Page 1
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D119
BYD13 series
Controlled avalanche rectifiers
Product specification
Supersedes data of April 1992
File under Discrete Semiconductors, SC01
1996 May 24
Page 2
Philips Semiconductors Product specification
Controlled avalanche rectifiers BYD13 series
FEATURES
• Glass passivated
• High maximum operating
temperature
• Low leakage current
• Excellent stability
• Guaranteed avalanche energy
absorption capability
• Available in ammo-pack.
handbook, 4 columns
Fig.1 Simplified outline (SOD81) and symbol.
ak
MAM123
DESCRIPTION
MARKING
Cavity free cylindrical glass package
through Implotec
(1)
technology.
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
(1) Implotec is a trademark of Philips.
BYD13D 13D PH
BYD13G 13G PH
BYD13J 13J PH
BYD13K 13K PH
BYD13M 13M PH
TYPE NUMBER MARKING CODE
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
RRM
repetitive peak reverse voltage
BYD13D − 200 V
BYD13G − 400 V
BYD13J − 600 V
BYD13K − 800 V
BYD13M − 1000 V
V
RWM
crest working reverse voltage
BYD13D − 200 V
BYD13G − 400 V
BYD13J − 600 V
BYD13K − 800 V
BYD13M − 1000 V
V
R
continuous reverse voltage
BYD13D − 200 V
BYD13G − 400 V
BYD13J − 600 V
BYD13K − 800 V
BYD13M − 1000 V
1996 May 24 2
Page 3
Philips Semiconductors Product specification
Controlled avalanche rectifiers BYD13 series
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
F(AV)
I
FSM
E
RSM
T
stg
T
j
average forward current Ttp=55°C; lead length = 10 mm;
averaged over any 20 ms period;
see Figs 2 and 4
=65°C; PCB mounting
T
amb
(see Fig.9);
averaged over any 20 ms period;
see Figs 3 and 4
non-repetitive peak forward current t = 10 ms half sinewave;
non-repetitive peak reverse
avalanche energy
Tj=T
VR=V
L = 120 mH; Tj=T
surge; inductive load switched off
prior to surge;
j max
RRMmax
j max
prior to
storage temperature −65 +175 °C
junction temperature
see Fig.5
− 1.40 A
− 0.75 A
− 20 A
− 7
mJ
−65 +175 °C
ELECTRICAL CHARACTERISTICS
=25°C; unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
V
F
(BR)R
forward voltage IF=1A; Tj=T
I
= 1 A; see Fig.6 −−1.05 V
F
reverse avalanche
IR= 0.1 mA
see Fig.6 −−0.93 V
j max;
breakdown voltage
BYD13D 225 −−V
BYD13G 450 −−V
BYD13J 650 −−V
BYD13K 900 −−V
BYD13M 1100 −−V
I
R
t
rr
reverse current VR=V
V
R=VRRMmax
; see Fig.7 −−1µA
RRMmax
; Tj= 165 °C; see Fig.7 −−100 µA
reverse recovery time when switched from IF= 0.5 A to IR=1A;
− 3 −
µs
measured at IR= 0.25 A; see Fig.10
C
d
diode capacitance VR= 0 V; f = 1 MHz; see Fig.8 − 21 −
pF
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
R
th j-tp
th j-a
thermal resistance from junction to tie-point lead length = 10 mm 60 K/W
thermal resistance from junction to ambient note 1 120 K/W
Note
1. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper ≥40 µm, see Fig.9.
For more information please refer to the
“General Part of Handbook SC01”
.
1996 May 24 3
Page 4
Philips Semiconductors Product specification
Controlled avalanche rectifiers BYD13 series
GRAPHICAL DATA
2.0
handbook, halfpage
I
F(AV)
(A)
1.6
1.2
0.8
0.4
0
0 200
a =1.57; VR=V
Lead length 10 mm.
40 80 120 160
; δ= 0.5.
RRMmax
MBG039
Ttp (
Fig.2 Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
T
MBG055
amb
o
(
C)
1.0
handbook, halfpage
I
F(AV)
(A)
0.8
0.6
0.4
0.2
0
o
C)
a =1.57; VR=V
Device mounted as shown in Fig.9.
40 80 120 160
0 200
; δ= 0.5.
RRMmax
Fig.3 Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
1.2
2
I
F(AV)
MGC741
1.57
1.42
(A)
2.5
handbook, halfpage
P
(W)
2.0
1.5
1.0
0.5
0
0 0.4 0.8 1.6
a=I
F(RMS)/IF(AV)
; VR=V
RRMmax
a = 3
; δ= 0.5.
2.5
Fig.4 Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function
of average forward current.
RRM
MGC736
(V)
200
handbook, halfpage
T
j
o
( C)
150
100
50
0
0
Solid line =VR.
Dotted line =V
DGJKM
RRM
400 800 1200
; δ= 0.5.
VR, V
Fig.5 Maximum permissible junction temperature
as a function of reverse voltage.
1996 May 24 4
Page 5
Philips Semiconductors Product specification
Controlled avalanche rectifiers BYD13 series
handbook, halfpage
6
I
F
(A)
4
2
0
0
Solid line: Tj=25°C.
Dotted line: Tj= 175°C.
VF (V)
Fig.6 Forward current as a function of forward
voltage; maximum values.
MBG048
3
10
handbook, halfpage
I
R
(µA)
2
10
10
VR=V
1
RRMmax
.
21
MGC739
Tj (
2000
o
C)
16012040 80
Fig.7 Reverse current as a function of junction
temperature; maximum values.
2
10
handbook, halfpage
C
d
(pF)
10
1
1
f =1 MHz; Tj=25°C.
10 10
2
MGC740
VR (V)
Fig.8 Diode capacitance as a function of reverse
voltage; typical values.
handbook, halfpage
3
10
Dimensions in mm.
50
25
7
50
2
3
MGA200
Fig.9 Device mounted on a printed-circuit board.
1996 May 24 5
Page 6
Philips Semiconductors Product specification
Controlled avalanche rectifiers BYD13 series
I
(A)
I
R
(A)
0.5
0.25
0.5
1.0
F
t
rr
0
t
MAM057
handbook, full pagewidth
10 Ω
DUT
+
25 V
1 Ω
50 Ω
Input impedance oscilloscope: 1 MΩ, 22pF; tr≤ 7ns.
Source impedance: 50 Ω; tr≤ 15ns.
Fig.10 Test circuit and reverse recovery time waveform and definition.
1996 May 24 6
Page 7
Philips Semiconductors Product specification
Controlled avalanche rectifiers BYD13 series
PACKAGE OUTLINE
handbook, full pagewidth
Dimensions in mm.
2.15
max
5 max
3.8 max28 min 28 min
0.81
max
MBC051
Fig.11 SOD81.
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 May 24 7
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