Datasheet BUZ901P, BUZ900P, BCU83 Datasheet (Magnatec)

Prelim 6/99

BCU83

Magnatec. Telephone [phone]. Fax [phone].

E-mail: [e-mail]

Website: http://www.semelab.co.uk

V

CBO

Collector – Base voltage

V

CEO

Collector – Emitter voltage

V

EBO

Emitter – Base voltage

I

C

Collector current

I

C(PK)

Peak Collector current

P

tot

Total Dissipation at T

case

= 25°C

T

stg

Storage Temperature

T

j

Maximum Operating Junction Temperature

60V
20V

6V
5A
8A

0.9W

–55 to 150°C

150°C

MECHANICAL DATA

Dimensions in mm

1 .4 5 P IT C H

5.0

6.0

3.0

14.0

8.5

0.5

TYP

4.7

EC

B

0.5

NPN EPITAXIAL PLANAR

SILICON TRANSISTOR

Ideal for high current driver

applications requiring

efficient low loss devices

FEATURES

•LOW V

CE(SAT)

• HIGH CURRENT

• HIGH ENERGY RATING

APPLICATIONS

• Any High Current Driver Applications
Requiring Efficient Low Loss Devices.

TO92(EXTENDED)

ABSOLUTE MAXIMUM RATINGS (T

case

= 25°C unless otherwise stated)

Prelim 6/99

BCU83

Magnatec. Telephone [phone]. Fax [phone].

E-mail: [e-mail]

Website: http://www.semelab.co.uk

Parameter Test Conditions Min. Typ. Max. Unit.

* Pulse test tp= 300ms ,

d £

2%

VCB= 50V IE= 0
VEB= 5V IC= 0

IC= 3A IB= 60mA

IC= 3A IB= 60mA
VCE= 2V IC= 0.5A

VCE= 2V IC= 3A
VCE= 10V IC= 50mA
VCB= 10V f = 1MHz

1
1

0.5

0.6 1.5

100 560

75

120

45

I

CBO

Collector Cut–Off Current

I

EBO

Emitter Cut–Off Current
Collector – Emitter Saturation
Voltage
Base – Emitter Saturation
Voltage

h

FE*

DC Current Gain

f

T

Transition frequency

C

ob

Output Capacitance

mA
mA

V

V

—

MHz

pF

ELECTRICAL CHARACTERISTICS (T

case

= 25°C unless otherwise stated)

V

CE(sat)*

V

BE(sat)*

Prelim 6/99

BCU83

Magnatec. Telephone [phone]. Fax [phone].

E-mail: [e-mail]

Website: http://www.semelab.co.uk

Prelim 6/99

BCU83

Magnatec. Telephone [phone]. Fax [phone].

E-mail: [e-mail]

Website: http://www.semelab.co.uk