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Drain Current
Continuous (TC= 25°C)
Avalanche Current (Note1)
Peak Diode Recovery dv/dt (Note3)
Power Dissipation (Note
2)
Maximum Junction Temperature
Storage Temperature Range
FEATURES
·RDSON≤5Ω @Vgs=10V, Id=1A
·Excellent R
DS(ON)
and Low Gate Charge
·Fast switching capability
·Lead free product is acquired
General Description
BXP2N65 is Bridgelux high voltage MOSFET family based on
advanced planar stripe DMOS technology. This advanced
MOSFET family has optimized on-state resistance, and also
provides superior switching performance and higher avalanche
energy strength. This device family is suitable for high efficiency
switch mode power supplies.
650V 2A N-Channel Enhancement Mode Power MOSFET
SYMBOL
SOT-223-3L TO-251L TO-252
ASSEMBLY MESSAGE
BXP2N65
ABSOLUTE MAXIMUM RATINGS
(TC=25°C unless otherwise noted)
Note: 1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L=37.5mH, VDD=50V, RG=25 Ω, Starting TJ = 25°C
3. ISD≤ 2.0A, di/dt ≤ 300A/µs, VDD≤ BV
, Starting TJ = 25°C
DSS

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Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
Breakdown Voltage Temperature
Coefficient
Drain-Source On-State Resistance
Forward Transconductance (Note4)
VDS=25V, VGS=0V,
f=1.0MHz
Reverse Transfer Capacitance
VDD=325V, ID=2 A, VGS =
10V ,RG=10Ω
(Note4,5)
VDS =520V, VGS =10V, ID
=2A
(Note4,5)
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
Diode Continuous Forward Current
Pulsed Drain-Source Current
VGS = 0 V, ISD = 2A
di/dt=100 A/µs (Note4,5)
THERMAL CHARACTERISTICS
BXP2N65
ELECTRICAL CHARACTERISTICS(T
=25℃,unless otherwise Noted)
J
Note:
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature

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Id,Drain-to-SourceCurrent(A)
Rds(on),Drain-to-Source Resistance(Ω)
Is,Reverse Drain Current(A)
V
GS
,Gate-to-Source Voltage(V)
TYPICAL CHARACTERISTICS
Figure1. Typical Output Characteristics Figure2. Typical Transfer Characteristics
BXP2N65
Figure3. On-Resistance versus Drain Current Figure4. Diode forward voltage versus Current
Figure5. Typical Capacitance versus V
DS
Figure6. Typical Gate Charge versus V
GS

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BVDSS,(Normalized)
Drain-to-Source Breakdown Voltage(V)
Rds(on),(Normalized)
Drain-to-Source on Resistance
TYPICAL CHARACTERISTICS(Cont.)
BXP2N65
Figure7. BV
Figure9. Maximum Safe Operating Area Figure10. Maximum Continuous Drain Current
Variation with Temperature Figure8. On-Resistance Variation with Temperature
DSS
versus Case Temperature

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TEST CIRCUITS AND WAVEFORMS
BXP2N65

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TEST CIRCUITS AND WAVEFORMS(Cont.)
BXP2N65

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Dimensions In Millimeters
SOT-223-3L Package
BXP2N65

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Dimensions In Millimeters
TO-251 Package
BXP2N65

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Dimensions In Millimeters
TO-252 Package
BXP2N65

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Revision history
Document revision history
BXP2N65

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BXP2N65
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