Datasheet BXP2N65U Specification

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Parameter
Symbol
Rating
Unit
BXP2N65U/D
BXP2N65N
Drain-Source Voltage
V
DSS
650
V
Drain Current Continuous (TC= 25°C)
I
D
2
A
Continuous (TC= 100°C)
1.21
A
Drain Current
Pulsed (Note1)
I
DM
8
A
Gate-Source Voltage
V
GSS
±30
V
Avalanche Energy
Single Pulse (Note2)
E
AS
75
mJ
Repetitive (Note1)
E
AR
6.5
mJ
Avalanche Current (Note1)
I
AR
1.1
A
Peak Diode Recovery dv/dt (Note3)
dv/dt
5
V/ns
Power Dissipation (Note
2)
TC=25°C
P
D
44
3
W
Derate above 25°C
0.35
0.024
W/°C
Maximum Junction Temperature
T
J
150
°C
Storage Temperature Range
T
STG
-55 to 150
°C
Product Name
Marking
Package
Packaging
BXP2N65N
BXP2N65
SOT-223-3L
Reel
BXP2N65U
BXP2N65
TO-251L
Tube
BXP2N65D
BXP2N65
TO-252
Tube/Reel
FEATURES
·RDSON≤5Ω @Vgs=10V, Id=1A
·Excellent R
DS(ON)
and Low Gate Charge
·Fast switching capability
·Lead free product is acquired
General Description
BXP2N65 is Bridgelux high voltage MOSFET family based on
advanced planar stripe DMOS technology. This advanced
MOSFET family has optimized on-state resistance, and also
provides superior switching performance and higher avalanche
energy strength. This device family is suitable for high efficiency
switch mode power supplies.
SYMBOL
SOT-223-3L TO-251L TO-252
ASSEMBLY MESSAGE
BXP2N65
ABSOLUTE MAXIMUM RATINGS
(TC=25°C unless otherwise noted)
Note1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L=37.5mH, VDD=50V, RG=25 Ω, Starting TJ = 25°C
3. ISD≤ 2.0A, di/dt ≤ 300A/µs, VDD≤ BV
, Starting TJ = 25°C
DSS
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Parameter
Symbol
Max.
Unit
BXP2N65U/D
BXP2N65N
Thermal Resistance, Junction-to-Case
R
θJC
2.85
41.7
°C / W
Thermal Resistance, Junction-to-Ambient
R
θJA
110
100
°C / W
Parameter
Symbol
Test Condition
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
VGS=0V, ID=250µA
650
V
Zero Gate Voltage Drain Current
I
DSS
VDS=650V, VGS=0V
1
uA
VDS=520V, TC = 125°C
100
uA
Gate-Body Leakage Current, Forward
I
GSS
VGS=30V
100
nA
Gate-Body Leakage Current, Reverse
VGS=-30V
-100
nA
Breakdown Voltage Temperature
Coefficient
BVDSS/
TJ
ID = 250 µA
0.62
V/
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
VDS=VGS, ID=250µA
24V
Drain-Source On-State Resistance
R
DS(ON)
VGS=10V, ID=1A
4.25Ω
Forward Transconductance (Note4)
gFSVDS = 50V, ID = 1A
1.8
S
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
VDS=25V, VGS=0V,
f=1.0MHz
325
pF
Output Capacitance
C
OSS
30
pF
Reverse Transfer Capacitance
C
RSS
5.2
pF
SWITCHING PARAMETERS
Turn-ON Delay Time
t
D(ON)
VDD=325V, ID=2 A, VGS =
10V ,RG=10Ω
(Note4,5)
7
ns
Turn-ON Rise Time
tR5
ns
Turn-OFF Delay Time
t
D(OFF)
26
ns
Turn-OFF Fall-Time
tF10.5
ns
Total Gate Charge(Note5)
Q
G
VDS =520V, VGS =10V, ID
=2A
(Note4,5)
8.5
nC
Gate Source Charge
QGS1.5
nC
Gate Drain Charge
QGD4
nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSDIS=2A, VGS=0V
1.4
V
Diode Continuous Forward Current
IS2
A
Pulsed Drain-Source Current
ISM8
A
Reverse Recovery Time
t
RR
VGS = 0 V, ISD = 2A
di/dt=100 A/µs (Note4,5)
400
ns
Reverse Recovery Charge
QRR1.15
uC
THERMAL CHARACTERISTICS
BXP2N65
ELECTRICAL CHARACTERISTICST
=25,unless otherwise Noted
J
Note
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
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Id,Drain-to-SourceCurrent(A)
Rds(on),Drain-to-Source Resistance(Ω)
Id,Drain Current(A)
Is,Reverse Drain Current(A)
C,Capacitance(pF)
V
GS
,Gate-to-Source Voltage(V)
TYPICAL CHARACTERISTICS
Figure1. Typical Output Characteristics Figure2. Typical Transfer Characteristics
BXP2N65
Figure3. On-Resistance versus Drain Current Figure4. Diode forward voltage versus Current
Figure5. Typical Capacitance versus V
DS
Figure6. Typical Gate Charge versus V
GS
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BVDSS,(Normalized)
Drain-to-Source Breakdown Voltage(V)
Rds(on),(Normalized)
Drain-to-Source on Resistance
Id,Drain Current(A)
Id,Drain Current(A)
TYPICAL CHARACTERISTICS(Cont.)
BXP2N65
Figure7. BV
Figure9. Maximum Safe Operating Area Figure10. Maximum Continuous Drain Current
Variation with Temperature Figure8. On-Resistance Variation with Temperature
DSS
versus Case Temperature
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TEST CIRCUITS AND WAVEFORMS
BXP2N65
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TEST CIRCUITS AND WAVEFORMS(Cont.)
BXP2N65
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Dimensions In Millimeters
Symbol
Min
Max
Note
A
6.20
6.60
e
2.28-2.30typ
b
0.66
0.82
b1
2.90
3.10
B
3.30
3.70
B1
6.83
7.15
C
1.45
1.80
C1
0.00
0.15
C2
0.20
0.35
L
0.76
1.16
θ0°10°
SOT-223-3L Package
BXP2N65
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Symbol
Dimensions In Millimeters
Dimensions In Inches
min.
max.
min.
max.
A
6.00
6.20
0.235
0.245
B
6.45
6.70
0.253
0.264
C
2.05
2.55
0.080
0.101
D
0.70
0.90
0.027
0.036
E
0.49
0.53
0.019
0.021
E1
0.97
1.20
0.038
0.048
e
2.28
2.31
0.089
0.091
L
9.11
9.55
0.358
0.376
L1
0.92
1.55
0.036
0.062
W
0.65
0.95
0.025
0.038
W1
0.75
1.35
0.029
0.054
TO-251 Package
BXP2N65
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Symbol
Dimensions In Millimeters
Dimensions In Inches
min.
max.
min.
max.
A
6.50
6.70
0.255
0.264
A1
5.25
5.38
0.206
0.212
B
9.80
10.40
0.385
0.410
B1
6.00
6.20
0.236
0.245
B2
2.70
3.10
0.106
0.123
C
0.49
0.52
0.019
0.021
D
2.20
2.40
0.086
0.095
E
2.18
2.39
0.085
0.095
F
0.74
0.80
0.029
0.032
H
0.00
0.30
0.000
0.012
h
0.00
0.13
0.000
0.006
L
6.50
6.70
0.255
0.264
φP
1.10
1.30
0.043
0.052
TO-252 Package
BXP2N65
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Date
Revision
Changes
16-Mar-2021
1.0
First release
28-Jul-2021
1.1
Corrected parameter
18-Aug-2021
1.2
Add POD
11-Oct-2021
2.0
Update package type
11-Nov-2021
2.1
Update POD
5-Jan-2022
2.2
Update parameter
Revision history
Document revision history
BXP2N65
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BXP2N65
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