Datasheet BYD37G, BYD37D, BYD37M, BYD37K, BYD37J Datasheet (Philips)

DISCRETE SEMICONDUCTORS

b

DATA SH EET

ook, halfpage

M3D121

BYD37 series

Fast soft-recovery
controlled avalanche rectifiers

Product specification
Supersedes data of 1996 Jun 05

1999 Nov 16

Philips Semiconductors Product specification

Fast soft-recovery

BYD37 series

controlled avalanche rectifiers

FEATURES

• Glass passivated

• High maximum operating

temperature

• Low leakage current

• Excellent stability

• Guaranteed avalanche energy

absorption capability

• Smallest surface mount rectifier
outline

• Shipped in 8 mm embossed tape.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

RRM

repetitive peak reverse voltage

BYD37D − 200 V
BYD37G − 400 V
BYD37J − 600 V
BYD37K − 800 V
BYD37M − 1000 V

V

R

continuous reverse voltage

BYD37D − 200 V
BYD37G − 400 V
BYD37J − 600 V
BYD37K − 800 V
BYD37M − 1000 V

I

F(AV)

I

F(AV)

I

FRM

I

FSM

average forward current Ttp= 105 °C; see Fig.2;

average forward current T

repetitive peak forward current Ttp= 105 °C; see Fig.4 − 13 A

non-repetitive peak forward current t = 10 ms half sine wave; Tj=T

DESCRIPTION

Cavity free cylindrical glass package
through Implotec

(1)

technology.

This package is hermetically sealed

handbook, 4 columns

ka

Fig.1 Simplified outline (SOD87) and symbol.

averaged over any 20 ms period;
see also Fig.6

=60°C; PCB mounting (see

amb

Fig.11); see Fig.3;
averaged over any 20 ms period;
see also Fig.6

T

=60°C; see Fig.5 − 5.5 A

amb

prior to surge; VR=V

RRMmax

and fatigue free as coefficients of
expansion of all used parts are
matched.

(1) Implotec is a trademark of Philips.

MAM061

− 1.5 A

− 0.6 A

j max

− 20 A

1999 Nov 16 2

Philips Semiconductors Product specification

Fast soft-recovery

BYD37 series

controlled avalanche rectifiers

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

E

RSM

non-repetitive peak reverse
avalanche energy

BYD37D to J − 10 mJ
BYD37K and M − 7mJ

T

stg

T

j

storage temperature −65 +175 °C
junction temperature see Fig.7 −65 +175 °C

ELECTRICAL CHARACTERISTICS

Tj=25°C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

V

F

(BR)R

forward voltage IF= 1 A; Tj=T

reverse avalanche breakdown
voltage

BYD37D 300 −−V
BYD37G 500 −−V
BYD37J 700 −−V
BYD37K 900 −−V
BYD37M 1100 −−V

I

R

t

rr

reverse current VR=V

reverse recovery time when switched from

BYD37D to J −−250 ns
BYD37K and M −−300 ns

C

d

dI

-------­dt

R

diode capacitance f = 1 MHz; VR=0;

maximum slope of reverse recovery
current

BYD37D to J −− 6A/µs
BYD37K and M −− 5A/µs

L = 120 mH; Tj=T

j max

prior to

surge; inductive load switched off

j max

;

−−1.1 V

see Fig.8
I

=1A;

F

−−1.3 V

see Fig.8
IR= 0.1 mA

; see Fig.9 −− 1µA

RRMmax

V

R=VRRMmax

;

−−100 µA

Tj= 165 °C; see Fig.9

IF= 0.5 A to IR=1A;
measured at IR= 0.25A;
see Fig.12

− 20 − pF

see Fig.10
when switched from

=1AtoVR≥30 V and

I

F

dIF/dt = −1A/µs;
see Fig.13

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R
R

th j-tp
th j-a

thermal resistance from junction to tie-point 30 K/W
thermal resistance from junction to ambient note 1 150 K/W

Note

1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.11.
For more information please refer to the

“General Part of associated Handbook”

.

1999 Nov 16 3

Philips Semiconductors Product specification

Fast soft-recovery
controlled avalanche rectifiers

GRAPHICAL DATA

handbook, halfpage

3

I

F(AV)

(A)

2

1

0

0 200

a =1.42; VR=V
Switched mode application.

RRMmax

; δ= 0.5.

100

o

T ( C)

tp

MGA854

0.8

handbook, halfpage

I

F(AV)

(A)

0.6

0.4

0.2

0

0 200

a = 1.42; VR=V
Device mounted as shown in Fig.11.
Switched mode application.

RRMmax

; δ = 0.5.

BYD37 series

100

T ( C)

amb

MGA855

o

Fig.2 Maximum permissible average forward

current asa function of tie-point temperature
(including losses due to reverse leakage).

16

handbook, full pagewidth

I

FRM

(A)

12

8

4

0

2

10

10

δ

= 0.05

0.1

0.2

0.5

1

1

11010

Fig.3 Maximum permissible average forward

current as afunction ofambient temperature
(including losses due to reverse leakage).

MLB268

2103

t (ms)

p

10

4

Ttp= 105 °C; R
V

during 1 −δ; curves include derating for T

RRMmax

th j-tp

= 30 K/W.

j max

at V

RRM

= 1000 V.

Fig.4 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.

1999 Nov 16 4

Philips Semiconductors Product specification

Fast soft-recovery
controlled avalanche rectifiers

I

FRM
(A)

6

δ

= 0.05

4

0.1

0.2

2

0.5
1

0

2

10

1

10

handbook, full pagewidth

11010

2103

BYD37 series

MLB267

4

t (ms)

p

10

T

=60°C; R

amb

V

during 1 −δ; curves include derating for T

RRMmax

th j-a

= 150 K/W.

j max

at V

RRM

= 1000 V.

Fig.5 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.

1.57

F(AV)

1.42

MGA869

200

handbook, halfpage

T

j

o

( C)

100

0

0 400 1200

DGJKM

800

2.4

handbook, halfpage

P

(W)

1.6

0.8

0

0

a = 3 2.5 2

0.8 1.6
I (A)

V (V)

R

MGA861

a=I

F(RMS)/IF(AV)

; VR=V

RRMmax

; δ = 0.5.

Fig.6 Maximumsteady state power dissipation

(forward plus leakage current losses,
excludingswitching losses) asa function
of average forward current.

1999 Nov 16 5

Solid line = VR.
Dotted line = V

RRM

; δ = 0.5.

Fig.7 Maximumpermissiblejunctiontemperature

as a function of reverse voltage.

Philips Semiconductors Product specification

Fast soft-recovery
controlled avalanche rectifiers

handbook, halfpage

6

I

F

(A)

4

2

0

032

1

V (V)

F

MGA850

3

10

handbook, halfpage

I

R

( A)µ

2

10

10

1

0

BYD37 series

100

o

T ( C)

j

MGA853

200

Dotted line: Tj= 175 °C.
Solid line: Tj=25°C.

Fig.8 Forward current as a function of forward

voltage; maximum values.

2

10

handbook, halfpage

C

d

(pF)

10

1

1

K, M

D, G, J

10

10

MGA862

2

V (V)

R

VR=V

RRMmax

.

Fig.9 Reverse current as a function of junction

temperature; maximum values.

50

4.5

50

2.5

3

10

1.25

MSB213

f = 1 MHz; Tj=25°C.

Fig.10 Diode capacitanceas afunction of reverse

voltage; typical values.

1999 Nov 16 6

Dimensions in mm.

Fig.11 Printed-circuit board for surface mounting.

Philips Semiconductors Product specification

Fast soft-recovery
controlled avalanche rectifiers

handbook, full pagewidth

10 Ω

25 V

DUT

+

1 Ω

50 Ω

I

(A)

0.25

R

I

(A)

0.5

0.5

1.0

BYD37 series

F

t

rr

0

t

MAM057

Input impedance oscilloscope: 1 MΩ, 22 pF; tr≤ 7 ns.
Source impedance: 50 Ω; tr≤ 15 ns.

Fig.12 Test circuit and reverse recovery time waveform and definition.

I

dbook, halfpage

F

dI

F

dt

t

rr

dI

R

dt

I

R

10%

100%

t

MGC499

Fig.13 Reverse recovery definitions.

1999 Nov 16 7

Philips Semiconductors Product specification

Fast soft-recovery
controlled avalanche rectifiers

PACKAGE OUTLINE

Hermetically sealed glass surface mounted package;
Implotec

DIMENSIONS (mm are the original dimensions)

Notes

1. Implotec is a trademark of Philips.

2. The marking indicates the cathode.

TM(1)

technology; 2 connectors

D1

UNIT

mm

D

2.1

2.0

OUTLINE
VERSION

SOD87 100H03

2.0

1.8

H

3.7

3.3

IEC JEDEC EIAJ

L

0.3

REFERENCES

BYD37 series

ka

(2)

DD

1

LL

H

0 1 2 mm

scale

EUROPEAN

PROJECTION

SOD87

ISSUE DATE

99-03-31
99-06-04

DEFINITIONS

Data Sheet Status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1999 Nov 16 8

Philips Semiconductors Product specification

Fast soft-recovery
controlled avalanche rectifiers

BYD37 series

NOTES

1999 Nov 16 9

Philips Semiconductors Product specification

Fast soft-recovery
controlled avalanche rectifiers

BYD37 series

NOTES

1999 Nov 16 10

Philips Semiconductors Product specification

Fast soft-recovery
controlled avalanche rectifiers

BYD37 series

NOTES

1999 Nov 16 11

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68

Printed in The Netherlands 135002/03/pp12 Date of release: 1999 Nov 16 Document order number: 9397750 06274