Page 1
Philips Semiconductors Preliminary specification
Damper diode BY359F-1500, BY359F-1500S
fast, high-voltage
FEATURES SYMBOL QUICK REFERENCE DATA
• Low forward volt drop VR = 1500 V
• Fast switching
• Soft recovery characteristic VF ≤ 1.8 V / 2 V
• High thermal cycling performance
• Isolated mounting tab I
GENERAL DESCRIPTION PINNING SOD100
Glass-passivated double diffused PIN DESCRIPTION
rectifierdiode featuring low forward
voltage drop, fast reverse recovery 1 cathode
and soft recovery characteristic.
Thedeviceisintendedforuse in TV 2 anode
receivers and PC monitors.
The BY359F series is supplied in
the conventional leaded SOD100
package.
k a
12
tab isolated
= 15.7 A
F(RMS)
I
≤ 60 A
FSM
trr ≤ 600 ns / 350 ns
case
12
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
RSM
V
RRM
V
RWM
I
F(peak)
I
F(RMS)
I
FRM
I
FSM
Peak non-repetitive reverse - 1500 V
voltage
Peak repetitive reverse voltage - 1500 V
Crest working reverse voltage - 1300 V
Peak forward current 16-32kHz TV BY359F-1500 - 10 A
31-70kHz monitor BY359F-1500S - 7 A
RMS forward current - 15.7 A
Peak repetitive forward current sinusoidal; a = 1.57 - 60 A
Peak non-repetitive forward t = 10 ms - 60 A
current t = 8.3 ms - 66 A
sinusoidal; Tj = 150 ˚C prior to surge;
with reapplied V
T
stg
T
j
Storage temperature -40 150 ˚C
Operating junction temperature - 150 ˚C
RWM(max)
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
R
th j-hs
th j-a
Thermal resistance junction to with heatsink compound - - 4.8 K/W
heatsink without heatsink compound - - 5.9 K/W
Thermal resistance junction to in free air. - 55 - K/W
ambient
September 1998 1 Rev 1.300
Page 2
Philips Semiconductors Preliminary specification
Damper diode BY359F-1500, BY359F-1500S
fast, high-voltage
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
BY359F-1500 BY359F-1500S
SYMBOL PARAMETER CONDITIONS TYP. MAX. TYP. MAX. UNIT
V
F
I
R
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS TYP. MAX. TYP. MAX. UNIT
t
rr
Q
s
Forward voltage IF = 20 A 1.3 1.8 1.5 2.0 V
IF = 10 A; Tj = 150˚C 1.00 1.5 1.25 1.75 V
Reverse current VR = 1300 V 10 100 10 100 µA
VR = 1300 V; 50 300 100 600 µA
Tj = 100 ˚C
BY359F-1500 BY359F-1500S
Reverse recovery time IF = 2 A; VR ≥ 30 V; 0.47 0.60 0.28 0.35 µs
Reverse recovery charge -dIF/dt = 20 A/µs 1.6 2.0 0.70 0.95 µC
V
fr
Peak forward recovery voltage IF = 10 A; 11.0 - 17.0 - V
dIF/dt = 30 A/µs
I
F
time
V
F
V
fr
V
F
time
Fig.2. Definition of V
fr
I
rrm
dI
F
dt
trr
time
Qs
25%
rrm
100%
I
F
I
R
Fig.1. Definition of trr, Qs and I
September 1998 2 Rev 1.300
Page 3
Philips Semiconductors Preliminary specification
Damper diode BY359F-1500, BY359F-1500S
fast, high-voltage
IFS(RMS) / A
80
BY359
70
60
IFSM
50
40
30
20
10
0
1ms 10ms 0.1s 1s 10s
tp / s
Fig.3. Maximum non-repetitive rms forward current.
IF = f(tp); sinusoidal current waveform; Tj = 150˚C prior
to surge with reapplied V
Transient thermal impedance, Zth j-hs (K/W)
10
1
0.1
p
t
0.01
0.001
1us 10us 100us 1ms 10ms 100ms 1s 10s
P
D
pulse width, tp (s)
.
RWM
p
t
D =
T
T
t
BY359F
Fig.4. Transient thermal impedance Zth = f(tp)
IF / A
30
Tj=150C
Tj=25C
20
10
0
0
typ
1.0 2.0
VF / V
max
BY359
Fig.5. BY359F-1500 forward characteristic IF = f(VF);
parameter T
IF / A
30
Tj=150C
Tj=25C
20
10
0
0
typ
1.0 2.0
j
BY359S
max
VF / V
Fig.6. BY359F-1500S forward characteristic
IF = f(VF); parameter T
j
September 1998 3 Rev 1.300
Page 4
Philips Semiconductors Preliminary specification
Damper diode BY359F-1500, BY359F-1500S
fast, high-voltage
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
3.5 max
not tinned
10.2
max
5.7
max
3.2
3.0
4.4
0.9
0.5
4.4
4.0
seating
plane
13.5
min
4.4
max
2.9 max
7.9
7.5
17
max
ka
M0.4
5.08
Fig.7. SOD100; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
0.9
0.7
top view
0.55 max
1.3
September 1998 4 Rev 1.300
Page 5
Philips Semiconductors Preliminary specification
Damper diode BY359F-1500, BY359F-1500S
fast, high-voltage
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
September 1998 5 Rev 1.300
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