Datasheet BY329X-1200, BY329X-1000, BY329F-800, BY329F-1200, BY329F-1000 Datasheet (Philips)

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Page 1
Philips Semiconductors Product specification
Rectifier diodes BY329F, BY329X series fast, soft-recovery
FEATURES SYMBOL QUICK REFERENCE DATA
• Low forward volt drop V
= 800 V/ 1000 V/ 1200 V
R
• Fast switching
• High thermal cycling performance
• Isolated mounting tab I
k a 12
F(AV)
FSM
= 8 A
≤ 65 A
trr ≤ 145 ns
GENERAL DESCRIPTION
Glass-passivated double diffused rectifier diodes featuring low forward voltage drop, fast reverse recovery and soft recoverycharacteristic. The devices areintended for usein TV receivers,monitors and switchedmodepower supplies.
The BY329F series is supplied in the conventional leaded SOD100 package. The BY329X series is supplied in the conventional leaded SOD113 package.
PINNING SOD100 SOD113
PIN DESCRIPTION
1 cathode 2 anode
tab isolated
case
12
case
12
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
BY329F / BY329X -800 -1000 -1200
V
RSM
V
RRM
V
RWM
I
F(AV)
I
F(RMS)
I
FRM
I
FSM
I2tI T
stg
T
j
1. Neglecting switching and reverse current losses.
Peak non-repetitive reverse - 800 1000 1200 V voltage Peak repetitive reverse voltage - 800 1000 1200 V Crest working reverse voltage - 600 800 1000 V
Average forward current
1
square wave; δ = 0.5; - 8 A Ths ≤ 83 ˚C sinusoidal; a = 1.57; - 7 A
Ths ≤ 90 ˚C RMS forward current - 11 A Peak repetitive forward current t = 25 µs; δ = 0.5; - 16 A
Ths ≤ 83 ˚C Peak non-repetitive forward t = 10 ms - 65 A current. t = 8.3 ms - 71 A
sinusoidal; Tj = 150 ˚C prior
to surge; with reapplied
V
2
t for fusing t = 10 ms - 28 A2s
RWM(max)
Storage temperature -40 150 ˚C Operating junction temperature - 150 ˚C
September 1998 1 Rev 1.100
Page 2
Philips Semiconductors Product specification
Rectifier diodes BY329F, BY329X series fast, soft-recovery
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
isol
V
isol
C
isol
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-hs
R
th j-a
Peak isolation voltage from SOD100 package; R.H. ≤ 65%; clean and - - 1500 V both terminals to external dustfree heatsink
R.M.S. isolation voltage from SOD113 package; f = 50-60 Hz; - - 2500 V both terminals to external sinusoidal waveform; R.H. ≤ 65%; clean heatsink and dustfree
Capacitance from pin 1 to f = 1 MHz - 10 - pF external heatsink
Thermal resistance junction to with heatsink compound - - 4.8 K/W heatsink without heatsink compound - - 5.9 K/W Thermal resistance junction to in free air. - 55 - K/W ambient
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
I
R
Forward voltage IF = 20 A - 1.5 1.85 V Reverse current VR = V
; Tj = 125 ˚C - 0.1 1.0 mA
RWM
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
t
rr
Q
s
dIR/dt Maximum slope of the reverse IF = 2 A; -dIF/dt = 20 A/µs - 50 60 A/µs
Reverse recovery time IF = 1 A; VR > 30 V; -dIF/dt = 50 A/µs - 125 145 ns Reverse recovery charge IF = 2 A; VR > 30 V; -dIF/dt = 20 A/µs - 0.5 0.7 µC
recovery current
September 1998 2 Rev 1.100
Page 3
Philips Semiconductors Product specification
Rectifier diodes BY329F, BY329X series fast, soft-recovery
I
F
dI
F
dt
trr
time
Qs
I
R
I
rrm
Fig.1. Definition of trr, Qs and I
PF / W
20
Vo = 1.25 V Rs = 0.03 Ohms
15
10
5
0
0 2 4 6 8 10 12
0.1
BY329
0.5
0.2
I
IF(AV) / A
25%
Ths(max) / C
t
p
T
rrm
D = 1.0
D =
Fig.2. Maximum forward dissipation, PF = f(I
square wave current waveform; parameter D = duty
cycle = tp/T
.
100%
54
78
102
t
p
T
126
t
150
);
F(AV)
IFS (RMS) / A
100
90 80 70 60 50 40 30 20 10
0
1ms 10ms 0.1s 1s 10s
IFSM
tp / s
BY329
Fig.4. Maximum non-repetitive rms forward current.
IF = f(tp); sinusoidal current waveform; Tj = 150˚C prior
to surge with reapplied V
IF / A
30
Tj = 150 C Tj = 25 C
20
10
typ
0
0 1
0.5 VF / V
1.5
RWM
max
.
BY229F
2
Fig.5. Typical and maximum forward characteristic;
IF = f(VF); parameter T
j
BY329
IF = 10 A
10 A
1 A
2 A 1 A
2.2
Ths(max) / C
a = 1.57
1.9
.
78
102
126
150
F(AV)
PF / W
15
Vo = 1.25 V
Rs = 0.03 Ohms
10
5
0
0 2 4 6 8
BY329
2.8
4
IF(AV) / A
Fig.3. Maximum forward dissipation, PF = f(I
sinusoidal current waveform; parameter a = form
factor = I
F(RMS)/IF(AV)
Qs / uC
10
Tj = 150 C Tj = 25 C
2 A
1
0.1 1 100
);
Fig.6. Maximum Qs at Tj = 25˚C and 150˚C
10
-dIF/dt (A/us)
September 1998 3 Rev 1.100
Page 4
Philips Semiconductors Product specification
Rectifier diodes BY329F, BY329X series fast, soft-recovery
trr / ns
1000
IF = 10 A
100
Tj = 150 C Tj = 25 C
10
1 10 100
-dIF/dt (A/us)
Fig.7. Maximum trr measured to 25% of I
and 150˚C
Cd / pF
100
10
BY329
10A
1 A
1A
; Tj = 25˚C
rrm
BY329
Transient thermal impedance, Zth j-hs (K/W)
10
1
0.1
p
D =
BY229F
t T
t
p
t
0.01
0.001 1us 10us 100us 1ms 10ms 100ms 1s 10s
P
D
pulse width, tp (s)
T
Fig.9. Transient thermal impedance Zth = f(tp)
1
1 100
Fig.8. Typical junction capacitance Cd at f = 1 MHz
10 1000
VR / V
Tj = 25˚C
;
September 1998 4 Rev 1.100
Page 5
Philips Semiconductors Product specification
Rectifier diodes BY329F, BY329X series fast, soft-recovery
MECHANICAL DATA
Dimensions in mm Net Mass: 2 g
3.5 max
not tinned
10.2 max
5.7
max
3.2
3.0
4.4
0.9
0.5
4.4
4.0
seating
plane
13.5 min
4.4
max
2.9 max
7.9
7.5 17
max
ka
M0.4
5.08
Fig.10. SOD100; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
0.9
0.7
top view
0.55 max
1.3
September 1998 5 Rev 1.100
Page 6
Philips Semiconductors Product specification
Rectifier diodes BY329F, BY329X series fast, soft-recovery
MECHANICAL DATA
Dimensions in mm
10.3 max
Net Mass: 2 g
3.2
3.0
Recesses (2x)
2.5
0.8 max. depth
3 max.
not tinned
13.5 min.
0.4
12
M
5.08
2.8
2.54
15.8 max.
3
Fig.11. SOD113; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
19
max.
seating
plane
0.5
2.5
4.6
max
2.9 max
6.4
0.6
2.5
15.8 max
1.0 (2x)
0.9
0.7
September 1998 6 Rev 1.100
Page 7
Philips Semiconductors Product specification
Rectifier diodes BY329F, BY329X series fast, soft-recovery
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
September 1998 7 Rev 1.100
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