Datasheet BUZ901DP, BUZ900DP Datasheet (Magnatec)

TEC

MAGNA

Magnatec. Telephone [phone]. Telex: 341927. Fax [phone].

Prelim. 2/95

BUZ900DP
BUZ901DP

V

DSX

Drain – Source Voltage

V

GSS

Gate – Source Voltage

I

D

Continuous Drain Current

I

D(PK)

Body Drain Diode

P

D

Total Power Dissipation @ T

case

= 25°C

T

stg

Storage Temperature Range

T

j

Maximum Operating Junction Temperature

R

θJC

Thermal Resistance Junction – Case

±14V

16A
16A

250W

–55 to 150°C

150°C

0.5°C/W

MECHANICAL DATA

Dimensions in mm

123

0.6

2.8

5.020.0

5.45

5.45

1.2

2.0

3.4

2.0

1.0

3.3 Dia.

N–CHANNEL

POWER MOSFET

FEATURES

• HIGH SPEED SWITCHING

• N–CHANNEL POWER MOSFET

• SEMEFAB DESIGNED AND DIFFUSED

• HIGH VOLTAGE (160V & 200V)

• HIGH ENERGY RATING

• ENHANCEMENT MODE

• INTEGRAL PROTECTION DIODE

• P–CHANNEL ALSO AVAILABLE AS
BUZ905DP & BUZ906DP

• DOUBLE DIE PACKAGE FOR MAXIMUM
POWER AND HEATSINK SPACE

TO–3PBL

Pin 1 – Gate Pin 2 – Source Pin 3 – Drain

ABSOLUTE MAXIMUM RATINGS

(T

case

= 25°C unless otherwise stated)

POWER MOSFETS FOR

AUDIO APPLICATIONS

BUZ900DP

160V

BUZ901DP

200V

Case is Source

TEC

MAGNA

Magnatec. Telephone [phone]. Telex: 341927. Fax [phone].

Prelim. 2/95

BUZ900DP
BUZ901DP

Characteristic Test Conditions Min. Typ. Max. Unit

BV

DSX

Drain – Source Breakdown Voltage

BV

GSS

Gate – Source Breakdown Voltage

V

GS(OFF)

Gate – Source Cut–Off Voltage

V

DS(SAT)

* Drain – Source Saturation Voltage

I

DSX

Drain – Source Cut–Off Current

yfs* Forward Transfer Admittance

160
200
±14

0.1 1.5
12

10

10

1.4 4

* Pulse Test: Pulse Width = 300µs , Duty Cycle ≤ 2%.

VGS= –10V BUZ900DP
ID= 10mA BUZ901DP
VDS= 0 IG= ±100µA
VDS= 10V ID= 100mA
VGD= 0 ID= 16A

VDS= 160V
BUZ900DP

VGS= –10V

VDS= 200V
BUZ901DP

VDS= 10V ID= 3A

V
V

V
V

mA

S

Characteristic Test Conditions Min. Typ. Max. Unit

C

iss

Input Capacitance

C

oss

Output Capacitance

C

rss

Reverse Transfer Capacitance

t

on

Turn–on Time

t

off

Turn-off Time

950
550

18

160

80

VDS= 10V
f = 1MHz

VDS= 20V
ID= 7A

pF

ns

STATIC CHARACTERISTICS (T

case

= 25°C unless otherwise stated)

DYNAMIC CHARACTERISTICS (T

case

= 25°C unless otherwise stated)

50

100

150

200

250

300

0

0 25 50 75 100 125 150

T — CASE TEMPERATURE (˚C)

C

CH AN NEL D ISS IPATION (W )

Derating Chart

TEC

MAGNA

Magnatec. Telephone [phone]. Telex: 341927. Fax [phone].

Prelim. 2/95

BUZ900DP
BUZ901DP

1 2 3 4 5 6 7 8 9

0

2

4

6

8

10

12

14

16

V — GATE – SOURCE VOLTAGE (V)

GS

V — DRA IN – S OU RCE VOLTAGE (V)

DS

T = 25˚C

C

I = 9A

D

I = 5A

D

D

I = 3A

I = 14A

D

T = 25˚C

C

T = 75˚C

C

I — DRAIN C UR RE NT (A)

D

V — GATE – SOURCE VOLTAGE (V)

GS

V = 10V

DS

0 1 2 3 4 5 6 7 8 9 10 11

0

2

4

6

8

10

12

14

16

18

20

22

T = 100˚C

C

0 10 20 30 40 50 60 70

0

2

4

6

8

10

12

14

16

18

20

22

P

=

2

5

0

W

C

H

I — DR AIN CURR EN T (A)

D

V — DRAIN – SOURCE VOLTAGE (V)

DS

0 10 20 30 40 50 60 70

0

3V

1V

6V

5V

4V

7V

T = 25˚C

C

2V

Typical Transfer Characteristics

Typical Output Characteristics

22

2

4

6

8

10

12

14

16

18

20

0

P

=

2

5

0

W

C

H

0 10 20 30 40 50 60 70

I — DR AIN CURR EN T (A)

D

V — DRAIN – SOURCE VOLTAGE (V)

DS

T = 75˚C

C

3V

2V

6V

5V

4V

7V

1V

Typical Output Characteristics

Drain – Source Voltage

vs

Gate – Source Voltage

1 10 100 1000

0.1

1

10

100

I — DRAIN CURRENT (A)

D

V — DRAIN – SOURCE VOLTAGE (V)

DS

T = 25˚C

C

160V

200V

BUZ900D

BUZ901D

D

C

O

P

E

R

AT

I

O

N

Forward Bias Safe Operating Area

0 2 6 8 10 12 14

0.1

1

10

100

4 16

G — TRANSCONDUCTANCE (S)

FS

I — DRAIN CURRENT (A)

D

T = 25˚C

C

T = 75˚C

C

V = 20V

DS

Transconductance