Page 1
DISCRETE SEMICONDUCTORS
DATA SH EET
book, halfpage
M3D121
BYD37 series
Fast soft-recovery
controlled avalanche rectifiers
Product specification
Supersedes data of April 1992
File under Discrete Semiconductors, SC01
1996 Jun 05
Page 2
Philips Semiconductors Product specification
Fast soft-recovery
BYD37 series
controlled avalanche rectifiers
FEATURES
• Glass passivated
• High maximum operating
temperature
DESCRIPTION
Cavity free cylindrical glass package
through Implotec
(1)
technology.
This package is hermetically sealed
• Low leakage current
• Excellent stability
• Guaranteed avalanche energy
handbook, 4 columns
ka
absorption capability
• Smallest surface mount rectifier
outline
• Shipped in 8 mm embossed tape.
Fig.1 Simplified outline (SOD87) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
RRM
repetitive peak reverse voltage
BYD37D − 200 V
BYD37G − 400 V
BYD37J − 600 V
BYD37K − 800 V
BYD37M − 1000 V
V
R
continuous reverse voltage
BYD37D − 200 V
BYD37G − 400 V
BYD37J − 600 V
BYD37K − 800 V
BYD37M − 1000 V
I
F(AV)
average forward current Ttp= 105 °C; see Fig.2;
averaged over any 20 ms period;
see also Fig.6
I
F(AV)
average forward current T
=60°C; PCB mounting (see
amb
Fig.11); see Fig.3;
averaged over any 20 ms period;
see also Fig.6
I
FRM
I
FSM
E
RSM
repetitive peak forward current Ttp= 105 °C; see Fig.4 − 13 A
=60°C; see Fig.5 − 5.5 A
T
amb
non-repetitive peak forward current t = 10 ms half sine wave;
non-repetitive peak reverse
avalanche energy
Tj=T
VR=V
L = 120 mH; Tj=T
surge; inductive load switched off
prior to surge;
j max
RRMmax
j max
BYD37D to J − 10 mJ
BYD37K and M − 7mJ
and fatigue free as coefficients of
expansion of all used parts are
matched.
(1) Implotec is a trademark of Philips.
MAM061
− 1.5 A
− 0.6 A
− 20 A
prior to
1996 Jun 05 2
Page 3
Philips Semiconductors Product specification
Fast soft-recovery
BYD37 series
controlled avalanche rectifiers
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
T
stg
T
j
ELECTRICAL CHARACTERISTICS
T
=25°C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
V
(BR)R
I
R
t
rr
C
d
dI
R
-------dt
storage temperature −65 +175 °C
junction temperature see Fig.7 −65 +175 °C
forward voltage IF= 1 A; Tj=T
j max
;
−−1.1 V
see Fig.8
I
=1A;
F
−−1.3 V
see Fig.8
reverse avalanche breakdown
IR= 0.1 mA
voltage
BYD37D 300 −−V
BYD37G 500 −−V
BYD37J 700 −−V
BYD37K 900 −−V
BYD37M 1100 −−V
reverse current VR=V
V
R=VRRMmax
; see Fig.9 −− 1µA
RRMmax
;
−−100 µA
Tj= 165 °C; see Fig.9
reverse recovery time when switched from
BYD37D to J −−250 ns
BYD37K and M −−300 ns
diode capacitance f = 1 MHz; VR=0V;
IF= 0.5 A to IR=1A;
measured at IR= 0.25A;
see Fig.12
− 20 − pF
see Fig.10
maximum slope of reverse recovery
current
BYD37D to J −− 6A/µs
BYD37K and M −− 5A/µs
when switched from
I
=1AtoVR≥30 V
F
and dIF/dt = −1A/µs;
see Fig.13
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
R
th j-tp
th j-a
thermal resistance from junction to tie-point 30 K/W
thermal resistance from junction to ambient note 1 150 K/W
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.11.
For more information please refer to the
‘General Part of Handbook SC01’
.
1996 Jun 05 3
Page 4
Philips Semiconductors Product specification
Fast soft-recovery
controlled avalanche rectifiers
GRAPHICAL DATA
handbook, halfpage
3
I
F(AV)
(A)
2
1
0
0 200
a =1.42; VR=V
Switched mode application.
RRMmax
; δ= 0.5.
100
o
T ( C)
tp
MGA854
0.8
handbook, halfpage
I
F(AV)
(A)
0.6
0.4
0.2
0
0 200
a =1.42; VR=V
Device mounted as shown in Fig.11.
Switched mode application.
RRMmax
; δ= 0.5.
BYD37 series
100
T ( C)
amb
MGA855
o
Fig.2 Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
16
handbook, full pagewidth
I
FRM
(A)
12
8
4
0
2
10
10
δ
= 0.05
0.1
0.2
0.5
1
1
11010
Fig.3 Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
MLB268
2103
t (ms)
p
10
4
Ttp= 105°C; R
V
during 1 −δ; curves include derating for T
RRMmax
th j-tp
= 30 K/W.
j max
at V
RRM
= 1000 V.
Fig.4 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
1996 Jun 05 4
Page 5
Philips Semiconductors Product specification
Fast soft-recovery
controlled avalanche rectifiers
I
FRM
(A)
6
δ
= 0.05
4
0.1
0.2
2
0.5
1
0
2
10
1
10
handbook, full pagewidth
11010
2103
BYD37 series
MLB267
4
t (ms)
p
10
T
=60°C; R
amb
V
during 1 −δ; curves include derating for T
RRMmax
th j-a
= 150 K/W.
j max
at V
RRM
= 1000 V.
Fig.5 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
1.57
F(AV)
1.42
MGA869
200
handbook, halfpage
T
j
o
( C)
100
0
0 400 1200
DGJKM
800
2.4
handbook, halfpage
P
(W)
1.6
0.8
0
0
a = 3 2.5 2
0.8 1.6
I (A)
V (V)
R
MGA861
a=I
F(RMS)/IF(AV)
; VR=V
RRMmax
; δ = 0.5.
Fig.6 Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function
of average forward current.
1996 Jun 05 5
Solid line = VR.
Dotted line = V
RRM
; δ = 0.5.
Fig.7 Maximum permissible junction temperature
as a function of reverse voltage.
Page 6
Philips Semiconductors Product specification
Fast soft-recovery
controlled avalanche rectifiers
handbook, halfpage
6
I
F
(A)
4
2
0
032
1
V (V)
F
MGA850
3
10
handbook, halfpage
I
R
( A)µ
2
10
10
1
0
BYD37 series
100
o
T ( C)
j
MGA853
200
Dotted line: Tj= 175 °C.
Solid line: Tj=25°C.
Fig.8 Forward current as a function of forward
voltage; maximum values.
2
10
handbook, halfpage
C
d
(pF)
10
1
1
K, M
D, G, J
10
10
MGA862
2
V (V)
R
VR=V
RRMmax
.
Fig.9 Reverse current as a function of junction
temperature; maximum values.
50
4.5
50
2.5
3
10
1.25
MSB213
f = 1 MHz; Tj=25°C.
Fig.10 Diode capacitance as a function of reverse
voltage; typical values.
1996 Jun 05 6
Dimensions in mm.
Fig.11 Printed-circuit board for surface mounting.
Page 7
Philips Semiconductors Product specification
Fast soft-recovery
controlled avalanche rectifiers
handbook, full pagewidth
10 Ω
25 V
DUT
+
1 Ω
50 Ω
I
(A)
(A)
0.25
R
I
0.5
0.5
BYD37 series
F
t
rr
0
1
t
MAM057
Input impedance oscilloscope: 1 MΩ, 22 pF; tr≤ 7 ns.
Source impedance: 50 Ω; tr≤ 15 ns.
Fig.12 Test circuit and reverse recovery time waveform and definition.
I
dbook, halfpage
F
dI
F
dt
t
rr
dI
R
dt
I
R
10%
100%
t
MGC499
Fig.13 Reverse recovery definitions.
1996 Jun 05 7
Page 8
Philips Semiconductors Product specification
Fast soft-recovery
controlled avalanche rectifiers
PACKAGE OUTLINE
handbook, full pagewidth
Dimensions in mm.
The marking band indicates the cathode.
2.05
O
D =
0.05
MBA505
Fig.14 SOD87.
0.3
3.5 0.2
O
D1 =
1.9
0.1
BYD37 series
DEFINITIONS
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Jun 05 8
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