Datasheet BYD17M, BYD17K, BYD17J-DE, BYD17J, BYD17G Datasheet (Philips)

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Page 1
DATA SH EET
Product specification Supersedes data of 1996 Sep 26
1999 Nov 11
DISCRETE SEMICONDUCTORS
BYD17 series
General purpose controlled avalanche rectifiers
b
ook, halfpage
M3D121
Page 2
1999 Nov 11 2
Philips Semiconductors Product specification
General purpose controlled avalanche rectifiers
BYD17 series
FEATURES
Glass passivated
High maximum operating
temperature
Low leakage current
Excellent stability
Guaranteed avalanche energy
absorption capability
Shipped in 8 mm embossed tape
Smallest surface mount rectifier
outline.
DESCRIPTION
Cavity free cylindrical glass package through Implotec
(1)
technology.
This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched.
(1) Implotec is a trademark of Philips.
MARKING
TYPE NUMBER MARKING CODE
BYD17D 17D PH BYD17G 17G PH BYD17J 17J PH BYD17K 17K PH BYD17M 17M PH
handbook, 4 columns
MAM061
ka
Fig.1 Simplified outline (SOD87) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
RRM
repetitive peak reverse voltage
BYD17D 200 V BYD17G 400 V BYD17J 600 V BYD17K 800 V BYD17M 1000 V
V
RWM
crest working reverse voltage
BYD17D 200 V BYD17G 400 V BYD17J 600 V BYD17K 800 V BYD17M 1000 V
V
R
continuous reverse voltage
BYD17D 200 V BYD17G 400 V BYD17J 600 V BYD17K 800 V BYD17M 1000 V
Page 3
1999 Nov 11 3
Philips Semiconductors Product specification
General purpose controlled avalanche rectifiers
BYD17 series
ELECTRICAL CHARACTERISTICS
Tj=25°C; unless otherwise specified.
THERMAL CHARACTERISTICS
Note
1. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper 40 µm, see Fig.9. For more information please refer to the
“General Part of associated Handbook”
.
I
F(AV)
average forward current Ttp= 105 °C;
averaged over any 20 ms period; see Figs 2 and 4
1.5 A
T
amb
=65°C; PCB mounting (see Fig.9); averaged over any 20 ms period; see Figs 3 and 4
0.6 A
I
FSM
non-repetitive peak forward current t = 10 ms half sinewave;
Tj=T
j max
prior to surge;
VR=V
RRMmax
20 A
E
RSM
non-repetitive peak reverse avalanche energy
L = 120 mH; Tj=T
j max
prior to
surge; inductive load switched off
7mJ
T
stg
storage temperature 65 +175 °C
T
j
junction temperature see Fig.5 65 +175 °C
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
forward voltage IF= 1 A; Tj=T
j max;
see Fig.6 −−0.93 V
I
F
= 1 A; see Fig.6 −−1.05 V
V
(BR)R
reverse avalanche breakdown voltage
IR= 0.1 mA
BYD17D 225 −−V BYD17G 450 −−V BYD17J 650 −−V BYD17K 900 −−V BYD17M 1100 −−V
I
R
reverse current VR=V
RRMmax
; see Fig.7 −−1µA
V
R=VRRMmax
; Tj= 165 °C; see Fig.7 −−100 µA
t
rr
reverse recovery time when switched from IF= 0.5 A to IR=1A;
measured at IR= 0.25 A; see Fig.10
3 −µs
C
d
diode capacitance VR= 0 V; f = 1 MHz; see Fig.8 21 pF
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-tp
thermal resistance from junction to tie-point 30 K/W
R
th j-a
thermal resistance from junction to ambient note 1 150 K/W
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Page 4
1999 Nov 11 4
Philips Semiconductors Product specification
General purpose controlled avalanche rectifiers
BYD17 series
GRAPHICAL DATA
Fig.2 Maximum permissible average forward
current as a function of tie-point temperature (including losses due to reverse leakage).
a =1.57; VR=V
RRMmax
; δ= 0.5.
handbook, halfpage
0 200160120
0
MBH394
1
2
3
8040
Ttp (°C)
I
F(AV)
(A)
0 200160120
0
MSC293
0.2
0.4
0.6
0.8
1.0
8040
T
amb
(°C)
I
F(AV)
(A)
Fig.3 Maximum permissible average forward
current as a function of ambient temperature (including losses due to reverse leakage).
a =1.57; VR=V
RRMmax
; δ= 0.5.
Device mounted as shown in Fig.9.
Fig.4 Maximum steady state power dissipation
(forward plus leakage current losses, excluding switchinglosses) as a function of average forward current.
a=I
F(RMS)/IF(AV)
; VR=V
RRMmax
; δ = 0.5.
handbook, halfpage
0 1.61.2
0
MBH395
0.5
1.0
1.5
2.0
2.5
0.80.4
P
(W)
I
F(AV)
(A)
a = 3
1.42
1.57
2.5
2
Solid line = VR. Dotted line = V
RRM
; δ = 0.5.
Fig.5 Maximum permissible junction temperature
as a function of reverse voltage.
handbook, halfpage
0
DGJKM
400 800 1200
200
0
100
50
150
MGC736
T
j
VR, V
RRM
(V)
( C)
o
Page 5
1999 Nov 11 5
Philips Semiconductors Product specification
General purpose controlled avalanche rectifiers
BYD17 series
Solid line: Tj=25°C. Dotted line: Tj= 175 °C.
Fig.6 Forward current as a function of forward
voltage; maximum values.
handbook, halfpage
0
6
4
2
0
21
MBG048
I
F
(A)
VF (V)
Fig.7 Reverse current as a function of junction
temperature; maximum values.
handbook, halfpage
2000
10
3
MGC739
10
2
10
1
16012040 80
(µA)
I
R
Tj (
o
C)
VR=V
RRMmax.
Fig.8 Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; Tj=25°C.
handbook, halfpage
1
MGC740
10 10
2
10
3
1
10
2
10
(pF)
C
d
VR (V)
MSB213
4.5
2.5
1.25
50
50
Fig.9 Printed-circuit board for surface mounting.
Dimensions in mm.
Page 6
1999 Nov 11 6
Philips Semiconductors Product specification
General purpose controlled avalanche rectifiers
BYD17 series
handbook, full pagewidth
10
1
50
25 V
DUT
MAM057
+
t
rr
0.5
0
0.5
1.0
I
F
(A)
I
R
(A)
t
0.25
Fig.10 Test circuit and reverse recovery time waveform and definition.
Input impedance oscilloscope: 1 M, 22 pF; tr≤ 7 ns. Source impedance: 50 ; tr≤ 15 ns.
Page 7
1999 Nov 11 7
Philips Semiconductors Product specification
General purpose controlled avalanche rectifiers
BYD17 series
PACKAGE OUTLINE
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC JEDEC EIAJ
SOD87 100H03
99-03-31 99-06-04
Hermetically sealed glass surface mounted package; Implotec
TM(1)
technology; 2 connectors
SOD87
UNIT
D
mm
2.1
2.0
2.0
1.8
3.7
3.3
0.3
D1
H
L
DIMENSIONS (mm are the original dimensions)
H
DD
1
LL
(2)
0 1 2 mm
scale
Notes
1. Implotec is a trademark of Philips.
2. The marking indicates the cathode.
ka
Page 8
© Philips Electronics N.V. SCA All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Internet: http://www.semiconductors.philips.com
1999
68
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Printed in The Netherlands 135002/03/pp8 Date of release: 1999 Nov 11 Document order number: 9397 750 06275
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