Page 1
DISCRETE SEMICONDUCTORS
DATA SH EET
k, halfpage
M3D119
BYD73 series
Ultra fast low-loss
controlled avalanche rectifiers
Product specification
Supersedes data of 1996 May 24
File under Discrete Semiconductors, SC01
1996 Sep 18
Page 2
Philips Semiconductors Product specification
Ultra fast low-loss
BYD73 series
controlled avalanche rectifiers
FEATURES
• Glass passivated
• High maximum operating
temperature
DESCRIPTION
Cavity free cylindrical glass SOD81
package through Implotec
(1)
technology. This package is
• Low leakage current
• Excellent stability
• Guaranteed avalanche energy
absorption capability
handbook, 4 columns
• Available in ammo-pack.
Fig.1 Simplified outline (SOD81) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
RRM
repetitive peak reverse voltage
BYD73A − 50 V
BYD73B − 100 V
BYD73C − 150 V
BYD73D − 200 V
BYD73E − 250 V
BYD73F − 300 V
BYD73G − 400 V
V
R
continuous reverse voltage
BYD73A − 50 V
BYD73B − 100 V
BYD73C − 150 V
BYD73D − 200 V
BYD73E − 250 V
BYD73F − 300 V
BYD73G − 400 V
I
F(AV)
I
F(AV)
average forward current Ttp=55°C; lead length = 10 mm;
BYD73A to D − 1.75 A
BYD73E to G − 1.70 A
average forward current T
BYD73A to D − 1.00 A
BYD73E to G − 0.95 A
see Figs 2 and 3;
averaged over any 20 ms period;
see also Figs 10 and 11
=60°C; PCB mounting (see
amb
Fig.16); see Figs 4 and 5;
averaged over any 20 ms period;
see also Figs 10 and 11
hermetically sealed and fatigue free
as coefficients of expansion of all
used parts are matched.
(1) Implotec is a trademark of Philips.
ak
MAM123
1996 Sep 18 2
Page 3
Philips Semiconductors Product specification
Ultra fast low-loss
BYD73 series
controlled avalanche rectifiers
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
FRM
I
FRM
I
FSM
E
RSM
T
stg
T
j
ELECTRICAL CHARACTERISTICS
=25°C unless otherwise specified.
T
j
repetitive peak forward current Ttp=55°C; see Figs 6 and 7
BYD73A to D − 14 A
BYD73E to G − 15 A
repetitive peak forward current T
=60°C; see Figs 8 and 9
amb
BYD73A to D − 8.5 A
BYD73E to G − 9.5 A
non-repetitive peak forward current t = 10 ms half sine wave;
non-repetitive peak reverse
avalanche energy
Tj=T
VR=V
L = 120 mH; Tj=T
surge; inductive load switched off
prior to surge;
j max
RRMmax
j max
prior to
− 25 A
− 10 mJ
storage temperature −65 +175 °C
junction temperature −65 +175 °C
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
forward voltage IF= 1 A; Tj=T
BYD73A to D −−0.75 V
see Figs 12 and 13
j max
;
BYD73E to G −−0.83 V
V
F
forward voltage IF=1A;
BYD73A to D −−0.98 V
see Figs 12 and 13
BYD73E to G −−1.05 V
V
(BR)R
reverse avalanche breakdown
IR= 0.1 mA
voltage
BYD73A 55 −−V
BYD73B 110 −−V
BYD73C 165 −−V
BYD73D 220 −−V
BYD73E 275 −−V
BYD73F 330 −−V
BYD73G 440 −−V
I
R
reverse current VR=V
RRMmax
;
−− 1µA
see Fig.14
V
R=VRRMmax
;
−−100 µA
Tj= 165 °C; see Fig.14
t
rr
reverse recovery time when switched from
BYD73A to D −−25 ns
BYD73E to G −−50 ns
IF= 0.5 A to IR=1A;
measured at IR= 0.25 A;
see Fig.18
1996 Sep 18 3
Page 4
Philips Semiconductors Product specification
Ultra fast low-loss
BYD73 series
controlled avalanche rectifiers
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
C
d
dI
R
-------dt
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-tp
R
th j-a
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.16.
For more information please refer to the
diode capacitance f = 1 MHz; VR=0V;
BYD73A to D − 50 − pF
BYD73E to G − 40 − pF
maximum slope of reverse recovery
current
BYD73A to D −− 4A/µs
BYD73E to G −− 5A/µs
thermal resistance from junction to tie-point lead length = 10 mm 60 K/W
thermal resistance from junction to ambient note 1 120 K/W
see Fig.15
when switched from
I
= 1 A to VR≥ 30 V
F
and dIF/dt = −1A/µs;
see Fig.17
‘General Part of Handbook SC01.’
1996 Sep 18 4
Page 5
Philips Semiconductors Product specification
Ultra fast low-loss
controlled avalanche rectifiers
GRAPHICAL DATA
handbook, halfpage
2.0
I
F(AV)
(A)
1.6
1.2
0.8
0.4
0
0 200
BYD73A toD
a = 1.42; VR=V
Switched mode application.
RRMmax
lead length 10 mm
100
; δ = 0.5.
o
Ttp ( C)
MGC535
handbook, halfpage
2.0
I
F(AV)
(A)
1.6
1.2
0.8
0.4
0
0 200
BYD73E to G
a = 1.42; VR=V
Switched mode application.
RRMmax
lead length 10 mm
100
; δ = 0.5.
BYD73 series
MGC536
o
Ttp ( C)
Fig.2 Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
1.6
handbook, halfpage
I
F(AV)
(A)
1.2
0.8
0.4
0
0 200
BYD73A to D
a = 1.42; VR=V
Device mounted as shown in Fig.16.
Switched mode application.
RRMmax
; δ = 0.5.
100
T
amb
o
( C)
MGC538
Fig.3 Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
1.6
handbook, halfpage
I
F(AV)
(A)
1.2
0.8
0.4
0
0 200
BYD73E to G
a = 1.42; VR=V
Device mounted as shown in Fig.16.
Switched mode application.
RRMmax
; δ = 0.5.
100
T
amb
o
( C)
MGC537
Fig.4 Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
1996 Sep 18 5
Fig.5 Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
Page 6
Philips Semiconductors Product specification
Ultra fast low-loss
controlled avalanche rectifiers
16
handbook, full pagewidth
I
FRM
(A)
8
0
−2
10
δ =
0.05
0.1
0.2
0.5
1
−1
10
BYD73 series
MCD605
110
10
2
3
10
tp(ms)
4
10
BYD73A to D
Ttp=55°C; R
V
during 1 −δ; curves include derating for T
RRMmax
th j-tp
= 60 K/W.
j max
at V
RRM
= 200 V.
Fig.6 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
16
handbook, full pagewidth
I
FRM
(A)
8
0
-2
10
BYD73E to G
Ttp=55°C; R
V
RRMmax
th j-tp
during 1 −δ; curves include derating for T
= 60 K/W.
δ =
0.05
0.1
0.2
0.5
1
-1
10
j max
1
at V
RRM
= 400 V.
10 10
2
3
10
tp(ms)
MCD607
4
10
Fig.7 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
1996 Sep 18 6
Page 7
Philips Semiconductors Product specification
Ultra fast low-loss
controlled avalanche rectifiers
10
handbook, full pagewidth
δ =
0.05
I
FRM
(A)
0.1
5
0.2
0.5
1
0
-2
10
BYD73A to D
T
=60°C; R
amb
V
during 1 −δ; curves include derating for T
RRMmax
th j-a
= 120 K/W.
-1
10
j max
at V
RRM
= 200 V.
BYD73 series
MCD604
2
101
10
3
10
tp(ms)
4
10
Fig.8 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
10
handbook, full pagewidth
I
FRM
(A)
5
0
-2
10
BYD73E to G
T
=60°C; R
amb
V
during 1 −δ; curves include derating for T
RRMmax
th j-a
= 120 K/W.
δ =
0.05
0.1
0.2
0.5
1
-1
10
at V
RRM
= 400 V.
j max
101
2
10
3
10
tp(ms)
MCD606
4
10
Fig.9 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
1996 Sep 18 7
Page 8
Philips Semiconductors Product specification
Ultra fast low-loss
controlled avalanche rectifiers
handbook, halfpage
2
a=3
2.5
P
(W)
1
0
02
BYD73A to D
a=I
F(RMS)/IF(AV)
; VR=V
RRMmax
1
; δ = 0.5.
2
I
F(AV)
1.57
1.42
(A)
MGC539
handbook, halfpage
2
P
(W)
1
0
02
BYD73E to G
a=I
F(RMS)/IF(AV)
; VR=V
RRMmax
2.521.57
1
; δ = 0.5.
BYD73 series
MGC540
1.42a=3
I
(A)
F(AV)
Fig.10 Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function
of average forward current.
10
handbook, halfpage
I
F
(A)
8
6
4
2
0
012
VF (V)
MCD594
Fig.11 Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function
of average forward current.
10
handbook, halfpage
I
F
(A)
8
6
4
2
0
0123
VF (V)
MGC531
BYD73A to D
Dotted line: Tj= 175 °C.
Solid line: Tj=25°C.
Fig.12 Forward current as a function of forward
voltage; maximum values.
1996 Sep 18 8
BYD73E to G
Dotted line: Tj= 175 °C.
Solid line: Tj=25°C.
Fig.13 Forward current as a function of forward
voltage; maximum values.
Page 9
Philips Semiconductors Product specification
Ultra fast low-loss
controlled avalanche rectifiers
3
10
handbook, halfpage
I
R
( A)µ
2
10
10
1
0
100
o
T ( C)
j
MGA853
200
2
10
handbook, halfpage
C
d
(pF)
10
1
1
BYD73 series
MCD608
A, B, C, D
E, F, G
10 10 10
23
V
(V)
R
VR=V
. f = 1 MHz; Tj=25°C.
RRMmax
Fig.14 Reverse current as a function of junction
temperature; maximum values.
handbook, halfpage
50
25
7
50
2
3
MGA200
Fig.15 Diode capacitance as a function of reverse
voltage; typical values.
I
ndbook, halfpage
F
dI
F
dt
t
rr
dI
R
dt
I
R
10%
100%
t
MGC499
Dimensions in mm.
Fig.16 Device mounted on a printed-circuit board.
1996 Sep 18 9
Fig.17 Reverse recovery definitions.
Page 10
Philips Semiconductors Product specification
Ultra fast low-loss
controlled avalanche rectifiers
handbook, full pagewidth
10 Ω
25 V
DUT
+
1 Ω
50 Ω
I
(A)
0.25
R
I
(A)
0.5
0.5
BYD73 series
F
t
rr
0
1
t
MAM057
Input impedance oscilloscope: 1 MΩ, 22 pF; tr≤ 7 ns.
Source impedance: 50 Ω; tr≤ 15 ns.
Fig.18 Test circuit and reverse recovery time waveform and definition.
1996 Sep 18 10
Page 11
Philips Semiconductors Product specification
Ultra fast low-loss
controlled avalanche rectifiers
PACKAGE OUTLINE
handbook, full pagewidth
2.15
max
Dimensions in mm.
The marking band indicates the cathode.
5 max
3.8 max28 min 28 min
Fig.19 SOD81.
BYD73 series
0.81
max
MBC051
DEFINITIONS
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Sep 18 11
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