Page 1
DISCRETE SEMICONDUCTORS
DATA SH EET
handbook, 2 columns
M3D117
BY8000 series
Fast high-voltage soft-recovery
controlled avalanche rectifiers
Product specification
Supersedes data of June 1994
File under Discrete Semiconductors, SC01
1996 May 24
Page 2
Philips Semiconductors Product specification
Fast high-voltage soft-recovery
controlled avalanche rectifiers
FEATURES
• Glass passivated
• High maximum operating
temperature
• Low leakage current
• Excellent stability
• Guaranteed avalanche energy
absorption capability
• Soft-recovery switching
characteristics
• Compact construction.
APPLICATIONS
• For colour television and monitors
up to 25 kHz
• High-voltage applications for:
– Multipliers
– Layer-wound diode-split-
transformers where controlled
avalanche is required.
DESCRIPTION
Rugged glass package, using a high
temperature alloyed construction.
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
The package is designed to be used
in an insulating medium such as
resin, oil or SF6 gas.
handbook, halfpage
k
Fig.1 Simplified outline (SOD61) and symbol.
BY8000 series
a
MAM163
MARKING
Cathode band colour codes
TYPE NUMBER PACKAGE CODE INNER BAND OUTER BAND
BY8004 SOD61AC violet black
BY8006 SOD61AD violet green
BY8008 SOD61AE violet red
BY8010 SOD61AF violet violet
BY8012 SOD61AH violet orange
BY8014 SOD61AI violet lilac
BY8016 SOD61AJ violet grey
1996 May 24 2
Page 3
Philips Semiconductors Product specification
Fast high-voltage soft-recovery
BY8000 series
controlled avalanche rectifiers
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
RRM
V
RW
I
F(AV)
I
FRM
P
RSM
T
stg
T
j
repetitive peak reverse voltage
BY8004 − 5kV
BY8006 − 8kV
BY8008 − 10 kV
BY8010 − 12 kV
BY8012 − 14 kV
BY8014 − 17 kV
BY8016 − 19 kV
working reverse voltage
BY8004 − 4kV
BY8006 − 6kV
BY8008 − 8kV
BY8010 − 10 kV
BY8012 − 12 kV
BY8014 − 14 kV
BY8016 − 16 kV
average forward current averaged over any
BY8004 − 20 mA
BY8006 − 10 mA
20 ms period;
see Figs 2 to 8
BY8008 − 5mA
BY8010 − 5mA
BY8012 − 5mA
BY8014 − 5mA
BY8016 − 3mA
repetitive peak forward current note 1 − 500 mA
non-repetitive peak reverse power dissipation t = 20 µs half sinewave;
BY8004 − 2.5 kW
Tj=T
prior to surge
j max
BY8006 − 3.5 kW
BY8008 − 4.2 kW
BY8010 − 5.2 kW
BY8012 − 7.0 kW
BY8014 − 7.8 kW
BY8016 − 9.1 kW
storage temperature −65 +120 °C
junction temperature −65 +120 °C
Note
1. Withstands peak currents during flash-over in a picture tube.
1996 May 24 3
Page 4
Philips Semiconductors Product specification
Fast high-voltage soft-recovery
BY8000 series
controlled avalanche rectifiers
ELECTRICAL CHARACTERISTICS
T
=25°C; unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
I
R
Q
r
t
f
t
rr
C
d
forward voltage IF= 100 mA; Tj=T
BY8004 −−20 V
see Figs 9 to 15
j max
;
BY8006 −−25 V
BY8008 −−30 V
BY8010 −−38 V
BY8012 −−50 V
BY8014 −−55 V
BY8016 −−63 V
reverse current VR=V
recovery charge when switched from IF= 100 mA to
; Tj= 120 °C −− 3µA
RWmax
−− 1nC
VR≥ 100 V and dIF/dt = −200 mA/µs;
see Fig.16
fall time when switched from IF= 100 mA to
80 −−ns
VR≥ 100 V and dIF/dt = −200 mA/µs;
see Fig.16
reverse recovery time when switched from IF= 2 mA to
−−100 ns
IR= 4 mA; measured at IR= 1 mA;
see Fig.17
diode capacitance VR= 0 V; f = 1 MHz
BY8004 − 0.90 − pF
BY8006 − 0.65 − pF
BY8008 − 0.55 − pF
BY8010 − 0.45 − pF
BY8012 − 0.35 − pF
BY8014 − 0.30 − pF
BY8016 − 0.25 − pF
1996 May 24 4
Page 5
Philips Semiconductors Product specification
Fast high-voltage soft-recovery
controlled avalanche rectifiers
GRAPHICAL DATA
20
handbook, halfpage
I
F(AV)
(mA)
16
12
8
4
0
0 100 200
BY8004.
a=I
F(RMS)/IF(AV)
a = 1.57: half sinewave.
a = 6.32: line output transformer application; see Fig.18.
; VR=V
Fig.2 Maximum permissible average forward
current as a function of ambient temperature.
a = 1.57
a = 6.32
RWmax
; R
th j-a
T ( C)
≤ 120 K/W.
amb
o
MBD301
BY8000 series
10
handbook, halfpage
I
F(AV)
(mA)
8
6
4
2
0
0 100 200
BY8006.
a=I
F(RMS)/IF(AV)
a = 1.57: half sinewave.
a = 6.32: line output transformer application; see Fig.18.
; VR=V
RWmax
a = 1.57
a = 6.32
; R
th j-a
T ( C)
≤ 120 K/W.
amb
Fig.3 Maximum permissible average forward
current as a function of ambient temperature.
MBD303
o
handbook, halfpage
5
I
F(AV)
(mA)
4
3
2
1
0
0 100 200
BY8008.
a=I
F(RMS)/IF(AV)
a = 1.57: half sinewave.
a = 6.32: line output transformer application; see Fig.18.
; VR=V
RWmax
; R
th j-a
a = 1.57a = 6.32
T ( C)
≤ 120 K/W.
amb
MBD305
o
Fig.4 Maximum permissible average forward
current as a function of ambient temperature.
handbook, halfpage
5
I
F(AV)
(mA)
4
3
2
1
0
0
BY8010.
a=I
F(RMS)/IF(AV)
a = 1.57: half sinewave.
a = 6.32: line output transformer application; see Fig.18.
; VR=V
a = 6.32
RWmax
a = 1.57
100 200
T ( C)
amb
; R
≤ 120 K/W.
th j-a
MBD307
o
Fig.5 Maximum permissible average forward
current as a function of ambient temperature.
1996 May 24 5
Page 6
Philips Semiconductors Product specification
Fast high-voltage soft-recovery
controlled avalanche rectifiers
handbook, halfpage
5
I
F(AV)
(mA)
4
3
2
1
0
0
BY8012.
a=I
F(RMS)/IF(AV)
a = 1.57: half sinewave.
a = 6.32: line output transformer application; see see Fig.18.
; VR=V
a = 6.32
RWmax
a = 1.57
100 200
T ( C)
amb
; R
≤ 120 K/W.
th j-a
MBD309
o
BY8000 series
handbook, halfpage
5
I
F(AV)
(mA)
4
3
2
1
0
0
BY8014.
a=I
F(RMS)/IF(AV)
a = 1.57: half sinewave.
a = 6.32: line output transformer application; see Fig.18.
a = 6.32
; VR=V
RWmax
a = 1.57
100 200
T ( C)
amb
; R
≤ 120 K/W.
th j-a
MBD311
o
Fig.6 Maximum permissible average forward
current as a function of ambient temperature.
handbook, halfpage
5
I
F(AV)
(mA)
4
3
2
1
0
0
BY8016.
a=I
F(RMS)/IF(AV)
a = 1.57: half sinewave.
a = 6.32: line output transformer application; see Fig.18.
; VR=V
a = 6.32
RWmax
a = 1.57
100 200
T ( C)
amb
; R
≤ 120 K/W.
th j-a
MBD313
o
Fig.7 Maximum permissible average forward
current as a function of ambient temperature.
200
handbook, halfpage
I
F
(mA)
160
120
80
40
0
BY8004.
Dotted line: Tj= 120 °C.
Solid line: Tj=25°C.
10 20 30 40
050
MBD300
V (V)
F
60
Fig.8 Maximum permissible average forward
current as a function of ambient temperature.
1996 May 24 6
Fig.9 Forward current as a function of maximum
forward voltage.
Page 7
Philips Semiconductors Product specification
Fast high-voltage soft-recovery
controlled avalanche rectifiers
200
handbook, halfpage
I
F
(mA)
160
120
80
40
0
BY8006.
Dotted line: Tj= 120 °C.
Solid line: Tj=25°C.
10 20 30 40
050
MBD302
V (V)
F
BY8000 series
200
handbook, halfpage
I
F
(mA)
160
120
80
40
0
60
BY8008.
Dotted line: Tj= 120 °C.
Solid line: Tj=25°C.
0 100
20 40 60 80
MBD304
V (V)
F
Fig.10 Forward current as a function of maximum
forward voltage.
200
handbook, halfpage
I
F
(mA)
160
120
80
40
0
BY8010.
Dotted line: Tj= 120 °C.
Solid line: Tj=25°C.
20 40 60 80
0 100
MBD306
V (V)
F
120
Fig.11 Forward current as a function of maximum
forward voltage.
200
handbook, halfpage
I
F
(mA)
160
120
80
40
0
BY8012.
Dotted line: Tj= 120 °C.
Solid line: Tj=25°C.
20 40 60 80
0 100
MBD308
V (V)
F
120
Fig.12 Forward current as a function of maximum
forward voltage.
1996 May 24 7
Fig.13 Forward current as a function of
maximum forward voltage.
Page 8
Philips Semiconductors Product specification
Fast high-voltage soft-recovery
controlled avalanche rectifiers
200
handbook, halfpage
I
F
(mA)
160
120
80
40
0
BY8014.
Dotted line: Tj= 120 °C.
Solid line: Tj=25°C.
20 40 60 80
0 100
MBD310
V (V)
F
120
200
handbook, halfpage
I
F
(mA)
160
120
80
40
0
0 200
BY8016.
Dotted line: Tj= 120 °C.
Solid line: Tj=25°C.
BY8000 series
40 80 120 160
MBD312
V (V)
F
Fig.14 Forward current as a function of maximum
forward voltage.
handbook, halfpage
I
F
dI
F
dt
Q
r
I
R
t
f
10%
90%
MRC129 - 1
Fig.15 Forward current as a function of maximum
forward voltage.
t
Fig.16 Reverse recovery definitions.
1996 May 24 8
Page 9
Philips Semiconductors Product specification
Fast high-voltage soft-recovery
controlled avalanche rectifiers
handbook, full pagewidth
0.1 µF
50 Ω
2 mA
I
F
(mA)
I
R
(mA)
BY8000 series
MBH420
2
t
rr
0
1
4
t
Rise time oscilloscope: tr< 7 ns.
Generator pulse width: 1.0 µs.
Fig.17 Test circuit and reverse recovery time waveform and definition.
APPLICATION INFORMATION
V
handbook, full pagewidth
V
R
DUT
I
V
I
o
V
o
R
V
RRM
MAM105 - 1
t
T
V
nom
RW
Fig.18 Typical operation circuit and voltage waveform.
1996 May 24 9
Page 10
Philips Semiconductors Product specification
Fast high-voltage soft-recovery
controlled avalanche rectifiers
PACKAGE OUTLINE
handbook, full pagewidth
2.5
max
Dimensions in mm.
SOD61 package specification
TYPE
NUMBER
BY8004 SOD61AC 30.4 8.3
BY8006 SOD61AD 30.2 8.7
BY8008 SOD61AE 30.0 9.1
BY8010 SOD61AF 29.8 9.5
BY8012 SOD61AH 29.3 10.5
BY8014 SOD61AI 28.8 11.5
BY8016 SOD61AJ 28.3 12.5
ka
PACKAGE
CODE
5 max
3
max
L
Fig.19 SOD61.
LG
L
min
(mm)
0.6
MBC899 - 1
BY8000 series
G
max
(mm)
DEFINITIONS
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 May 24 10
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