Datasheet BYD72E, BYD72C, BYD72A, BYD72G, BYD72F Datasheet (Philips)

DISCRETE SEMICONDUCTORS

DATA SH EET

ook, halfpage

M3D423

BYD72 series

Ultra fast low-loss
controlled avalanche rectifiers

Preliminary specification

1998 Dec 03

Philips Semiconductors Preliminary specification

Ultra fast low-loss

BYD72 series

controlled avalanche rectifiers

FEATURES

• Glass passivated

• High maximum operating

temperature

DESCRIPTION

Cavity free cylindrical glass SOD120
package through Implotec

(1)

technology. This package is

• Low leakage current

• Excellent stability

• Guaranteed avalanche energy

absorption capability

handbook, halfpage

ka

• Available in ammo-pack.

Fig.1 Simplified outline (SOD120) and symbol.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

RRM

repetitive peak reverse voltage

BYD72A − 50 V
BYD72B − 100 V
BYD72C − 150 V
BYD72D − 200 V
BYD72E − 250 V
BYD72F − 300 V
BYD72G − 400 V

V

R

continuous reverse voltage

BYD72A − 50 V
BYD72B − 100 V
BYD72C − 150 V
BYD72D − 200 V
BYD72E − 250 V
BYD72F − 300 V
BYD72G − 400 V

I

F(AV)

I

FSM

T

stg

T

j

average forward current T

BYD72A to D − 1.02 A
BYD72E to G − 0.95 A

=25°C; printed-circuit board

amb

mounting, pitch 5 mm, see Fig.8;
averaged over any 20 ms period;
see Figs 2 and 3

non-repetitive peak forward current t = 10 ms half sine wave;

Tj=25°C; VR=V

RRMmax

storage temperature −65 +175 °C
junction temperature see Fig.7 −65 +175 °C

hermetically sealed and fatigue free
as coefficients of expansion of all
used parts are matched.

(1) Implotec is a trademark of Philips.

MGL571

− 15 A

1998 Dec 03 2

Philips Semiconductors Preliminary specification

Ultra fast low-loss

BYD72 series

controlled avalanche rectifiers

ELECTRICAL CHARACTERISTICS

T

=25°C unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS MAX. UNIT

V

F

I

R

t

rr

V

FRM

THERMAL CHARACTERISTICS

forward voltage IF= 1 A; see Figs 4 and 5

BYD72A to D 0.98 V
BYD72E to G 1.05 V

reverse current VR=V

V

R=VRRMmax

RRMmax

; Tj= 165 °C; see Fig.6 100 µA

1 µA

reverse recovery time when switched from IF= 0.5 A to IR=1A;

BYD72A to D 25 ns

measured at IR= 0.25 A; see Fig.9

BYD72E to G 50 ns

forward recovery voltage when switched to IF= 1 A in 50 ns

BYD72A to D 1.55 V
BYD72E to G 3.40 V

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-a

thermal resistance from junction to ambient note 1 150 K/W

Note

1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper layer ≥40 µm,
pitch 5 mm; see Fig.8.

1998 Dec 03 3

Philips Semiconductors Preliminary specification

Ultra fast low-loss
controlled avalanche rectifiers

GRAPHICAL DATA

handbook, halfpage

2

I

F(AV)

(A)

1.6

1.2

0.8

0.4

0

BYD72A toD

a = 1.42; VR=V
Device mounted as shown in Fig.8.

40 80 120

0 200

; δ = 0.5.

RRMmax

160

T

Fig.2 Maximum permissible average forward

current as a function of ambient temperature
(including losses due to reverse leakage).

amb

MDA811

(°C)

BYD72 series

handbook, halfpage

1

I

F(AV)

(A)

0.8

0.6

0.4

0.2

0

BYD72E to G

a = 1.42; VR=V
Device mounted as shown in Fig.8.

40 80 120

0 200

; δ = 0.5.

RRMmax

160

T

amb

Fig.3 Maximum permissible average forward

current as a function of ambient temperature
(including losses due to reverse leakage).

MDA812

(°C)

10

handbook, halfpage

I

F

(A)

8

6

4

2

0

02

BYD72A to D

Dotted line: Tj= 175 °C.
Solid line: Tj=25°C.

0.4 0.8 1.2 1.6

MDA820

VF (V)

Fig.4 Forward current as a function of forward

voltage; typical values.

10

handbook, halfpage

I

F

(A)

8

6

4

2

0

02

BYD72E to G

Dotted line: Tj= 175 °C.
Solid line: Tj=25°C.

0.4 0.8 1.2 1.6

MDA821

VF (V)

Fig.5 Forward current as a function of forward

voltage; typical values.

1998 Dec 03 4

Philips Semiconductors Preliminary specification

Ultra fast low-loss
controlled avalanche rectifiers

10

handbook, halfpage

I

R

(µA)

1

−1

10

−2

10

MDA825

Tj (°C)

BYD72 series

300

MDA814

VR (V)

G

400

200

handbook, halfpage

T

j

(°C)

160

120

80

40

2000 40 80 120 160

0

0 100 200

Fig.6 Reverse current as a function of junction

temperature; typical values.

handbook, halfpage

50

5

3

50

2

3

MBK812

Fig.7 Maximum permissible junction temperature

as a function of reverse voltage.

Dimensions in mm.

Fig.8 Device mounted on a printed-circuit board.

1998 Dec 03 5

Philips Semiconductors Preliminary specification

Ultra fast low-loss
controlled avalanche rectifiers

handbook, full pagewidth

10 Ω

25 V

DUT

+

1 Ω

50 Ω

I

(A)

0.25

R

I

(A)

0.5

0.5

1.0

BYD72 series

F

t

rr

0

t

MAM057

Input impedance oscilloscope: 1 MΩ, 22 pF; tr≤ 7 ns.
Source impedance: 50 Ω; tr≤ 15 ns.

Fig.9 Test circuit and reverse recovery time waveform and definition.

1998 Dec 03 6

Philips Semiconductors Preliminary specification

Ultra fast low-loss
controlled avalanche rectifiers

PACKAGE OUTLINE

Hermetically sealed glass package; axial leaded; 2 leads

D

DIMENSIONS (mm are the original dimensions)

G

UNIT

mm

Note

1. The marking band indicates the cathode.

b

0.6

OUTLINE
VERSION

SOD120

D

max.

max.

IEC JEDEC EIAJ

L

1

min.

283.02.15

L

REFERENCES

BYD72 series

SOD120

(1)

b

G

1

L

0 2 4 mm

EUROPEAN

PROJECTION

scale

ISSUE DATE

98-05-25

DEFINITIONS

Data Sheet Status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1998 Dec 03 7

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© Philips Electronics N.V. 1998 SCA60
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Printed in The Netherlands 135106/00/01/pp8 Date of release: 1998 Dec 03 Document order number: 9397 750 04771