD77 series

GRAPHICAL DATA

BYD77A toD

a = 1.42; VR=V

RRMmax

; δ = 0.5.

Switched mode application.

Fig.2 Maximum permissible average forward

current asa functionoftie-point temperature
(including losses due to reverse leakage).

handbook, halfpage

0 100 200

4

3

1

0

2

MCD598

Ttp ( C)

o

I

F(AV)

(A)

BYD77E to G

a = 1.42; VR=V

RRMmax

; δ = 0.5.

Switched mode application.

Fig.3 Maximum permissible average forward

current asa functionof tie-pointtemperature
(including losses due to reverse leakage).

handbook, halfpage

0

3

2

1

0

100 200

MCD596

o

tp

TC)(

I

F(AV)

(A)

BYD77A to D

a = 1.42; VR=V

RRMmax

; δ = 0.5.
Device mounted as shown in Fig.16.
Switched mode application.

Fig.4 Maximum permissible average forward

currentas afunction ofambienttemperature
(including losses due to reverse leakage).

handbook, halfpage

0

1.2

0.8

0.4

0

100 200

MCD597

I

F(AV)

(A)

T ( C)

o

amb

Fig.5 Maximum permissible average forward

currentas afunction ofambient temperature
(including losses due to reverse leakage).

BYD77E to G

a = 1.42; VR=V

RRMmax

; δ = 0.5.
Device mounted as shown in Fig.16.
Switched mode application.

handbook, halfpage

0 100 200

1.0

0

MCD595

0.5

I

F(AV)

(A)

T ( C)

o

amb

1999 Nov 15 6

Philips Semiconductors Product specification

Ultra fast low-loss
controlled avalanche rectifiers

BYD77 series

handbook, full pagewidth

MCD593

10

-1

10

0

10

1

10

2

10

3

10

4

t

p

(ms)

10

-2

20

0

10

(A)

I

FRM

0.5

1

δ =

0.05

0.1

0.2

BYD77A to D

Ttp= 105 °C; R

th j-tp

= 30 K/W.

V

RRMmax

during 1 −δ; curves include derating for T

j max

at V

RRM

= 200 V.

Fig.6 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.

handbook, full pagewidth

MCD591

10

-1

10

0

10

1

10

2

10

3

10

4

t

p

(ms)

10

-2

20

0

10

(A)

I

FRM

0.5
1

0.2

0.1

δ =

0.05

BYD77E to G

Ttp= 105°C; R

th j-tp

= 30 K/W.

V

RRMmax

during 1 −δ; curves include derating for T

j max

at V

RRM

= 400 V.

Fig.7 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.

1999 Nov 15 7

Philips Semiconductors Product specification

Ultra fast low-loss
controlled avalanche rectifiers

BYD77 series

handbook, full pagewidth

MCD592

10

-1

10

0

10

1

10

2

10

3

10

4

t

p

(ms)

10

-2

10

0

5

(A)

I

FRM

0.1

0.2

1

δ =

0.05

0.5

BYD77A to D

T

amb

=60°C; R

th j-a

= 150 K/W.

V

RRMmax

during 1 −δ; curves include derating for T

j max

at V

RRM

= 200 V.

Fig.8 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.

handbook, full pagewidth

MCD590

10

-1

10

0

10

1

10

2

10

3

10

4

t

p

(ms)

10

-2

10

0

5

(A)

I

FRM

0.1

0.2

1

δ =

0.05

0.5

BYD77E to G

T

amb

=60°C; R

th j-a

= 150 K/W.

V

RRMmax

during 1 −δ; curves include derating for T

j max

at V

RRM

= 400 V.

Fig.9 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.

1999 Nov 15 8

Philips Semiconductors Product specification

Ultra fast low-loss
controlled avalanche rectifiers

BYD77 series

BYD77A to D

a=I

F(RMS)/IF(AV)

; VR=V

RRMmax

; δ = 0.5.

Fig.10 Maximum steadystate powerdissipation

(forward plus leakage current losses,
excludingswitchinglosses) asa function
of average forward current.

handbook, halfpage

02

2

0

MGC530

1

1

P

(W)

I

F(AV)

(A)

a=3 2

1.57 1.42

2.5

BYD77E to G

a=I

F(RMS)/IF(AV)

; VR=V

RRMmax

; δ = 0.5.

Fig.11 Maximum steadystate powerdissipation

(forward plus leakage current losses,
excludingswitchinglosses) asa function
of average forward current.

handbook, halfpage

02

2

0

MGC529

1

1

P

(W)

I

F(AV)

(A)

a=3 2

1.57 1.42

2.5

BYD77A to D

Dotted line: Tj= 175 °C.
Solid line: Tj=25°C.

Fig.12 Forward current as a function of forward

voltage; maximum values.

handbook, halfpage

012

10

8

4

0

2

6

MCD594

VF (V)

I

F

(A)

BYD77E to G

Dotted line: Tj= 175 °C.
Solid line: Tj=25°C.

Fig.13 Forward current as a function of forward

voltage; maximum values.

handbook, halfpage

0123

10

I

F

0

8

MGC531

6

4

2

(A)

VF (V)

1999 Nov 15 9

Philips Semiconductors Product specification

Ultra fast low-loss
controlled avalanche rectifiers

BYD77 series

Fig.14 Reverse current as a function of junction

temperature; maximum values.

handbook, halfpage

10

3

10

2

10

1

200

0

MGA853

100

T ( C)

j

o

I

R

( A)µ

VR=V

RRMmax

. f = 1 MHz; Tj=25°C.

Fig.15 Diode capacitanceas a functionof reverse

voltage; typical values.

handbook, halfpage

1

MCD608

10 10 10

1

10

10

V

R

(V)

C

d

(pF)

2

23

A, B, C, D

E, F, G

MSB213

4.5

2.5

1.25

50

50

Fig.16 Printed-circuit board for surface mounting.

Dimensions in mm.

Fig.17 Reverse recovery definitions.

dbook, halfpage

10%

100%

dI

dt

t

t

rr

I

F

I

R

MGC499

F

dI

dt

R

1999 Nov 15 10

Philips Semiconductors Product specification

Ultra fast low-loss
controlled avalanche rectifiers

BYD77 series

handbook, full pagewidth

10 Ω

1 Ω

50 Ω

25 V

DUT

MAM057

+

t

rr

0.5

0

0.5

1.0

I

F

(A)

I

R

(A)

t

0.25

Fig.18 Test circuit and reverse recovery time waveform and definition.

Input impedance oscilloscope: 1 MΩ, 22 pF; tr≤ 7 ns.
Source impedance: 50 Ω; tr≤ 15 ns.

1999 Nov 15 11

Philips Semiconductors Product specification

Ultra fast low-loss
controlled avalanche rectifiers

BYD77 series

PACKAGE OUTLINE

DEFINITIONS

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in suchapplications do so at their ownrisk and agree to fullyindemnify Philips for any damages resultingfrom such
improper use or sale.

Data Sheet Status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

REFERENCES

OUTLINE

VERSION

EUROPEAN

PROJECTION

ISSUE DATE

IEC JEDEC EIAJ

SOD87 100H03

99-03-31
99-06-04

Hermetically sealed glass surface mounted package;
Implotec

TM(1)

technology; 2 connectors

SOD87

UNIT

D

mm

2.1

2.0

2.0

1.8

3.7

3.3

0.3

D1

H

L

DIMENSIONS (mm are the original dimensions)

H

DD

1

LL

(2)

0 1 2 mm

scale

Notes

1. Implotec is a trademark of Philips.

2. The marking indicates the cathode.

ka

© Philips Electronics N.V. SCA
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document doesnot formpart of any quotation or contract, is believed tobe accurateand reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

Internet: http://www.semiconductors.philips.com

1999

68

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Printed in The Netherlands 135002/03/pp12 Date of release:1999 Nov 15 Document order number: 9397 750 06272