Datasheet BSS138L, BVSS138L Specification

Page 1
BSS138L, BVSS138L
Power MOSFET 200 mA, 50 V
NChannel SOT23
Features
Low Threshold Voltage (V
: 0.5 V1.5 V) Makes it Ideal for
GS(th)
Low Voltage Applications
Miniature SOT23 Surface Mount Package Saves Board Space
BVSS Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AECQ101 Qualified and PPAP Capable
These Devices are PbFree and are RoHS Compliant
MAXIMUM RATINGS (T
Rating
DraintoSource Voltage V
GatetoSource Voltage Continuous V
Drain Current
Continuous @ T
Pulsed Drain Current (t
Total Power Dissipation @ TA = 25°C P
Operating and Storage Temperature
Range
Thermal Resistance,
JunctiontoAmbient
Maximum Lead Temperature for
Soldering Purposes, for 10 seconds
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
= 25°C unless otherwise noted)
A
Symbol Value Unit
DSS
GS
= 25°C
A
10 ms)
p
I
I
DM
TJ, T
R
T
D
q
D
55 to 150 °C
stg
JA
L
50 Vdc
± 20 Vdc
mA 200 800
225 mW
556 °C/W
260 °C
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200 mA, 50 V
NChannel
3
(PbFree)
(PbFree)
(PbFree)
= 3.5 W
3
2
MARKING DIAGRAM
J1 M G
G
1
3000 / Tape & Reel
3000 / Tape & Reel
10,000 / Tape & Reel
R
DS(on)
1
1
2
SOT23 CASE 318 STYLE 21
J1 = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device Package Shipping
BSS138LT1G SOT23
BVSS138LT1G SOT23
BSS138LT3G SOT23
†For information on tape and reel specifications,
including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2013
July, 2013 − Rev. 8
1 Publication Order Number:
BSS138LT1/D
Page 2
BSS138L, BVSS138L
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted)
A
Characteristic
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
(V
= 0 Vdc, ID = 250 mAdc)
GS
Zero Gate Voltage Drain Current
(V
= 25 Vdc, VGS = 0 Vdc, 25°C)
DS
= 50 Vdc, VGS = 0 Vdc, 25°C)
(V
DS
= 50 Vdc, VGS = 0 Vdc, 150°C)
(V
DS
GateSource Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc) I
ON CHARACTERISTICS (Note 1)
GateSource Threshold Voltage
(V
= VGS, ID = 1.0 mAdc)
DS
Static DraintoSource OnResistance
(V
= 2.75 Vdc, ID < 200 mAdc, TA = 40°C to +85°C)
GS
= 5.0 Vdc, ID = 200 mAdc)
(V
GS
Forward Transconductance
(V
= 25 Vdc, ID = 200 mAdc, f = 1.0 kHz)
DS
DYNAMIC CHARACTERISTICS
Input Capacitance (VDS = 25 Vdc, VGS = 0, f = 1 MHz) C
Output Capacitance (VDS = 25 Vdc, VGS = 0, f = 1 MHz) C
Transfer Capacitance (VDG = 25 Vdc, VGS = 0, f = 1 MHz) C
SWITCHING CHARACTERISTICS (Note 2)
TurnOn Delay Time
TurnOff Delay Time t
(VDD = 30 Vdc, ID = 0.2 Adc,)
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle 2%.
2. Switching characteristics are independent of operating junction temperature.
Symbol Min Typ Max Unit
V
(BR)DSS
I
DSS
GSS
V
GS(th)
r
DS(on)
g
t
d(on)
d(off)
fs
iss
oss
rss
50 Vdc
mAdc
±0.1
0.1
0.5
5.0
mAdc
0.5 1.5 Vdc
5.6
3.5
10
100 mmhos
40 50 pF
12 25
3.5 5.0
20
ns
20
W
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2
Page 3
BSS138L, BVSS138L
TYPICAL ELECTRICAL CHARACTERISTICS
0.8 TJ = 25°C
0.7
0.6
0.5
0.4
0.3
, DRAIN CURRENT (AMPS)
0.2
D
I
0.1
0
13 957
024 10
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
DS
VGS = 3.5 V
VGS = 3.25 V
VGS = 3.0 V
VGS = 2.75 V
VGS = 2.5 V
6
8
Figure 1. On−Region Characteristics
2.2
2
1.8
1.6
1.4
1.2
(NORMALIZED)
VGS = 10 V I
= 0.8 A
D
VGS = 4.5 V I
D
= 0.5 A
, VARIANCE (VOLTS)
0.9
0.8
0.7
0.6
0.5
0.4
0.3
, DRAIN CURRENT (AMPS)
D
0.2
I
0.1
0
1.25
1.125
1
VDS = 10 V
-55°C
1 1.5 2 2.5 3
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
ID = 1.0 mA
25°C
3.5
150°C
4
4.50.50
1
, DRAIN-TO-SOURCE RESISTANCE
0.8
DS(on)
R
0.6
-55 -5 45 95
T
, JUNCTION TEMPERATURE (°C)
J
Figure 3. OnResistance Variation with
Temperature
10
VDS = 40 V T
= 25°C
J
8
6
4
ID = 200 mA
2
, GATE-TO-SOURCE VOLTAGE (VOLTS)
GS
V
0
0
500
1000
Q
, TOTAL GATE CHARGE (pC)
T
1500
Figure 5. Gate Charge
2000
145
2500 3000
0.875
gs(th)
V
0.75
-55 -5 45 95 145
-30 20 70 120
T
, JUNCTION TEMPERATURE (°C)
J
Figure 4. Threshold Voltage Variation
with Temperature
1.0E-5
1.0E-6
1.0E-7
1.0E-8
, DRAIN-TO-SOURCE LEAKAGE (A)
DSS
I
1.0E-9 10 15 20 25 30 35
, DRAIN-TO-SOURCE VOLTAGE (V)
V
DS
Figure 6. IDSS
150°C
125°C
40
505045
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3
Page 4
BSS138L, BVSS138L
TYPICAL ELECTRICAL CHARACTERISTICS
10
VGS = 2.5 V
9
8
7
6
5
4
3
2
, DRAIN-TO-SOURCE RESISTANCE (OHMS)
1
0 0.1 0.2
DS(on)
R
0.05 0.15 0.25
ID, DRAIN CURRENT (AMPS)
Figure 7. On−Resistance versus Drain Current
6
VGS = 4.5 V
5.5
5
4.5
4
3.5
3
2.5
2
, DRAIN-TO-SOURCE RESISTANCE (OHMS)
1.5
1
DS(on)
R
0 0.2 0.40.05
0.1 0.3 0.5
I
, DRAIN CURRENT (AMPS)
D
0.25 0.450.15 0.35
150°C
25°C
-55°C
150°C
25°C
-55°C
8
7
6
5
4
3
2
, DRAIN-TO-SOURCE RESISTANCE (OHMS)
1
DS(on)
R
VGS = 2.75 V
0 0.1 0.2
0.05 0.15 0.25
, DRAIN CURRENT (AMPS)
I
D
Figure 8. OnResistance versus Drain Current
4.5 VGS = 10 V
4
3.5
3
2.5
2
1.5
, DRAIN-TO-SOURCE RESISTANCE (OHMS)
1
DS(on)
R
0 0.2 0.40.05
0.1 0.3 0.5
, DRAIN CURRENT (AMPS)
I
D
0.25 0.450.15 0.35
150°C
25°C
-55°C
150°C
25°C
-55°C
Figure 9. On−Resistance versus Drain Current
1
0.1
0.01
, DIODE CURRENT (AMPS)
D
I
0.001 0 0.2 0.4 0.6
TJ = 150°C
0.8
VSD, DIODE FORWARD VOLTAGE (VOLTS)
Figure 11. Body Diode Forward Voltage
-55°C25°C
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4
120
100
Figure 10. OnResistance versus Drain
Current
80
60
C
iss
40
C
20
C
rss
0
0
oss
510
15
Figure 12. Capacitance
201.0 1.2
25
Page 5
BSS138L, BVSS138L
PACKAGE DIMENSIONS
SOT23 (TO236)
CASE 31808
ISSUE AP
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
D
H
SEE VIEW C
E
c
0.25
3
E
12
b
e
q
A
L
A1
L1
VIEW C
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS.
DIMAMIN NOM MAX MIN
A1 0.01 0.06 0.10 0.001
b 0.37 0.44 0.50 0.015 c 0.09 0.13 0.18 0.003 D 2.80 2.90 3.04 0.110 E 1.20 1.30 1.40 0.047 e 1.78 1.90 2.04 0.070 L 0.10 0.20 0.30 0.004
L1
H
E
STYLE 21:
PIN 1. GATE
MILLIMETERS
0.89 1.00 1.11 0.035
0.35 0.54 0.69 0.014 0.021 0.029
2.10 2.40 2.64 0.083 0.094 0.104 0 −−− 10 0 −−− 10q°°°°
2. SOURCE
3. DRAIN
INCHES
NOM MAX
0.040 0.044
0.002 0.004
0.018 0.020
0.005 0.007
0.114 0.120
0.051 0.055
0.075 0.081
0.008 0.012
SOLDERING FOOTPRINT*
0.95
0.95
0.037
0.9
0.035
0.8
0.031
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
0.037
SCALE 10:1
2.0
0.079
ǒ
inches
mm
Ǔ
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BSS138LT1/D
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