Page 1
TEC
MAGNA
Magnatec. Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612.
Prelim. 10/94
BUZ905P
BUZ906P
V
DSX
Drain – Source Voltage
V
GSS
Gate – Source Voltage
I
D
Continuous Drain Current
I
D(PK)
Body Drain Diode
P
D
Total Power Dissipation @ T
case
= 25°C
T
stg
Storage Temperature Range
T
j
Maximum Operating Junction Temperature
R
θJC
Thermal Resistance Junction – Case
±14V
-8A
-8A
125W
–55 to 150°C
150°C
1.0°C/W
MECHANICAL DATA
Dimensions in mm (inches)
1
32
3.55 (0.140)
3.81 (0.150)
0.40 (0.016)
0.79 (0.031)
2.21 (0.087)
2.59 (0.102)
1.01 (0.040)
1.40 (0.055)
15.49 (0.610)
16.26 (0.640)
4.69 (0.185)
5.31 (0.209)
1.49 (0.059)
2.49 (0.098)
20.80 (0.819)
21.46 (0.845)
6.15
(0.242)
BSC
19.81 (0.780)
20.32 (0.800)
4.50
(0.177)
Max.
1.65 (0.065)
2.13 (0.084)
5.25 (0.215)
BSC
2.87 (0.113)
3.12 (0.123)
P–CHANNEL
POWER MOSFET
FEATURES
• HIGH SPEED SWITCHING
• P–CHANNEL POWER MOSFET
• SEMEFAB DESIGNED AND DIFFUSED
• HIGH VOLTAGE (160V & 200V)
• HIGH ENERGY RATING
• ENHANCEMENT MODE
• INTEGRAL PROTECTION DIODE
• N–CHANNEL ALSO AVAILABLE AS
BUZ900P & BUZ901P
Pin 1 – Gate
TO–247
Pin 2 – Source Pin 3 – Drain
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
POWER MOSFETS FOR
AUDIO APPLICATIONS
BUZ905P
-160V
BUZ906P
-200V
Page 2
TEC
MAGNA
Magnatec. Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612.
Prelim. 10/94
BUZ905P
BUZ906P
Characteristic Test Conditions Min. Typ. Max. Unit
BV
DSX
Drain – Source Breakdown Voltage
BV
GSS
Gate – Source Breakdown Voltage
V
GS(OFF)
Gate – Source Cut–Off Voltage
V
DS(SAT)
* Drain – Source Saturation Voltage
I
DSX
Drain – Source Cut–Off Current
yfs* Forward Transfer Admittance
-160
-200
±14
-0.15 -1.5
-12
-10
-10
0.7 2
* Pulse Test: Pulse Width = 300µs , Duty Cycle ≤ 2%.
VGS= 10V BUZ905P
ID= -10mA BUZ906P
VDS= 0 IG= ±100µA
VDS= -10V ID= -100mA
VGD= 0 ID= -8A
VDS= -160V
BUZ905P
VGS= -10V
VDS= -200V
BUZ906P
VDS= -10V ID= -3A
V
V
V
V
mA
S
Characteristic Test Conditions Min. Typ. Max. Unit
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
t
on
Turn–on Time
t
off
Turn-off Time
734
300
26
120
60
VDS= 10V
f = 1MHz
VDS= -20V
ID= -5A
pF
ns
STATIC CHARACTERISTICS (T
case
= 25°C unless otherwise stated)
DYNAMIC CHARACTERISTICS (T
case
= 25°C unless otherwise stated)
0 25 50 75 100 125 150
0
25
50
75
100
125
150
T — CASE TEMPERATURE (˚C)
C
CH AN NEL D ISS IPATION (W )
Derating Chart
Page 3
TEC
MAGNA
Magnatec. Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612.
Prelim. 10/94
BUZ905P
BUZ906P
0
-10 -20 -30 -40 -50 -60 -70 -80 -90
0
-1
-2
-3
-4
-5
-6
-7
-8
-9
P
=
1
2
5
W
C
H
I — DRAIN CU RRENT (A)
D
V — DRAIN – SOURCE VOLTAGE (V)
DS
T = 25˚C
C
-7V
-6V
-5V
-4V
-3V
-2V
0
-10 -20 -30 -40 -50 -60 -70 -80 -90
0
-1
-2
-3
-4
-5
-6
-7
-8
-9
P
=
1
2
5
W
C
H
I — DRAIN CU RRENT (A)
D
V — DRAIN – SOURCE VOLTAGE (V)
DS
-7V
-6V
-5V
-4V
-3V
-2V
T = 75˚C
C
I — D RAIN CU RR EN T (A)
D
V — DRAIN – SOURCE VOLTAGE (V)
DS
T = 25˚C
C
-0.01
-0.1
-1
-10
-1 -10 -100 -1000
BUZ906
160V
200V
D
C
O
P
E
R
A
T
I
O
N
BUZ905
0.1
1
10
100
0
-1 -2 -3 -4 -5 -6 -7 -8
G — TRANSCOND UC TA NC E (S)
FS
I — DRAIN CURRENT (A)
D
T = 75˚C
C
T = 25˚C
C
V = -20V
DS
Typical Output Characteristics Typical Output Characteristics
Forward Bias Safe Operating Area Transconductance
0
-2 -4 -6 -8 -10 -12 -14
0
-2
-4
-6
-8
-10
V — GATE – SOURCE VOLTAGE (V)
GS
V — DRA IN – S OURCE VOLTAGE (V)
DS
T = 25˚C
C
I = -6A
D
I = -3A
D
I = -1A
D
T = 25˚C
C
I — DRAIN C UR RE NT (A)
D
V — GATE – SOURCE VOLTAGE (V)
GS
0
-1 -2 -3 -4 -5 -6 -7 -8
0
-1
-2
-3
-4
-5
-6
-7
-8
-9
T = 75˚C
C
T = 100˚C
C
V = -10V
DS
Drain – Source Voltage
vs
Gate – Source Voltage Typical Transfer Characteristics
Page 4
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