Page 1
TEC
MAGNA
Magnatec. Telephone (01455) 554711. Fax (01455) 558843
Prelim. 01/97
BUZ907DP
BUZ908DP
V
DSX
Drain – Source Voltage
V
GSS
Gate – Source Voltage
I
D
Continuous Drain Current
I
D(PK)
Body Drain Diode
P
D
Total Power Dissipation @ T
case
= 25°C
T
stg
Storage Temperature Range
T
j
Maximum Operating Junction Temperature
R
θJC
Thermal Resistance Junction – Case
±14V
-16A
-16A
250W
–55 to 150°C
150°C
0.5°C/W
MECHANICAL DATA
Dimensions in mm
123
0.6
2.8
5.020.0
5.45
5.45
1.2
2.0
3.4
2.0
1.0
3.3 Dia.
P–CHANNEL
POWER MOSFET
FEATURES
• HIGH SPEED SWITCHING
• SEMEFAB DESIGNED AND DIFFUSED
• HIGH VOLTAGE (220V & 250V)
• HIGH ENERGY RATING
• ENHANCEMENT MODE
• INTEGRAL PROTECTION DIODES
• COMPLIMENTARY N–CHANNEL
BUZ902DP & BUZ903DP
Pin 1 – Gate
TO-3PBL
Pin 2 – Source
Case – Source
Pin 3 – Drain
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
POWER MOSFETS FOR
AUDIO APPLICATIONS
BUZ907DP
-220V
BUZ908DP
-250V
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-220
-250
±14
-0.10 -1.5
-12
0.75
-10
-10
0.7 4
V
V
V
V
V
Ω
mA
mA
S
VGS= 10V BUZ907DP
ID= -10mA BUZ908DP
VDS= 0 IG= ±100µA
VDS= -10V ID= -100mA
VGD= 0 ID= -16A
VGS= -10 ID= -16A
VDS= -220V
BUZ907DP
VGS= 10V
VDS= -250V
BUZ908DP
VDS= -10V ID= -3A
BV
DSX
Drain – Source Breakdown Voltage
BV
GSS
Gate – Source Breakdown Voltage
V
GS(OFF)
Gate – Source Cut–Off Voltage
V
DS(SAT)
* Drain – Source Saturation Voltage
R
DS(on)
* Static – Source Resistance
I
DSX
Drain – Source Cut–Off Current
yfs* Forward Transfer Admittance
TEC
MAGNA
Magnatec. Telephone (01455) 554711. Fax (01455) 558843
Prelim. 01/97
BUZ907DP
BUZ908DP
Characteristic Test Conditions Min. Typ. Max. Unit
* Pulse Test: Pulse Width = 300µs , Duty Cycle ≤ 2%.
Characteristic Test Conditions Min. Typ. Max. Unit
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
t
on
Turn–on Time
t
off
Turn-off Time
TBA
TBA
TBA
TBA
TBA
VDS= -10V
f = 1MHz
VDS= -20V
ID= -5A
pF
ns
STATIC CHARACTERISTICS (T
case
= 25°C unless otherwise stated)
D
G
S
DYNAMIC CHARACTERISTICS (T
case
= 25°C unless otherwise stated)
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